~ -BTW45 SERIES T-~ as-is ObE D MM 6653931 0011455 b -_ THYRISTORS _ Glass-passivated silicon thyristors in metal envelopes, intended for power control applications. The series consistos of reverse polarity types (anode to stud) identified by a suffix R: BTW45-400R to 1200R. QUICK REFERENCE DATA BTW45-400R | 600R | 800R| 1000R | 1200R Repetitive peak voltages | | | | VorM= Vram max. 400 ! 600 i 800 | 1000 | 1200 v Average on-state current IT(AV) max. 16 A R.M.S. on-state current IT(RMS) max. 254A Non-repetitive peak on-state current ltsm max, 300 A Rate of rise of off-state voltage that will not trigger any device dVp/dt < 200 V/ps On request (see Ordering Note) dVp/dt < 1000 V/ys MECHANICAL DATA Dimensions in mm Fig. 1 TO-48: with metric M6 stud (6 6 mm); e.g. BTW45-400R. Types with % in x 28 UNF stud ( 6,35 ram) are available on request. These are indicated by the suffix U: BTW45-400RU., 4.2 a2 . _ 7.6 > 2.9min | max 20 | | oF 12.4 late . min fj [re min t g | L193 J | ime b+12,8max ++- 22.2 max 1.5 19.797 30. max Net mass: 14 g Torque on nut: min, 1,7 Nm (17 kg cm) Diameter of clearance hole: max. 6,5 mm max. 3,5 Nm (35 kg em) Accessories supplied on request: Supplied with the device: see ACCESSORIES section 1 nut, 1 lock washer Nut dimensions across the flats; M6: 10 mm -_ % in x 28 UNF: 11,7 mm Products approved to CECC 50 011-002, available on request February 1984 973BTW45 SERIES N AMER PHILIPS/DISCRETE OhE D a 6653931 OOL195b 8 = T-25-15 974 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Anode to cathode BTW45-400R | SOOR | 80OR | 1000R | 1200R Non-repetitive peak voltages (t < 10 ms) Vosm/VRsm max. 400 | 600 | 800 | 1000 |1200 v Repetitive peak voltages VprmM/VRRM max. 400 | 600 | 800 | 1000 |1200 v Crest working voltages Vowm/VRwM max. 300 | 400 | 600 | 700 | 800 v* Average on-state current (averaged over any 20 ms period) up to Trp = 85 OC IT(AV) max. 16 A R.M.S. on-state current IT(RMS) = max. 25 A Repetitive peak on-state current ITRM max. 200 A Non-repetitive peak on-state current; t = 10 ms; half sine-wave; Tj = 125 C prior to surge; with reapplied VawM max ITSM max, 300 A I? t for fusing (t = 10 ms) I?t max, 450 As Rate of rise of on-state current after triggering with Ig = 400 mA to I7 = 60 A; dig/dt = 0,4 A/us diy/dt max. 100 A/us Gate to cathode Reverse peak voltage VRGM max. 10 V Average power dissipation (averaged over any 20 ms period) PG(AV) max. TW Peak power dissipation Pom max, 5 W Temperatures Storage temperature Tstg 55 to+125 C Junction temperature Tj max. 125 9C THERMAL RESISTANCE From junction to mounting base Rih j-mb = 1,33 C/W From mounting base to heatsink; with heatsink compound Rthmb-h = 0,2 C/W Transient thermal impedance (t = 1 ms) 2thjmb == 0,1 C/W OPERATING NOTE The terminals should neither be bent nor twisted; they should be soldered into the circuit so that there is no strain on them. During soldering the heat conduction to the junction should be kept to a minimum. * To ensure thermal stability: Rthj-a < 6,5 C/W (d.c. blocking} or < 13 C/W (a.c.). For smaller heatsinks Tj max should be derated. For a.c. see Fig, 2. November 1979N AMER PHILIPS/DISCRETE Thyristors SCS CHARACTERISTICS Anode to cathode On-state voltage 7 = 50 A; Tj = 25 C Rate of rise of off-state voltage that will not trigger any device; exponential method; Vp = 2/3 VDRMmax: Tj = 125 Reverse current Vr = VRWM max: Tj = 125 9 Off-state current Vp = VDWM max: Tj = 125 C Latching current; Tj = 25 C Holding current; Tj = 25 C Gate to cathode Voltage that will trigger all devices Vp =6 V; Tj = 25 9C Voltage that will not trigger any device Vp = VoRM max! Tj = 125 C Current that will trigger all devices Vp = 6 V; Tj = 25 C Switching characteristics Gate-controlled turn-on time (tgt = ty + ty) when switched from Vp = Vow max to I = 100 A; IGT = 400 mA; dig/dt = 1 A/us: Tj = 25C t Ty 1 90%. t# ty | t, | t tot __> Tor 0 1 10% FZFVSiol ORDERING NOTE Types with dVp/dt of 1000 V/us are available on request. ordering; e.g. BTW45-400RC. a ul _ OBE D MM 6653931 0013957 T = ~ |[ BTW45 SERIES _T=25-15 dVp/dt < 200 V/ps Ip < 3 mA Ip < 3 mA I < 150 mA ly < 75 mA VGT > 1,5 V Vep < 200 mv IGT > 75mA 1 ps 0,5 ps AA Gate-controlled turn-on time definition. Add suffix C to the type number when *Measured under pulse conditions to avoid excessive dissipation. November 1979 975N AMER PHILIPS/DISCRETE ObE D = 66534931 DOL1L954 L = BTW45 SERIES Sens L Oo TAQS~1S 7272520.1 30 85 P Tmb (W) (c) 20 98 10 112 0 125 0 10 IT (Av) (A) 20 0 50 Tamb (C) 100 Fig. 2. 400 7272519 maximum permissible non-repetitive I r.m.s, on-state current based on mys! sinusoidal currents ( f = 50 Hz ) I . 77 Lise 300 lhstrms) time with reapplied V pwmax 200 100 Tj =125C prior to surge 1073 10-2 10-1 1 ~ duration-{s) 10 Fig. 3. 976 April 1978ert AMER PHILIPS/DISCRETE OLE D 6653931 OOLLIST 3 = Thyristors | BTW45 SERIES / T-a25- 195 72725351 " 72725345 Tj =125 dVy dt (V/ps dVp dt (V/ps 1000 400 : % 50 400 150 % 50 V, 100 , T; (C) OM (%o} VorMmax Fig. 4 Maximum rate of rise of off-state Fig. 5 Maximum rate of rise of off-state voltage that will not trigger any device voltage that will not trigger any device (exponential method) as a function of Tj. {exponential method) as a function of applied 7272618,1 voltage. T= 25 It == =125 (A) 40 : 20 0 o 2 vyuM 4 Fig. 6. : (ro 1978 977N AMER PHILIPS/DISCRETE | b6S393L BOLLE T = ~ BTW45 SERIES J L 1.25. is _ 7267985 7272521 150 Vor (V) Igr (mA) 100 50 0 0 ~-50 0 50 100 450 -50 0 50 100 450 Tj (C) T; (C) Fig. 7 Minimum gate voltage that will Fig. 8 Minimum gate current that will trigger all devices as a function of Tj. trigger all devices as a function of Tj 40 7272564 Zth j-mb (C/W) 10-1 10-2 10-3 107-8 40-4 10-3 10-2 10-1 1 time (s) 10 Fig. 9. 978 April 1978 (