Preliminary Data Sheet High Voltage IGBT IXGY 2N120 Symbol Test Conditions Maximum Ratings VCES TJ = 25C to 150C 1200 V VCGR TJ = 25C to 150C; RGE = 1 M 1200 V VGES Continuous 20 V VGEM Transient 30 V IC25 TC = 25C 5 A IC90 TC = 90C 2 A ICM TC = 25C, 1 ms 8 A SSOA VGE = 15 V, TJ = 125C, RG = 150 ICM = 6 A (RBSOA) Clamped inductive load PC TC = 25C @ 0.8 VCES TJ TSTG W -55 ... +150 C 150 C -55 ... +150 C 0.8 g 300 C Weight Max. Lead Temperature for IC90 VCE(SAT) 1200 V 2.0 A 3 V TO-252 AA (IXGY) G E C (TAB) G = Gate E = Emitter C = Collector TAB = Collector Features 25 TJM VCES Soldering (1.6mm from case for 10s) * International * Low V standard package CE(sat) - for low on-state conduction losses * High current handling capability * MOS Gate turn-on - drive simplicity Applications Symbol Test Conditions (TJ = 25C unless otherwise specified) Characteristic Values Min. Typ. Max. BVCES IC = 25A, VGE = 0 V 1200 VGE(th) IC = 25A, VCE = VGE 2.5 ICES VCE = 0.8 VCES TJ = 25C 10 A VGE = 0 V TJ = 125C 200 A 50 nA V 5.0 V IGES VCE = 0 V, VGE = 20 V VCE(sat) IC = IC90, VGE = 15 V 2.5 3.0 V IC = IC25, VGE = 15 V 3.8 4.5 V IC = IC25, T = 125oC 4.5 (c) 2002 IXYS All rights reserved * Capacitor discharge * Anode triggering of thyristors * DC choppers * Switched-mode and resonant-mode power supplies. V DS 98959 (10/02) IXGY 2N120 Symbol Test Conditions (TJ = 25C unless otherwise specified) gfs IC = IC90, VCE = 15 V, Characteristic Values Min. Typ. Max. 1.5 2.5 TO-252 AA Outline (IXGY) S Pulse test, t < 300 s, duty cycle < 2 % 110 pF Coes Cies 12 pF Cres 2 pF 9.0 nC Qge 1.6 nC Qgc 3.2 nC Qg VCE = 25 V, VGE = 0 V, f = 1 MHz IC = Ic90, VGE = 15 V, VCE = 0.5 VCES 1 Anode 2 NC 3 Anode 4 Cathode Dim. td(on) Inductive load, TJ = 25C 15 ns tri IC = IC90, VGE = 15 V 25 ns td(off) RG = 150 300 ns tfi VCLAMP = 0.8 VCES 360 ns Eoff Note 1 0.6 mJ td(on) Inductive load, TJ = 125C IC = IC90, VGE = 15 V 15 30 ns ns 500 500 s ns 1.2 mJ tri td(off)i tfi Eoff RG = R(off) = 150 VCLAMP = 0.8 VCES Note 1 RthJC 4.2 A A1 A2 b b1 b2 c c1 D D1 E E1 e e1 H L L1 L2 L3 K/W Millimeter Min. Max. Inches Min. Max. 2.19 2.38 0.89 1.14 0 0.13 0.64 0.89 0.76 1.14 5.21 5.46 0.46 0.58 0.46 0.58 5.97 6.22 4.32 5.21 6.35 6.73 4.32 5.21 2.28 BSC 4.57 BSC 9.40 10.42 0.51 1.02 0.64 1.02 0.89 1.27 2.54 2.92 0.086 0.094 0.035 0.045 0 0.005 0.025 0.035 0.030 0.045 0.205 0.215 0.018 0.023 0.018 0.023 0.235 0.245 0.170 0.205 0.250 0.265 0.170 0.205 0.090 BSC 0.180 BSC 0.370 0.410 0.020 0.040 0.025 0.040 0.035 0.050 0.100 0.115 Notes: 1. Switching times may increase for VCE (Clamp) > 0.8 VCES, higher T J or increased RG. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1 IXGY 2N120 Fig. 2. Extended Output Characteristics Fig. 1. Saturation Voltage Characteristics @ 25oC 15 5 TJ = 25OC 3 VGE = 15V 13V VGE = 15V 13V 11V 7V IC - Amperes IC - Amperes 4 TJ = 25oC 9V 2 1 10 11V 9V 5 7V 5V 5V 0 0 0 2 4 6 8 10 0 5 Fig. 3. Saturation Voltage Characteristics @ 125oC Fig. 4. Temperature Dependence of VCE(SAT) 5 2.0 TJ = 125OC VGE = 15V 13V 11V 3 9V 7V 2 1 5V 0 VGE = 15V 1.8 VCE (SAT) - Normalized 4 IC - Amperes 15 VCE - Volts VCE - Volts 0 10 2 4 6 8 1.6 1.4 1.2 IC = 2A 1.0 IC = 1A 0.8 0.6 10 IC = 5A -25 0 25 VCE - Volts 50 75 100 125 150 T J - Degrees C Fig. 5. Admittance Curves Fig. 6. Capacitance Curves 5 Ciss 100 Capacitance - pF IC - Amperes 4 3 2 TJ = 125oC TJ = 25oC 1 Coss 10 Crss TJ = -40oC 0 3 4 5 6 VGE - Volts (c) 2002 IXYS All rights reserved 7 8 9 1 0 5 10 15 20 25 VCE - Volts 30 35 40 IXGY 2N120 Fig. 8. Dependence of EOFF on RG. Fig. 7. Dependence of EOFF on IC. 4 4 TJ = 125C VG = 15V RG = 10 VG = 15V 3 E(OFF) - millijoules E(OFF) - millijoules TJ = 125C E(OFF) 2 1 IC = 4A E(OFF) 2 E(OFF) IC = 2A 1 0 0 1 2 3 4 5 0 6 200 400 600 800 1000 RG - Ohms IC - Amperes Fig. 9. Gate Charge Fig. 10. Turn-off Safe Operating Area 10 16 VDS = 500V 14 6 ID = 1A IG = 10mA IC - Amperes 12 VGE - Volts E(OFF) IC = 5A 3 10 8 6 TJ = -55 to +125C 1 RG = 10 dV/dt < 5V/ns 4 2 0 0.1 0 1 2 3 4 5 6 7 8 9 10 0 200 Qg - nanocoulombs 400 600 800 1000 1200 VCE - Volts Fig. 11. Transient Thermal Resistance ZthJC (K/W) 10 4 3 2 Single pulse 1 1 10 100 1000 Pulse Width - milliSeconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1