Document Number: 93288 For technical questions, contact: indmodules@vishay.com www.vishay.com
Revision: 18-Nov-09 1
Schottky Rectifier, 240 A
243NQ100R
Vishay High Power Products
FEATURES
175 °C TJ operation
Unique high power, HALF-PAK module
Replaces four parallel DO-5’s
Easier to mount and lower profile than DO-5’s
High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
Low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
Compliant to RoHS directive 2002/95/EC
Designed and qualified for industrial level
DESCRIPTION
The 243NQ100R high current Schottky rectifier module has
been optimized for low reverse leakage at high temperature.
The proprietary barrier technology allows for reliable
operation up to 175 °C junction temperature. Typical
applications are in switching power supplies, converters,
freewheeling diodes, and reverse battery protection.
PRODUCT SUMMARY
IF(AV) 240 A
VR100 V
HALF-PAK (D-67) Reverse
Lug terminal cathode
Base anode
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
IF(AV) Rectangular waveform 240 A
VRRM Range 100 V
IFSM tp = 5 μs sine 25 500 A
VF240 Apk, TJ = 125 °C 0.72 V
TJRange - 55 to 175 °C
VOLTAGE RATINGS
PARAMETER SYMBOL 243NQ100R UNITS
Maximum DC reverse voltage VR100 V
Maximum working peak reverse voltage VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
See fig. 5 IF(AV) 50 % duty cycle at TC = 120 °C, rectangular waveform 240
A
Maximum peak one cycle non-repetitive
surge current
See fig. 7
IFSM
5 μs sine or 3 μs rect. pulse Following any rated load
condition and with rated
VRRM applied
25 500
10 ms sine or 6 ms rect. pulse 3300
Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 1 A, L = 30 mH 15 mJ
Repetitive avalanche current IAR
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical 1A
www.vishay.com For technical questions, contact: indmodules@vishay.com Document Number: 93288
2Revision: 18-Nov-09
243NQ100R
Vishay High Power Products Schottky Rectifier, 240 A
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop
See fig. 1 VFM (1)
240 A TJ = 25 °C 0.86
V
480 A 1.01
240 A TJ = 125 °C 0.72
480 A 0.86
Maximum reverse leakage current
See fig. 2 IRM (1) TJ = 25 °C VR = Rated VR
6mA
TJ = 125 °C 80
Maximum junction capacitance CTVR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C 5500 pF
Typical series inductance LSFrom top of terminal hole to mounting plane 5.0 nH
Maximum voltage rate of change dV/dt Rated VR10 000 V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and
storage temperature range TJ, TStg - 55 to 175 °C
Maximum thermal resistance,
junction to case RthJC DC operation
See fig. 4 0.20
°C/W
Typical thermal resistance,
case to heatsink RthCS Mounting surface, smooth and greased 0.15
Approximate weight 25.6 g
0.9 oz.
Mounting torque minimum
Non-lubricated threads
40 (35)
kgf · cm
(lbf · in)
maximum 58 (50)
Terminal torque minimum 58 (50)
maximum 86 (75)
Case style D-67 HALF-PAK Reverse
Document Number: 93288 For technical questions, contact: indmodules@vishay.com www.vishay.com
Revision: 18-Nov-09 3
243NQ100R
Schottky Rectifier, 240 A Vishay High Power Products
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
1
10
100
1000
0.1.2.3.4.5.6.7.8.911.1
FM
F
Instantaneous Forward Current - I (A)
Forward Vol tage Drop - V (V)
T = 17C
T = 12C
T = 25°C
J
J
J
.001
.01
.1
1
10
100
1000
020406080100
R
R
T = 175°C
150°C
125°C
100°C
75°C
50°C
25°C
J
Reverse Voltage - V (V)
Rever se Current - I (mA)
1000
10000
0 102030405060708090100110
T = 25°C
J
Rever se Vol t age - V ( V)
R
T
Junction Capacitance - C (pF)
.001
.01
.1
1
.00001 .0001 .001 .01 .1 1 10 100
D = 0. 33
D = 0.50
D = 0. 25
D = 0. 17
D = 0. 08
1
thJC
t , Rectangular Pulse Duration (Seconds)
Thermal Impedance - Z (°C/W)
Single Pulse
(Thermal Resistance)
2
t
1
t
P
DM
Not es :
1. Duty factor D = t / t
2. Peak T = P x Z + T
1
JDMthJC C
2
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4Revision: 18-Nov-09
243NQ100R
Vishay High Power Products Schottky Rectifier, 240 A
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
Fig. 7 - Maximum Non-Repetitive Surge Current
Fig. 8 - Unclamped Inductive Test Circuit
120
130
140
150
160
170
180
0 50 100 150 200 250 300 350
DC
Al l owabl e Case Temperature - (°C)
Average Forward Current - I (A)
F( AV)
243NQ
R (DC) = 0.20°C/W
thJC
0
50
100
150
200
250
0 50 100 150 200 250 300 350
DC
Average Power Loss - (Watts)
F(AV)
D = 0. 08
D = 0. 17
D = 0. 25
D = 0. 33
D = 0. 50
RMS Li mit
Average Forward Current - I (A
)
1000
10000
100000
10 100 1000 10000
FSM
p
Non-Repetitive Surge Current - I (A)
At Any Rated Load Condition
And With Rated V Applied
Following Surge
RRM
Square Wave Pulse Duration - t (microsec)
Current
monitor
High-speed
switch
D.U.T.
Rg = 25 Ω
+
Freewheel
diode Vd = 25 V
L
IRFP460
40HFL40S02
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95378
Document Number: 95378 For technical questions, contact: indmodules@vishay.com www.vishay.com
Revision: 12-Nov-09 1
D-67 HALF-PAK Reverse
Outline Dimensions
Vishay Semiconductors
DIMENSIONS in millimeters (inches)
30.40 (1.197)
29.90 (1.177)
Ø 12.83 (0.505)
Ø 12.57 (0.495)
19.18 (0.755)
18.92 (0.745)
2.54 (0.100)
2.29 (0.090)
19.69 (0.775)
18.42 (0.725)
15.11 (0.595)
14.61 (0.575)
1/4-20 UNC-2B
4.11 (0.162)
3.86 (0.152)
39.62 (1.560)
38.61 (1.520)
13.97 (0.550)
13.72 (0.540)
Ø 4.11 (0.162)
Ø 3.86 (0.152)
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 12-Mar-12 1Document Number: 91000
Disclaimer
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