DIODE Type:PB10S1,2,4,6 OUTLINE DRAWING
Maximum Ratings Approx Net Weight:8.5g
FEATURES
* Surge Overload Rating : 150 Amperes Peak
* Low Forward Voltage Drop
* Mounting Position : Any
SINGLE – PHASE SILICON BRIDGE RECTIFIER
Rating Symbol PB10S1 PB10S2 PB10S4 PB10S6 Unit
Repetitive Peak Reverse Voltage VRRM 100 200 400 600 V
Non-repetitive Peak Reverse Voltage VRSM 120 240 480 680 V
10 Tc=102°C, With 200x200x1.5mm,Al-Fin
Average Rectified Output Current IO 3.7 Ta=40°C, Without Fin A
Surge Forward Current Per 1 Arm IFSM 150
50 Hz Half Sine Wave,1cycle
Non-repetitive A
Operating JunctionTemperature Range Tjw - 40 to + 150 °C
Storage Temperature Range Tstg - 40 to + 150 °C
Insuration Withstand Voltage Viso 1500 Terminal to Base, AC 1min. V
Mounting torque Fw 0.5 Recommended value N•m
Electrical • Thermal Characteristics
Characteristics Symbol Conditions Min. Typ. Max. Unit
Peak Reverse Current Per 1 Arm IRM Tj= 25°C, VRM= VRRM - - 5
µA
Peak Forward Voltage Per 1 Arm VFM Tj= 25°C, IFM= 5A - - 1.0 V
Thermal Resistance Rth(j-c) Junction to Case(total) - - 3.5 °C/W
PB10S1,2,4,6 OUTLINE DRAWING (Dimensions in mm)
