2SK3549-01 200401 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features 11.60.2 High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Operating and storage temperature range Symbol V DS VDSX *5 ID ID(puls] VGS IAR *2 EAS *1 dVDS/dt *4 dV/dt *3 PD Ta=25C Tc=25C Tch Tstg Ratings 900 900 10 40 30 10 330 40 5 2.50 270 +150 -55 to +150 Unit V V A A V A mJ kV/s kV/s W Equivalent circuit schematic Drain(D) Gate(G) Source(S) C C *1 L=6.06mH, Vcc=90V,Tch=25C, See to Avalanche Energy Graph *2 Tch < 150C = < *3 IF < = BVDSS, Tch < = 150C *4 VDS= 900V *5 VGS=-30V = -ID, -di/dt=50A/s, Vcc < Electrical characteristics (Tc =25C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD t rr Qrr Test Conditions ID= 250A VGS=0V ID= 250A VDS=VGS VDS=900V VGS=0V Tch=25C Tch=125C VDS=720V VGS=0V VGS=30V VDS=0V ID=5A VGS=10V ID=5A VDS=25V Min. 6 VDS =25V VGS=0V f=1MHz VCC=600V ID=5A VGS=10V RGS=10 VCC =450V ID=10A VGS=10V L=6.06mH Tch=25C IF=10A VGS=0V Tch=25C IF=10A VGS=0V -di/dt=100A/s Tch=25C Typ. 900 3.0 Max. 5.0 25 250 100 1.40 1.08 12 1250 1900 160 240 12 18 26 39 23 35 60 90 17 26 34.5 52 5 7.5 12 18 10 0.90 3.1 17.0 1.50 Units V V A nA S pF ns nC A V s C Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient http://store.iiic.cc/ Min. Typ. Max. 0.463 50.0 Units C/W C/W 1 2SK3549-01 FUJI POWER MOSFET Characteristics Allowable Power Dissipation PD=f(Tc) 300 15 Typical Output Characteristics ID=f(VDS):80 s pulse test,Tch=25C 10V 8.0V 7.0V 20V 250 6.5V 10 ID [A] PD [W] 200 150 6.0V 5 100 50 VGS=5.5V 0 0 0 25 50 75 100 125 0 150 5 10 15 20 VDS [V] Tc [C] Typical Transfer Characteristic ID=f(VGS):80 s pulse test,VDS=25V,Tch=25C 100 Typical Transconductance gfs=f(ID):80 s pulse test,VDS=25V,Tch=25C gfs [S] ID[A] 10 1 10 1 0.1 0 1 2 3 4 5 6 7 8 9 10 0.1 1 VGS[V] 1.6 Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 s pulse test,Tch=25C VGS=5.5V 10 ID [A] 4.0 Drain-Source On-state Resistance RDS(on)=f(Tch):ID=5A,VGS=10V 6.0V 3.5 1.5 7.0V 8.0V 10V 1.4 20V 1.3 3.0 RDS(on) [ ] RDS(on) [ ] 6.5V 2.5 2.0 max. 1.5 1.2 typ. 1.0 1.1 0.5 1.0 0.0 0 5 10 15 -50 -25 0 25 50 75 100 125 150 Tch [C] ID [A] http://store.iiic.cc/ 2 2SK3549-01 7.0 FUJI POWER MOSFET Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250 A 12 Typical Gate Charge Characteristics VGS=f(Qg):ID=10A,Tch=25C 6.5 6.0 10 5.5 8 4.5 4.0 VGS [V] VGS(th) [V] Vcc= 180V 450V 720V max. 5.0 3.5 3.0 min. 2.5 6 4 2.0 1.5 2 1.0 0.5 0 0.0 -50 -25 0 25 50 75 100 125 0 150 5 10 15 10 1 10 0 10 20 25 30 35 40 Qg [nC] Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 s pulse test,Tch=25C Typical Capacitance C=f(VDS):VGS=0V,f=1MHz 10 Ciss -1 Coss IF [A] C [nF] Tch [C] 1 10 -2 10 -3 Crss 10 0 10 1 10 0.1 0.00 2 0.25 0.50 VDS [V] 10 3 0.75 1.00 1.25 1.50 VSD [V] Typical Switching Characteristics vs. ID t=f(ID):Vcc=600V,VGS=10V,RG=10 1000 Maximum Avalanche Energy vs. starting Tch E(AS)=f(starting Tch):Vcc=90V IAS=4A 800 tf 10 2 600 EAS [mJ] t [ns] td(off) td(on) 10 IAS=6A 400 IAS=10A 1 tr 200 10 0 10 0 -1 10 0 10 1 0 25 50 75 100 125 150 starting Tch [C] ID [A] http://store.iiic.cc/ 3 Avalanche Current I AV [A] 2SK3549-01 10 2 10 1 10 0 FUJI POWER MOSFET Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25C,Vcc=90V Single Pulse 10 -1 -2 10 -8 10 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 Zth(ch-c) [C/W] tAV [sec] 10 1 10 0 10 -1 10 -2 10 -3 Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t [sec] http://www.fujielectric.co.jp/denshi/scd/ http://store.iiic.cc/ 4