MIXERS - DOUBLE-BALANCED - CHIP
4
4 - 28
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
GaAs MMIC DOUBLE-BALANCED
MIXER, 5 - 20 GHz
v05.1007
General Description
Features
Functional Diagram
Input IP3: +25 dBm
LO / RF Isolation: 30 dB
IF Bandwidth: DC to 3 GHz
Small Size: 2.10 x 1.45 x 0.1 mm
Electrical Speci cations, TA = +25° C, LO Drive = +20 dBm
Typical Applications
The HMC143 & HMC144 is ideal for:
• Microwave Point-to-Point Radios
• VSAT
The HMC143 chip is a minature double-balanced
mixer which can be used as an upconverter or down-
converter. The chip utilizes a standard 1μm GaAs
MESFET process. The HMC144 is identical to the
HMC143 except that the layout is a mirror image
designed to ease integration into image-reject
mixer modules. Broadband operation and excellent
isolations are provided by on-chip baluns, which
require no external components and no DC bias. The
design is similar to the HMC141/142 mixers but with an
IF combiner in a double-balanced design, providing
improved RF/IF isolation. These devices are much
smaller and more reliable replacements to hybrid
diode mixers.
HMC143 / HMC144
Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units
Frequency Range, RF & LO 5 - 10.5 10.5 - 15.5 15.5 - 20 GHz
Frequency Range, IF DC - 3 DC - 3 DC - 3 GHz
Conversion Loss 10 12 10 12 10 12 dB
Noise Figure (SSB) 10 12 10 12 10 12 dB
LO to RF Isolation 26 30 24 28 26 30 dB
LO to IF Isolation 15 18 12 15 14 17 dB
IP3 (Input) 21 25 23 dBm
IP2 (Input) 50 50 50 dBm
1 dB Gain Compression (Input) 10 15 10 15 10 15 dBm
MIXERS - DOUBLE-BALANCED - CHIP
4
4 - 29
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Conversion Gain vs.
Temperature @ LO = +20 dBm Isolation @ LO = +20 dBm
-20
-15
-10
-5
0
4 6 8 10121416182022
+25 C
+85 C
-55 C
CONVERSION GAIN (dB)
FREQUENCY (GHz)
Upconverter Performance
Conversion Gain @ LO = +20 dBm
Conversion Gain vs. LO Drive Return Loss @ LO = +20 dBm
IF Bandwidth @ LO = +20 dBm
-50
-40
-30
-20
-10
0
4 6 8 10121416182022
RF to IF
LO to RF
LO to IF
ISOLATION (dB)
FREQUENCY (GHz)
-20
-15
-10
-5
0
4 6 8 10121416182022
LO = +13 dBm
LO = +15 dBm
LO = +17 dBm
LO = +20 dBm
CONVERSION GAIN (dB)
FREQUENCY (GHz)
-25
-20
-15
-10
-5
0
4 6 8 10121416182022
RF
LO
RETURN LOSS (dB)
FREQUENCY (GHz)
-30
-25
-20
-15
-10
-5
0
0123456
IF CONVERSION GAIN
IF RETURN LOSS
RESPONSE (dB)
FREQUENCY (GHz)
-20
-15
-10
-5
0
4 6 8 10121416182022
CONVERSION GAIN (dB)
FREQUENCY (GHz)
HMC143 / HMC144
v05.1007 GaAs MMIC DOUBLE-BALANCED
MIXER, 5 - 20 GHz
MIXERS - DOUBLE-BALANCED - CHIP
4
4 - 30
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Input IP3 vs.
Temperature @ LO = +20 dBm
Input IP3 vs. LO Drive*
Input IP2 vs. LO Drive*
Input P1dB vs.
Temperature @ LO = +20 dBm
* Two-tone input power = 0 dBm each tone, 1 MHz spacing.
0
5
10
15
20
25
30
35
4 6 8 10121416182022
LO = +13 dBm
LO = +15 dBm
LO = +17 dBm
LO = +20 dBm
IP3 (dBm)
FREQUENCY (GHz)
0
5
10
15
20
25
30
35
4 6 8 10121416182022
+25 C
+85 C
-55 C
IP3 (dBm)
FREQUENCY (GHz)
0
10
20
30
40
50
60
70
80
4 6 8 10121416182022
LO = +13 dBm
LO = +15 dBm
LO = +17 dBm
LO = +20 dBm
IP3 (dBm)
FREQUENCY (GHz)
0
5
10
15
20
25
4 6 8 10121416182022
+25C
+85C
-55C
P1dB (dBm)
FREQUENCY (GHz)
HMC143 / HMC144
v05.1007 GaAs MMIC DOUBLE-BALANCED
MIXER, 5 - 20 GHz
MIXERS - DOUBLE-BALANCED - CHIP
4
4 - 31
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Absolute Maximum Ratings
RF / IF Input +15 dBm
LO Drive +27 dBm
IF DC Current ± 2 mA
Channel Temperature 150 °C
Continuous Pdiss (T=85 °C)
(derate 14.2 mW/°C above 85 °C) 924 mW
Thermal Resistance (RTH)
(junction to package bottom) 70.4 °C/W
Storage Temperature -65 to +150 °C
Operating Temperature -55 to +85 °C
ESD Sensitivity (HBM) Class 1A
Die Packaging Information [1]
Standard Alternate
WP-4 [2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
Harmonics of LOMxN Spurious @ IF Port
nLO
mRF01234
0XX-1118 2 22
1430461531
26761636968
37774806880
47277778080
RF = 6 GHz @ -10 dBm
LO = 6.1 GHz @ 20 dBm
All values in dBc relative to the IF power level.
Measured as downconverter.
nLO Spur @ RF Port
LO Freq. (GHz) 1 2 3 4
637355838
838365446
10 33 36 50 56
12 28 28 41 N/A
14 30 40 N/A N/A
16 33 41 N/A N/A
18 32 47 N/A N/A
20 29 43 N/A N/A
LO = +20 dBm
All values in dBc below input LO level @ RF port.
HMC143 / HMC144
v05.1007 GaAs MMIC DOUBLE-BALANCED
MIXER, 5 - 20 GHz
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MIXERS - DOUBLE-BALANCED - CHIP
4
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Outline Drawings (See HMC143/144 Operation Application Note)
HMC143
HMC144
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM].
2. DIE THICKNESS IS .004”.
3. TYPICAL BOND PAD IS .004” SQUARE.
4. BACKSIDE METALLIZATION: GOLD.
5. BOND PAD METALLIZATION: GOLD.
6. BACKSIDE METAL IS GROUND.
7. CONNECTION NOT REQUIRED FOR
UNLABELED BOND PADS.
HMC143 / HMC144
v05.1007 GaAs MMIC DOUBLE-BALANCED
MIXER, 5 - 20 GHz
MIXERS - DOUBLE-BALANCED - CHIP
4
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Pad Number Function Description Interface Schematic
1 (2) LO This pin is AC coupled
and matched to 50 Ohms.
2 (1) RF This pin is AC coupled
and matched to 50 Ohms.
3 (3) IF
This pin is DC coupled. For applications not requiring operation
to DC, this port should be DC blocked externally using a series
capacitor whose value has been chosen to pass the necessary IF
frequency range. For operation to DC, this pin must not source/
sink more than 2 mA of current or die non-function and possible
die failure will result.
GND The backside of the die must be connected to RF ground.
Pad Descriptions HMC143 (HMC144)
HMC143 / HMC144
v05.1007 GaAs MMIC DOUBLE-BALANCED
MIXER, 5 - 20 GHz
MIXERS - DOUBLE-BALANCED - CHIP
4
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Assembly Drawing
HMC143 / HMC144
v05.1007 GaAs MMIC DOUBLE-BALANCED
MIXER, 5 - 20 GHz
MIXERS - DOUBLE-BALANCED - CHIP
4
4 - 35
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Handling Precautions
Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag
for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against ESD strikes.
Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize
inductive pick-up.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the
chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or  ngers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting
surface should be clean and  at.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature
of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip
to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for
attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy  llet is observed around the
perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
RF bonds made with 0.003” x 0.0005” ribbon are recommended. These bonds should be thermosonically bonded with a force of
40-60 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended. Ball bonds should be made
with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made with a nominal stage temperature of 150
°C. A minimum amount of ultrasonic energy should be applied to achieve reliable bonds. All bonds should be as short as possible,
less than 12 mils (0.31 mm).
HMC143 / HMC144
v05.1007 GaAs MMIC DOUBLE-BALANCED
MIXER, 5 - 20 GHz