NOTES : 1.Thermal Resistance Junction to Lead.
2.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
V
RMS
V
DC
V
RRM
I
(AV)
I
FSM
V
F
1N5820 thru 1N5822
FEATURES
Metal-Semiconductor junction with guard ring
Epitaxial construction
Low forward voltage drop
High current capability
The plastic material carries UL recognition 94V-0
For use in low voltage,high frequency inverters,free
wheeling,and polarity protection applications
MECHANICAL DATA
Case : JEDEC DO-201AD molded plastic
Polarity : Color band denotes cathode
Weight : 0.04 ounces, 1.1 grams
Mounting position : Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.℃
Maximum Average Forward Rectified Current
.375",(9.5mm) Lead Lengths
@TL
=
95 C
Peak Forward Surge Current
8.3ms single half sine-wave
super imposed on rated load
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum forward Voltage at 3.0A DC
3.0
80
0.475
T
J
Operating Temperature Range
-55 to +125
C
T
STG
Storage Temperature Range
-55 to +150
C
Typical Thermal Resistance (Note 1)
R
0JL
10
C/W
I
R
@T
J
=100 C
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@T
J
=25 C 0.15
20
mA
mA
V
A
A
V
UNIT
V
V
CHARACTERISTICS SYMBOL
30
21
30
1N5820
20
14
20
40
28
40
C
J
Typical Junction
Capacitance (Note 2)
250
pF
Maximum forward Voltage at 9.4A DC
V
F
0.525
0.950
0.500
0.9000.850
V
SCHOTTKY BARRIER RECTIFIERS REVERSE VOLTAGE - 20 to 40 Volts
FORWARD CURRENT - 3.0 Amperes
All Dimensions in millimeter
Max.
Min.
DO-201AD
Dim.
A
D
C
B
25.4
9.50
-
7.30
1.20
4.80 5.30
1.30
DO-201AD
A
C
D
A
B
1N5821
1N5822
SEMICONDUCTOR
LITE-ON
REV. 5, Aug-2011, KDHF01