© 2002 IXYS All rights reserved DS 98959 (10/02)
High Voltage IGBT
Features
•International standard package
•Low VCE(sat)
- for low on-state conduction losses
•High current handling capability
•MOS Gate turn-on
- drive simplicity
Applications
•Capacitor discharge
•Anode triggering of thyristors
•DC choppers
•Switched-mode and resonant-mode
power supplies.
Symbol Test Conditions Maximum Ratings
VCES TJ= 25°C to 150°C 1200 V
VCGR TJ= 25°C to 150°C; RGE = 1 MΩ1200 V
VGES Continuous ±20 V
VGEM Transient ±30 V
IC25 TC= 25°C 5 A
IC90 TC= 90°C 2 A
ICM TC= 25°C, 1 ms 8 A
SSOA VGE = 15 V, TJ = 125°C, RG = 150ΩICM = 6 A
(RBSOA) Clamped inductive load @ 0.8 VCES
PCTC= 25°C 25 W
TJ-55 ... +150 °C
TJM 150 °C
TSTG -55 ... +150 °C
Weight 0.8 g
Max. Lead Temperature for 300 °C
Soldering (1.6mm from case for 10s)
VCES IC90 VCE(SAT)
1200 V 2.0 A 3 V
Preliminary Data Sheet
G = Gate C = Collector
E = Emitter TAB = Collector
TO-252 AA (IXGY)
GE
C (TAB)
IXGY 2N120
Symbol Test Conditions Characteristic Values
(TJ = 25°C unless otherwise specified) Min. Typ. Max.
BVCES IC= 25µA, VGE = 0 V 1200 V
VGE(th) IC= 25µA, VCE = VGE 2.5 5.0 V
ICES VCE = 0.8 VCES TJ= 25°C 10 µA
VGE = 0 V TJ= 125°C 200 µA
IGES VCE = 0 V, VGE = ±20 V ± 50 nA
VCE(sat) IC = IC90, VGE = 15 V 2.5 3.0 V
IC = IC25, VGE = 15 V 3.8 4.5 V
IC = IC25, T = 125oC 4.5 V
IXYS reserves the right to change limits, test conditions, and dimensions.
IXGY 2N120
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
Symbol Test Conditions Characteristic Values
(TJ = 25°C unless otherwise specified) Min. Typ. Max.
Notes: 1. Switching times may increase for VCE (Clamp) > 0.8 VCES,
higher TJ or increased RG.
gfs IC= IC90, VCE = 15 V, 1.5 2.5 S
Pulse test, t < 300 µs, duty cycle < 2 %
Cies VCE = 25 V, VGE = 0 V, f = 1 MHz 110 pF
Coes 12 pF
Cres 2pF
QgIC= Ic90, VGE = 15 V, VCE = 0.5 VCES 9.0 nC
Qge 1.6 nC
Qgc 3.2 nC
td(on) Inductive load, TJ = 25°C 15 ns
tri IC= IC90, VGE = 15 V 25 ns
td(off) RG= 150 Ω300 ns
tfi VCLAMP = 0.8 VCES 360 ns
Eoff Note 1 0.6 mJ
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V
RG = R(off) = 150 Ω
VCLAMP = 0.8 VCES
td(on)
tri
RthJC 4.2 K/W
Note 1
15 ns
30 ns
500 ns
1.2 mJ
TO-252 AA Outline (IXGY)
Dim. Millimeter Inches
Min. Max. Min. Max.
A 2.19 2.38 0.086 0.094
A1 0.89 1.14 0.035 0.045
A2 0 0.13 0 0.005
b 0.64 0.89 0.025 0.035
b1 0.76 1.14 0.030 0.045
b2 5.21 5.46 0.205 0.215
c 0.46 0.58 0.018 0.023
c1 0.46 0.58 0.018 0.023
D 5.97 6.22 0.235 0.245
D1 4.32 5.21 0.170 0.205
E 6.35 6.73 0.250 0.265
E1 4.32 5.21 0.170 0.205
e 2.28 BSC 0.090 BSC
e1 4.57 BSC 0.180 BSC
H 9.40 10.42 0.370 0.410
L 0.51 1.02 0.020 0.040
L1 0.64 1.02 0.025 0.040
L2 0.89 1.27 0.035 0.050
L3 2.54 2.92 0.100 0.115
1 Anode
2 NC
3 Anode
4 Cathode
Eoff
t
d(off)i
tfi
500 µs
© 2002 IXYS All rights reserved
IXGY 2N120
VCE - Volts
0246810
IC - Amperes
0
1
2
3
4
5
TJ = 25OC
7V
VGE = 15V
13V
11V
VGE = 15V
TJ - Degrees C
-25 0 25 50 75 100 125 150
VCE (SAT) - Normalized
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
IC = 5A
IC = 2A
IC = 1A
VCE - Volts
0 5 10 15
IC - Amperes
0
5
10
15
TJ = 25oC
13V
VGE = 15V
11V
9V
7V
5V
VCE - Volts
0 5 10 15 20 25 30 35 40
Capacitance - pF
1
10
100
VGE - Volts
3456789
IC - Amperes
0
1
2
3
4
5
TJ = 125oC
TJ = 25oC
TJ = -40oC
VCE - Volts
0246810
IC - Amperes
0
1
2
3
4
5
TJ = 125OC
5V
7V
VGE = 15V
13V
11V
9V
Ciss
Coss
Crss
5V
9V
Fig. 1. Saturation Voltage Characteristics @ 25oCFig. 2. Extended Output Characteristics
Fig. 3. Saturation Voltage Characteristics @ 125oCFig. 4. Temperature Dependence of VCE(SAT)
Fig. 5. Admittance Curves Fig. 6. Capacitance Curves
IXYS reserves the right to change limits, test conditions, and dimensions.
IXGY 2N120
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
Fig. 9. Gate Charge
Fig. 11. Transient Thermal Resistance
Fig. 10. Turn-off Safe Operating Area
Fig. 7. Dependence of EOFF on IC.
Fig. 8. Dependence of EOFF on RG.
Pulse Width - milliSeconds
1 10 100 1000
ZthJC (K/W)
1
10
VCE - Volts
0 200 400 600 800 1000 1200
IC - Amperes
0.1
1
10
Qg - nanocoulombs
012345678910
VGE - Volts
0
2
4
6
8
10
12
14
16
RG - Ohms
0 200 400 600 800 1000
E(OFF) - millijoules
0
1
2
3
4
IC - Amperes
123456
E(OFF) - millijoules
0
1
2
3
4
VDS = 500V
ID = 1A
IG = 10m A
TJ = -55 to +125°C
RG = 10Ω
dV/d t < 5V /n s
Single pulse
RG = 10Ω
VG = 15V
TJ = 125°C
6
TJ = 125°C
VG = 15V
IC = 4A
E(OFF)
IC = 2A
IC = 5A E(OFF)
E(OFF)
E(OFF)
2
3
4
