Agilent ATF-501P8 High Linearity Enhancement Mode [1] Pseudomorphic HEMT in 2x2 mm2 LPCC [3] Package Data Sheet Features * Single voltage operation * High Linearity and P1dB * Low Noise Figure Pin Connections and Package Marking The thermally efficient package measures only 2mm x 2mm x 0.75mm. Its backside metalization provides excellent thermal dissipation as well as visual evidence of solder reflow. The device has a Point MTTF of over 300 years at a mounting temperature of +85C. All devices are 100% RF & DC tested. Pin 1 (Source) Notes: 1. Enhancement mode technology employs a single positive Vgs, eliminating the need of negative gate voltage associated with conventional depletion mode devices. 2. Refer to reliability datasheet for detailed MTTF data. 3. Conforms to JEDEC reference outline MO229 for DRP-N. 4. Linearity Figure of Merit (LFOM) is essentially OIP3 divided by DC bias power. Pin 8 Pin 7 (Drain) Pin 6 Pin 5 Source (Thermal/RF Gnd) Description Agilent Technologies's ATF501P8 is a single-voltage high linearity, low noise E-pHEMT housed in an 8-lead JEDECstandard leadless plastic chip carrier (LPCC[3]) package. The device is ideal as a mediumpower amplifier. Its operating frequency range is from 50 MHz to 6 GHz. Pin 1 (Source) Pin 2 (Gate) Pin 3 Pin 4 (Source) * Excellent uniformity in product specifications * Small package size: 2.0 x 2.0 x 0.75 mm3 * Point MTTF > 300 years[2] * MSL-1 and lead-free * Tape-and-Reel packaging option available Bottom View Specifications * 2 GHz; 4.5V, 280 mA (Typ.) Pin 2 (Gate) Pin 3 Pin 8 0Px Pin 4 (Source) Pin 7 (Drain) Pin 6 Pin 5 Top View Note: Package marking provides orientation and identification: "0P" = Device Code "x" = Date code indicates the month of manufacture. * 45.5 dBm Output IP3 * 29 dBm Output Power at 1dB gain compression * 1 dB Noise Figure * 15 dB Gain * 14.5 dB LFOM[4] * 65% PAE * 23oC/W thermal resistance Applications * Front-end LNA Q2 and Q3, Driver or Pre-driver Amplifier for Cellular/ PCS and WCDMA wireless infrastructure * Driver Amplifier for WLAN, WLL/ RLL and MMDS applications * General purpose discrete E-pHEMT for other high linearity applications ATF-501P8 Absolute Maximum Ratings[1] Symbol Parameter Units Absolute Maximum VDS Drain-Source Voltage[2] V 7 VGS Gate-Source Voltage[2] V -5 to 0.8 VGD Gate Drain Voltage[2] V -5 to 1 IDS Drain Current[2] A 1 IGS Gate Current mA 12 Pdiss Total Power Dissipation[3] W 3.5 Pin max. RF Input Power dBm 30 TCH Channel Temperature C 150 TSTG Storage Temperature C -65 to 150 ch_b Thermal Resistance[4] C/W 23 Notes: 1. Operation of this device in excess of any one of these parameters may cause permanent damage. 2. Assumes DC quiescent conditions. 3. Board (package belly) temperatureTB is 25C. Derate 43.5 mW/C for TB > 69.5C. 4. Channel-to-board thermal resistance measured using 150C Liquid Crystal Measurement method. Product Consistency Distribution Charts at 2 GHz, 4.5V, 200 mA [5,6] Vgs=0.7V 700 100 600 Cpk=1.76 Stdev=0.3 -3 Std 60 400 300 Vgs=0.55V 200 Vgs=0.5V 100 0 1 2 3 4 5 6 60 40 20 20 0 27.5 28 28.5 29 29.5 30.5 30 Figure 3. PAE. 100 Cpk=1.1 Stdev=0.87 Cpk=1.61 Stdev=0.33 80 80 60 60 -3 Std +3 Std 40 40 20 20 14 15 16 17 0 42 43 44 +3 Std 45 46 47 48 49 50 OIP3 (dBm) GAIN (dB) Figure 4. Gain. 55 +3 Std 65 PAE (%) Figure 2. P1dB. 100 -3 Std 0 45 -3 Std P1dB (dBm) Figure 1. Typical IV curve (Vgs = 0.01V) per step. 0 13 +3 Std 40 Vds (V) Figure 5. OIP3. Notes: 5. Distribution data sample size is 300 samples taken from 3 different wafers and 3 different lots. Future wafers allocated to this product may have nominal values anywhere between the upper and lower limits. 6. Measurements are made on production test board, which represents a trade-off between optimal OIP3, P1dB and VSWR. Circuit losses have been de-embedded from actual measurements. 2 Cpk=1.51 Stdev=3.38 80 80 Vgs=0.6V 0 100 Vgs=0.65V 500 Ids (mA) 120 120 800 75 85 ATF-501P8 Electrical Specifications TA = 25C, DC bias for RF parameters is Vds = 4.5V and Ids = 280 mA unless otherwise specified. Symbol Parameter and Test Condition Units Min. Typ. Max. Vgs Operational Gate Voltage Vds = 4.5V, Ids = 280 mA V 0.42 0.55 0.67 Vth Threshold Voltage Vds = 4.5V, Ids = 32 mA V -- 0.33 -- Idss Saturated Drain Current Vds = 4.5V, Vgs = 0V A -- 5 -- Gm Transconductance Vds = 4.5V, Gm = Ids/Vgs; Vgs = Vgs1 - Vgs2 Vgs1 = 0.55V, Vgs2 = 0.5V mmho -- 1872 -- Igss Gate Leakage Current Vds = 0V, Vgs = -4.5V A -30 -0.8 -- NF Noise Figure [1] f = 2 GHz f = 900 MHz dB dB -- -- 1 -- -- -- G Gain[1] f = 2 GHz f = 900 MHz dB dB 13.5 -- 15 16.6 16.5 -- OIP3 Output 3rd Order Intercept Point [1,2] f = 2 GHz f = 900 MHz dBm dBm 43 -- 45.5 42 -- -- P1dB Output 1dB Compressed [1] f = 2 GHz f = 900 MHz dBm dBm 27.5 -- 29 27.3 -- -- PAE Power Added Efficiency[1] f = 2 GHz f = 900 MHz % % 50 -- 65 49 -- -- ACLR Adjacent Channel Leakage Power Ratio [1,3] Offset BW = 5 MHz Offset BW = 10 MHz dBc dBc -- -- 63.9 64.1 -- -- Notes: 1. Measurements at 2 GHz obtained using production test board described in Figure 2 while measurement at 0.9GHz obtained from load pull tuner. 2. i ) 2 GHz OIP3 test condition: F1 = 2.0 GHz, F2 = 2.01 GHz and Pin = -5 dBm per tone. ii ) 900 MHz OIP3 test condition: F1 = 900 MHz, F2 = 910 MHz and Pin = -5dBm per tone. 3. ACLR test spec is based on 3GPP TS 25.141 V5.3.1 (2002-06) - Test Model 1 - Active Channels: PCCPCH + SCH + CPICH + PICH + SCCPCH + 64 DPCH (SF=128) - Freq = 2140 MHz - Pin = -5 dBm - Channel Integrate Bandwidth = 3.84 MHz 4. Use proper bias, board, heatsinking and derating designs to ensure max channel temperature is not exceeded. See absolute max ratings and application note for more details. Input 50 Ohm Transmission Line and Drain Bias T (0.3 dB loss) Input Matching Circuit _mag=0.79 _ang=-164 (1.1 dB loss) DUT Output Matching Circuit _mag=0.69 _ang=-163 (0.9 dB loss) 50 Ohm Transmission Line and Drain Bias T (0.3 dB loss) Output Figure 6. Block diagram of the 2 GHz production test board used for NF, Gain, OIP3 , P1dB and PAE measurements at 2 GHz. This circuit achieves a trade-off between optimal OIP3, P1dB and VSWR. Circuit losses have been de-embedded from actual measurements. 3 3.3 nH 1.8 nH 50 Ohm .02 1.2 pF 110 Ohm .03 110 Ohm .03 50 Ohm .02 1.2 pF DUT RF Input RF Output 15 nH 47 nH 2.2 F 15 Ohm 2.2 F Gate Supply Drain Supply Figure 3. Simplified schematic of production test board. Primary purpose is to show 15 Ohm series resistor placement in gate supply. Transmission line tapers, tee intersections, bias lines and parasitic values are not shown. Gamma Load and Source at Optimum OIP3 and P1dB Tuning Conditions The device's optimum OIP3 and P1dB measurements were determined using a load pull system at 4.5V, 400 mA quiesent bias: Typical Gammas at Optimum OIP3 Freq (GHz) OIP3 Gain Optimized for maximum OIP3 P1dB PAE Gamma Source 0.9 49.15 16.85 27.86 44.20 0.5852<-135.80 0.4785<177.00 2.0 48.18 14.72 29.36 48.89 0.7267<-175.37 0.7338<179.56 2.4 47.54 12.47 29.10 46.83 0.6155<-171.71 0.5411<-172.02 3.9 45.44 8.05 28.49 37.02 0.7888<-148.43 0.5247<-145.84 Gamma Load Typical Gammas at Optimum P1dB Freq (GHz) OIP3 Gain Optimized for maximum P1dB P1dB PAE Gamma Source Gamma Load 0.9 41.78 21.84 31.23 49.97 0.7765<168.50 0.7589<-175.09 2.0 43.28 14.83 31.03 44.78 0.8172<-175.74 0.8011<-165.75 2.4 43.46 11.90 30.66 41.00 0.8149<-163.78 0.8042<-161.79 3.9 42.94 7.70 29.56 33.06 0.8394<-151.21 0.7826<-149.00 4 ATF-501P8 Typical Performance Curves (at 25C unless specified otherwise) Tuned for Optimal OIP3 at 4.5V 280 mA 55 25 4.5V 5.5V 3.5V 50 35 20 10 35 5 30 0 4.5V 5.5V 3.5V 25 4.5V 5.5V 3.5V 20 15 200 240 280 320 360 400 440 480 520 560 600 640 200 240 280 320 360 400 440 480 520 560 600 640 200 240 280 320 360 400 440 480 520 560 600 640 Ids (mA) Ids (mA) Ids (mA) 60 50 40 PAE (%) 15 40 Figure 8. OIP3 vs. Ids and Vds at 2 GHz. 30 20 4.5V 5.5V 3.5V 10 0 200 240 280 320 360 400 440 480 520 560 600 640 Ids (mA) Figure 11. PAE vs. Ids and Vds at 2 GHz. 5 P1dB (dBm) 45 GAIN OIP3 (dBm) 30 Figure 9. Gain vs. Ids and Vds at 2 GHz. Figure 10. P1dB vs. Ids and Vds at 2 GHz. ATF-501P8 Typical Performance Curves (at 25C unless specified otherwise) Tuned for Optimal OIP3 at 4.5V 400 mA 55 4.5V 5.5V 3.5V 50 45 40 40 35 30 30 25 4.5V 5.5V 3.5V 4.5V 5.5V 3.5V 20 15 200 240 280 320 360 400 440 480 520 560 600 640 200 240 280 320 360 400 440 480 520 560 600 640 200 240 280 320 360 400 440 480 520 560 600 640 Ids (mA) Ids (mA) Ids (mA) Figure 13. OIP3 vs. Ids and Vds at 900 MHz. GAIN 30 25 Figure 14. P1dB vs. Ids and Vds at 2 GHz. 25 25 20 20 15 15 GAIN 35 10 4.5V 5.5V 3.5V 20 5 15 5 0 0 200 240 280 320 360 400 440 480 520 560 600 640 200 240 280 320 360 400 440 480 520 560 600 640 Ids (mA) Ids (mA) Ids (mA) Figure 16. Gain vs. Ids and Vds at 2 GHz. 60 50 50 40 40 PAE (%) 60 30 10 4.5V 5.5V 3.5V 200 240 280 320 360 400 440 480 520 560 600 640 Figure 15. P1dB vs. Ids and Vds at 900 MHz. 20 10 4.5V 5.5V 3.5V 50 40 30 20 4.5V 5.5V 3.5V 10 4.5V 5.5V 3.5V 200 240 280 320 360 400 440 480 520 560 600 640 Ids (mA) Ids (mA) Note: Bias current (Ids) for the above charts are quiescent conditions. Actual level may increase or decrease depending on amount of RF drive. 20 -40C 25C 85C 0 200 240 280 320 360 400 440 480 520 560 600 640 Figure 18. PAE vs. Ids and Vds at 2 GHz. 30 10 0 0 Figure 17. Gain vs. Ids and Vds at 900 MHz. OIP3 (dBm) P1dB (dBm) 45 35 Figure 12. OIP3 vs. Ids and Vds at 2 GHz. PAE (%) P1dB (dBm) 30 OIP3 (dBm) OIP3 (dBm) 50 6 35 55 Figure 19. PAE vs. Ids and Vds at 900 MHz. 0.5 1 1.5 2 2.5 3 3.5 FREQUENCY (GHz) Figure 20. OIP3 vs. Temperature and Frequency at optimum OIP3. 4 ATF-501P8 Typical Performance Curves, continued (at 25C unless specified otherwise) Tuned for Optimal OIP3 at 4.5V, 400 mA 50 35 35 30 30 30 20 -40C 25C 85C P1dB (dBm) P1dB (dBm) OIP3 (dBm) 40 25 -40C 25C 85C 20 25 20 10 0 0.5 1 1.5 2 2.5 3 3.5 15 0.5 4 1 FREQUENCY (GHz) 2.5 3 3.5 15 0.5 4 10 -40C 25C 85C 25 100 20 80 15 60 10 1.5 2 2.5 3 3.5 0 0.5 4 FREQUENCY (GHz) 2.5 3 3.5 0 0.5 4 60 20 1 1.5 2 2.5 3 3.5 4 FREQUENCY (GHz) Figure 27. PAE vs. Temperature and Frequency at optimum P1dB. Note: Bias current (Ids) for the above charts are quiescent conditions. Actual level may increase or decrease depending on amount of RF drive. 3 3.5 4 -40C 25C 85C 1 1.5 2 2.5 3 3.5 4 FREQUENCY (GHz) Figure 26. PAE vs. Temperature and Frequency at optimum OIP3. 55 4.5V 5.5V 3.5V 45 40 45 40 35 35 30 30 200 240 280 320 360 400 440 480 520 560 600 640 Ids (mA) Figure 28. OIP3 vs. Ids and Vds at 2 GHz. 4.5V 5.5V 3.5V 50 OIP3 (dBm) OIP3 (dBm) PAE (%) 2 50 40 7 1.5 55 -40C 25C 85C 80 0 0.5 1 Figure 25. Gain vs. Temperature and Frequency at optimum P1dB. 100 2.5 20 FREQUENCY (GHz) Figure 24. Gain vs. Temperature and Frequency at optimum OIP3. 2 40 -40C 25C 85C 5 1 1.5 Figure 23. P1dB vs. Temperature and Frequency at optimum P1dB. PAE (%) GAIN (dB) 15 0 0.5 1 FREQUENCY (GHz) Figure 22. P1dB vs. Temperature and Frequency at optimum OIP3. 20 GAIN (dB) 2 FREQUENCY (GHz) Figure 21. OIP3 vs. Temperature and Frequency at optimum P1dB. 5 1.5 -40C 25C 85C 200 240 280 320 360 400 440 480 520 560 600 640 Ids (mA) Figure 29. OIP3 vs. Ids and Vds at 900 MHz. 35 30 30 25 4.5V 5.5V 3.5V 25 20 GAIN 35 P1dB (dBm) P1dB (dBm) ATF-501P8 Typical Performance Curves, continued (at 25C unless specified otherwise) Tuned for Optimal P1dB at 4.5V, 400 mA 25 4.5V 5.5V 3.5V 15 10 20 20 4.5V 5.5V 3.5V 5 15 15 0 200 240 280 320 360 400 440 480 520 560 600 640 200 240 280 320 360 400 440 480 520 560 600 640 200 240 280 320 360 400 440 480 520 560 600 640 Ids (mA) Ids (mA) Ids (mA) Figure 30. P1dB vs. Ids and Vds at 2 GHz. Figure 31. P1dB vs. Ids and Vds at 900 MHz. 30 Figure 32. Gain vs. Ids and Vds at 2 GHz. 80 60 50 25 60 15 4.5V 5.5V 3.5V 10 5 30 20 10 4.5V 5.5V 3.5V 4.5V 5.5V 3.5V 0 0 200 240 280 320 360 400 440 480 520 560 600 640 Ids (mA) Ids (mA) Note: Bias current for the above charts are quiescent conditions. Actual level may increase or decrease depending on amount of RF drive. 40 20 200 240 280 320 360 400 440 480 520 560 600 640 Figure 33. Gain vs. Ids and Vds at 900 MHz. 8 PAE (%) 20 PAE (%) GAIN 40 Figure 34. PAE vs. Ids and Vds at 2 GHz. 200 240 280 320 360 400 440 480 520 560 600 640 Ids (mA) Figure 35. PAE vs. Ids and Vds at 900 MHz. ATF-501P8 Typical Scattering Parameters, VDS = 4.5V, IDS = 280 mA Freq. GHz S11 Mag. Ang. dB S21 Mag. Ang. dB S12 Mag. Ang. S22 Mag. Ang. MSG/MAG K dB factor 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.5 2 2.5 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 0.915 0.911 0.910 0.910 0.908 0.907 0.908 0.905 0.909 0.909 0.902 0.902 0.901 0.901 0.898 0.902 0.893 0.899 0.895 0.898 0.886 0.868 0.862 0.847 0.844 0.837 0.824 0.821 0.805 31.6 26.2 22.8 20.3 18.7 17.1 15.8 14.7 13.6 12.7 9.1 7.1 6.6 5.0 3.0 0.9 -0.9 -3.3 -4.4 -5.3 -5.9 -6.6 -8.0 -7.9 -8.5 -9.0 -9.7 -9.8 -10.5 37.990 20.324 13.783 10.342 8.604 7.194 6.167 5.407 4.799 4.308 2.859 2.264 2.134 1.772 1.412 1.110 0.902 0.687 0.604 0.542 0.505 0.469 0.398 0.403 0.377 0.354 0.327 0.323 0.298 112.2 99.9 94.5 91.1 88.4 86.1 84.1 82.1 80.3 78.3 70.3 64.4 63.1 57.7 49.3 37.6 22.6 9.0 -1.1 -13.0 -20.2 -29.7 -40.8 -47.5 -58.4 -67.2 -72.0 -82.7 -90.1 -38.4 -37.7 -37.1 -37.1 -36.5 -35.9 -35.4 -34.9 -34.4 -34.0 -31.7 -30.5 -30.2 -28.9 -27.3 -24.7 -22.9 -22.2 -20.8 -19.6 -18.9 -17.6 -17.4 -16.0 -15.3 -14.6 -14.2 -13.4 -12.5 0.012 0.013 0.014 0.014 0.015 0.016 0.017 0.018 0.019 0.020 0.026 0.030 0.031 0.036 0.043 0.058 0.072 0.078 0.091 0.105 0.114 0.132 0.135 0.159 0.171 0.187 0.194 0.215 0.237 29.3 24.0 24.5 27.3 29.6 32.4 34.4 36.3 38.3 39.9 45.0 46.9 47.2 47.4 46.5 43.5 35.6 27.3 22.0 12.3 9.7 0.5 -6.3 -12.3 -21.3 -30.1 -36.8 -44.6 -51.8 0.647 0.689 0.699 0.702 0.691 0.691 0.694 0.695 0.692 0.692 0.698 0.700 0.699 0.697 0.707 0.699 0.697 0.652 0.646 0.641 0.695 0.742 0.735 0.766 0.800 0.797 0.763 0.786 0.781 35.0 31.9 29.9 28.7 27.6 26.5 25.6 24.8 24.0 23.3 18.2 16.0 15.4 13.8 11.7 9.7 7.8 5.7 4.2 3.2 2.5 1.6 -0.1 -0.1 -0.3 -1.1 -2.3 -2.4 -3.5 -132.3 -156.2 -165.4 -170.9 -173.4 -176.1 -178.5 179.8 178.2 176.6 170.5 166.0 165.0 161.1 155.0 145.0 134.9 125.8 115.6 105.5 95.5 84.7 74.0 64.5 55.6 47.4 39.9 31.6 24.6 Notes: 1. S parameter is measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. MSG/MAG & |S21|2 (dB) 40 S21 MSG MAG 30 20 10 0 -10 -20 0 2 4 6 8 10 12 14 16 18 FREQUENCY (GHz) Figure 36. MSG/MAG & |S21|2 vs. Frequency at 4.5V 280mA. 9 -160.6 -171.1 -175.7 -178.5 -179.9 178.5 177.2 175.2 175.1 173.9 169.4 165.6 163.0 159.1 153.7 146.8 145.3 134.1 117.4 115.5 104.5 91.3 88.1 78.4 68.9 65.6 51.5 38.9 29.5 0.173 0.314 0.436 0.569 0.648 0.736 0.800 0.871 0.906 0.953 1.128 1.209 1.241 1.278 1.326 1.272 1.286 1.394 1.463 1.447 1.455 1.431 1.661 1.491 1.397 1.414 1.608 1.488 1.575 ATF-501P8 Typical Scattering Parameters, VDS = 4.5V, IDS = 200 mA Freq. GHz S11 Mag. Ang. dB S21 Mag. Ang. dB S12 Mag. Ang. S22 Mag. Ang. MSG/MAG K dB factor 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.5 2 2.5 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 0.922 0.914 0.914 0.911 0.911 0.912 0.910 0.910 0.913 0.910 0.904 0.905 0.905 0.906 0.905 0.904 0.899 0.905 0.902 0.900 0.894 0.882 0.873 0.856 0.853 0.837 0.829 0.828 0.807 31.1 25.7 22.3 19.8 18.3 16.7 15.4 14.2 13.2 12.2 8.7 6.7 6.1 4.5 2.6 0.4 -1.3 -3.6 -4.6 -5.6 -6.1 -7.0 -8.1 -8.1 -8.4 -8.8 -9.2 -9.5 -10.2 35.978 19.290 13.088 9.814 8.176 6.834 5.861 5.141 4.558 4.092 2.718 2.153 2.027 1.684 1.354 1.053 0.863 0.661 0.587 0.527 0.498 0.448 0.393 0.393 0.380 0.361 0.345 0.336 0.310 112.6 100.1 94.7 91.4 88.6 86.4 84.3 82.3 80.5 78.7 70.5 64.9 63.7 58.3 50.3 38.5 23.9 10.5 0.3 -11.1 -17.7 -26.8 -38.8 -45.4 -55.0 -64.1 -72.0 -80.5 -88.2 -37.7 -36.5 -36.5 -35.9 -35.4 -34.9 -34.4 -34.4 -34.0 -33.6 -31.4 -30.2 -29.9 -28.6 -27.1 -24.7 -22.9 -22.2 -20.8 -19.6 -18.9 -17.7 -17.5 -16.1 -15.6 -14.8 -14.4 -13.4 -12.5 0.013 0.015 0.015 0.016 0.017 0.018 0.019 0.019 0.020 0.021 0.027 0.031 0.032 0.037 0.044 0.058 0.072 0.078 0.091 0.105 0.114 0.130 0.133 0.156 0.166 0.182 0.190 0.213 0.236 28.9 22.4 22.5 24.9 26.8 29.3 31.3 33.0 34.9 36.6 41.7 44.2 44.5 44.9 44.3 41.6 34.1 26.0 20.8 11.1 8.4 -0.9 -7.5 -13.1 -21.4 -29.6 -35.9 -43.3 -50.5 0.664 0.709 0.719 0.722 0.713 0.713 0.716 0.718 0.712 0.714 0.721 0.721 0.719 0.715 0.725 0.716 0.712 0.660 0.654 0.649 0.700 0.746 0.738 0.768 0.800 0.799 0.763 0.787 0.782 34.4 31.1 29.4 27.9 26.8 25.8 24.9 24.3 23.6 22.9 18.3 16.0 15.4 13.7 11.8 9.5 7.7 5.6 4.2 3.0 2.6 1.6 0.1 -0.1 -0.2 -1.0 -1.8 -2.0 -3.2 -131.5 -155.7 -165.2 -170.5 -173.3 -176.0 -178.3 179.9 178.4 176.8 170.5 166.1 165.2 161.1 154.9 145.1 134.9 126.0 115.8 106.4 95.9 84.9 74.3 64.6 56.0 47.4 40.6 32.7 26.1 MSG/MAG & |S21|2 (dB) 40 Notes: 1. S parameter is measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. S21 MSG MAG 30 20 10 0 -10 -20 0 2 4 6 8 10 12 14 16 18 FREQUENCY (GHz) Figure 37. MSG/MAG & |S21|2 vs. Frequency at 4.5V 200mA. 10 -159.8 -170.7 -175.4 -178.4 -179.9 178.6 177.2 175.5 175.0 173.8 169.0 165.2 162.5 158.5 152.9 145.7 144.1 132.9 116.3 114.4 103.4 90.5 87.3 77.8 68.4 65.2 51.1 38.5 29.1 0.142 0.274 0.390 0.510 0.577 0.653 0.725 0.801 0.840 0.903 1.077 1.161 1.188 1.227 1.262 1.271 1.263 1.371 1.423 1.451 1.412 1.407 1.614 1.492 1.399 1.439 1.556 1.449 1.542 ATF-501P8 Typical Scattering Parameters, VDS = 4.5V, IDS = 360 mA Freq. GHz S11 Mag. Ang. dB S21 Mag. Ang. dB S12 Mag. Ang. S22 Mag. Ang. MSG/MAG K dB factor 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.5 2 2.5 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 0.911 0.910 0.911 0.913 0.907 0.910 0.910 0.906 0.913 0.907 0.904 0.906 0.904 0.907 0.906 0.903 0.896 0.903 0.903 0.891 0.885 0.873 0.866 0.849 0.849 0.841 0.828 0.817 0.809 31.6 26.2 22.8 20.3 18.7 17.2 15.8 14.7 13.7 12.7 9.2 7.1 6.6 5.0 3.1 0.9 -0.8 -3.2 -4.3 -5.3 -6.0 -6.7 -7.9 -7.8 -8.4 -9.0 -9.4 -9.8 -10.3 38.110 20.415 13.848 10.397 8.640 7.232 6.200 5.431 4.826 4.328 2.878 2.275 2.146 1.783 1.424 1.114 0.907 0.691 0.612 0.544 0.504 0.465 0.403 0.406 0.379 0.353 0.337 0.322 0.304 112.4 100.0 94.6 91.3 88.5 86.2 84.2 82.2 80.3 78.4 70.4 64.5 63.2 57.9 49.4 37.7 22.7 8.9 -1.0 -13.3 -20.0 -28.4 -41.1 -47.3 -57.9 -69.0 -73.1 -83.0 -92.7 -39.2 -38.4 -37.7 -37.7 -36.5 -35.9 -35.9 -35.4 -34.9 -34.0 -32.0 -30.5 -30.2 -28.9 -27.3 -24.7 -22.7 -22.2 -20.7 -19.5 -18.8 -17.5 -17.3 -15.9 -15.2 -14.5 -14.2 -13.2 -12.4 0.011 0.012 0.013 0.013 0.015 0.016 0.016 0.017 0.018 0.020 0.025 0.030 0.031 0.036 0.043 0.058 0.073 0.078 0.092 0.106 0.115 0.133 0.137 0.161 0.174 0.189 0.196 0.218 0.240 30.3 24.9 26.2 28.9 31.8 34.5 36.8 38.8 40.6 42.3 47.0 48.7 49.0 49.0 47.7 44.2 36.2 27.9 22.4 12.8 10.2 0.9 -5.8 -12.1 -21.3 -30.3 -37.1 -45.1 -52.4 0.649 0.692 0.701 0.704 0.693 0.694 0.696 0.697 0.695 0.694 0.698 0.702 0.701 0.699 0.708 0.701 0.699 0.654 0.647 0.642 0.697 0.743 0.735 0.768 0.801 0.800 0.763 0.787 0.783 35.4 32.3 30.3 29.0 27.6 26.6 25.9 25.0 24.3 23.4 18.2 16.1 15.5 14.0 12.0 9.7 7.9 5.9 4.6 2.9 2.4 1.6 0.1 0.0 -0.2 -0.9 -2.0 -2.4 -3.2 -132.8 -156.5 -165.8 -171.1 -173.7 -176.3 -178.6 179.7 178.0 176.4 170.3 165.9 164.8 160.9 154.7 144.8 134.7 125.6 115.0 105.6 94.9 84.3 74.0 64.3 55.7 46.6 39.0 31.0 23.9 MSG/MAG & |S21|2 (dB) 40 Notes: 1. S parameter is measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. S21 MSG MAG 30 20 10 0 -10 -20 0 2 4 6 8 10 12 14 16 18 FREQUENCY (GHz) Figure 38. MSG/MAG & |S21|2 vs. Frequency at 4.5V 360mA. 11 -162.1 -171.8 -176.2 -178.9 179.7 178.2 176.9 175.6 174.8 173.7 169.4 165.5 162.8 159.0 153.6 146.7 145.1 134.0 117.3 115.4 104.4 91.3 87.9 78.3 68.8 65.5 51.4 38.7 29.3 0.200 0.340 0.472 0.600 0.679 0.747 0.838 0.914 0.930 0.984 1.154 1.193 1.231 1.246 1.275 1.268 1.256 1.355 1.375 1.495 1.462 1.416 1.607 1.464 1.361 1.376 1.547 1.491 1.513 ATF-501P8 Typical Scattering Parameters, VDS = 3.5V, IDS = 280 mA Freq. GHz S11 Mag. Ang. dB S21 Mag. Ang. dB S12 Mag. Ang. S22 Mag. Ang. MSG/MAG K dB factor 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.5 2 2.5 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 0.923 0.922 0.920 0.920 0.915 0.917 0.917 0.915 0.918 0.913 0.913 0.913 0.910 0.913 0.906 0.910 0.903 0.907 0.903 0.897 0.889 0.880 0.870 0.847 0.839 0.816 0.808 0.794 0.769 30.6 25.2 21.8 19.3 17.7 16.2 14.8 13.6 12.7 11.7 8.1 6.1 5.6 4.0 2.1 0.1 -1.6 -3.9 -4.9 -5.6 -6.0 -6.4 -7.7 -7.5 -8.0 -8.2 -9.2 -9.0 -9.7 34.047 18.161 12.313 9.220 7.674 6.429 5.511 4.813 4.302 3.850 2.555 2.025 1.912 1.588 1.276 1.012 0.827 0.636 0.570 0.522 0.499 0.477 0.411 0.421 0.397 0.390 0.345 0.354 0.329 111.6 99.7 94.5 91.4 88.7 86.6 84.6 82.8 81.0 79.1 72.0 66.3 65.1 60.4 52.2 41.6 27.2 14.0 5.1 -7.0 -14.5 -23.6 -33.8 -41.1 -52.2 -63.9 -70.3 -81.5 -91.7 -38.4 -37.7 -37.1 -37.1 -35.9 -35.4 -34.9 -34.9 -34.4 -33.6 -31.4 -30.2 -29.9 -28.6 -26.9 -24.4 -22.5 -22.0 -20.6 -19.4 -18.8 -17.7 -17.6 -16.3 -15.8 -15.0 -14.6 -13.5 -12.6 0.012 0.013 0.014 0.014 0.016 0.017 0.018 0.018 0.019 0.021 0.027 0.031 0.032 0.037 0.045 0.060 0.075 0.079 0.093 0.107 0.115 0.131 0.132 0.153 0.163 0.178 0.186 0.211 0.234 28.8 23.8 25.0 27.5 30.0 32.9 34.8 37.2 38.8 40.5 45.6 47.1 47.6 47.5 45.9 42.4 34.3 25.3 19.8 9.9 7.0 -2.4 -9.1 -14.5 -22.5 -30.0 -35.9 -43.3 -50.7 0.716 0.759 0.767 0.770 0.760 0.761 0.762 0.760 0.764 0.759 0.759 0.763 0.762 0.758 0.762 0.754 0.742 0.674 0.669 0.666 0.709 0.754 0.745 0.770 0.801 0.795 0.755 0.787 0.777 34.5 31.5 29.4 28.2 26.8 25.8 24.9 24.3 23.5 22.6 18.1 15.9 15.2 13.6 11.5 9.4 7.5 5.3 3.9 2.8 2.4 1.9 0.3 0.1 -0.1 -0.8 -2.3 -2.1 -3.2 -133.9 -157.1 -166.1 -171.3 -173.9 -176.5 -178.9 179.6 177.7 176.4 170.4 166.1 164.8 160.9 154.6 144.7 134.6 125.4 115.2 105.5 94.8 84.2 73.4 63.8 55.1 47.3 39.8 32.3 26.0 Notes: 1. S parameter is measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. MSG/MAG & |S21|2 (dB) 40 S21 MSG MAG 30 20 10 0 -10 -20 0 2 4 6 8 10 12 14 16 18 FREQUENCY (GHz) Figure 39. MSG/MAG & |S21|2 vs. Frequency at 3.5V 280mA. 12 -164.7 -173.4 -177.3 -179.8 178.8 177.2 175.8 175.0 173.7 172.4 168.1 163.9 161.0 156.7 150.9 143.3 141.3 130.1 113.5 112.0 100.9 88.2 85.0 75.9 66.5 63.4 49.5 36.6 27.7 0.166 0.301 0.427 0.549 0.622 0.697 0.761 0.843 0.877 0.930 1.070 1.139 1.181 1.206 1.261 1.226 1.239 1.402 1.448 1.484 1.458 1.378 1.614 1.519 1.458 1.495 1.727 1.538 1.632 ATF-501P8 Typical Scattering Parameters, VDS = 3.5V, IDS = 200 mA Freq. GHz S11 Mag. Ang. dB S21 Mag. Ang. dB S12 Mag. Ang. S22 Mag. Ang. MSG/MAG K dB factor 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.5 1.9 2 2.4 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 0.924 0.919 0.918 0.918 0.918 0.915 0.915 0.914 0.919 0.916 0.912 0.911 0.910 0.911 0.909 0.911 0.902 0.904 0.904 0.901 0.897 0.880 0.872 0.849 0.841 0.820 0.809 0.794 0.770 0.766 30.5 25.0 21.7 19.2 17.6 16.0 14.7 13.5 12.5 11.6 8.0 6.0 5.5 3.9 2.0 -0.1 -1.8 -4.1 -5.1 -5.9 -6.4 -6.9 -8.1 -7.8 -8.2 -8.5 -9.0 -9.1 -9.6 -9.2 33.400 17.862 12.118 9.080 7.556 6.328 5.422 4.739 4.232 3.788 2.515 1.991 1.882 1.562 1.255 0.988 0.813 0.624 0.555 0.509 0.477 0.450 0.393 0.408 0.391 0.377 0.354 0.350 0.332 0.346 112.1 99.9 94.6 91.4 88.7 86.5 84.5 82.7 80.8 79.0 71.5 65.8 64.7 59.7 51.5 40.4 25.9 12.7 3.9 -8.3 -14.5 -23.9 -34.0 -42.5 -53.2 -63.5 -69.5 -84.1 -89.0 -99.8 -37.1 -36.5 -36.5 -35.9 -35.4 -34.9 -34.4 -34.0 -33.6 -33.2 -31.4 -29.9 -29.6 -28.6 -26.9 -24.4 -22.6 -22.0 -20.6 -19.4 -18.8 -17.7 -17.6 -16.4 -15.8 -15.1 -14.7 -13.6 -12.6 -11.5 0.014 0.015 0.015 0.016 0.017 0.018 0.019 0.020 0.021 0.022 0.027 0.032 0.033 0.037 0.045 0.060 0.074 0.079 0.093 0.107 0.115 0.130 0.132 0.152 0.162 0.176 0.185 0.210 0.234 0.266 28.4 22.1 22.7 24.6 26.4 29.3 31.3 33.2 35.1 36.7 42.0 44.3 44.7 45.0 43.9 41.0 33.3 24.6 19.3 9.5 6.6 -3.0 -9.7 -14.9 -22.8 -29.9 -35.9 -43.1 -50.5 -60.7 0.703 0.749 0.757 0.760 0.751 0.752 0.753 0.752 0.755 0.750 0.750 0.755 0.753 0.750 0.754 0.746 0.735 0.669 0.664 0.662 0.705 0.751 0.742 0.767 0.798 0.793 0.754 0.785 0.776 0.797 33.8 30.8 29.1 27.5 26.5 25.5 24.6 23.7 23.0 22.4 18.2 15.8 15.2 13.5 11.5 9.3 7.4 5.0 3.8 2.7 2.3 1.5 0.0 0.0 -0.2 -1.0 -2.1 -2.1 -3.1 -2.6 -132.7 -156.5 -165.7 -171.0 -173.6 -176.2 -178.5 179.8 178.0 176.7 170.5 166.0 164.9 160.9 154.7 144.8 134.8 125.5 115.6 105.6 95.4 84.1 73.7 64.2 55.5 47.1 39.3 32.7 25.8 21.5 MSG/MAG & |S21|2 (dB) 40 Notes: 1. S parameter is measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. S21 MSG MAG 30 20 10 0 -10 -20 0 2 4 6 8 10 12 14 16 18 FREQUENCY (GHz) Figure 40. MSG/MAG & |S21|2 vs. Frequency at 3.5V 200mA. 13 -162.3 -172.1 -176.5 -179.2 179.4 177.7 176.3 175.3 174.1 172.8 168.3 165.0 164.2 161.3 157.0 151.3 143.7 141.8 130.6 113.9 112.3 101.2 88.5 85.3 76.2 66.8 63.6 49.8 36.9 28.0 0.150 0.269 0.390 0.496 0.559 0.651 0.717 0.777 0.806 0.870 1.057 1.126 1.157 1.215 1.244 1.225 1.255 1.438 1.455 1.466 1.437 1.429 1.646 1.539 1.465 1.527 1.708 1.543 1.634 1.394 ATF-501P8 Typical Scattering Parameters, VDS = 3.5V, IDS = 360 mA Freq. GHz S11 Mag. Ang. dB S21 Mag. Ang. dB S12 Mag. Ang. S22 Mag. Ang. MSG/MAG K dB factor 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.5 2 2.5 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 0.919 0.920 0.921 0.918 0.915 0.916 0.916 0.914 0.919 0.914 0.912 0.914 0.910 0.912 0.913 0.908 0.903 0.906 0.904 0.902 0.893 0.881 0.873 0.847 0.844 0.827 0.818 0.799 0.780 30.8 25.3 21.9 19.4 17.8 16.3 15.0 13.8 12.8 11.8 8.3 6.3 5.8 4.2 2.3 0.2 -1.5 -3.8 -4.7 -5.5 -5.8 -6.5 -7.6 -7.5 -7.8 -8.2 -8.9 -9.0 -9.3 34.576 18.445 12.499 9.372 7.792 6.537 5.596 4.888 4.370 3.911 2.596 2.059 1.940 1.618 1.296 1.023 0.844 0.647 0.582 0.532 0.513 0.474 0.417 0.424 0.407 0.389 0.357 0.353 0.344 111.7 99.7 94.6 91.5 88.8 86.6 84.7 83.1 81.1 79.3 72.2 66.7 65.6 60.7 52.9 42.0 27.9 15.0 5.9 -6.4 -13.3 -22.0 -32.9 -40.6 -52.7 -63.7 -67.9 -81.4 -90.7 -39.2 -38.4 -37.7 -37.7 -36.5 -35.9 -35.4 -34.9 -34.4 -34.0 -31.7 -30.2 -29.9 -28.6 -26.9 -24.4 -22.5 -21.9 -20.6 -19.4 -18.8 -17.7 -17.5 -16.2 -15.7 -14.9 -14.6 -13.5 -12.5 0.011 0.012 0.013 0.013 0.015 0.016 0.017 0.018 0.019 0.020 0.026 0.031 0.032 0.037 0.045 0.060 0.075 0.080 0.093 0.107 0.115 0.131 0.133 0.154 0.165 0.180 0.187 0.211 0.236 29.6 25.5 26.7 30.0 32.7 35.7 37.9 40.0 41.8 43.0 47.8 49.2 49.3 49.0 47.3 43.2 34.8 25.7 20.3 10.3 7.5 -1.9 -8.5 -13.9 -22.0 -29.7 -35.8 -43.1 -50.4 0.722 0.763 0.771 0.773 0.763 0.765 0.765 0.764 0.768 0.762 0.761 0.766 0.765 0.761 0.765 0.756 0.745 0.676 0.670 0.666 0.710 0.756 0.746 0.772 0.802 0.793 0.759 0.786 0.777 35.0 31.9 29.8 28.6 27.2 26.1 25.2 24.3 23.6 22.9 18.0 15.9 15.2 13.6 11.8 9.4 7.6 5.3 4.1 3.1 2.7 1.9 0.5 0.2 0.1 -0.7 -1.9 -2.0 -2.7 -134.2 -157.3 -166.4 -171.4 -174.0 -176.7 -178.9 179.4 178.1 176.2 170.2 165.8 164.7 160.8 154.4 144.7 134.5 125.5 115.1 105.3 95.0 84.1 73.6 63.9 55.4 47.4 40.2 32.9 26.7 MSG/MAG & |S21|2 (dB) 40 Notes: 1. S parameter is measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. S21 MSG MAG 30 20 10 0 -10 -20 0 2 4 6 8 10 12 14 FREQUENCY (GHz) Figure 41. MSG/MAG & |S21|2 vs. Frequency at 3.5V 360mA. 14 16 18 -166.1 -174.1 -177.8 179.8 178.6 176.9 175.6 174.9 173.4 172.2 168.1 163.8 160.9 156.6 150.8 143.0 141.1 129.9 113.3 111.6 100.7 88.2 84.9 75.7 66.3 63.2 49.4 36.5 27.6 0.191 0.336 0.460 0.599 0.665 0.744 0.809 0.871 0.892 0.963 1.103 1.142 1.185 1.210 1.221 1.236 1.233 1.392 1.430 1.433 1.416 1.388 1.577 1.507 1.407 1.457 1.637 1.526 1.549 ATF-501P8 Typical Scattering Parameters, VDS = 5.5V, IDS = 280 mA Freq. GHz S11 Mag. Ang. dB S21 Mag. Ang. dB S12 Mag. Ang. S22 Mag. Ang. MSG/MAG K dB factor 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.5 2 2.5 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 0.914 0.912 0.914 0.913 0.909 0.910 0.911 0.908 0.913 0.907 0.903 0.905 0.903 0.903 0.900 0.902 0.895 0.903 0.898 0.898 0.884 0.871 0.864 0.849 0.854 0.841 0.834 0.824 0.813 31.8 26.4 23.1 20.6 19.0 17.4 16.1 14.9 13.9 13.0 9.4 7.4 6.8 5.2 3.3 1.1 -0.8 -3.2 -4.2 -5.3 -6.0 -6.8 -8.3 -8.3 -8.7 -9.6 -10.0 -10.2 -10.7 39.087 20.961 14.228 10.678 8.871 7.417 6.365 5.577 4.956 4.446 2.951 2.331 2.197 1.822 1.455 1.129 0.916 0.695 0.616 0.546 0.499 0.458 0.386 0.385 0.366 0.330 0.317 0.310 0.291 112.6 100.1 94.5 91.1 88.3 86.0 83.9 81.8 79.9 78.0 69.6 63.5 62.1 56.7 47.9 35.9 20.6 6.8 -3.5 -16.3 -23.2 -31.5 -43.6 -49.9 -60.4 -68.9 -73.5 -83.2 -88.9 -38.4 -37.7 -37.1 -37.1 -36.5 -35.9 -35.4 -34.9 -34.4 -34.0 -32.0 -30.5 -30.2 -29.1 -27.3 -24.9 -23.0 -22.3 -20.8 -19.6 -18.9 -17.6 -17.3 -15.8 -15.2 -14.4 -14.1 -13.2 -12.4 0.012 0.013 0.014 0.014 0.015 0.016 0.017 0.018 0.019 0.020 0.025 0.030 0.031 0.035 0.043 0.057 0.071 0.077 0.091 0.105 0.114 0.132 0.137 0.162 0.174 0.191 0.198 0.219 0.240 29.6 23.9 24.1 26.7 29.0 31.7 34.3 36.0 38.0 39.4 44.5 46.4 47.0 47.3 46.7 43.8 36.2 28.3 22.9 13.3 10.9 1.6 -5.2 -11.5 -20.9 -29.9 -37.0 -45.0 -52.2 0.618 0.661 0.670 0.674 0.662 0.663 0.666 0.667 0.664 0.664 0.672 0.674 0.674 0.672 0.685 0.679 0.681 0.648 0.641 0.636 0.694 0.741 0.731 0.768 0.804 0.807 0.768 0.792 0.788 35.1 32.1 30.1 28.8 27.7 26.7 25.7 24.9 24.2 23.5 18.4 16.3 15.7 14.0 12.0 9.8 8.0 6.1 4.5 3.3 2.4 1.6 -0.2 -0.3 -0.2 -1.3 -2.3 -2.5 -3.5 -131.5 -155.7 -165.2 -170.5 -173.3 -176.0 -178.2 -179.8 178.4 176.7 170.5 166.2 165.2 161.0 154.7 145.0 134.9 125.8 115.4 105.8 95.4 84.6 74.2 64.8 56.1 47.7 40.0 31.9 24.7 Notes: 1. S parameter is measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. MSG/MAG & |S21|2 (dB) 40 S21 MSG MAG 30 20 10 0 -10 -20 0 2 4 6 8 10 12 14 16 18 FREQUENCY (GHz) Figure 42. MSG/MAG & |S21|2 vs. Frequency at 5.5V 280mA. 15 -158.7 -170.0 -174.9 -177.9 -179.3 179.2 177.8 176.3 175.7 174.5 170.1 166.5 164.0 160.3 155.2 148.6 147.0 135.8 119.2 117.2 106.2 92.7 89.5 79.6 70.2 66.7 52.4 39.7 30.0 0.172 0.307 0.420 0.550 0.638 0.715 0.782 0.850 0.878 0.958 1.141 1.182 1.222 1.284 1.307 1.278 1.271 1.340 1.401 1.416 1.459 1.420 1.655 1.479 1.332 1.385 1.536 1.466 1.533 ATF-501P8 Typical Scattering Parameters, VDS = 5.5V, IDS = 200 mA Freq. GHz S11 Mag. Ang. dB S21 Mag. Ang. dB S12 Mag. Ang. S22 Mag. Ang. MSG/MAG K dB factor 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.5 2 2.5 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 0.921 0.914 0.914 0.913 0.909 0.909 0.909 0.908 0.911 0.909 0.905 0.907 0.903 0.906 0.903 0.904 0.899 0.904 0.901 0.896 0.891 0.877 0.871 0.851 0.850 0.839 0.834 0.827 0.814 31.8 26.4 23.0 20.5 18.9 17.4 16.0 14.9 13.8 12.9 9.3 7.3 6.8 5.2 3.2 1.0 -0.8 -3.2 -4.3 -5.4 -6.1 -7.0 -8.3 -8.2 -8.8 -9.5 -10.2 -10.2 -10.5 38.725 20.822 14.136 10.611 8.824 7.375 6.329 5.549 4.922 4.418 2.933 2.322 2.182 1.815 1.447 1.123 0.909 0.693 0.608 0.536 0.497 0.446 0.386 0.387 0.364 0.335 0.309 0.309 0.298 113.1 100.3 94.7 91.3 88.4 86.0 83.9 81.8 80.0 78.0 69.4 63.4 62.1 56.5 47.8 35.9 20.3 6.5 -4.0 -15.9 -23.9 -32.3 -42.5 -49.0 -60.0 -67.9 -72.5 -82.4 -89.4 -37.7 -37.1 -36.5 -36.5 -35.4 -35.4 -34.9 -34.4 -34.0 -33.6 -31.7 -30.5 -30.2 -28.9 -27.3 -24.9 -23.0 -22.4 -20.9 -19.7 -18.9 -17.7 -17.4 -15.9 -15.3 -14.5 -14.2 -13.3 -12.5 0.013 0.014 0.015 0.015 0.017 0.017 0.018 0.019 0.020 0.021 0.026 0.030 0.031 0.036 0.043 0.057 0.071 0.076 0.090 0.104 0.113 0.131 0.135 0.160 0.172 0.188 0.195 0.216 0.238 29.6 22.8 22.7 24.9 26.8 29.4 31.3 32.9 35.3 36.4 41.7 44.3 44.5 45.1 44.7 42.3 35.1 27.4 22.2 12.6 10.2 1.0 -5.8 -11.8 -21.0 -29.9 -36.8 -44.6 -51.8 0.615 0.659 0.669 0.673 0.662 0.662 0.665 0.667 0.662 0.664 0.673 0.674 0.673 0.671 0.684 0.678 0.681 0.647 0.640 0.634 0.692 0.739 0.730 0.767 0.803 0.805 0.768 0.792 0.790 34.7 31.7 29.7 28.5 27.2 26.4 25.5 24.7 23.9 23.2 18.8 16.5 15.7 14.2 12.1 9.9 8.2 6.2 4.6 3.1 2.6 1.5 -0.1 -0.3 -0.3 -1.3 -2.5 -2.5 -3.2 -130.1 -155.0 -164.6 -170.1 -172.9 -175.7 -178.1 -179.7 178.5 176.8 170.8 166.3 165.3 161.2 155.0 145.1 135.2 126.2 115.6 106.2 95.4 85.0 74.4 64.9 56.2 48.0 39.7 32.2 24.4 Notes: 1. S parameter is measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. MSG/MAG & |S21|2 (dB) 40 S21 MSG MAG 30 20 10 0 -10 -20 0 2 4 6 8 10 12 14 16 18 FREQUENCY (GHz) Figure 43. MSG/MAG & |S21|2 vs. Frequency at 5.5V 200mA. 16 -156.5 -168.9 -174.1 -177.3 -178.9 179.6 178.2 176.5 176.0 174.8 170.3 166.6 164.1 160.4 155.3 148.7 147.2 136.0 119.4 117.5 106.3 92.9 89.7 79.8 70.5 66.9 52.7 39.9 30.2 0.145 0.274 0.385 0.510 0.576 0.672 0.739 0.798 0.843 0.897 1.079 1.153 1.208 1.226 1.273 1.257 1.235 1.332 1.386 1.459 1.408 1.403 1.625 1.480 1.364 1.403 1.585 1.472 1.510 ATF-501P8 Typical Scattering Parameters, VDS = 5.5V, IDS = 360 mA Freq. GHz S11 Mag. Ang. dB S21 Mag. Ang. dB S12 Mag. Ang. S22 Mag. Ang. MSG/MAG K dB factor 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.5 2 2.5 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 0.904 0.910 0.912 0.912 0.907 0.909 0.909 0.907 0.909 0.906 0.904 0.904 0.900 0.905 0.900 0.904 0.897 0.902 0.899 0.893 0.886 0.867 0.871 0.854 0.855 0.845 0.842 0.833 0.826 31.8 26.4 23.0 20.5 18.9 17.4 16.0 14.9 13.9 12.9 9.4 7.3 6.8 5.2 3.3 1.1 -0.8 -3.2 -4.3 -5.3 -6.0 -6.8 -8.2 -8.2 -8.9 -9.6 -10.0 -10.2 -10.5 38.785 20.860 14.161 10.635 8.834 7.399 6.337 5.557 4.942 4.429 2.941 2.325 2.191 1.817 1.456 1.130 0.913 0.695 0.609 0.544 0.499 0.455 0.389 0.387 0.360 0.330 0.315 0.309 0.299 113.0 100.3 94.7 91.2 88.4 86.1 83.9 81.9 80.0 78.0 69.7 63.6 62.2 56.6 48.2 35.7 20.7 7.3 -3.7 -16.0 -23.1 -31.7 -43.4 -49.9 -61.2 -68.7 -72.5 -82.1 -87.9 -39.2 -38.4 -37.7 -37.1 -36.5 -35.9 -35.4 -35.4 -34.9 -34.4 -32.0 -30.8 -30.2 -29.1 -27.5 -24.9 -23.0 -22.3 -20.8 -19.6 -18.9 -17.5 -17.2 -15.7 -15.1 -14.3 -14.0 -13.2 -12.3 0.011 0.012 0.013 0.014 0.015 0.016 0.017 0.017 0.018 0.019 0.025 0.029 0.031 0.035 0.042 0.057 0.071 0.077 0.091 0.105 0.114 0.133 0.138 0.164 0.176 0.192 0.199 0.220 0.242 29.8 24.8 25.5 27.8 30.5 33.4 35.7 37.6 39.7 41.2 46.2 47.9 48.4 48.6 47.4 44.4 36.8 28.9 23.4 13.8 11.7 2.3 -4.6 -11.0 -20.4 -29.6 -36.7 -44.6 -51.8 0.619 0.662 0.672 0.675 0.663 0.664 0.666 0.668 0.665 0.665 0.672 0.676 0.675 0.674 0.686 0.680 0.683 0.649 0.643 0.636 0.696 0.743 0.732 0.769 0.805 0.806 0.769 0.792 0.789 35.5 32.4 30.4 28.8 27.7 26.7 25.7 25.1 24.4 23.7 18.4 16.2 15.5 14.0 12.0 9.9 8.0 6.0 4.5 3.1 2.4 1.4 0.0 -0.2 -0.3 -1.3 -2.2 -2.4 -3.1 -132.0 -156.2 -165.4 -170.7 -173.5 -176.1 -178.3 179.9 178.4 176.7 170.5 166.1 165.1 161.0 155.0 144.9 134.8 125.7 115.5 105.9 95.4 85.0 75.0 65.6 56.8 48.1 40.7 32.6 25.5 Notes: 1. S parameter is measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. MSG/MAG & |S21|2 (dB) 40 S21 MSG MAG 30 20 10 0 -10 -20 0 2 4 6 8 10 12 14 FREQUENCY (GHz) Figure 44. MSG/MAG & |S21|2 vs. Frequency at 5.5V 360mA. 17 16 18 -159.9 -170.6 -175.3 -178.2 -179.5 178.9 177.6 176.2 175.5 174.3 170.1 166.5 163.9 160.2 155.1 148.5 146.9 135.8 119.1 117.1 106.1 92.6 89.3 79.4 70.0 66.4 52.1 39.4 29.7 0.198 0.338 0.459 0.571 0.666 0.741 0.808 0.901 0.943 1.008 1.150 1.225 1.254 1.278 1.329 1.267 1.264 1.359 1.402 1.470 1.447 1.439 1.589 1.436 1.323 1.371 1.502 1.436 1.457 Device Models Refer to Agilent's Web Site www.agilent.com/view/rf Ordering Information Part Number No. of Devices Container ATF-501P8-TR1 3000 7" Reel ATF-501P8-TR2 10000 13"Reel ATF-501P8-BLK 100 antistatic bag 2 x 2 LPCC (JEDEC DFP-N) Package Dimensions D1 D pin1 P pin1 8 1 2 e E1 3 R 0PX 4 5 Top View Bottom View A1 A A2 End View Side View DIMENSIONS SYMBOL A A1 A2 b D D1 E E1 e MIN. 0.70 0 0.203 REF 0.225 1.9 0.65 1.9 1.45 0.50 BSC NOM. 0.75 0.02 0.203 REF 0.25 2.0 0.80 2.0 1.6 0.50 BSC DIMENSIONS ARE IN MILLIMETERS 18 E 6 b L A 7 MAX. 0.80 0.05 0.203 REF 0.275 2.1 0.95 2.1 1.75 0.50 BSC PCB Land Pattern and Stencil Design 2.72 (107.09) 2.80 (110.24) 0.70 (27.56) 0.63 (24.80) 0.25 (9.84) 0.22 (8.86) 0.25 (9.84) PIN 1 0.20 (7.87) Solder mask RF transmission line + 0.32 (12.79) PIN 1 0.50 (19.68) 0.50 (19.68) 1.60 (62.99) 0.28 (10.83) 0.25 (9.74) 0.60 (23.62) 1.54 (60.61) 0.63 (24.80) 0.72 (28.35) 0.80 (31.50) 0.15 (5.91) 0.55 (21.65) Stencil Layout (top view) PCB Land Pattern (top view) Notes: Typical stencil thickness is 5 mils. Measurements are in millimeters (mils). Device Orientation 4 mm REEL 8 mm CARRIER TAPE USER FEED DIRECTION COVER TAPE 19 0PX 0PX 0PX 0PX Tape Dimensions P0 P D P2 E F W + + D1 Tt t1 K0 10 Max 10 Max A0 DESCRIPTION CAVITY PERFORATION CARRIER TAPE COVER TAPE DISTANCE B0 SYMBOL SIZE (mm) SIZE (inches) LENGTH A0 2.30 0.05 0.091 0.004 WIDTH B0 2.30 0.05 0.091 0.004 DEPTH K0 1.00 0.05 0.039 0.002 PITCH P 4.00 0.10 0.157 0.004 BOTTOM HOLE DIAMETER D1 1.00 + 0.25 0.039 + 0.002 DIAMETER D 1.50 0.10 0.060 0.004 PITCH P0 4.00 0.10 0.157 0.004 POSITION E 1.75 0.10 0.069 0.004 WIDTH W THICKNESS t1 8.00 + 0.30 8.00 - 0.10 0.254 0.02 0.315 0.012 0.315 0.004 0.010 0.0008 WIDTH C 5.4 0.10 0.205 0.004 TAPE THICKNESS Tt 0.062 0.001 0.0025 0.0004 CAVITY TO PERFORATION (WIDTH DIRECTION) F 3.50 0.05 0.138 0.002 CAVITY TO PERFORATION (LENGTH DIRECTION) P2 2.00 0.05 0.079 0.002 www.agilent.com/semiconductors For product information and a complete list of distributors, please go to our web site. For technical assistance call: Americas/Canada: +1 (800) 235-0312 or (916) 788-6763 Europe: +49 (0) 6441 92460 China: 10800 650 0017 Hong Kong: (65) 6756 2394 India, Australia, New Zealand: (65) 6755 1939 Japan: (+81 3) 3335-8152(Domestic/International), or 0120-61-1280(Domestic Only) Korea: (65) 6755 1989 Singapore, Malaysia, Vietnam, Thailand, Philippines, Indonesia: (65) 6755 2044 Taiwan: (65) 6755 1843 Data subject to change. Copyright (c) 2003 Agilent Technologies, Inc. July 28, 2003 5988-9767EN