Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Phase Control SCR
www.pwrx.com 750 Amperes Average
2400 Volts
Revision Date: 04/20/2009
T820
750A
Thermal Characteristics
Maximum Thermal Resistance, Double Sided Cooling Max. Units
Junction-to-Case
Case-to-Sink RΘ(J-C)
RΘ
C-S
0.037
0.020
°C/W
°C/W
Electrical Characteristics, TJ=25° C unless otherwise specified
Characteristics Symbol Test Conditions Min.
Typ. Max.
Units
Repetitive Peak Reverse Leakage Current IRRM T
J=125°C, VR = VRRM 60 mA
Repetitive Peak Forward Leakage Current IDRM T
J=125°C, VD = VDRM 60 mA
Peak On-State Voltage VTM I
FM=1500A peak,
Duty Cycle < 0.1 %
1.65 V
Threshold Voltage, Low-level
Slope Resistance, Low-level
V(TO)1
rT1 TJ = 125°C, I = 15%IT(AV) to
IT(AV) 0.97268
0.4950
V
mΩ
Threshold Voltage, High-level
Slope Resistance, High-level
V(TO)2
rT2 TJ = 125°C, I =
IT(AV) to ITSM 1.2785
0.3365
V
mΩ
VTM Coefficients, Low-level
TJ = 125°C, I = 15%IT(AV) to πIT(AV)
VTM = A+ B Ln(I) +C(I) + D Sqrt(I)
A =
B =
C =
D =
0.50605
0.073285
2.864 E-04
0.007176
VTM Coefficients, High-level
TJ = 125°C, I = πIT(AV) to ITSM
VTM = A+ B Ln(I) +C(I) + D Sqrt(I)
A =
B =
C =
D =
-10.717
2.2006
7.43 E-04
-0.12418
Typical Turn-On Time ton IT = 1000A, VD = 600 V 5 µs
Typical Turn-Off Time tq T
j = 125°C, IT = 250A,
diR/dt = 50A/µs Reapplied
dv/dt = 20 V/µs Linear to 80% VDRM
200
µs
Minimum Critical dv/dt – Exponential to VDRM dv/dt TJ = 125°C 300 V/µs
Gate Trigger Current IGT TJ = 25°C, VD = 12 V 150 mA
Gate Trigger Voltage VGT TJ = 25°C, VD = 12 V 3.0 V
Non-Triggering Gate Voltage VGDM TJ = 125°C, VD = VDRM 0.15 V
Peak Forward Gate Current IGTM 4 A
Peak Reverse Gate Voltage VGRM 5 V