TEMPFET® BTS 112 A
1 19.02.04
3
2
1
Features
●N channel
●Enhancement mode
●Temperature sensor with thyristor characteristic
●The drain pin is electricalIy shorted to the tab
Pin 1 2 3
GDS
Type VDS IDRDS(on) Package Ordering Code
BTS 112A 60 V 12 A 0.15 ΩTO-220AB C67078-S5014-A3
Maximum Ratings
Parameter Symbol Values Unit
Drain-source voltage VDS 60 V
Drain-gate voltage, RGS = 20 kΩVDGR 60
Gate-source voltage VGS ± 20
Continuous drain current, TC = 33 °CID12 A
ISO drain current
TC = 85 °C, VGS = 10 V, VDS = 0.5 V
ID-ISO 2.5
Pulsed drain current, TC = 25 °CID puls 48
Short circuit current, Tj = – 55 ... + 150 °CISC 27
Short circuit dissipation, Tj = – 55 ... + 150 °CPSCmax 400 W
Power dissipation Ptot 40
Operating and storage temperature range Tj,Tstg – 55 ... + 150 °C
DIN humidity category, DIN 40 040 – E –
IEC climatic category, DIN IEC 68-1 – 55/150/56
Thermal resistance
Chip-case
Chip-ambient
Rth JC
Rth JA
≤ 3.1
≤ 75
K/W
TEMPFET® BTS 112 A
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Electrical Characteristics
at Tj = 25 ˚C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage
VGS = 0, ID = 0.25 mA
V(BR)DSS 60 ––
V
Gate threshold voltage
VGS = VDS, ID = 1.0 mA
VGS(th) 2.5 3.0 3.5
Zero gate voltage drain current
VGS = 60 V, VDS = 0
Tj = 25 °C
Tj = 150 °C
IDSS
–
–
0.1
10
1.0
100
µA
Gate-source leakage current
VGS = ± 20 V, VDS = 0
Tj = 25 °C
Tj = 150 °C
IGSS
–
–
10
2
100
4
nA
µA
Drain-source on-state resistance
VGS = 10 V, ID = 7.5 A
RDS(on) –0.12 0.15
Ω
Dynamic Characteristics
Forward transconductance
VDS ≥ 2 ×ID×RDS(on)max,ID = 7.5 A
gfs 3.0 5.7 –
S
Input capacitance
VGS = 0, VDS = 25 V, f = 1 MHz
Ciss –360 480
pF
Output capacitance
VGS = 0, VDS = 25 V, f = 1 MHz
Coss –160 250
Reverse transfer capacitance
VGS = 0, VDS = 25 V, f = 1 MHz
Crss –50 90
Turn-on time ton, (ton = td(on) + tr)
VCC = 30 V, VGS = 10 V, ID = 3 A, RGS = 50 Ω
td(on) –15 25 ns
tr–30 45
Turn-off time toff, (toff = td(off) + tf)
VCC = 30 V, VGS = 10 V, ID = 3 A, RGS = 50 Ω
td(off) –40 55
tf–55 75
TEMPFET® BTS 112 A
3 19.02.04
Electrical Characteristics (cont’d)
at Tj = 25 °C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
Reverse Diode
Continuous source current IS––12 A
Pulsed source current ISM ––48
Diode forward on-voltage
IF = 12 A, VGS = 0 V
VSD – 1.3 1.6
V
Reverse recovery time
IF = IS, diF/dt = 100 A/µs, VR = 30 V
t rr –60 –
ns
Reverse recovery charge
IF = IS, diF/dt = 100 A/µs, VR = 30 V
Q rr –0.1 –
µC
Temperature Sensor
Forward voltage
ITS(on) = 10 mA, Tj = – 55 ... + 150 °C
Sensor override, tp≤ 100 µs
Tj = – 55 ... + 160 °C
VTS(on) –
–
1.4
–
1.5
10
V
Forward current
Tj = – 55 ... + 150 °C
Sensor override, tp≤ 100 µs
Tj = – 55 ... + 160 °C
ITS(on) –
–
–
–
10
600
mA
Holding current, VTS(off) = 5.0 V, Tj = 25 °C
Tj = 150 °C
IH0.05
0.05
0.1
0.2
0.5
0.3
Switching temperature
VTS = 5.0 V
TTS(on) 150 ––
°C
Turn-off time
VTS = 5.0 V, ITS(on) = 2 mA
toff 0.5 –2.5
µs
TEMPFET® BTS 112 A
4 19.02.04
Examples for short-circuit protection
at Tj = – 55 ... + 150 °C, unless otherwise specified.
Parameter Symbol Examples Unit
12–
Drain-source voltage VDS 15 30 –V
Gate-source voltage VGS 6.8 5.0 –
Short-circuit current ISC 27 11 –A
Short-circuit dissipation PSC 400 330 –W
Response time
Tj = 25 °C, before short circuit
tSC(off) 20 20 –
ms
Short-circuit protection ISC = f (VDS)
Parameter:V
GS
DiagramtodetermineISC forTj=–55...+150°C
Max. gate voltage VGS(SC) = f (VDS)
Parameter: Tj=– 55 ... + 150 °C
TEMPFET® BTS 112 A
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Max. power dissipation Ptot = f (TC)
Typical output characteristics ID = f (VDS)
Parameter:t
p =80 s
Typ. drain-source on-state resistance
RDS(on) = f (ID)
Parameter:V
GS
Safe operating area ID = f (VDS)
Parameter: D = 0.01, TC=25°C
TEMPFET® BTS 112 A
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Drain-source on-state resistance
RDS(on) = f (Tj)
Parameter: ID= 5 A, VGS = 10 V
Typ. transfer characteristic
ID = f (VGS)
Parameter:t
p = 80 µs, VDS = 25 V
Gate threshold voltage VGS(th) = f (Tj)
Parameter:V
DS = VGS,ID= 1 mA
Typ. transconductance gfs = f (ID)
Parameter: tp = 80 µs, VDS = 25 V
TEMPFET® BTS 112 A
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Continuous drain current ID=f (TC)
Parameter: VGS ≥ –10 V
Typ. gate-source leakage current
IGSS =f (TC)
Parameter: VGS = –20 V, VDS = 0
Forward characteristics of reverse diode
IF = f (VSD)
Parameter:T
j,tp = 80 µs
Typ. capacitances C = f (VDS)
Parameter: VGS = 0, f= 1 MHz
TEMPFET® BTS 112 A
8 19.02.04
Transient thermal impedance ZthJC = f (tp)
Parameter:D = tp/T
TEMPFET® BTS 112 A
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TO 220 AB Ordering Code
Standard C67078-S5014-A3
TO 220 AB Ordering Code
SMD Version E 3045 C67078-S5014-A4
Tape & reel E 3045 A C67078-S5014-A5
3.7
9.5
9.9
4.6
0.75
1.05
2.542.54
17.5
2.8
12.8
0.5
2.4
13.5
9.2
15.6
1.3
4.4
GPT05155
1)
3) max. 14.5 by dip tinning press burr max. 0.05
2) dip tinning
1) punch direction, burr max. 0.04
3)
2) 1
TEMPFET® BTS 112 A
10 19.02.04
Edition 04.97
Published by Infineon Technologies AG,
St.-Martin-Strasse 53,
D-81541 München, Germany
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Infineon Technologies AG 2000.
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