IRF7807D1 - International Rectifier

Parameter Symbol Max. Units

Drain-Source Voltage VDS 30

Gate-Source Voltage VGS ±12

Continuous Drain or Source 25°C ID8.3

Current (VGS ≥ 4.5V) 70°C 6.6 A

Pulsed Drain CurrentIDM 66

Power Dissipation 25°C PD2.5

70°C 1.6

Schottky and Body Diode 25°C IF (AV) 3.5 A

Average ForwardCurrent70°C 2.2

Junction & Storage Temperature Range TJ, TSTG –55 to 150 °C

• Co-Pack N-channel HEXFET Power MOSFET

and Schottky Diode

• Ideal for Synchronous Rectifiers in DC-DC

Conver ters Up to 5A Output

• Low Conduction Losses

• Low Switching Losses

• Low Vf Schottky Rectifier

FETKY™ MOSFET / SCHOTTKY DIODE

Absolute Maximum Ratings

Parameter Max. Units

Maximum Junction-to-AmbientRθJA 50 °C/W

Thermal Resistance

Description

The FETKY™ family of Co-Pack HEXFETMOSFETs and

Schottky diodes offers the designer an inno v ativ e , board

space saving solution for switching regulator and power

management applications. HEXFET power MOSFETs

utilize advanced processing techniques to achieve

extremely lo w on-resistance per silicon area. Combining

this technology with International Rectifier’s low forward

drop Schottky rectifiers results in an extremely efficient

device suitable for use in a wide variety of portable

electronics applications.

The SO-8 has been modified through a customized

leadframe for enhanced thermal characteristics. The SO-

8 package is designed for vapor phase , infr ared or wave

soldering techniques.

Top View

A/S

K/D

IRF7807D1

PD- 93761

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11/8/99

IRF7807D1

VDS 30V

RDS(on) 25mΩ

Qg 14nC

Qsw 5.2nC

Qoss 18.4nC

Device Features (Max Values)

SO-8

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Electrical Characteristics

Schottky Diode & Body Diode Ratings and Characteristics

Repetitive rating; pulse width limited b y max. junction temperature.

Pulse width ≤ 300 µs; duty cycle ≤ 2%.

When mounted on 1 inch square copper board, t < 10 sec.

50% Duty Cycle, Rectangular

* Devices are 100% tested to these parameters .

Parameter Min Typ Max Units Conditions

Diode Forward Voltage VSD 0.5 V Tj = 25°C , Is = 1A, V GS =0V

0.39 Tj = 125°C, Is = 1A, VGS =0V

Reverse Recovery Time trr 51 ns Tj = 25°C , Is = 7.0A, VDS = 16V

Reverse Recover y Charge Qrr 48 nC di/dt = 100A/µs

Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Parameter Min Typ Max Units Conditions

Drain-to-Source V(BR)DSS 30 V VGS = 0V, ID = 250µA

Breakdown Voltage*

Static Drain-Source RDS(on) 17 25 mΩVGS = 4.5V, ID = 7A

on Resistance*

Gate Threshold Voltage* VGS(th) 1.0 V VDS = VGS,ID = 250µA

Drain-Source Leakage IDSS 90 µAV

DS = 24V, VGS = 0V

Current* 7.2 mA VDS = 24V, VGS = 0V,

Tj = 125°C

Gate-Source Leakage IGSS +/- 100 nA VGS = +/-12V

Current*

Total Gate Charge Qgsync 10.5 14 VDS<100mV,

Synch FET* VGS = 5V, ID = 7A

Total Gate Charge Qgcont 12 17 VDS= 16V,

Control FET* VGS = 5V, ID = 7A

Pre-Vth Qgs1 2.1 VDS = 16V, ID = 7A

Gate-Source Charge

Post-Vth Qgs2 0.76 nC

Gate-Source Charge

Gate to Drain Charge Qgd 2.9

Switch Charge* QSW 3.66 5.2

(Qgs2 + Qgd)

Output Charge* Qoss 15.3 18.4 VDS = 16V, VGS = 0

Gate Resistance Rg1.2 Ω

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Fig 3. Typical Reverse Output Characteristics Fig 4. Typical Reverse Output Characteristics

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

0.1 1 10

VDS, Drain-to-Source Voltage (V)

100

ID , Drain-to-Source Current ( A )

2.5V

VGS

TOP 4.5V

3.5V

3.0V

BOTTOM 2.5V

380µs PULSE WIDTH

Tj = 25°C

0.1 1 10

VDS, Drain-to-Source Voltage (V)

100

ID, Drain-to-Source Current (A)

2.5V

VGS

TOP 4.5V

3.5V

3.0V

BOTTOM 2.5V

380µs PULSE WIDTH

Tj = 150°C

00.2 0.4 0.6 0.8 1

VSD, Source-to-Drain Voltage (V)

IS, Source-to-Drain Current (A)

380µs PULSE WIDTH

Tj = 25°C

VGS

TOP 4.5V

3.5V

3.0V

2.5V

2.0V

BOTTOM 0.0V

0.0V

00.2 0.4 0.6 0.8 1

VSD, Source-to-Drain Voltage (V)

IS, Source-to-Drain Current (A)

380µS PULSE WIDTH

Tj = 150°C

VGS

TOP 4.5V

3.5V

3.0V

2.5V

2.0V

BOTTOM 0.0V

0.0V

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Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 8. Typical Transfer Characteristics

1 10 100

400

800

1200

1600

2000

V , Drain-to-Source Voltage (V)

C, Capacitance (pF)

0V,

f = 1MHz

+ C

C SHORTED

iss gs gd , ds

rss gd

oss ds gd

Ciss

Coss

Crss

Fig 7. Normalized On-Resistance

Vs. Temperature

0 2 4 6 8 10 12

QG, Total Gate Charge (nC)

0.0

2.0

4.0

6.0

VGS, Gate-to-Source Voltage (V)

ID= 7.0A

VDS = 16V

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ , Junction Temperature ( °C )

0.5

1.0

1.5

2.0

RDS(on) , Drain-to-Source On Resistance

(Normalized)

ID = 7.0A

VGS = 4.5V

2.5 3.0 3.5

VGS, Gate-to-Source Voltage (V)

100

ID, Drain-to-Source Current (A)

TJ = 25°C

TJ = 150°C

VDS = 10V

380µs PULSE WIDTH

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Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

(HEXFET MOSFET)

0.1

100

0.001 0.01 0.1 1 10 100

Notes:

1. Duty factor D = t / t

2. Peak T =P x Z + T

1 2

JDM thJA A

t , Rectangular Pulse Duration (sec)

Thermal Response (Z )

thJA

0.01

0.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE

(THERMAL RESPONSE)

Fig 9. On-Resistance Vs. Gate Voltage

020 40 60 80

0.016

0.018

0.020

0.022

0.024

R , Drain-to-Source On Resistance

I , Drain Current (A)

DS (on)

VGS = 10V

VGS = 4.5V

Fig 10. On-Resistance Vs. Drain Current

( Ω )

2.0 4.0 6.0 8.0 10.0

VGS, Gate -to -Source Voltage (V)

0.01

0.02

0.03

0.04

0.05

RDS(on), Drain-to -Source On Resistance (Ω)

ID = 7.0A

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MOSFET , Body Diode & Schottky Diode Characteristics

Fig. 13 - Typical Values of

Reverse Current Vs. Reverse Voltage

Fig. 12 - Typical Forward Voltage Drop

Characteristics

0 5 10 15 20 25 30

Reverse Voltage - V

R (V)

0.0001

0.001

0.01

0.1

100

Reverse Current - IR ( mA )

125°C

100°C

Tj = 150°C

75°C

50°C

25°C

0.0 0.2 0.4 0.6 0.8 1.0 1.2

Forward Voltage Drop - V F ( V )

0.1

100

Instantaneous Forward Current - I F ( A )

Tj = 125°C

Tj = 25°C

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SO-8 Part Marking

SO-8 Packag e Details

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330.00

(12.992)

MAX.

14.40 ( .566 )

12.40 ( .488 )

NO TES :

1. CONT ROLLING D IMENSIO N : MILLIMETER.

2. O UTLINE C ON FO RMS TO EIA-481 & EIA-541.

FEED DIRECTION

TERM INAL NU MBER 1

1 2 .3 ( .4 84 )

1 1 .7 ( .4 61 )

8.1 ( .318 )

7.9 ( .312 )

NOTES:

1. CONTRO LLIN G DIM ENSIO N : MILLIM ETER.

2. ALL DIM ENSIONS ARE SHO WN IN M ILLIM ETERS(INCHES).

3. O UTLINE C ON FORM S TO EIA-481 & EIA-541.

SO-8 Tape and Reel

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331

IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020

IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200

IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590

IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111

IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086

IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630

IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936

Data and specifications subject to change without notice. 11/99

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