BFX89
BFY90
SILICON
NPN RF TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BFX89 and BFY90
are silicon NPN RF transistors designed for VHF/UHF
amplifier, oscillator and converter applications.
MARKING: FULL PART NUMBER
TO-72 CASE
MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
SYMBOL UNITS
Collector-Base Voltage VCBO 30 V
Collector-Emitter Voltage VCER 30 V
Collector-Emitter Voltage VCEO 15 V
Emitter-Base Voltage VEBO 2.5 V
Continuous Collector Current IC 25 mA
Peak Collector Current (f>1.0MHz) ICM 50 mA
Power Dissipation PD 200 mW
Power Dissipation (TC=25°C) PD 300 mW
Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C
Thermal Resistance ΘJA 875 °C/W
Thermal Resistance ΘJC 583 °C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
BFX89 BFY90
SYMBOL TEST CONDITIONS MIN TYP MAX MIN TYP MAX UNITS
ICBO V
CB=15V - - 10 - - 10 nA
BVCBO I
C=10μA 30 - - 30 - - V
BVCER I
C=1.0mA, RBE=50Ω 30 - - 30 - - V
BVCEO I
C=1.0mA 15 - - 15 - - V
BVEBO I
E=10μA 2.5 - - 2.5 - - V
hFE V
CE=1.0V, IC=2.0mA 20 - 150 25 - 150
hFE V
CE=1.0V, IC=25mA 20 - 125 20 - 125
fT V
CE=5.0V, IC=2.0mA, f=500MHz - 1.0 - 1.0 1.1 - GHz
fT V
CE=5.0V, IC=25mA, f=500MHz - 1.2 - 1.3 1.4 - GHz
Cob V
CB=10V, IE=0, f=1.0MHz - - 1.7 - - 1.5 pF
Cre V
CE=5.0V, IC=2.0mA, f=1.0MHz - 0.6 - - 0.6 0.8 pF
Gpe V
CE=10V, IC=8.0mA, f=200MHz - 19 22 - - - dB
Gpe V
CE=10V, IC=8.0mA, f=800MHz - - 7.0 - - - dB
Gpe V
CE=10V, IC=14mA, f=200MHz - - - 21 23 - dB
Gpe V
CE=10V, IC=14mA, f=800MHz - - - - 8.0 - dB
R4 (13-March 2014)
www.centralsemi.com
BFX89
BFY90
SILICON
NPN RF TRANSISTORS
LEAD CODE:
1) Emitter
2) Base
3) Collector
4) Case
MARKING:
FULL PART NUMBER
TO-72 CASE - MECHANICAL OUTLINE
ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted)
BFX89 BFY90
SYMBOL TEST CONDITIONS MIN TYP MAX MIN TYP MAX UNITS
NF VCE=5.0V, IC=2.0mA, f=100kHz - - - - - 4.0 dB
NF VCE=5.0V, IC=2.0mA, f=200MHz - 3.3 4.0 - 2.5 3.5 dB
NF VCE=5.0V, IC=2.0mA, f=500MHz, RG=50Ω - - 6.5 - - 5.0 dB
NF VCE=5.0V, IC=2.0mA, f=800MHz - 7.0 - - 5.5 - dB
Po V
CE=10V, IC=8.0mA, f=205MHz - 6.0 - - - - mW
Po V
CE=10V, IC=14mA, f=205MHz - - - 10 12 - mW
www.centralsemi.com
R4 (13-March 2014)
For the latest version of Central Semiconductor’s LIMITATIONS AND DAMAGES DISCLAIMER,
which is part of Central’s Standard Terms and Conditions of sale, visit: www.centralsemi.com/terms
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(001)
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