APRIL 2001 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4500H3BJ Overvoltage Protector
TISP4500H3BJ
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
Device Symbol
Non-Conductive During K.20/21/45 Power Contact Test
- Off-State Voltage .................................................... >245 V rms
- For Controlled Environment ............................... 0 °C to 70 °C
Ion-Implanted Breakdown Region
Precise and Stable Voltage
Low Voltage Overshoot under Surge
Rated for International Surge Wave Shapes
How To Order
SMBJ Package (Top View)
Description
This device is designed to limit overvoltages on the telephone line to ±500 V over the temperature range. The minimum off-state voltage of
±350 V allows a.c. power contact voltages of up to 245 V rms to occur without clipping. The combination of these two voltages gives
protection for components having ratings of 500 V or above and ensures the protector is non-conducting for the ITU-T recommendations
K.20/21/45 230 V rms power cross test condition (test number 2.3.1).
The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially clipped by breakdown clamping until
the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes the
current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current helps prevent d.c. latchup as
the diverted current subsides.
Device VDRM
V @ 0 °C
V(BO)
V @ 70 °C
TISP4500H3BJ 350 500
.............................................. UL Recognized Component
Wave Shape Standard I
PPSM
A
2/10 GR-1089-CORE 500
10/250 GR-1089-CORE 230
10/700 ITU-T K.20/21/45 200
10/1000 GR-1089-CORE 100
TR
MD-SMB-004-a
21
T
R
SD-TISP4xxx-001-a
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
Device Package Carrier
TISP 4500H3B J SMB (DO-214AA) E m bossed T a pe Reeled TISP4500H3BJR-S
Marking
Code
4500H3
Std. Qty.
3000
Order As
*RoHS COMPLIANT
APRIL 2001 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Electrical Characteristics, 0 °C ≤ TA ≤ 70 °C (Unless Otherwise Noted)
TISP4500H3BJ Overvoltage Protector
Absolute Maximum Ratings, 0 °C ≤ TA ≤ 70 °C (Unless Otherwise Noted)
Thermal Characteristics
Parameter Test Conditions Min Typ Max Unit
IDRM Repetitive peak off-
state current VD = VDRM TA = 25 °C
TA = 70 °C
±5
±10 µA
V(BO) Breakover voltage dv/dt = ±250 V/ms, RSOURCE = 300 Ω±500 V
V(BO) Impulse breakover
voltage
ITU-T recommendation K.44 (02/2000)
Figure A.3-1/K.44 10/700 impulse generator
Charge Voltage = ±4kV
±500 V
I(BO) Breakover current dv/dt = ±250 V/ms, RSOURCE = 300 Ω±0.6 A
IHHolding current IT=±5 A, di/dt = -/+30 mA/ms ±0.15 A
IDOff-state current VD=±50 V TA = 70 °C±10 µA
Coff Off-state capacitance
f = 1 MHz, Vd = 1 V rms, VD = 0
f = 1 MHz, Vd = 1 V rms, VD = -1 V
f = 1 MHz, Vd = 1 V rms, VD = -2 V
f = 1 MHz, Vd = 1 V rms, VD = -50 V
84
67
62
31
pF
Parameter Test Conditions Min Typ Max Unit
RθJA Junction to free air thermal resistance
EIA/JESD51-3 PCB, IT = ITSM(1000),
TA = 25 °C, (see Note 5) 113
°C/W
265 mm x 210 mm populated line card,
4-layer PCB, IT = ITSM(1000), TA = 25 °C50
NOTE 5: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.
Rating Symbol Value Unit
Repetitive peak off-state voltage VDRM ±350 V
Non-repetitive peak on-state pulse current (see Notes 1 and 2)
IPPSM
500
230
200
100
A
2/10 (Telcordia GR-1089-CORE, 2/10 µs voltage wave shape)
10/250 (Telcordia GR-1089-CORE, 10/250 µs voltage wave shape)
10/700 (ITU-T K.20/21/45, 5/310 µs current wave shape)
10/1000 (Telcordia GR-1089-CORE, 10/1000 µs voltage wave shape)
TA = 25 °C
TA = 25 °C
TA = 25 °C
Non-repetitive peak on-state current (see Notes 1, 2 and 3)
ITSM ±55
±2.0
A
50 Hz, 20 ms (1 cycle)
50 Hz, 1000 s
Junction temperature TJ-40 to +150 °C
Storage temperature range Tstg -65 to +150 °C
NOTES: 1. Initially the device must be in thermal equilibrium.
2. The surge may be repeated after the device returns to its initial conditions.
3. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring
track widths.
APRIL 2001 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Parameter Measurement Information
TISP4500H3BJ Overvoltage Protector
Figure 1. Voltage-current Characteristic for T and R Terminals
All Measurements are Referenced to the R Terminal
-v
I(BR)
V(BR)
VD
IH
ITSM
IPPSM
V(BO)
I(BO)
ID
Quadrant I
Switching
Characteristic
+v
+i
V(BO)
I(BO)
I(BR)
V(BR)
VD
ID
IH
ITSM
IPPSM
-i
Quadrant III
Switching
Characteristic PM4XAD
APRIL 2001 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
MECHANICAL DATA
TISP4500H3BJ Overvoltage Protector
Recommended Printed Wiring Land Pattern Dimensions
Device Symbolization Code
Devices will be coded as below. As the device parameters are symmetrical, terminal 1 is not identified.
SMB Land Pattern
MDXXBIB
2.54
(.100)
2.40
(.094)
2.16
(.085) MM
(INCHES)
DIMENSIONS ARE:
Device Symbolization Code
TISP4500H3BJ 4500H3
“TISP” is a trademark of Bourns, Ltd., a Bourns Company, and is Registered in U.S. Patent and Trademark Office.
“Bourns” is a registered trademark of Bourns, Inc. in the U.S. and other countries.
