AUTOMOTIVE GRADE Features Advanced Planar Technology Low On-Resistance Logic Level Gate Drive Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated Lead-Free, RoHS Compliant Automotive Qualified * S1 AUIRF7319Q N-CHANNEL MOSFET 1 8 N-CH D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 P-CH VDSS 30V -30V RDS(on) typ. 0.023 0.042 max. 0.029 0.058 ID 6.5A -4.9A P-CHANNEL MOSFET Top View Description Specifically designed for Automotive applications, these HEXFET(R) Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these Automotive qualified HEXFET Power MOSFET's are a 150C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. The efficient SO-8 package provides enhanced thermal characteristics and dual MOSFET die capability making it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel. Base part number Package Type AUIRF7319Q SO-8 SO-8 AUIRF7319Q G Gate Standard Pack Form Quantity Tape and Reel 4000 D Drain S Source Orderable Part Number AUIRF7319QTR Absolute Maximum Ratings Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Symbol Parameter Max. N-Channel P-Channel VDS ID @ TA = 25C ID @ TA = 70C IDM IS PD @TA = 25C PD @TA = 70C Drain-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Continuous Source Current (Diode Conduction) Maximum Power Dissipation Maximum Power Dissipation 30 6.5 5.2 30 2.5 EAS IAR EAR VGS dv/dt TJ TSTG Single Pulse Avalanche Energy (Thermally Limited) Avalanche Current Repetitive Avalanche Energy Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range 82 4.0 Thermal Resistance Symbol RJA Parameter Junction-to-Ambient ( PCB Mount, steady state) -30 -4.9 -3.9 -30 -2.5 2.0 1.3 V A W 140 -2.8 0.20 20 5.0 Units -5.0 -55 to + 150 mJ A mJ V V/ns C Typ. Max. Units --- 62.5 C/W HEXFET(R) is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2015-9-30 AUIRF7319Q Static @ TJ = 25C (unless otherwise specified) Parameter Min. Typ. Gate-to-Source Forward Leakage N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-P 30 -30 --- --- --- --- --- --- 1.0 -1.0 --- --- --- --- --- --- --- --- --- 0.022 -0.022 0.023 0.032 0.042 0.076 --- --- 14 7.7 --- --- --- --- --- --- --- --- --- 0.029 0.046 0.058 0.098 3.0 -3.0 --- --- 1.0 -1.0 25 -25 100 Gate-to-Source Reverse Leakage N-P --- --- 100 V(BR)DSS Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch VGS(th) Gate Threshold Voltage gfs Forward Trans conductance IDSS Drain-to-Source Leakage Current IGSS Max. Units Conditions VGS = 0V, ID = 250A V VGS = 0V, ID = -250A Reference to 25C, ID = 1mA V/C Reference to 25C, ID = -1mA VGS = 10V, ID = 5.8A VGS = 4.5V, ID = 4.7A VGS = -10V, ID = -4.9A VGS = -4.5V, ID = -3.6A VDS = VGS, ID = 250A V VDS = VGS, ID = -250A VDS = 15V, ID = 5.8A S VDS = -15V, ID = -4.9A VDS =24V, VGS = 0V VDS = -24V,VGS = 0V A VDS =24V, VGS = 0V ,TJ = 55C VDS = -24V,VGS = 0V,TJ = 55C VGS = 20V nA VGS = 20V Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise specified) Qg Total Gate Charge Qgs Gate-to-Source Charge Qgd Gate-to-Drain Charge td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- 22 23 2.6 3.8 6.4 5.9 8.1 13 8.9 13 26 34 17 32 650 710 320 380 130 180 Min. Typ. --- --- --- --- --- --- --- --- --- --- --- --- --- 0.78 -0.78 45 44 58 42 33 34 3.9 5.7 9.6 8.9 12 19 13 20 39 51 26 48 --- --- --- --- --- --- nC ns pF N-Channel ID = 5.8A, VDS = 15V,VGS = 10V P-Channel ID = -4.9A,VDS = -15V,VGS = -10V N-Channel VDD = 15V,ID = 1.0A,RG = 6.0 RD = 15 P-Channel VDD = -15V,ID = -1.0A,RG = 6.0 RD = 15 N-Channel VGS = 0V,VDS = 25V, = 1.0MHz P-Channel VGS = 0V,VDS = -25V, = 1.0MHz Diode Characteristics Parameter IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Max. Units 2.5 -2.5 30 -30 1.0 -1.0 68 66 87 63 Conditions A V ns nC TJ = 25C,IS = 1.7A,VGS = 0V TJ = 25C,IS = -1.7A,VGS = 0V N-Channel TJ = 25C ,IF = 1.7A, di/dt = 100A/s P-Channel TJ = 25C,IF = -1.7A, di/dt = 100A/s Notes: Repetitive rating; pulse width limited by max. junction temperature. (See Fig. 22) N-Channel ISD 4.0A, di/dt 74A/s, VDD V(BR)DSS, TJ 150C. P-Channel ISD -2.8A, di/dt 150A/s, VDD V(BR)DSS, TJ 150C N-Channel Starting TJ = 25C, L = 10mH, RG = 25, IAS = 4.0A. (See Fig. 12) P-Channel Starting TJ = 25C, L = 35mH, RG = 25, IAS = -2.8A. Pulse width 300s; duty cycle 2%. Surface mounted on FR-4 board , t sec. 2 2015-9-30 AUIRF7319Q N-Channel 100 100 VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V TOP I D, Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP 10 3.0V 20s PULSE WIDTH TJ = 25C A 1 0.1 1 10 3.0V 20s PULSE WIDTH TJ = 150C A 1 0.1 10 100 ISD , Reverse Drain Current (A) 100 I D , Drain-to-Source Current (A) 10 Fig. 2 Typical Output Characteristics Fig. 1 Typical Output Characteristics TJ = 25C TJ = 150C 10 VDS = 10V 20s PULSE WIDTH 1 3.0 3.5 4.0 4.5 A 5.0 VGS , Gate-to-Source Voltage (V) Fig. 3 Typical Transfer Characteristics 3 1 VDS, Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) TJ = 150C 10 TJ = 25C VGS = 0V 1 0.4 0.6 0.8 1.0 1.2 1.4 A 1.6 VSD , Source-to-Drain Voltage (V) Fig. 4 Typical Source-Drain Diode Forward Voltage 2015-9-30 N-Channel RDS(on) , Drain-to-Source On Resistance (Normalized) 2.0 ID = 5.8A 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 TJ, Junction Temperature ( C) Fig 5. Normalized On-Resistance Vs. Temperature Fig. 7 Typical On-Resistance Vs. Gate Voltage 4 AUIRF7319Q Fig 6. Typical On-Resistance Vs. Drain Current Fig 8. Maximum Avalanche Energy Vs. Drain Current 2015-9-30 AUIRF7319Q N-Channel 20 900 VGS , Gate-to-Source Voltage (V) V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = Cds + C gd Ciss Coss 600 Crss 300 0 1 10 100 ID = 5.8A VDS = 15V 16 12 8 4 0 0 10 20 30 40 QG , Total Gate Charge (nC) A VDS , Drain-to-Source Voltage (V) Fig 9. Typical Capacitance Vs. Drain-to-Source Voltage Fig 10. Typical Gate Charge Vs. Gate-to-Source Voltage 100 Thermal Response (Z thJA ) C, Capacitance (pF) 1200 0.50 0.20 10 0.10 0.05 0.02 1 PDM 0.01 t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 t1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 5 2015-9-30 AUIRF7319Q P-Channel 100 100 VGS - 15V - 10V - 7.0V - 5.5V - 4.5V - 4.0V - 3.5V BOTTOM - 3.0V VGS - 15V - 10V - 7.0V - 5.5V - 4.5V - 4.0V - 3.5V BOTTOM - 3.0V TOP -I D , Drain-to-Source Current (A) -ID , Drain-to-Source Current (A) TOP 10 -3.0V 20s PULSE WIDTH TJ = 25C A 1 0.1 1 10 -3.0V 20s PULSE WIDTH TJ = 150C A 1 10 0.1 -VDS, Drain-to-Source Voltage (V) 100 -ISD , Reverse Drain Current (A) 100 -I D , Drain-to-Source Current (A) 10 Fig. 13 Typical Output Characteristics Fig. 12 Typical Output Characteristics TJ = 25C TJ = 150C 10 V DS = -10V 20s PULSE WIDTH 1 3.0 3.5 4.0 4.5 5.0 5.5 -VGS , Gate-to-Source Voltage (V) Fig. 14 Typical Transfer Characteristics 6 1 -VDS, Drain-to-Source Voltage (V) 6.0 A TJ = 150C 10 TJ = 25C VGS = 0V 1 0.4 0.6 0.8 1.0 1.2 A 1.4 -VSD , Source-to-Drain Voltage (V) Fig. 15 Typical Source-Drain Diode Forward Voltage 2015-9-30 P-Channel Fig 16. Normalized On-Resistance Vs. Temperature Fig. 18 Typical On-Resistance Vs. Gate Voltage 7 AUIRF7319Q Fig 17. Typical On-Resistance Vs. Drain Current Fig 19. Maximum Avalanche Energy Vs. Drain Current 2015-9-30 P-Channel AUIRF7319Q -VGS , Gate-to-Source Voltage (V) 20 ID = -4.9A VDS =-15V 16 12 8 4 0 0 10 20 30 40 QG, Total Gate Charge (nC) Fig 20. Typical Capacitance Vs. Drain-to-Source Voltage Fig 21. Typical Gate Charge Vs. Gate-to-Source Voltage Thermal Response (Z thJA ) 100 0.50 0.20 10 0.10 0.05 0.02 1 PDM 0.01 t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 t1, Rectangular Pulse Duration (sec) Fig 22. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 8 2015-9-30 AUIRF7319Q SO-8 Package Outline (Dimensions are shown in millimeters (inches) D 8 6 7 6 M AX M IN A .0532 .0688 1.35 1.75 A1 .0040 .0098 0.10 0.25 b .013 .020 0.33 0.51 c .0075 .0098 0.19 0.25 D .189 .1968 4.80 5.00 E .1497 .1574 3.80 4.00 e .050 B ASIC 1.27 B ASIC e1 5 H E 1 6X 2 3 0.25 [ .010] 4 A e e1 A1 0.25 [ .010] C A M AX .025 B ASIC 0.635 BASIC H .2284 .2440 5.80 6.20 K .0099 .0196 0.25 0.50 L .016 .050 0.40 1.27 y 0 8 0 8 K x 45 A C 8X b M ILLIM ETERS M IN 5 A IN C H ES D IM B y 0.10 [ .004] B 8X L F O O T P R IN T N O TE S : 1. D IM E N S IO N IN G & T O L E R A N C IN G P E R A S M E Y 1 4 . 5 M - 1 9 9 4 . 2. C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R 3. D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S [ IN C H E S ] . 4. O U T L IN E C O N F O R M S T O J E D E C O U T L IN E M S - 0 1 2 A A . 5 D IM E N S IO N D O E S N O T IN C L U D E M O L D P R O T R U S IO N S . M O L D P R O T R U S IO N S N O T T O E X C E E D 0 .1 5 [ . 0 0 6 ] . 6 D IM E N S IO N D O E S N O T IN C L U D E M O L D P R O T R U S IO N S . M O L D P R O T R U S IO N S N O T T O E X C E E D 0 .2 5 [ . 0 1 0 ] . 7 D IM E N S IO N IS T H E L E N G T H O F L E A D F O R S O L D E R IN G T O A S U B S TR A TE . 8X c 7 8 X 0 .7 2 [ .0 2 8 ] 6 .4 6 [ .2 5 5 ] 3 X 1 .2 7 [ .0 5 0 ] 8 X 1 .7 8 [ .0 7 0 ] SO-8 Part Marking Information 9 2015-9-30 AUIRF7319Q SO-8 Tape and Reel (Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. 10 2015-9-30 AUIRF7319Q Qualification Information Qualification Level Moisture Sensitivity Level Machine Model Human Body Model ESD Charged Device Model RoHS Compliant Automotive (per AEC-Q101) Comments: This part number(s) passed Automotive qualification. Infineon's Industrial and Consumer qualification level is granted by extension of the higher Automotive level. SO-8 MSL1 Class M2 (+/- 200V) AEC-Q101-002 Class H1A (+/- 500V) AEC-Q101-001 Class C5 (+/- 2000V) AEC-Q101-005 Yes Highest passing voltage. Revision History Date 3/4/2014 9/30/2015 Comments Added "Logic Level Gate Drive" bullet in the features section on page 1 Updated data sheet with new IR corporate template Updated datasheet with corporate template Corrected ordering table on page 1. Published by Infineon Technologies AG 81726 Munchen, Germany (c) Infineon Technologies AG 2015 All Rights Reserved. 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