November 2004
©2004 Fairchild Semiconductor Corporation FDS6680A Rev F1(W)
FDS6680A
Single N-Channel, Logic Level, PowerTrench® MOSFET
General Description
This N-Channel Logic Level MOSFET is produced
using Fairchild Semiconductor’s advanced Power
Trench process that has been especially tailored to
minimize the on-state resistance and yet maintain
superior switching performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
Features
• 12.5 A, 30 V RDS(ON) = 9.5 mΩ @ VGS = 10 V
RDS(ON) = 13 mΩ @ VGS = 4.5 V
• Ultra-low gate charge
• High performance trench technology for extremely
low RDS(ON)
• High power and current handling capability
S
D
S
S
SO-8
D
D
D
G
DDDD
SSSG
Pin 1
SO-8
4
3
2
1
5
6
7
8
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol Parameter Ratings Units
VDSS Drain-Source Voltage 30 V
VGSS Gate-Source Voltage ±20
ID Drain Current – Continuous (Note 1a) 12.5 A
– Pulsed 50
Power Dissipation for Single Operation (Note 1a) 2.5
(Note 1b) 1.2
PD
(Note 1c) 1.0
W
TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W
RθJC Thermal Resistance, Junction-to-Ambient (Note 1) 25
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDS6680A FDS6680A 13’’ 12mm 2500 units
FDS6680A
FDS6680A Rev F1(W)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 µA 30 V
∆BVDSS
∆TJ Breakdown Voltage Temperature
Coefficient ID = 250 µA, Referenced to 25°C 25
mV/°C
IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1 µA
VDS = 24 V, VGS = 0 V, TJ=55°C 10
µA
IGSS Gate–Body Leakage VGS = ±20 V, VDS = 0 V
±100 nA
On Characteristics (Note 2)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 1 2 3 V
∆VGS(th)
∆TJ Gate Threshold Voltage
Temperature Coefficient ID = 250 µA, Referenced to 25°C
–4.9
mV/°C
RDS(on) Static Drain–Source
On–Resistance VGS = 10 V, ID = 12.5 A
VGS = 4.5 V, ID = 10.5 A
VGS = 10 V, ID = 12.5 A, TJ=125°C
7.8
9.9
11.0
9.5
13
15
mΩ
ID(on) On–State Drain Current V GS = 10 V, VDS = 5 V 25 A
gFS Forward Transconductance VDS = 15 V, ID = 12.5 A 64 S
Dynamic Characteristics
Ciss Input Capacitance 1620 pF
Coss Output Capacitance 380 pF
Crss Reverse Transfer Capacitance
VDS = 15 V, V GS = 0 V,
f = 1.0 MHz 160 pF
RG Gate Resistance VGS = 15 mV, f = 1.0 MHz 1.3 Ω
Switching Characteristics (Note 2)
td(on) Turn–On Delay Time 10 19 ns
tr Turn–On Rise Time 5 10 ns
td(off) Turn–Off Delay Time 27 43 ns
tf Turn–Off Fall Time
VDD = 15 V, ID = 1 A,
VGS = 10 V, RGEN = 6 Ω
15 27 ns
Qg Total Gate Charge 16 23 nC
Qgs Gate–Source Charge 5 nC
Qgd Gate–Drain Charge
VDS = 15 V, ID = 12.5 A,
VGS = 5 V
5.8 nC
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current 2.1 A
VSD Drain–Source Diode Forward
Voltage VGS = 0 V, IS = 2.1 A (Note 2) 0.73 1.2 V
trr Diode Reverse Recovery Time IF = 12.5 A, diF/dt = 100 A/µs 28 ns
Qrr Diode Reverse Recovery Charge 18 nC
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 50°C/W when
mounted on a 1in 2
pad of 2 oz copper
b) 105°C/W when
mounted on a .04 in2
pad of 2 oz copper
c) 125°C/W when mounted
on a minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDS6680A
FDS6680A Rev F1(W)
Typical Characteristics
0
10
20
30
40
50
00.511.52
VDS, DRAIN TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
VGS = 10V
4.5V 3.5V
3.0V
6.0V
4.0V
0.8
1
1.2
1.4
1.6
1.8
2
2.2
0 1020304050
ID, DRAIN CURRENT (A)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
VGS = 3.5V
4.5V 5.0V
10V
4.0V
6.0V
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
0.8
1
1.2
1.4
1.6
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
ID = 12.5A
VGS = 10V
0.005
0.01
0.015
0.02
0.025
0.03
246810
VGS, GATE TO SOURCE VOLTAGE (V)
RDS(ON), ON-RESISTANCE (OHM)
ID = 6.2A
TA = 125oC
TA = 25oC
BFigure 3. On-Resistance Variation with
Temperature. Figure 4. On-Resistance Va riation with
Gate-to-Source Voltage.
0
10
20
30
40
50
1.522.533.54
VGS, GATE TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
TA = 125oC-55oC
25oC
VDS = 5V
0.0001
0.001
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1 1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
IS, REVERSE DRAIN CURRENT (A)
VGS = 0V
TA = 125oC
25oC
-55oC
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS6680A
FDS6680A Rev F1(W)
Typical Characteristics
0
2
4
6
8
10
0 5 10 15 20 25 30
Qg, GATE CHARGE (nC)
VGS, GATE-SOURCE VOLTAGE (V)
ID = 12.5A
VDS = 10V 15V
20V
0
600
1200
1800
2400
0 5 10 15 20 25 30
VDS, DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
Coss
Crss
f = 1 MHz
VGS = 0 V
Ciss
Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
100
0.01 0.1 1 10 100
VDS, DRAIN-SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
DC
10s1s
100ms
100
µ
s
RDS(ON) LIMIT
VGS = 10V
SINGLE PULSE
RθJA = 125oC/W
TA = 25oC
10ms1ms
0
10
20
30
40
50
0.001 0.01 0.1 1 10 100
t1, TIME (sec)
P(pk), PEAK TRANSIENT POWER (W)
SINGLE PULSE
RθJA = 125oC/W
TA = 25oC
Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
t1, TIM E (s e c )
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
RθJA(t) = r(t) * RθJA
RθJA = 12 5oC/W
TJ - T A = P * RθJA(t)
Duty Cycle, D = t1 / t2
P
(p
k
)
t1t2
SINGLE P ULS
E
0.01
0.02
0.0
5
0.1
0.2
D = 0.
5
Figure 11. Transient T hermal Response Cur ve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS6680A
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICA TION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS P ATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROV AL OF FAIRCHILD SEMICONDUCTOR CORPORA TION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT ST A TUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
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