4N39X, 4N40X 4N39, 4N40 PHOTON COUPLED ISOLATOR Ga As INFRARED EMITTING DIODE & LIGHT ACTIVATED SCR APPROVALS l UL recognised, File No. E91231 Dimensions in mm 2.54 7.0 6.0 'X' SPECIFICATION APPROVALS l VDE 0884 in 2 available lead forms : - STD - G form 7.62 max. 1 6 2 5 3 4 8.3 max. DESCRIPTION The 4N39, 4N40 are optically coupled isolators consisting of infrared light emitting diode and a light activated silicon controlled rectifier in a standard 6pin dual in line plastic package. FEATURES l Options :10mm lead spread - add G after part no. Surface mount - add SM after part no. Tape&reel - add SMT&R after part no. l High Isolation Voltage (5.3kVRMS ,7.5kVPK ) l High Surge Anode Current (5.0 A) l High Blocking Voltage (200V*1, 400V*1) l Low Turn on Current (5mA typical) l All electrical parameters 100% tested l Custom electrical selections available APPLICATIONS l 10A, T2L compatible, Solid State Relay l 25W Logic Indicator Lamp Driver l 400V Symmetrical transistor coupler OPTION SM OPTION G SURFACE MOUNT 1.2 0.6 10.2 9.5 1.4 0.9 8.3 max 0.26 10.16 ISOCOM COMPONENTS LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, Cleveland, TS25 1YD Tel: (01429) 863609 Fax :(01429) 863581 5/12/00 5.1 max. 0.5 min. 3.9 3.1 0.48 0.25 15 Max ABSOLUTE MAXIMUM RATINGS (25C unless otherwise specified) Storage Temperature -55C to + 150C Operating Temperature -55C to + 100C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260C INPUT DIODE Forward Current Forward Current (Peak) (1s pulse, 300pps) Reverse Voltage Power Dissipation 60mA 3A 6V 100mW DETECTOR Peak Forward Voltage 4N39 4N40 Peak Reverse Gate Voltage RMS On-state Current Peak On-state Current (100s, 1% duty cycle) Surge Current (10ms) Power Dissipation 200V*1 400V*1 6V 300mA 10A 5A 300mW *1 IMPORTANT : A resistor must be connected between gate and cathode (pins 4 & 6) to prevent false firing (RGK < 56k) ISOCOM INC 1024 S. Greenville Ave, Suite 240, Allen, TX 75002 USA Tel: (214) 495-0755 Fax: (214) 495-0901 e-mail info@isocom.com http://www.isocom.com DB91033AAS/A3 ELECTRICAL CHARACTERISTICS ( TA= 25C Unless otherwise noted ) Input Output (note 2) PARAMETER MIN TYP MAX UNITS Forward Voltage (VF) Reverse Voltage (VR) 3 V V IF = 10mA IR = 10A Peak Off-state Voltage (VDM ) 4N39 200 V 4N40 400 V Peak Reverse Voltage (VRM ) 4N39 RGK=10k, ID= 50A, TA= 100C RGK=10k,ID=150A, TA=100C 200 V 4N40 400 V 1.2 On-state Voltage (VTM ) Coupled 1.1 1.3 V Off-state Current (IDM ) 4N39 50 A 4N40 150 A Reverse Current (IR ) 4N39 50 A 4N40 150 A Holding Current (IH) 1 mA 30 14 50 mA mA s 2 V/s VRMS VPK pF Input Current to Trigger ( IFT ) (note 2) Turn on Time ( ton ) Coupled dv/dt, Input to Output (dv/dt) Input to Output Isolation Voltage VISO Input-output Isolation Resistance RISO Input-output Capacitance Cf Note 1 Note 2 5/12/00 1.5 500 5300 7500 1011 TEST CONDITION RGK=10k, ID= 50A, TA=100C RGK=10k,ID=150A, TA=100C ITM = 300mA RGK=10k, IF= 0, VDM=200V, TA=100C RGK=10k, IF= 0, VDM=400V, TA=100C RGK=10k, IF= 0, VDM=200V, TA=100C RGK=10k, IF= 0, VDM=400V, TA=100C RGK=27k, VFX=50V VAK =50V, RGK=10k VAK=100V, RGK=27k RGK=10k, IF=30m, VAK=50V, RL=200 See note 1 See note 1 VIO = 500V (note 1) V = 0, f =1MHz Measured with input leads shorted together and output leads shorted together. Special Selections are available on request. Please consult the factory. DB91033-AAS/A3 20 RGK =300 10 1k 4 2 10k 1.0 27k 0.4 56k 0.2 0.1 5 10 12 RGK =300 10 1k 4 2 10k 1.0 27k 0.4 56k 0.2 0.1 -60 -40 -20 50 100 200 Normalized to VAK = 50V R =10k = 25 C A 90th percentile 10th percentile 0.4 0.2 100 Normalized to VAK = 50V RGK =10k TA = 25 C RGK =300 40 20 1k 10 4 10k 27k 2 56k 1 0.4 0.2 0.1 1 -40 -20 0 20 40 60 80 100 Ambient temperature TA ( C ) RGK=1k 56k 2 0 4 6 10 20 40 60 100 200 400 1000 Pulse width ( s ) 100 VAK = 50V ton = td + tr tr = 1s 40 20 Forward current I F (mA) 10k 2 Input Characteristics IF vs. VF Turn on Time vs. Input Current Turn on time t on (s) 80 100 120 Input Current to Trigger vs. Pulse Width 0.1 25C 10 100C -55C 4 2 1 0.4 0.2 0.1 0 10 20 30 40 50 60 70 80 90 100 Input current IF (mA) 5/12/00 20 40 60 Input Current to Trigger Distribution vs. Ambient Temperature 1 16 14 12 10 8 6 4 0 Ambient temperature TA ( C ) 4 24 22 20 18 Normalized to VAK = 50V, RGK =10k, TA = 25 C Anode to cathode voltage VAK ( V ) 10 2 Normalized input current to trigger I 40 FT FT Normalized to VAK = 50V RGK =10k TA = 25 C FT 100 1 Normalized input current to trigger I Input Current to Trigger vs. Ambient Temperature Normalized input current to trigger I Normalized input current to trigger I FT Input Current to Trigger vs. Anode to Cathode Voltage 0 0.5 1 1.5 2 2.5 3 Forward voltage VF ( V ) DB91033-AAS/A3 Holding Current vs. Ambient Temperature 400 200 10k 100 27k 40 20 10 56k -60 -40 -20 0 20 40 60 80 100 120 Junction to ambient 100 d 1k 1000 1. Lead temperature measured at the widest portion of the SCR anode lead. 400 2. Ambient temperature measured at 200 a point 1/2" from the device. n to lea RGK =300 4000 2000 1000 40 20 10 Junctio Normalized to VAK = 50V RGK =10k TA = 25 C Transient thermal impedance ( C / Watt ) 4 2 1 0.001 0.01 Ambient temperature TA ( C ) 400 200 100 VAK = 400V 40 20 10 4 2 1 100 90 1. Ambient temp. half-sine wave avg 2. Ambient temp. DC current 3. Anode lead temp. half-sine wave avg 4. Anode lead temp. DC current 80 70 60 50 40 30 20 10 1. 25 50 75 100 Ambient temperature TA ( C ) 0 0.2 3. 4. 400 1 0.4 1k 10 10k On state current I T (A) 100 40 4 27k 1 0.4 0.2 0.1 0.04 0.02 0.01 56k Increases to forward breakover voltage 0.1 25 50 1.0 2 RGK =300 Junction temperature = 100C 1000 0.4 0.6 0.8 On state current ( ) On State Characteristics dV/dt vs. Ambient temperature 5/12/00 2. 0 0 Critical rate of rise applied forward voltage dV/dt (V/ s) VAK = 50V VAK = 200V 100 On State Current vs. Maximum Allowable Temperature Maximum allowable temperature ( C ) Normalized forward current off state ( I D ) Normalized to VAK = 50V TA = 25 C 1 2 4 10 Time (seconds) Off State Forward Current vs. Ambient Temperature 10000 4000 2000 1000 0.1 Junction temperature = 25C Holding current I H ( A) 10000 Maximum Transient Thermal Impedence 75 100 Ambient temperature TA ( C ) 0 1 2 3 On state voltage VT ( V ) 4 DB91033-AAS/A3