SiSH129DN www.vishay.com Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES PowerPAK(R) 1212-8SH * TrenchFET(R) power MOSFET D D 8 D 7 D 6 5 * Low thermal resistance PowerPAK(R) package with small size * 100 % Rg and UIS tested 0.9 mm 3.3 mm 1 3.3 1 2 S 3 S 4 S G mm Top View Bottom View * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS S * Load switch * Adapter switch PRODUCT SUMMARY VDS (V) -30 RDS(on) max. () at VGS = -10 V 0.0114 RDS(on) max. () at VGS = -4.5 V 0.0200 Qg typ. (nC) ID (A) e, f Configuration G * Notebook PC 24.6 D -35 P-Channel MOSFET Single ORDERING INFORMATION Package PowerPAK 1212-8 Lead (Pb)-free and halogen-free SiSH129DN-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-source voltage VDS -30 Gate-source voltage VGS 20 Continuous drain current (TJ = 150 C) TA = 25 C ID Continuous source-drain diode current Avalanche current Single pulse avalanche energy IDM TC = 25 C TA = 25 C L = 0.1 mH IS TC = 70 C TA = 25 C Soldering recommendations (peak temperature) c, d -60 A -35 e -3.2 a, b IAS -25 31.25 mJ 52.1 PD 3.3 3.8 a, b W 2.4 a, b TA = 70 C Operating junction and storage temperature range -14.4 a, b EAS TC = 25 C Maximum power dissipation -35 e -11.5 a, b TA = 70 C Pulsed drain current V -35 e TC = 25 C TC = 70 C UNIT TJ, Tstg -50 to +150 260 C Notes a. Surface mounted on 1" x 1" FR4 board b. t = 10 s c. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8SH is a leadless package within the PowerPAK 1212-8 package family. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components e. Package limited f. Based on TC = 25 C S18-0696-Rev.B, 09-Jul-2018 Document Number: 75903 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiSH129DN www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM Maximum junction-to-ambient a, b t 10 s RthJA 26 33 Maximum junction-to-case (drain) Steady state RthJC 1.9 2.4 UNIT C/W Notes a. Surface mounted on 1" x 1" FR4 board b. Maximum under steady state conditions is 81 C/W SPECIFICATIONS (TJ = 25 C, unless otherwise noted) PARAMETER Static Drain-source breakdown voltage VDS temperature coefficient VGS(th) temperature coefficient Gate-source threshold voltage Gate-source leakage SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VDS/TJ VGS(th)/TJ VGS(th) IGSS VGS = 0 V, ID = -250 A -30 -1.5 -20 - -20 5 0.0095 0.0160 37 -2.8 100 -1 -10 0.0114 0.0200 - V 0.4 - 2230 385 322 47.5 24.6 7.7 12 1.8 50 43 30 14 14 9 36 10 3345 578 71 37 3.6 75 65 45 21 21 18 54 20 - -0.8 31 30 15 16 -35 e -60 -1.2 47 45 - Zero gate voltage drain current On-state drain current a Drain-source on-state resistance a Forward transconductance a Dynamic b Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Gate resistance Turn-on delay time Rise time Turn-off delay time Fall time Turn-on delay time Rise time Turn-off delay time Fall time Drain-Source Body Diode Characteristics Continuous source-drain diode current Pulse diode forward current a Body diode voltage Body diode reverse recovery time Body diode reverse recovery charge Reverse recovery fall time Reverse recovery rise time IDSS ID(on) RDS(on) gfs Ciss Coss Crss Qg ID = -250 A VDS = VGS, ID = -250 A VDS = 0 V, VGS = 20 V VDS = -30 V, VGS = 0 V VDS = -30 V, VGS = 0 V, TJ = 55 C VDS -5 V, VGS = -10 V VGS = -10 V, ID = -14.4 A VGS = -4.5 V, ID = -11.5 A VDS = -15 V, ID = -14.4 A VDS = -15 V, VGS = 0 V, f = 1 MHz VDS = -15 V, VGS = -10 V, ID = -14.4 A Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tf VDS = -15 V, VGS = -4.5 V, ID = -14.4 A IS ISM VSD trr Qrr ta tb TC = 25 C f = 1 MHz VDD = -15 V, RL = 1.5 ID -10 A, VGEN = -4.5 V, Rg = 1 VDD = -15 V, RL = 1.5 ID -10 A, VGEN = -10 V, Rg = 1 IF = -10 A IF = -10 A, di/dt = 100 A/s, TJ = 25 C mV/C V nA A A S pF nC ns A V ns nC ns Notes a. Pulse test: pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S18-0696-Rev.B, 09-Jul-2018 Document Number: 75903 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiSH129DN www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) 60 1.2 VGS = 10 V thru 5 V 0.9 ID - Drain Current (A) ID - Drain Current (A) 45 4V 30 125 C 0.6 25 C 0.3 15 -55 C 0.0 0 3 6 9 12 15 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.030 3600 0.025 3000 VGS = 4.5 V C - Capacitance (pF) RDS - On-Resistance (m) 0 0.020 0.015 VGS = 10 V 0.010 Ciss 2400 1800 1200 0.005 600 0.000 0 Coss Crss 0 10 20 30 40 50 60 0 12 18 24 ID - Drain Current (A) VDS - Drain-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 10 30 1.8 RDS(on) - On-Resistance (normalized) VGS - Gate-to-Source Voltage (V) 6 8 VDS = 15 V, ID = 14.4 A 6 4 VDS = 24 V, ID = 14.4 A 2 0 0 10 20 30 Qg - Total Gate Charge (nC) Gate Charge S18-0696-Rev.B, 09-Jul-2018 40 50 ID = 14.4 A 1.5 VGS = 10 V 1.2 VGS = 4.5 V 0.9 0.6 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (C) On-Resistance vs. Junction Temperature Document Number: 75903 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiSH129DN www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) 0.04 RDS(on) - Drain-to-Source On-Resistance () IS - Source Current (A) 100 TJ = 150 C 10 TJ = 25 C 1 0.1 0.0 0.03 0.02 TJ = 125 C 0.01 TJ = 25 C 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage 6 8 10 12 14 16 VGS - Gate-to-Source Voltage (V) 18 20 On-Resistance vs. Gate-to-Source Voltage 50 2.4 ID = 250 A 2.2 40 Power (W) VGS(th) (V) 2.0 1.8 30 20 1.6 10 1.4 1.2 -50 -25 0 25 50 75 100 125 150 0 0.01 0.1 1.0 10 100 1000 TJ - Temperature (C) Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 Limited by RDS(on) (1) 100 s ID - Drain Current (A) 10 1 ms 10 ms 1 100 ms 1s 10 s 0.1 TA = 25 C Single pulse 0.01 0.1 (1) DC BVDSS limited 1 10 100 VDS - Drain-to-Source Voltage (V) VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient S18-0696-Rev.B, 09-Jul-2018 Document Number: 75903 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiSH129DN www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) 60 ID - Drain Current (A) 50 40 30 20 10 0 0 25 50 75 100 125 150 TC - CaseTemperature (C) Current Derating a 2 75 1.5 Power (W) Power (W) 60 45 30 1 0.5 15 0 0 0 25 50 75 100 TC - Case Temperature (C) Power, Junction-to-Case 125 150 0 25 50 75 100 125 150 TA - Ambient Temperature (C) Power, Junction-to-Ambient Note a. The power dissipation PD is based on TJ max. = 150 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S18-0696-Rev.B, 09-Jul-2018 Document Number: 75903 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiSH129DN www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 t2 1. Duty cycle, D = t1 t2 2. Per unit base = RthJA = 50 C/W 0.02 3. TJM - TA = PDMZthJA(t) Single pulse 0.01 10 -4 10 -3 10 -2 4. Surface mounted 10 -1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single pulse 0.01 10 -4 10 -3 10 -2 Square Wave Pulse Duration (s) 10 -1 1 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?75903. S18-0696-Rev.B, 09-Jul-2018 Document Number: 75903 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAK(R) 1212-SWLH 0.10 C Z D 8 7 6 5 1 2 3 4 D1 5 6 7 8 2 1 L K E E1 K1 2x 0.10 C 2x e b 4 3 Backside view 0.10 C A C A1 A3 0.08 C DIM. MILLIMETERS INCHES MIN. NOM. MAX. MIN. NOM. MAX. A 0.82 0.90 0.98 0.032 0.035 0.038 A1 0 - 0.05 0 - 0.002 A3 0.20 ref. 0.008 ref. b 0.30 BSC 0.012 BSC D 3.30 BSC 0.130 BSC D1 2.15 E E1 2.25 2.35 0.084 3.30 BSC 1.60 e 1.70 0.088 0.092 0.130 BSC 1.80 0.063 0.067 0.65 BSC 0.026 BSC 0.030 typ. K 0.76 typ. K1 0.41 typ. 0.016 typ. L 0.43 BSC 0.017 BSC Z 0.525 typ. 0.021 typ. 0.071 ECN: C18-0001-Rev. A, 15-Jan-18 DWG: 6062 Revision: 15-Jan-18 Document Number: 76384 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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