STTH120L06TV Turbo 2 ultrafast high voltage rectifier Features and benefits Ultrafast switching Low reverse current Low thermal resistance Reduces switching and conduction losses A1 K1 A2 K2 A2 K2 Description A1 The STTH120L06TV, which is using ST Turbo 2 600 V technology, is specially suited for use in switching power supplies, and industrial applications, as rectification and free-wheeling diode. K1 ISOTOP STTH120L06TV1 Table 1. Device summary Symbol Value IF(AV) 2 x 60 A VRRM 600 V Tj 150 C VF (typ) 0.95 V trr (max) 70 ns TM: ISOTOP is a trademark of STMicroelectronics April 2011 Doc ID 10766 Rev 2 1/8 www.st.com 8 Characteristics 1 STTH120L06TV Characteristics Table 2. Absolute ratings (limiting values, per diode) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 600 V IF(RMS) RMS forward current 120 A IF(AV) Average forward current, = 0.5 Tc = 65 C Per diode 60 A IFSM Surge non repetitive forward current tp = 10 ms Sinusoidal 500 A Tstg Storage temperature range -55 to + 150 C 150 C Maximum Unit Tj Table 3. Maximum operating junction temperature Thermal parameter Symbol Parameter Rth(j-c) Junction to case Rth(c) Coupling Per diode 0.98 Total 0.54 C/W 0.1 When the diodes 1 and 2 are used simultaneously: Tj (diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c) Table 4. Symbol Static electrical characteristics (per diode) Parameter Test conditions IR(1) Reverse leakage current VF(2) Forward voltage drop Tj = 25 C Tj = 125 C Tj = 25 C Tj = 150 C Min. Typ A 50 IF = 60 A 500 1.55 V 0.95 2. Pulse test: tp = 380 s, < 2 % To evaluate the maximum conduction losses use the following equation: P = 0.93 x IF(AV) + 0.0045 IF2(RMS) Doc ID 10766 Rev 2 Unit 50 VR = VRRM 1. Pulse test: tp = 5 ms, < 2 % 2/8 Max. 1.20 STTH120L06TV Table 5. Characteristics Dynamic characteristics (per diode) Symbol trr Test conditions Parameter Reverse recovery time IRM tfr VFP Tj = 25 C Min. Max. IF = 0.5 A, Irr = 0.25 A, IR = 1 A Unit 70 ns IF = 1 A, dIF/dt = 50 A/s, VR = 30 V 75 105 14 19 A 500 ns Reverse recovery current Tj = 125 C IF = 60 A, dIF/dt = 400 A/s, dIF/dt = 100 A/s Forward recovery time Tj = 25 C IF = 60 A, dIF/dt = 200 A/s VFR = 1.1 x VFmax Forward recovery voltage Tj = 25 C IF = 60 A, dIF/dt = 200 A/s VFR = 1.1 x VFmax Figure 1. Typ. Conduction losses versus average Figure 2. forward current (per diode) 3 V Forward voltage drop versus forward current (per diode) IFM(A) P(W) 200 140 = 0.5 120 180 = 0.2 160 = 0.1 100 =1 = 0.05 Tj=150C (maximum values) 140 120 80 Tj=150C (typical values) 100 60 Tj=25C (maximum values) 80 40 60 T 40 20 =tp/T IF(AV)(A) 20 tp 0 VFM(V) 0 0 10 Figure 3. 20 30 40 50 60 70 80 90 100 0.0 0.2 Relative variation of thermal Figure 4. impedance junction to case versus pulse duration 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 Peak reverse recovery current versus dIF/dt (typical values, per diode) IRM(A) Zth(j-c)/Rth(j-c) 60 1.0 VR=400V Tj=125C 0.9 50 0.8 IF=2 x IF(AV) IF=IF(AV) 0.7 40 IF=0.5 x IF(AV) 0.6 30 0.5 0.4 20 0.3 T 0.2 0.1 10 tp(s) Single pulse =tp/T dIF/dt(A/s) tp 0 0.0 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 0 50 Doc ID 10766 Rev 2 100 150 200 250 300 350 400 450 500 3/8 Characteristics Figure 5. STTH120L06TV Reverse recovery time versus dIF/dt Figure 6. (typical values, per diode) trr(ns) Reverse recovery charges versus dIF/dt (typical values, per diode) Qrr(C) 1200 4.5 VR=400V Tj=125C VR=400V Tj=125C 4.0 1000 IF=2 x IF(AV) 3.5 800 3.0 IF=2 x IF(AV) IF=IF(AV) 2.5 600 IF=IF(AV) 2.0 IF=0.5 x IF(AV) 400 IF=0.5 x IF(AV) 1.5 1.0 200 0.5 dIF/dt(A/s) 0 dIF/dt(A/s) 0.0 0 50 Figure 7. 100 150 200 250 300 350 400 450 500 Reverse recovery softness factor versus dIF/dt (typical values, per diode) S factor 0 Figure 8. 100 200 300 400 500 Relative variations of dynamic parameters versus junction temperature 1.4 1.6 IF< 2 x IF(AV) VR=400V Tj=125C 1.4 S factor 1.2 1.2 1.0 1.0 0.8 QRR 0.8 0.6 IF=IF(AV) VR=400V Reference: Tj=125C trr 0.6 IRM 0.4 0.4 0.2 0.2 Tj(C) dIF/dt(A/s) 0.0 0 50 Figure 9. 100 150 200 250 300 0.0 350 400 450 500 Transient peak forward voltage versus dIF/dt (typical values, per diode) 25 50 100 125 Figure 10. Forward recovery time versus dIF/dt (typical values, per diode) tfr(ns) VFP(V) 400 8 IF=IF(AV) Tj=125C 7 IF=IF(AV) VFR=1.1 x VF max. Tj=125C 350 6 300 5 250 4 200 3 150 2 100 1 50 dIF/dt(A/s) dIF/dt(A/s) 0 0 0 4/8 75 50 100 150 200 250 300 350 400 450 500 0 Doc ID 10766 Rev 2 100 200 300 400 500 STTH120L06TV Characteristics Figure 11. Junction capacitance versus reverse voltage applied (typical values, per diode) C(pF) 1000 F=1MHz VOSC=30mVRMS Tj=25C 100 VR(V) 10 1 10 100 Doc ID 10766 Rev 2 1000 5/8 Package information 2 STTH120L06TV Package information Epoxy meets UL94, V0 Cooling method: by conduction (C) Recommended torque value: 1.3 N*m Maximum torque value: 1.5 N*m In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK(R) is an ST trademark. Table 6. ISOTOP dimensions Dimensions Ref. E Max. Min. Max. A 11.80 12.20 0.465 0.480 A1 8.90 9.10 0.350 0.358 B 7.8 8.20 0.307 0.323 E2 C 0.75 0.85 0.030 0.033 F C2 1.95 2.05 0.077 0.081 D 37.80 38.20 1.488 1.504 D1 31.50 31.70 1.240 1.248 E 25.15 25.50 0.990 1.004 E1 23.85 24.15 0.939 0.951 C A1 C2 F1 P1 D Inches Min. G2 A Millimeters G S D1 E2 24.80 typ. 0.976 typ. G 14.90 15.10 0.587 0.594 G1 12.60 12.80 0.496 0.504 G2 3.50 4.30 0.138 0.169 F 4.10 4.30 0.161 0.169 G1 F1 4.60 5.00 0.181 0.197 E1 P 4.00 4.30 0.157 0.69 P1 4.00 4.40 0.157 0.173 S 30.10 30.30 1.185 1.193 B OP 6/8 Doc ID 10766 Rev 2 STTH120L06TV 3 Ordering information Ordering information Table 7. 4 Ordering information Order code Marking Package Weight Base qty Delivery mode STTH120L06TV1 STTH120L06TV1 ISOTOP 27 g (without screws) 10 (with screws) Tube Revision history Table 8. Document revision history Date Revision Changes 07-Sep-2004 1 First issue. 04-Apr-2011 2 Updated Chapter 2: Package information. 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