Advanced Power P-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Lower On-resistance BVDSS -40V
▼ Simple Drive Requirement RDS(ON) 32mΩ
▼ Fast Switching Characteristic ID-27A
▼ RoHS Compliant
Description
Absolute Maximum Ratings
Symbol Units
VDS V
VGS V
ID@TC=25℃A
ID@TC=100℃A
IDM A
PD@TC=25℃W
TSTG ℃
TJ℃
Symbol Value Units
Rthj-c Maximum Thermal Resistance, Junction-case 3.2 ℃/W
Rthj-a Maximum Thermal Resistance, Junction-ambient 62 ℃/W
Data and specifications subject to change without notice
200904291
1
AP9562GP-HF
Rating
-40
+20
-27
Thermal Data
-55 to 150
39
Parameter
Total Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range -55 to 150
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1-100
Continuous Drain Current, VGS @ 10V -17.5
Halogen-Free Product
Parameter
Drain-Source Voltage
Gate-Source Voltage
G
D
S
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 package is widely preferred for commercial-industrial
power applications and suited for low voltage applications such as
DC/DC converters.
GDSTO-220(P)
AP9562GP-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -40 - - V
RDS(ON) Static Drain-Source On-Resistance2VGS=-10V, ID=-16A - - 32 mΩ
VGS=-4.5V, ID=-12A - - 50 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -1 - -3 V
gfs Forward Transconductance VDS=-10V, ID=-16A - 19 - S
IDSS Drain-Source Leakage Current VDS=-32V, VGS=0V - - -10 uA
IGSS Gate-Source Leakage VGS= +20V, VDS=0V - - +100 nA
QgTotal Gate Charge2ID=-16A - 15 24 nC
Qgs Gate-Source Charge VDS=-32V - 3 - nC
Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 9 - nC
td(on) Turn-on Delay Time2VDS=-20V - 8 - ns
trRise Time ID=-16A - 35 - ns
td(off) Turn-off Delay Time RG=3.3Ω,VGS=-10V - 33 - ns
tfFall Time RD=1.25Ω-73-ns
Ciss Input Capacitance VGS=0V - 1275 2040 pF
Coss Output Capacitance VDS=-25V - 140 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 120 - pF
RgGate Resistance f=1.0MHz - 6 9 Ω
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
VSD Forward On Voltage2IS=-12A, VGS=0V - - -1.2 V
trr Reverse Recovery Time2IS=-16A, VGS=0V, - 27 - ns
Qrr Reverse Recovery Charge dI/dt=-100A/µs - 21 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9562GP-HF
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
3
0
20
40
60
80
100
024681012
-VDS , Drain-to-Source Voltage (V)
-ID , Drain Current (A)
TC=25oC -10V
-7.0 V
-6.0 V
-5.0 V
VG= -4.0 V
0
10
20
30
40
50
60
0246810
-VDS , Drain-to-Source Voltage (V)
-ID , Drain Current (A)
-10V
-7.0V
-6.0V
-5.0V
VG= -4.0 V
TC= 150 oC
28
32
36
40
44
246810
-VGS , Gate-to-Source Voltage (V)
RDS(ON) (m
Ω
)
I
D=-12 A
TC=25
℃
0.6
0.8
1.0
1.2
1.4
1.6
1.8
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized RDS(ON)
I
D= -16A
VG= -10V
0.5
0.7
0.9
1.1
1.3
1.5
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized -VGS(th) (V)
0
4
8
12
16
0 0.4 0.8 1.2 1.6
-VSD , Source-to-Drain Voltage (V)
-IS(A)
Tj=25 oCTj=150 oC
AP9562GP-HF
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform
4
td(on) trtd(off)
tf
VDS
VGS
10%
90%
Q
VG
-4.5V
QGS QGD
QG
Charge
0
2
4
6
8
10
0 10203040
QG , Total Gate Charge (nC)
-VGS , Gate to Source Voltage (V)
VDS = -32V
I
D= -16A
0
400
800
1200
1600
2000
2400
1 5 9 1317212529
-VDS , Drain-to-Source Voltage (V)
C (pF)
f
=1.0MH
z
Ciss
Coss
Crss
0.1
1
10
100
1000
0.1 1 10 100
-VDS , Drain-to-Source Voltage (V)
-ID (A)
TC=25oC
Single Pulse
100us
1ms
10ms
100ms
DC
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
t , Pulse Width (s)
Normalized Th e rmal Re sponse (Rthjc)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
