2SD2568
Transistors
Rev.A 1/2
Power Transistor (400V, 0.5A)
2SD2568
zFeatures
1) High breakdown volt age.(BVCEO=400V)
zAbsolute maximum ratings (Ta=25°C)
Parameter Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
400
400
7
0.5
10
150
−55 to +150
Unit
V
V
V
A
W(Tc=25°C)
°C
°C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
zPackaging specifications and hFE
Type 2SD2568
CPT3
PQ
TL
2500
Package
h
FE
Code
Basic ordering unit (pieces)
zElectrical characteristics (Ta=25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
400
400
7
−
−
−
82
−
−
−
−
−
−
−
−
−
13.5
8
−
−
−
10
10
0.5
270
−
−
V
V
V
µA
µA
V
−
MHz
pF
I
C
=50µA
I
C
=1mA
I
E
=50µA
V
CB
=400V
V
EB
=6V
I
C
=100mA , I
B
=10mA
V
BE(sat)
−−
1.0 V I
C
=100mA , I
B
=10mA
V
CE
/I
C
=5V/50mA
V
CE
=5V , I
E
=−50mA , f=10MHz
V
CB
=10V , I
E
=0A , f=1MHz
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
2SD2568
Transistors
Rev.A 2/2
zElectrical characteristics curves
0.5mA
1.0mA
1.5mA
2.0mA
2.5mA
3.0mA
3.5mA
COLLECTOR CURRENT : IC (mA)
0
02
40
4
80
6
120
160
200
81
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.1 Grounded emitter output
characteristics
0
Ta=25 C
I
B
=0mA
0
0.001
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
BASE TO EMITTER VOLTAGE : V
BE
(V)
Fig.2 Grounded emitter propagation
characteristics
V
CE
=3V
25°C
−25°C
Ta=100°C
COLLECTOR CURRENT : I
C
(A)
0.001 0.002
1
2
5
10
20
50
100
200
500
1000
0.0050.01 0.1 0.2 0.5 10.02 0.05
COLLECTOR CURRENT : I
C
(A)
Fig.3 DC current gain
vs. collector current ( Ι )
DC CURRENT GAIN : h
FE
Ta=25 C
V
CE
=10V
5V
0.001 0.002
1
2
5
10
20
50
100
200
500
1000
0.0050.01 0.1 0.2 0.5 10.02 0.05
COLLECTOR CURRENT : I
C
(A)
Fig.4 DC current gain
vs. collector current ( ΙΙ )
DC CURRENT GAIN : h
FE
V
CE
=10V
25°C
−25°C
Ta=100°C
0.0010.002
0.01
0.02
0.05
0.1
0.2
0.5
1
2
5
10
0.0050.01 0.1 0.2 0.5 10.02 0.05
COLLECTOR CURRENT : I
C
(A)
Fig.5 Collector-emitter saturation voltage
vs. collector current ( Ι )
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
Ta=25 C
IC/IB=20
10
5
0.001 0.002
0.01
0.02
0.05
0.1
0.2
0.5
1
2
5
10
0.005 0.01 0.1 0.2 0.5 10.02 0.05
COLLECTOR CURRENT : I
C
(A)
Fig.6 Collector-emitter saturation voltage
vs. collector current ( ΙΙ )
Base-emitter saturation voltage
vs. collector current
BASE SATURATION VOLTAGE : V
BE(sat)
(V)
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
I
C
/I
B
=10
V
BE(sat)
V
CE(sat)
Ta= −25 C
Ta=100 C
25 C
25 C
100 C
−25 C
−0.001
−0.002 −0.01 −0.05 −0.2
−0.005 −0.02 −0.1
1
2
5
10
20
50
100
200
500
EMITTER CURRENT : I
E
(A)
Fig.7 Gain bandwidth product
vs. emitter current
TRANSITION FREQUENCY : f
T
(MHz) (V)
Ta=25 C
V
CE
=10V
1
2
5
10
20
50
100
200
500
0.1 0.2 0.5 1 2 5 10 20 50
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
Fig.8 Collector output capacitance
vs. collector-base voltage
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
f=1MHz
IE=0A
Ta=25 C
Appendix
Appendix1-Rev1.1
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
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Products listed in this document are no antiradiation design.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
