GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFOR M ANC E CH ARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
TAN 300
300 Watts, 50 Volts, Pulsed
Avionics 960 - 1215 MHz
GENERAL DESCRIPTION
The TAN 300 is a high power COMMON BASE bipolar transistor. It is
designed for pulsed systems in the frequency band 960-1215 MHz. The
device has gold thin-film metallization and diffused ballasting for proven
highest MTTF. The transistor includes input and output prematch for
broadband capability. Low thermal resistance package reduces junction
temperature, extend s life.
CASE OUTLINE
55KT Style 1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25 C 1166 Watts
o2
Maximum Voltage and Current
BVces Collector to Base Voltage 65 Volts
BVebo Emitter to Base Voltage 2.0 Volts
Ic Collector Current 20 Amps
Maximu m Temperatures
Storage Temperature - 65 to + 200 C
o
Operating Junction Temperature + 200 C
o
ELECTRICAL CHARACTERISTICS @ 25 C
O
SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS
Pout
Pin
Pg
ηc
VSWR
Power Out
Power Input
Power Gain
Collector Efficiency
Load Mismatch Tolerance
F = 960-1215 MHz
Vcc = 50 Volts
PW = 10 µsec
DF = 10%
F = 1090 MHz
300
6.6 45
60
10:1
Watts
Watts
dB
%
BVebo
BVces
hFE
θjc2
Emitter to Base Breakdown
Collector to Emitter Breakdo wn
DC - Current Gain
Thermal Resistance
Ie = 25 mA
Ic = 50 mA
Ic = 1A, Vce = 5 V
2.0
65
10 .15
Volts
Volts
C/W
o
Note 1: At rated output power and pulse conditions
2: At rated pulse conditions
Initial Issue June, 1994
.TAN300
June 1996
