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Item Symbol Ratings Unit Remarks
Drain-source voltage VDS 250
VDSX 220
Continuous drain current ID14
Pulsed drain current ID(puls] ±56
Gate-source voltage VGS ±30
Repetitive or non-repetitive IAR 14
Non-repetitive
Maximum avalanche energy EAS 301.1
Repetitive
Maximum avalanche energy 10.5
Maximum drain-source dV/dt dVDS/dt 20
Peak diode recovery dV/dt dV/dt 5
Peak diode recovery -di/dt -di/dt 100
Maximum power dissipation PD2.02
105
Operating and storage Tch +150
temperature range Tstg
Electrical characteristics (Tc =25°C unless otherwise specified)
Thermalcharacteristics
2SK3923-01 FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Features
High speed switching Low on-resistance
No secondary breadown Low driving power
Avalanche-proof
Applications
Switching regulators DC-DC converters
UPS (Uninterruptible Power Supply)
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item Symbol Test Conditions
Zero gate voltage drain current IDSS VDS=250V VGS=0V
VDS=200V VGS=0V
VGS=±30V
ID=7A VGS=10V
ID=7A VDS=25V
VCC=48V ID=7A
VGS=10V
RGS=10 Ω
V
V
μA
mA
nA
mΩ
S
pF
nC
V
ns
μC
ns
Min. Typ. Max. Units
Thermal resistance Rth(ch-c) channel to case
Rth(ch-a) channel to ambient
1.191
62.0
°C/W
°C/W
Symbol
V(BR)DSS
VGS(th)
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
VSD
trr
Qrr
Item
Drain-source breakdown voltage
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
ID= 250μA VGS=0V
ID= 250μA VDS=VGS
Tch=25°C
Tch=125°C
VDS=0V
VDS=75V
VGS=0V
f=1MHz
VCC=125V
ID=14A
VGS=10V
IF=14A VGS=0V Tch=25°C
IF=14A VGS=0V
-di/dt=100A/μs Tch=25°C
V
V
A
A
V
A
mJ
mJ
kV/μs
kV/μs
A/μs
W
W
°C
°C
250
3.0 5.0
25
2.0
100
220 280
510
780 1170
90 135
69
12 18
3 4.5
23 35
69
22 33
7.0 11
6.0 9.0
1.00 1.50
120 250
0.5 1.25
-55 to +150
Outline Drawings [mm]
Equivalent circuit schematic
Gate(G)
Source(S)
Drain(D)
Super FAP-G Series 200509
=
<
VGS=-30V
Note *1
Note *2
Note *3
VDS 250V
Note *4
Note *5
Ta=25°C
Tc=25°C
TO-220AB
Min. Typ. Max. Units
http://www.fujielectric.co.jp/fdt/scd/
=
<
=
<
Note *1 Tch 150°C
Note *2 Starting Tch=25°C, IAS=6A, L=14.1mH, VCC=48V, RG=50Ω
EAS limited by maximum channel temperrature and avalanche current.
See to ‘Avalanche Energy’ graph.
Note *3 Repetitve rating : Pulse width limited by maximum channel temperature.
See to ‘Transient Thermal impedance’ graph.
Note *4 IF -ID, -di/dt=100A/μs, Vcc BVDSS, Tch 150°C
Note *5 IF -ID, dv/dt=5kV/μs, Vcc BVDSS, Tch 150°C
=
<=
<
=
<
<
=<
=<
=
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Characteristics
2SK3923-01 FUJI POWER MOSFET
0 25 50 75 100 125 150
0
20
40
60
80
100
120
Allowable Power Dissipation
PD=f(Tc)
PD [W]
Tc [°C]
0 2 4 6 8 10121416
0
5
10
15
20
25
30
35
20V
10V
8V
7V
6.5V
ID [A]
VDS [V]
Typical Output Characteristics
ID=f(VDS):80 μs pulse test,Tch=25°C
VGS=6V
012345678910
0.01
0.1
1
10
ID[A]
VGS[V]
Typical Transfer Characteristic
ID=f(VGS):80 μs pulse test,VDS=25V,Tch=25°C
0.1 1 10 100
0.1
1
10
100
gfs [S]
ID [A]
Typical Transconductance
gfs=f(ID):80 μs pulse test,VDS=25V,Tch=25°C
0 5 10 15 20 25 30 35
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
RDS(on) [ Ω ]
ID [A]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80 μs pulse test,Tch=25°C
10V
20V
8V
7.5V
7.0V
VGS=6.5V
-50 -25 0 25 50 75 100 125 150
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
RDS(on) [ Ω ]
Tch [°C]
typ.
max.
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=7A,VGS=10V
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2SK3923-01 FUJI POWER MOSFET
-50 -25 0 25 50 75 100 125 150
0
1
2
3
4
5
6
7
max.
min.
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250uA
VGS(th) [V]
Tch [°C]
0 10203040506070
0
4
8
12
16
20
24
Qg [nC]
Typical Gate Charge Characteristics
VGS=f(Qg):ID=14A,Tch=25°C
VGS [V]
200V
250V
Vcc= 50V
10-1 100101102103
1p
10p
100p
1n
10n
C [F]
VDS [V]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
Crss
Coss
Ciss
0.00 0.25 0.50 0.75 1.00 1.25 1.50
0.1
1
10
100
IF [A]
VSD [V]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80 μs pulse test,Tch=25°C
10-1 100101102
100
101
102
103
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=48V,VGS=10V,RG=10Ω
td(on)
tr
tf
td(off)
t [ns]
ID [A]
0 25 50 75 100 125 150
0
50
100
150
200
250
300
350
IAS=5.6A
IAS=8.4A
IAS=14A
EAV [mJ]
starting Tch [°C]
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=48V,I(AV)<=14A
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2SK3923-01 FUJI POWER MOSFET
http://www.fujielectric.co.jp/fdt/scd/
10-8 10-7 10-6 10-5 10-4 10-3 10-2
10-2
10-1
100
101
102
Single Pulse
Maximum Avalanche Current Pulsewidth
IAV=f(tAV):starting Tch=25°C,Vcc=48V
Avalanche Current I AV [A]
tAV [sec]
10-6 10-5 10-4 10-3 10-2 10-1 100
10-3
10-2
10-1
100
101
Transient Thermal Impedance
Zth(ch-c)=f(t):D=0
Zth(ch-c) [°C/W]
t [sec]
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