FDS6680A Single N-Channel, Logic Level, PowerTrench(R) MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. * 12.5 A, 30 V These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. * High performance trench technology for extremely RDS(ON) = 9.5 m @ VGS = 10 V RDS(ON) = 13 m @ VGS = 4.5 V * Ultra-low gate charge low RDS(ON) * High power and current handling capability D D DD DD DD G SS G S SS S SO-8 Pin 1 SO-8 Absolute Maximum Ratings Symbol VDSS Parameter Gate-Source Voltage ID Drain Current (Note 1a) 3 7 2 8 1 Ratings Units 30 V 12.5 A 50 Power Dissipation for Single Operation (Note 1a) 2.5 (Note 1b) 1.2 (Note 1c) TJ, TSTG 6 20 - Continuous - Pulsed PD 4 TA=25oC unless otherwise noted Drain-Source Voltage VGSS 5 Operating and Storage Junction Temperature Range W 1.0 -55 to +150 C C/W Thermal Characteristics RJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 RJC Thermal Resistance, Junction-to-Ambient (Note 1) 25 Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6680A FDS6680A 13'' 12mm 2500 units (c)2004 Fairchild Semiconductor Corporation FDS6680A Rev F1(W) FDS6680A November 2004 Symbol Parameter TA = 25C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS BVDSS TJ IDSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient VGS = 0 V, Zero Gate Voltage Drain Current VDS = 24 V, ID = 250 A 30 ID = 250 A, Referenced to 25C V 25 VGS = 0 V VDS = 24 V, VGS = 0 V, TJ=55C IGSS VGS = 20 V, Gate-Body Leakage On Characteristics VDS = 0 V mV/C 1 A 10 A 100 nA (Note 2) ID = 250 A VDS = VGS, ID = 250 A, Referenced to 25C 1 2 -4.9 3 7.8 9.9 11.0 9.5 13 15 V VGS(th) VGS(th) TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance ID(on) On-State Drain Current VGS = 10 V, VDS = 5 V gFS Forward Transconductance VDS = 15 V, ID = 12.5 A 64 S VDS = 15 V, f = 1.0 MHz V GS = 0 V, 1620 pF 380 pF 160 pF VGS = 10 V, ID = 12.5 A ID = 10.5 A VGS = 4.5 V, VGS = 10 V, ID = 12.5 A, TJ=125C mV/C 25 m A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance RG Gate Resistance Switching Characteristics VGS = 15 mV, f = 1.0 MHz 1.3 VDD = 15 V, VGS = 10 V, ID = 1 A, RGEN = 6 10 19 ns ns (Note 2) td(on) Turn-On Delay Time tr Turn-On Rise Time 5 10 td(off) Turn-Off Delay Time 27 43 ns tf Turn-Off Fall Time 15 27 ns 16 23 Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS = 15 V, VGS = 5 V ID = 12.5 A, nC 5 nC 5.8 nC Drain-Source Diode Characteristics and Maximum Ratings IS trr Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward (Note 2) VGS = 0 V, IS = 2.1 A Voltage Diode Reverse Recovery Time IF = 12.5 A, diF/dt = 100 A/s Qrr Diode Reverse Recovery Charge VSD 0.73 2.1 A 1.2 V 28 ns 18 nC Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 50C/W when mounted on a 1in2 pad of 2 oz copper b) 105C/W when mounted on a .04 in2 pad of 2 oz copper c) 125C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% FDS6680A Rev F1(W) FDS6680A Electrical Characteristics FDS6680A Typical Characteristics 50 2.2 VGS = 10V 6.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) 40 4.0V 4.5V 3.5V 30 20 10 3.0V 0 0.5 1 1.5 VDS, DRAIN TO SOURCE VOLTAGE (V) 1.6 1.4 4.0V 4.5V 1.2 5.0V 6.0V 10V 1 2 0 Figure 1. On-Region Characteristics. 10 20 30 ID, DRAIN CURRENT (A) 40 50 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.6 0.03 ID = 12.5A VGS = 10V ID = 6.2A RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 3.5V 1.8 0.8 0 1.4 1.2 1 0.8 0.025 0.02 TA = 125oC 0.015 0.01 TA = 25oC 0.005 0.6 -50 -25 0 25 50 75 100 TJ, JUNCTION TEMPERATURE (oC) 125 2 150 BFigure 3. On-Resistance Variation with Temperature. 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 50 IS, REVERSE DRAIN CURRENT (A) VDS = 5V ID, DRAIN CURRENT (A) 2 40 30 TA = 125oC o -55 C 20 10 25oC VGS = 0V 10 TA = 125oC 1 25oC 0.1 -55oC 0.01 0.001 0.0001 0 1.5 2 2.5 3 3.5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 4 0 0.2 0.4 0.6 0.8 1 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS6680A Rev F1(W) FDS6680A Typical Characteristics 2400 f = 1 MHz VGS = 0 V ID = 12.5A 8 VDS = 10V CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 10 15V 6 20V 4 1800 Ciss 1200 Coss 600 2 Crss 0 0 0 5 10 15 20 25 30 0 5 Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. 50 RDS(ON) LIMIT P(pk), PEAK TRANSIENT POWER (W) 100s ID, DRAIN CURRENT (A) 30 Figure 8. Capacitance Characteristics. 100 1ms 10ms 10 100ms 1s 10s 1 DC VGS = 10V SINGLE PULSE RJA = 125oC/W 0.1 TA = 25oC 0.01 0.01 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) SINGLE PULSE RJA = 125oC/W 40 TA = 25oC 30 20 10 0 0.001 100 Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 10 15 20 25 VDS, DRAIN TO SOURCE VOLTAGE (V) 0.01 0.1 1 t1, TIME (sec) 10 100 Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RJA(t) = r(t) * RJA 0.2 0.1 o RJA = 125 C/W 0.1 0.05 P(pk) 0.02 0.01 t1 t2 0.01 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDS6680A Rev F1(W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I13