SIGC11T60NCX1SA2 - INFINEON TECHNOLOGIES AG

SIGC11T60NC

Edited by INFINEON Technologies AI PS DD HV3, L 7302-M, Edition 2, 28.11.2003

IGBT Chip in NPT-technology

This chip is used for:

• IGBT Modules

FEATURES:

• 600V NPT technology

• 100µm chip

• positive temperature coefficient

• easy paralleling

Applications:

• drives

Chip Type VCE ICn Die Size Package Ordering Code

SIGC11T60NC 600V 10A 3.25 x 3.25 mm2 sawn on foil

Q67050-A4158-

A001

MECHANICAL PARAMETER:

Raster size 3.25 x 3.25

Area total / active 10.6 / 7.4

Emitter pad size 2 x 1.6

Gate pad size 1.08 x 0.68

mm2

Thickness 100 µm

Wafer size 150 mm

Flat position 0 deg

Max.possible chips per wafer 1414

Passivation frontside Photoimide

Emitter metallization 3200 nm Al Si 1%

Collector metallization 1400 nm Ni Ag –system

suitable for epoxy and soft solder die bonding

Die bond electrically conductive glue or solder

Wire bond Al, ≤500µm

Reject Ink Dot Size ∅ 0.65mm ; max 1.2mm

Recommended Storage Environment store in original container, in dry nitrogen,

< 6 month at an ambient temperature of 23°C

SIGC11T60NC

Edited by INFINEON Technologies AI PS DD HV3, L 7302-M, Edition 2, 28.11.2003

MAXIMUM RATINGS:

Parameter Symbol Value Unit

Collector-emitter voltage, Tj=25 °C VCE 600 V

DC collector current, limited by Tjmax IC 1 ) A

Pulsed collector current, tp limited by Tjmax Icpuls 30 A

Gate-emitter voltage VGE ±20 V

Operating junction and storage temperature Tj, Tstg -55 ... +150 °C

1 ) depending on thermal properties of assembly

STATIC CHARACTERISTICS (tested on chip), Tj=25 °C, unless otherwise specified:

Value

Parameter Symbol Conditions min. typ. max. Unit

Collector-emitter breakdown voltage V(BR)CES VGE=0V, IC=500µA 600

Collector-emitter saturation voltage VCE(sat) VGE=15V, IC=10A 1.7 2.0 2.5

Gate-emitter threshold voltage VGE(th) IC=350µA, VGE=VCE 4.5 5.5 6.5

Zero gate voltage collector curre nt ICES VCE=600V, VGE=0V 0.8 µA

Gate-emitter leakage current IGES VCE=0V, VGE=20V 120 nA

DYNAMIC CHARACTERISTICS (tested at component):

Value

Parameter Symbol Conditions min. typ. max. Unit

Input capacitance Ciss - 550 -

Output capacitance Coss - 62 -

Reverse transfer capacitance Crss

VCE=25V

VGE=0V

f=1MHz - 42 -

SWITCHING CHARACTERISTICS (tested at component), Inductive Load:

Value

Parameter Symbol Conditions 1) min. typ. max. Unit

Turn-on delay time td(on) - 20 -

Rise time tr - 8 -

Turn-off delay time td(off) - 110 -

Fall time tf

Tj=125°C

VCC=300V

IC=10A

VGE=±15/V

RG=27Ω - 20 -

1) values also influenced by parasitic L- and C- in measurement and package.

SIGC11T60NC

Edited by INFINEON Technologies AI PS DD HV3, L 7302-M, Edition 2, 28.11.2003

CHIP DRAWING:

SIGC11T60NC

Edited by INFINEON Technologies AI PS DD HV3, L 7302-M, Edition 2, 28.11.2003

FURTHER ELECTRICAL CHARACTERISTICS:

This chip data sheet refers to the

device data sheet tbd

Description:

AQL 0,65 for visual inspection according to failure catalog

Electrostatic Discharge Sensitive Device according to MIL-STD 883

Test-Normen Villach/Prüffeld

Published by

Infineon Technologies AG,

Bereich Kommunikation

St.-Martin-Strasse 53,

D-81541 München

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