LTC5598
1
5598f
TYPICAL APPLICATION
DESCRIPTION
5MHz to 1600MHz
High Linearity Direct
Quadrature Modulator
The LTC
®
5598 is a direct I/Q modulator designed for high
performance wireless applications, including wireless
infrastructure. It allows direct modulation of an RF signal
using differential baseband I and Q signals. It supports
point-to-point microwave link, GSM, EDGE, CDMA,
700MHz band LTE, CDMA2000, CATV applications and
other systems. It may also be confi gured as an image
reject upconverting mixer, by applying 90° phase-shifted
signals to the I and Q inputs.
The I/Q baseband inputs consist of voltage-to-current
converters that in turn drive double-balanced mixers.
The outputs of these mixers are summed and applied
to a buffer, which converts the differential mixer signals
to a 50Ω single-ended buffered RF output. The four
balanced I and Q baseband input ports are intended for
DC coupling from a source with a common-mode voltage
level of about 0.5V. The LO path consists of an LO buffer
with single-ended or differential inputs, and precision
quadrature generators that produce the LO drive for the
mixers. The supply voltage range is 4.5V to 5.25V, with
about 168mA current.
5MHz to 1600MHz Direct Conversion Transmitter Application
L, LT, LTC and LTM are registered trademarks of Linear Technology Corporation.
All other trademarks are the property of their respective owners.
FEATURES
APPLICATIONS
n Frequency Range: 5MHz to 1600MHz
n High Output IP3: +27.7dBm at 140MHz
+22.9dBm at 900MHz
n Low Output Noise Floor at 6MHz Offset:
No Baseband AC Input: –161.2dBm/Hz
P
OUT = 5.5dBm: –160dBm/Hz
n Low LO Feedthrough: –55dBm at 140MHz
n High Image Rejection: –50.4dBc at 140MHz
n Integrated LO Buffer and LO Quadrature Phase
Generator
n 50Ω Single-Ended LO and RF Ports
n >400MHz Baseband Bandwidth
n 24-Lead QFN 4mm × 4mm Package
n Pin-Compatible with Industry Standard Pin-Out
n Shut-down Mode
n Point-to-Point Microwave Link
n Military Radio
n Basestation Transmitter GSM/EDGE/CDMA2K
n 700MHz LTE Basestation Transmitter
n Satellite Communication
n CATV/Cable Broadband Modulator
n 13.56MHz/UHF RFID Modulator
90o
0o
LTC5598
10nF
50Ω 10nF 470nF
10nF
BASEBAND
GENERATOR
PA
RF = 5MHz
TO 1600MHz
1nF
x2
4.7μF
x2
EN
5V
V-I
V-I
I-CHANNEL
Q-CHANNEL
VCC
5598 TA01
I-DAC
Q-DAC
VCO/SYNTHESIZER RF OUTPUT POWER (dBm)
NOISE FLOOR AT 6MHz OFFSET (dBm/Hz)
–152
–154
–156
–158
–160
–162
5598 TA02
8246–4 –2 0–12 –10 –8 –6–14
fLO = 140MHz; fBB = 2kHz; CW (NOTE 3)
20dBm
19.3dBm
13.4dBm
10.4dBm
8.4dBm
6.4dBm
Noise Floor vs RF Output Power
and Differential LO Input Power
LTC5598
2
5598f
PIN CONFIGURATION ABSOLUTE MAXIMUM RATINGS
Supply Voltage .........................................................5.6V
Common Mode Level of BBPI, BBMI and
BBPQ, BBMQ ...........................................................0.6V
LOP, LOM Input ....................................................20dBm
Voltage on Any Pin
Not to Exceed ...................................–0.3V to VCC + 0.3V
TJMAX .................................................................... 150°C
Operating Temperature Range..................40°C to 85°C
Storage Temperature Range ...................65°C to 150°C
(Note 1)
24 23 22 21 20 19
7 8 9
TOP VIEW
UF PACKAGE
24-LEAD (4mm s 4mm) PLASTIC QFN
10 11 12
6
5
4
325
2
1
13
14
15
16
17
18
EN
GND
LOP
LOM
GND
CAPA
VCC2
GNDRF
RF
NC
GNDRF
NC
VCC1
GND
BBMI
BBPI
GND
GND
CAPB
GND
BBMQ
BBPQ
GND
GND
TJMAX = 150°C, θJA = 37°C/W
EXPOSED PAD (PIN 25) IS GND, MUST BE SOLDERED TO PCB
ORDER INFORMATION
LEAD FREE FINISH TAPE AND REEL PART MARKING PACKAGE DESCRIPTION TEMPERATURE RANGE
LTC5598IUF#PBF LTC5598IUF#TRPBF 5598 24-Lead (4mm × 4mm) Plastic QFN 40°C to 85°C
Consult LTC Marketing for parts specifi ed with wider operating temperature ranges.
Consult LTC Marketing for information on non-standard lead based fi nish parts.
For more information on lead free part marking, go to: http://www.linear.com/leadfree/
For more information on tape and reel specifi
cations, go to: http://www.linear.com/tapeandreel/
LTC5598
3
5598f
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
RF OUTPUT (RF)
fRF RF Frequency Range 5 to 1600 MHz
S22, ON RF Output Return Loss EN = High, 5MHz to 1600MHz <–20 dB
fLO = 140MHz, fRF = 139.9MHz
GVConversion Voltage Gain 20 • Log (VRF, OUT, 50Ω/VIN, DIFF, I or Q)–2dB
POUT Absolute Output Power 1VPP,DIFF on each I&Q Inputs 2 dBm
OP1dB Output 1dB Compression 8.5 dBm
OIP2 Output 2nd Order Intercept (Notes 4, 5) 74 dBm
OIP3 Output 3rd Order Intercept (Notes 4, 6) 27.7 dBm
NFloor RF Output Noise Floor No Baseband AC Input Signal (Note 3)
POUT = 4.6dBm (Note 3) PLO, SE = 10dBm
POUT = 5.5dBm (Note 3) PLO, DIFF = 20dBm
–161.2
–154.5
–160
dBm/Hz
dBm/Hz
dBm/Hz
IR Image Rejection (Note 7) –50.4 dBc
LOFT LO Feedthrough
(Carrier Leakage)
EN = High (Note 7)
EN = Low (Note 7)
–55
–78
dBm
dBm
fLO = 450MHz, fRF = 449.9MHz
GVConversion Voltage Gain 20 • Log (VRF, OUT, 50Ω/VIN, DIFF, I or Q) –5.0 –2.1 0.5 dB
POUT Absolute Output Power 1VPP,DIFF on each I&Q Inputs 1.9 dBm
OP1dB Output 1dB Compression 8.4 dBm
OIP2 Output 2nd Order Intercept (Notes 4, 5) 72 dBm
OIP3 Output 3rd Order Intercept (Notes 4, 6) 25.5 dBm
NFloor RF Output Noise Floor No Baseband AC Input Signal (Note 3) –160.9 dBm/Hz
IR Image Rejection (Note 7) –55 dBc
LOFT LO Feedthrough
(Carrier Leakage)
EN = High (Note 7)
EN = Low (Note 7)
–51
–68
dBm
dBm
fLO = 900MHz, fRF = 899.9MHz
GVConversion Voltage Gain 20 • Log (VRF, OUT, 50Ω/VIN, DIFF, I or Q)–2dB
POUT Absolute Output Power 1VPP,DIFF on each I&Q Inputs 2 dBm
OP1dB Output 1dB Compression 8.5 dBm
OIP2 Output 2nd Order Intercept (Notes 4, 5) 69 dBm
OIP3 Output 3rd Order Intercept (Notes 4, 6) 22.9 dBm
NFloor RF Output Noise Floor No Baseband AC Input Signal (Note 3)
POUT = 5.2dBm (Note 3) PLO, SE = 10dBm
–160.3
–154.5
dBm/Hz
dBm/Hz
IR Image Rejection (Note 7) –54 dBc
LOFT LO Feedthrough
(Carrier Leakage)
EN = High (Note 7)
EN = Low (Note 7)
–48
–54
dBm
dBm
ELECTRICAL CHARACTERISTICS
V
CC = 5V, EN = 5V, TA = 25ºC, PLO = 0dBm, single-ended; BBPI, BBMI,
BBPQ, BBMQ common-mode DC voltage VCMBB = 0.5VDC, I&Q baseband input signal = 100kHz CW, 0.8VPP,DIFF each, I&Q 90° shifted
(lower side-band selection), unless otherwise noted. (Note 11)
LTC5598
4
5598f
ELECTRICAL CHARACTERISTICS
V
CC = 5V, EN = 5V, TA = 25ºC, PLO = 0dBm, single-ended; BBPI, BBMI,
BBPQ, BBMQ common-mode DC voltage VCMBB = 0.5VDC, I&Q baseband input signal = 100kHz CW, 0.8VPP,DIFF each, I&Q 90° shifted
(lower side-band selection), unless otherwise noted. (Note 11)
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
LO INPUT (LOP)
fLO LO Frequency Range 5 to 1600 MHz
PLO,DIFF Differential LO Input Power Range –10 to 20 dBm
PLO, SE Single-Ended LO Input Power Range –10 to 12 dBm
S11, ON LO Input Return Loss EN = High –10.5 dB
S11, OFF LO Input Return Loss EN = Low –9.6 dB
BASEBAND INPUTS (BBPI, BBMI, BBPQ, BBMQ)
BWBB Baseband Bandwidth -3dB Bandwidth >400 MHz
Ib,BB Baseband Input Current Single-Ended 68 μA
RIN, SE Input Resistance Single-Ended –7.4
VCMBB DC Common-Mode Voltage Externally Applied 0.5 V
VSWING Amplitude Swing No Hard Clipping, Single-Ended 0.86 VP-P
POWER SUPPLY (VCC1, VCC2)
VCC Supply Voltage 4.5 5 5.25 V
ICC(ON) Supply Current EN = High, ICC1+ ICC2 130 165 200 mA
ICC(OFF) Supply Current, Sleep Mode EN = 0V, ICC1+ ICC2 0.24 0.9 mA
tON Turn-On Time EN = Low to High (Notes 8, 10) 75 ns
tOFF Turn-Off Time EN = High to Low (Notes 9, 10) 10 ns
POWER UP/DOWN
Enable Input High Voltage
Input High Current
EN = High
EN = 5V
2
43
V
μA
Sleep Input Low Voltage
Input Low Current
EN = Low
EN = 0V –40
1V
μA
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: The LTC5598 is guaranteed functional over the operating
temperature range –40ºC to 85ºC.
Note 3: At 6MHz offset from the LO signal frequency. 100nF between BBPI
and BBMI, 100nF between BBPQ and BBMQ.
Note 4: Baseband is driven by 2MHz and 2.1MHz tones with 1VPP,DIFF for
two-tone signals at each I or Q input (0.5VPP,DIFF for each tone).
Note 5: IM2 is measured at LO frequency – 4.1MHz.
Note 6: IM3 is measured at LO frequency – 1.9 MHz and LO frequency
– 2.2MHz.
Note 7: Amplitude average of the characterization data set without image
or LO feedthrough nulling (unadjusted).
Note 8: RF power is within 10% of fi nal value.
Note 9: RF power is at least 30dB lower than in the ON state.
Note 10: External coupling capacitors at pins LOP, LOM and RF are 100pF
each.
Note 11: Tests are performed as shown in the confi guration of Figure 10.
The LO power is applied to J3 while J5 is terminated with 50Ω to ground
for single-ended LO drive.
LTC5598
5
5598f
TYPICAL PERFORMANCE CHARACTERISTICS
TEMPERATURE (°C)
–40
140
SUPPLY CURRENT (mA)
170
160
150
180
85–15 10 35
5598 G01
60
5.25V
5.0V
4.5V
Output IP2 vs RF Frequency
Output 1dB Compression
vs RF Frequency
LO Feedthrough to RF Output
vs LO Frequency
Image Rejection vs LO Frequency
Noise Floor vs RF Frequency
(No AC Baseband Input Signal)
Supply Current vs Temperature Voltage Gain vs RF Frequency Output IP3 vs RF Frequency
VCC = 5V, EN = 5V, TA = 25ºC, fRF = fLO – fBB, PLO =
0dBm single-ended, BBPI, BBMI, BBPQ, BBMQ common-mode DC voltage VCMBB = 0.5VDC, I&Q baseband input signal = 100kHz,
0.8VPP,DIFF, two-tone baseband input signal = 2MHz, 2.1MHz, 0.5VPP,DIFF each tone, I&Q 90° shifted (lower side-band selection);
fNOISE = fLO – 6MHz; unless otherwise noted. (Note 11)
RF Two-Tone Power (Each Tone),
IM2 and IM3 vs RF Frequency
RF FREQUENCY (MHz)
VOLTAGE GAIN (dB)
–1
–3
–2
–4
–5 1000
5598 G02
10010
5V, 25°C
5.25V, 25°C
4.5V, 25°C
5V, –40°C
5V, 85°C
RF FREQUENCY (MHz)
OIP3 (dBm)
29
21
23
27
25
19
17 1000
5598 G03
10010
5V, 25°C
5.25V, 25°C
4.5V, 25°C
5V, –40°C
5V, 85°C
RF FREQUENCY (MHz)
OIP2 (dBm)
85
70
75
80
65
60
55
5598 G04
100 100010
5V, 25°C
5.25V, 25°C
4.5V, 25°C
5V, –40°C
5V, 85°C
RF FREQUENCY (MHz)
OP1dB (dBm)
10
6
8
4
2
0
5598 G05
100 100010
5V, 25°C
5.25V, 25°C
4.5V, 25°C
5V, –40°C
5V, 85°C
LO FREQUENCY (MHz)
LO FEEDTHROUGH (dBm)
–40
–50
–60
–70
5598 G06
100 100010
5V, 25°C
5.25V, 25°C
4.5V, 25°C
5V, –40°C
5V, 85°C
LO FREQUENCY (MHz)
IMAGE REJECTION (dBc)
–20
–30
–40
–50
–60
–70
5598 G07
100 100010
5V, 25°C
5.25V, 25°C
4.5V, 25°C
5V, –40°C
5V, 85°C
RF FREQUENCY (MHz)
NOISE FLOOR (dBm/Hz)
–145
–155
–150
–160
–165
5598 G08
100 100010
5V, 25°C
5.25V, 25°C
4.5V, 25°C
5V, –40°C
5V, 85°C
(NOTE 3)
RF FREQUENCY (MHz)
PRF,TONE (dBm)
IM2 (dBm), IM3 (dBm)
0
–50
–40
–30
–20
–10
–60
–40
–90
–80
–70
–60
–50
–100
5598 G09
100010010
fRF, EACH = fLO – fBB1
fIM3 = fLO + 2*fBB1 +f
BB2
fIM3 = fLO – 2*fBB1 +f
BB2
fIM2 = fLO – fBB1 –f
BB2
LTC5598
6
5598f
LO Feedthrough to RF Output
vs LO Frequency (PLO = 10dBm)
Image Rejection vs LO Frequency
(PLO = 10dBm)
RF Two-Tone Power (Each Tone),
IM2 and IM3 vs RF Frequency
(PLO = 10dBm)
Output IP3 vs RF Frequency
(PLO = 10dBm)
Output IP2 vs RF Frequency
(PLO = 10dBm)
Output 1dB Compression
vs RF Frequency (PLO = 10dBm)
TYPICAL PERFORMANCE CHARACTERISTICS
VCC = 5V, EN = 5V, TA = 25ºC, fRF = fLO – fBB, PLO =
0dBm single-ended, BBPI, BBMI, BBPQ, BBMQ common-mode DC voltage VCMBB = 0.5VDC, I&Q baseband input signal = 100kHz,
0.8VPP,DIFF, two-tone baseband input signal = 2MHz, 2.1MHz, 0.5VPP,DIFF each tone, I&Q 90° shifted (lower side-band selection);
fNOISE = fLO – 6MHz; unless otherwise noted. (Note 11)
Voltage Gain vs RF Frequency
(PLO = 10dBm)
RF Two-Tone Power (Each Tone),
IM2 and IM3 vs Baseband Voltage
and Temperature (fLO = 140MHz)
RF Two-Tone Power (Each Tone),
IM2 and IM3 vs Baseband Voltage
and Temperature (fLO = 900MHz)
fRF, EACH = fLO –fBB1
fIM3 = fLO – 2*fBB1 +f
BB2
fIM3 = fLO + 2*fBB1 +f
BB2
fIM2 = fLO – fBB1 –f
BB2
I AND Q BASEBAND VOLTAGE (VPP, DIFF, EACH TONE)
0.1
PRF, TONE (dBm)
10
–40
–30
–20
–10
0
–50
–30
–80
–70
–60
–50
–40
–90
5598 G10
1
IM2 (dBm), IM3 (dBm)
I AND Q BASEBAND VOLTAGE (VPP, DIFF, EACH TONE)
0.1
PRF,TONE (dBm)
IM2 (dBm), IM3 (dBm)
10
–40
–30
–20
–10
0
–50
–30
–80
–70
–60
–50
–40
–90
5598 G11
1
fRF, EACH = fLO – fBB1
fIM3 = fLO + 2*fBB1 +f
BB2
fIM3 = fLO – 2*fBB1 +f
BB2
fIM2 = fLO – fBB1 –f
BB2
RF FREQUENCY (MHz)
VOLTAGE GAIN (dB)
–1
–4
–3
–2
–5
5598 G12
100010010
5V, 25°C
5.25V, 25°C
4.5V, 25°C
5V, –40°C
5V, 85°C
PLO = 10dBm
RF FREQUENCY (MHz)
OIP3 (dBm)
29
25
23
21
19
27
17
5598 G13
100010010
5V, 25°C
5.25V, 25°C
4.5V, 25°C
5V, –40°C
5V, 85°C
RF FREQUENCY (MHz)
OIP2 (dBm)
85
75
70
65
60
80
55
5598 G14
100010010
5V, 25°C
5.25V, 25°C
4.5V, 25°C
5V, –40°C
5V, 85°C
RF FREQUENCY (MHz)
OP1dB (dBm)
10
8
6
4
2
0
5598 G15
100010010
5V, 25°C
5.25V, 25°C
4.5V, 25°C
5V, –40°C
5V, 85°C
LO FREQUENCY (MHz)
LO FEEDTHROUGH (dBm)
–40
–50
–60
–70
5598 G16
100010010
5V, 25°C
5.25V, 25°C
4.5V, 25°C
5V, –40°C
5V, 85°C
LO FREQUENCY (MHz)
IMAGE REJECTION (dBc)
–20
–30
–40
–50
–60
–70
5598 G17
100010010
5V, 25°C
5.25V, 25°C
4.5V, 25°C
5V, –40°C
5V, 85°C
RF FREQUENCY (MHz)
PRF, TONE (dBm)
IM2 (dBm), IM3 (dBm)
0
–60
–40
–100
5598 G18
100010010
fRF, EACH = fLO – fBB1
fIM3 = fLO – 2*fBB1 +f
BB2
fIM3 = fLO + 2*fBB1 +f
BB2
fIM2 = fLO – fBB1 –f
BB2
LTC5598
7
5598f
Noise Floor vs RF Frequency
(PLO = 10dBm, No AC Baseband
Input Signal)
Image Rejection DistributionLO Feedthrough Distribution
Gain Distribution
LO Feedthrough to RF Output
vs LO Frequency for EN = Low
Output IP3 Distribution at 25°C
TYPICAL PERFORMANCE CHARACTERISTICS
VCC = 5V, EN = 5V, TA = 25ºC, fRF = fLO – fBB, fLO =
450MHz, PLO = 0dBm single-ended, BBPI, BBMI, BBPQ, BBMQ common-mode DC voltage VCMBB = 0.5VDC, I&Q baseband input signal
= 100kHz, 0.8VPP,DIFF, two-tone baseband input signal = 2MHz, 2.1MHz, 0.5VPP,DIFF each tone, I&Q 90° shifted (lower side-band
selection); fNOISE = fLO – 6MHz; unless otherwise noted. (Note 11)
RF FREQUENCY (MHz)
NOISE FLOOR (dBm/Hz)
–145
–150
–155
–160
–165
5598 G19
100010010
5V, 25°C
5.25V, 25°C
4.5V, 25°C
5V, –40°C
5V, 85°C
(NOTE 3)
LO FREQUENCY (MHz)
LO FEEDTHROUGH (dBm)
–40
–80
–60
–100
–120
–140
5598 G20
100010010
PLO = 10dBm
PLO = 0dBm
–40°C
85°C
GAIN (dB)
PERCENTAGE (%)
60
50
40
30
20
10
0
5598 G21
–1.9–2–2.2 –2.1–2.3–2.4
85oC
25oC
–40oC
OIP3 (dBm)
PERCENTAGE (%)
30
25
20
10
15
5
0
5598 G22
26.8 27.225.6 26 26.424.8 25.224.424
LO FEEDTHROUGH (dBm)
PERCENTAGE (%)
25
20
15
10
5
0
5598 G23
–42 –38–54 –50 –46–62 –58–66–70
85oC
25oC
–40oC
IMAGE REJECTION (dBc)
PERCENTAGE (%)
40
35
30
20
25
15
10
5
0
5598 G24
–42–46–62 –58 –54 –50–66–70
85oC
25oC
–40oC
NOISE FLOOR (dBm/Hz)
PERCENTAGE (%)
70
60
50
20
40
30
10
0
5598 G25
–160.4 –160–161.2 –160.8–161.6–162–162.4
85oC
25oC
–40oC
NO RF
Noise Floor Distribution
LO FREQUENCY (MHz)
IMAGE REJECTION (dBc)
0
–80
–70
–60
–50
–40
–30
–20
–10
5598 G20a
100010010
C8 = 0
C8 = 470nF
Image Rejection vs LO Frequency
(PLO = 10dBm)
RF OUTPUT POWER (dBm)
NOISE FLOOR AT 6MHz OFFSET (dBm/Hz)
–152
–154
–156
–160
–158
–162
5598 G20b
86420–2–4–6–8–10–12–14
20dBm
19.3dBm
13.4dBm
10.4dBm
8.4dBm
6.4dBm
fLO = 140MHz; fBB = 2kHz; CW (NOTE 3)
Noise Floor vs RF Output Power and
Differential LO Input Power
LTC5598
8
5598f
BLOCK DIAGRAM
PIN FUNCTIONS
EN (Pin 1): Enable Input. When the Enable Pin voltage is
higher than 2 V, the IC is turned on. When the input voltage
is less than 1 V, the IC is turned off. If not connected, the
IC is enabled.
GND (Pins 2, 5, 8, 11, 12, 19, 20, 23 and 25): Ground.
Pins 2, 5, 8, 11, 12, 19, 20, 23 and exposed pad 25 are
connected to each other internally. For best RF performance,
pins 2, 5, 8, 11, 12, 19, 20, 23 and the Exposed Pad 25
should be connected to RF ground.
LOP (Pin 3): Positive LO Input. This LO input is internally
biased at about 2.3V. An AC de-coupling capacitor should
be used at this pin to match to an external 50Ω source.
LOM (Pin 4): Negative LO Input. This input is internally biased
at about 2.3V. An AC de-coupling capacitor should be used at
this pin via a 50Ω to ground for best OIP2 performance.
CAPA, CAPB (Pins 6, 7): External capacitor pins. A cap-
acitor between the CAPA and the CAPB pin can be used in
order to improve the image rejection for frequencies below
100MHz. A capacitor value of 470nF is recommended.
These pins are internally biased at about 2.3V.
BBMQ, BBPQ (Pins 9, 10): Baseband Inputs for the
Q-channel, each high input impedance. They should be
externally biased at 0.5V common-mode level and not be
left fl oating. Applied common-mode voltage must stay
below 0.6VDC.
NC (Pins 13, 15): No Connect. These pins are fl oating.
GNDRF (Pins 14, 17): Ground. Pins 14 and 17 are connected
to each other internally and function as the ground return for
the RF output buffer. They are connected via back-to-back
diodes to the exposed pad 25. For best LO suppression
performance those pins should be grounded separately
from the exposed paddle 25. For best RF performance,
pins 14 and 17 should be connected to RF ground.
RF (Pin 16): RF Output. The RF output is a DC-coupled
single-ended output with approximately 50Ω output
impedance at RF frequencies. An AC coupling capacitor
should be used at this pin to connect to an external
load.
VCC (Pins 18, 24): Power Supply. It is recommended to
use 1nF and 4.7μF capacitors for decoupling to ground
on each of these pins.
BBPI, BBMI (Pins 21, 22): Baseband Inputs for the Q-
channel, each high input impedance. They should be
externally biased at 0.5V common-mode level and not be
left fl oating. Applied common-mode voltage must stay
below 0.6VDC.
Exposed Pad (Pin 25): Ground. This pin must be soldered
to the printed circuit board ground plane.
90o
0o
LTC5598
V-I
V-I
RF
GNDRF
LOP LOM CAPA CAPB
16
EN 1
3118
GND
52
9
10
22
21
24 18
NC
13 15
BBPI
BBMI
BBPQ
BBMQ
252320
GND
764 5598 BD
19
17
GND
14
12
VCC1 VCC2
LTC5598
9
5598f
The LTC5598 consists of I and Q input differential voltage-
to-current converters, I and Q up-conversion mixers, an
RF output buffer, an LO quadrature phase generator and
LO buffers.
External I and Q baseband signals are applied to the
differential baseband input pins, BBPI, BBMI, and BBPQ,
BBMQ. These voltage signals are converted to currents and
translated to RF frequency by means of double-balanced
up-converting mixers. The mixer outputs are combined
in an RF output buffer, which also transforms the output
impedance to 50Ω. The center frequency of the resulting
RF signal is equal to the LO signal frequency. The LO input
drives a phase shifter which splits the LO signal into in-
phase and quadrature LO signals. These LO signals are then
applied to on-chip buffers which drive the up-conversion
mixers. In most applications, the LOP input is driven by
the LO source via an optional matching network, while
the LOM input is terminated with 50Ω to RF ground via
a similar optional matching network. The RF output is
single-ended and internally 50Ω matched.
Baseband Interface
The circuit is optimized for a common mode voltage of
0.5V which should be externally applied. The baseband
pins should not be left fl oating because the internal
PNPs base current will pull the common mode voltage
higher than the 0.6V limit. This condition may damage
the part. In shut-down mode, it is recommended to have
a termination to ground or to a 0.5V source with a value
lower than 1kΩ. The PNPs base current is about –68μA
in normal operation.
The baseband inputs (BBPI, BBMI, BBPQ, BBMQ) present
a single-ended input impedance of about –7.4kΩ each.
Because of the negative input impedance, it is important
to keep the source resistance at each baseband input low
enough such that the parallel value remains positive vs
baseband frequency. At each of the four baseband inputs, a
capacitor of 4pF in series with 30Ω is connected to ground.
This is in parallel with a PNP emitter follower (see Figure 1).
The baseband bandwidth depends on the source impedance.
For a 25Ω source impedance, the baseband bandwidth
(–1dB) is about 300MHz. If a 5.6nH series inductor is
APPLICATIONS INFORMATION
inserted in each of the four baseband connections, the
–1dB baseband bandwidth increases to about 800MHz.
It is recommended to include the baseband input impedance
in the baseband lowpass fi lter design. The input impedance
of each baseband input is given in Table 1.
Table 1. Single-Ended BB Port Input Impedance vs Frequency
for EN = High and VCMBB = 0.5VDC
FREQUENCY
(MHz)
BB INPUT
IMPEDANCE
REFLECTION COEFFICIENT
MAG ANGLE
0.1 –10578 – j263 1.01 –0.02
1 –8436 – j1930 1.011 –0.15
2 –6340 – j3143 1.013 –0.36
4 –3672 – j3712 1.014 –0.78
8 –1644 – j2833 1.015 –1.51
16 –527 – j1765 1.016 –2.98
30 –177 – j1015 1.017 –5.48
60 –45.2 – j514 1.017 –11
100 –13.2 – j306 1.014 –18.5
140 –0.2 – j219 1 –25.7
200 4.5 – j151 0.982 –36.6
300 10.4 – j99.4 0.921 –52.9
400 12.3 – j72.4 0.854 –68.2
500 14.7 – j57.5 0.780 –79.9
600 15.5 – j46.3 0.720 –91.4
The baseband inputs should be driven differentially;
otherwise, the even-order distortion products may degrade
the overall linearity performance. Typically, a DAC will
Figure 1. Simplifi ed Circuit Schematic
of the LTC5598 (Only I-Half is Drawn)
BBPI
BBMI
GND
LOMI LOPI
GNDRF
RF
FROM
Q
55682 F01
30Ω
30Ω
4pF
4pF
LTC5598
VCC1 = 5V
VCMBB = 0.5VDC
VCC2 = 5V
BUFFER
LTC5598
10
5598f
APPLICATIONS INFORMATION
be the signal source for the LTC5598. A reconstruction
lter should be placed between the DAC output and the
LTC5598’s baseband inputs.
In Figure 2 a typical baseband interface is shown, using
a fi fth-order lowpass ladder fi lter.
in Table 3. In Table 4 and 5, the LOP port input impedance
is given for EN = High and Low under the condition of
PLO = 10dBm. Figure 4 shows the LOP port return loss
for the standard demo board (schematic is shown in
Figure 10) when the LOM port is terminated with 50Ω to
GND. The values of L1, L2, C9 and C10 are chosen such
that the bandwidth for the LOP port of the standard demo
board is maximized while meeting the LO input return loss
S11, ON < –10dB.
Table 2. LOP Port Input Impedance vs Frequency for EN = High
and PLO = 0dBm (LOM AC Coupled With 50Ω to Ground).
FREQUENCY
(MHz)
LO INPUT
IMPEDANCE
REFLECTION COEFFICIENT
MAG ANGLE
0.1 333 – j10.0 0.739 –0.5
1 318 – j59.9 0.737 –3.3
2 285 – j94.7 0.728 –6.1
4 227 – j120 0.708 –10.6
8 154 – j124 0.678 –18.7
16 89.9 – j95.4 0.611 –33.0
30 60.4 – j60.6 0.420 –41.3
60 54.8 – j35.8 0.489 –51.5
100 43.6 – j24.4 0.261 –89.9
200 37.9 – j17.3 0.235 –113
400 31.8 – j12.4 0.266 –137
800 23.6 – j8.2 0.374 –156
1000 19.8 – j5.5 0.437 –165
1250 16.0 – j1.8 0.515 –175
1500 13.6 + j2.4 0.574 174
1800 12.1 + j7.3 0.618 162
BBPI
R2A
1007
L2A
L2B
GND
0.5VDC
0.5VDC
C3
R2B
1007
BBMI
5598 F02
R1A
1007
R1B
1007
L1A
L1B
C2
C1
DAC
0mA TO 20mA
0mA TO 20mA
Figure 2. Baseband Interface with 5th Order Filter
and 0.5VCM DAC (Only I Channel is Shown)
For each baseband pin, a 0 to 1V swing is developed
corresponding to a DAC output current of 0mA to 20mA.
The maximum sinusoidal single side-band RF output power
is about +7.3dBm for full 0V to 1V swing on each I- and
Q- channel baseband input (2VPP, DIFF).
LO Section
The internal LO chain consists of poly-phase phase shifters
followed by LO buffers. The LOP input is designed as a
single-ended input with about 50Ω input impedance. The
LOM input should be terminated with 50Ω through a DC
blocking capacitor.
The LOP and LOM inputs can be driven differentially in
case an exceptionally low large-signal output noise fl oor
is required (see graph 5598 G20b).
A simplifi ed circuit schematic for the LOP, LOM, CAPA
and CAPB inputs is given in Figure 3. A feedback path is
implemented from the LO buffer outputs to the LO inputs
in order to minimize offsets in the LO chain by storing the
offsets on C5, C7 and C8 (see Figure 10). Optional capacitor
C8 improves the image rejection below 100MHz (see
graph 5598 G20a). Because of the feedback path, the input
impedance for PLO = 0dBm is somewhat different than
for PLO = 10dBm for the lower part of the operating
frequency range. In Table 2, the LOP port input impedance
vs frequency is given for EN = High and PLO = 0dBm. For
EN = Low and PLO = 0dBm, the input impedance is given
VCC1
2.8V
(4.3V IN
SHUTDOWN)
LOP LOM
CAPA
CAPB
5598 F03
+
Figure 3. Simplifi ed Circuit Schematic for the
LOP, LOM, CAPA and CAPB Inputs.
LTC5598
11
5598f
APPLICATIONS INFORMATION
Table 3. LOP Port Input Impedance vs Frequency for EN = Low
and PLO = 0dBm (LOM AC Coupled with 50Ω to Ground).
FREQUENCY
(MHz)
LO INPUT
IMPEDANCE
REFLECTION COEFFICIENT
MAG ANGLE
0.1 1376 – j84.4 0.930 –0.3
1 541 – j1593 0.980 –3.2
2 177 – j877 0.977 –6.2
4 75.3 – j452 0.965 –12.2
8 49.2 – j228 0.918 –23.6
16 43.3 – j117 0.784 –41.8
30 40.7 – j64.1 0.585 –62.7
60 39.1 – j34.6 0.382 –86
100 37.6 – j23.8 0.296 –102
200 33.4 – j16.4 0.275 –124
400 27.5 – j11.1 0.320 –145
800 20.1 – j4.9 0.430 –167
1000 17.5 – j1.6 0.479 –176
1250 15.3 + j2.1 0.532 175
1500 13.8 + j5.6 0.571 167
1800 12.8 + j9.7 0.605 157
Table 4. LOP Port Input Impedance vs Frequency for EN = High
and PLO = 10dBm (LOM AC Coupled with 50Ω to Ground).
FREQUENCY
(MHz)
LO INPUT
IMPEDANCE
REFLECTION COEFFICIENT
MAG ANGLE
0.1 360-j14.8 0.756 –0.7
1 349-j70.5 0.758 –3.2
2 311-j113 0.752 –6.0
4 240-j148 0.739 –10.9
8 148-j146 0.715 –19.7
16 81.3-j102 0.641 –35.2
30 55.4-j61.6 0.506 –54.7
60 45.7-j34.4 0.341 –77.4
100 43.0-j24.1 0.261 –91.6
200 38.0-j17.1 0.234 –114
400 32.0-j12.5 0.265 –137
800 23.6-j8.3 0.374 –156
1000 19.8-j5.6 0.438 –165
1250 15.8-j1.7 0.520 –176
1500 13.5+j2.4 0.575 174
1800 12.0+j7.3 0.619 162
Table 5. LOP Port Input Impedance vs Frequency for EN = Low
and PLO = 10dBm (LOM AC Coupled with 50Ω to Ground).
FREQUENCY
(MHz)
LO INPUT
IMPEDANCE
REFLECTION COEFFICIENT
MAG ANGLE
0.1 454 – j30.5 0.802 –0.9
1 423 – j102 0.780 –3.2
2 365 – j165 0.796 –5.9
4 249 – j219 0.798 –11.4
8 117 – j179 0.781 –22.4
16 60.7 – j106 0.697 –40.3
30 43.1 – j62.0 0.559 –62.4
60 38.6 – j34.6 0.386 –86.7
100 37.6 – j23.9 0.297 –102
200 33.5 – j16.5 0.274 –124
400 27.6 – j11.3 0.319 –145
800 20.2 – j5.1 0.429 –166
1000 17.7 – j1.7 0.478 –175
1250 15.2 + j2.0 0.533 175
1500 13.9 + j5.4 0.570 167
1800 12.9 + j9.5 0.604 158
FREQUENCY (MHz)
1
RETURN LOSS (dB)
–10
–5
–15
–20
100
10 1000
–25
0
5598 F04
EN = LOW; PLO = 0dBm
EN = LOW; PLO = 10dBm
EN = HIGH; PLO = 0dBm
EN = HIGH; PLO = 10dBm
C9, C10: 2.2pF; L1, L2: 3.3nH;
C5, C7: 10nF
Figure 4. LOP Port Return Loss vs Frequency
for Standard Board (See Figure 10)
LTC5598
12
5598f
The LOP port return loss for the low end of the operating
frequency range can be optimized using extra 120Ω
terminations at the LO inputs (replace C9 and C10 with 120Ω
resistors, see Figure 10), and is shown in Figure 5.
The large-signal noise fi gure can be improved with a
higher LO input power. However, if the LO input power is
too large and causes internal clipping in the phase shifter
section, the image rejection can be degraded rapidly. This
clipping point depends on the supply voltage, LO frequency,
temperature and single-ended vs differential LO drive. At
fLO = 140MHz, VCC = 5V, T = 25°C and single-ended LO
drive, this clipping point is at about 16.6dBm. For 4.5V it
lowers to 14.6dBm. For differential drive with VCC = 5V it
is about 20dBm.
The differential LO port input impedance for EN = High
and PLO = 10dBm is given in Table 6.
Table 6. LOP - LOM Port Differential Input Impedance
vs Frequency for EN = High and PLO = 10dBm
FREQUENCY
(MHz)
LO DIFFERENTIAL
INPUT IMPEDANCE
0.1 642 – j25.7
1.0 626 – j112
2.0 572 – j204
4.0 429 – j305
8.0 222 – j287
16 102 – j181
30 64.2 – j104
60 50.9 – j58.9
100 46.2 – j40.2
200 37.4 – j28.6
400 28.3 – j19.4
800 20.0 – j10.6
1000 17.5 – j7.9
1250 16.6 – j2.7
1500 17.3 + j3.3
1800 20.6 + j10.2
RF Section
After upconversion, the RF outputs of the I and Q mixers are
combined. An on-chip buffer performs internal differential
to single-ended conversion, while transforming the output
impedance to 50Ω. Table 7 shows the RF port output
impedance vs frequency for EN = High.
APPLICATIONS INFORMATION
FREQUENCY (MHz)
1
RETURN LOSS (dB)
–5
–6
–10
–12
100
10 1000
–14
–4
5598 F05
EN = LOW; PLO = 0dBm
EN = LOW; PLO = 10dBm
EN = HIGH; PLO = 0dBm
EN = HIGH; PLO = 10dBm
C9, C10: 120Ω; L1, L2: 0Ω; C5, C7: 100nF
Figure 5. LO Port Return Loss vs Frequency
Optimized for Low Frequency (See Figure 10)
The LOP port return loss for the high end of the operating
frequency range can be optimized using slightly different
values for C9, C10 and L1, L2 (see Figure 6).
FREQUENCY (MHz)
1000
RETURN LOSS (dB)
–10
–20
–30
1400
1200 1600 1800 2000
–40
0
5598 F06
EN = LOW
EN = HIGH
C9, C10: 2.7pF; L1, L2: 1.5nH; C5, C7: 10nF
Figure 6. LO Port Return Loss vs Frequency
Optimized for High Frequency (See Figure 10)
The third-harmonic rejection on the applied LO signal is
recommended to be equal or better than the desired image
rejection performance since third-harmonic LO content can
degrade the image rejection severely. Image rejection is
not sensitive to second-harmonic LO content.
LTC5598
13
5598f
Table 7. RF Output Impedance vs Frequency for EN = High
FREQUENCY
(MHz)
RF OUTPUT
IMPEDANCE
REFLECTION COEFFICIENT
MAG ANGLE
0.1 59.0 – j0.6 0.083 –3.6
1 58.5 – j2.1 0.081 –12.7
2 57.3 – j3.5 0.076 –23.6
4 54.6 – j4.5 0.061 –41.6
8 51.9 – j3.6 0.040 –60.8
16 50.5 – j2.1 0.022 –74.8
30 50.2 – j1.1 0.011 –80
60 50 – j0.5 0.005 –86.5
100 50 – j0.2 0.002 –84.9
200 49.7 + j0 0.003 177.4
400 48.9 + j0.3 0.011 162
800 46.1 + j0.4 0.041 173.3
1000 44.5 + j0.2 0.058 178
1250 42.8 + j0 0.077 –179.7
1500 41.2 – j0.1 0.097 –179.4
1800 39.9 + j0.4 0.113 177.4
The RF port output impedance for EN = Low is given in Table
8. It is roughly equivalent to a 1.3pF capacitor to ground.
Table 8. RF Output Impedance vs Frequency for EN = Low
FREQUENCY
(MHz)
LO INPUT
IMPEDANCE
REFLECTION COEFFICIENT
MAG ANGLE
100 82.3 – j1223 0.995 –4.6
200 51.1 – j618 0.987 –9.2
400 35.3 – j310 0.965 –18.1
800 24.4 – j148 0.906 –36.6
1000 20.4 – j114 0.878 –46.4
1250 17 – j87 0.847 –58.4
1500 14.7 – j68 0.818 –70.7
1800 13.1 – j54 0.785 –84.3
In Figure 7 the simplifi ed circuit schematic of the RF
output buffer is drawn. A plot of the RF port return loss vs
frequency is drawn in Figure 8 for EN = High and Low.
Enable Interface
Figure 9 shows a simplifi ed schematic of the EN pin
interface. The voltage necessary to turn on the LTC5598
is 2V. To disable (shut down) the chip, the enable voltage
must be below 1V. If the EN pin is not connected, the chip
is enabled. This EN = High condition is assured by the 125k
on-chip pull-up resistor. It is important that the voltage at
the EN pin does not exceed VCC by more than 0.3V. Should
APPLICATIONS INFORMATION
RF
1k
1.8V
4.6V
48Ω
48Ω
1k
1V
2.8V
FROM
INTERNAL
MIXERS
INTERNAL
BIAS 5598 F07
VCC2
Figure 7. Simplifi ed Circuit Schematic of the RF Output
FREQUENCY (MHz)
1
RETURN LOSS (dB)
–10
–30
–20
–40
100 1000
10
–60
–50
0
5598 F08
EN = LOW
EN = HIGH
C6 = 220nF, SEE FIGURE 10
Figure 8. RF Port Return Loss vs Frequency
EN
VCC1
125k
50k
2V
3V
INTERNAL
ENABLE
CIRCUIT
5598 F09
Figure 9: EN Pin Interface
LTC5598
14
5598f
APPLICATIONS INFORMATION
Figure 12. Bottom Side of Evaluation Board
Figure 11. Component Side of Evaluation Board
C8
470nF
C6
10nF
C7
10nF
C5
10nF
C3
1nF
R2
5.6Ω
R1
C4
4.7μF
C1
4.7μF
C2
1nF
EN
GND
LOP
LOM
GND
CAPA
1
2
3
4
5
6
18
17
16
15
14
13
7 8 9 10 11 12 25
24 23 22 21 20 19
VCC2
GNDRF
RF
NC
GNDRF
NC
GND
GND
BBPI
BBMI
GND
VCC1
CAPB
GND
BBMQ
BBPQ
GND
GND
GND BBMQ
EN
BBPQ
RF OUT
U1
LTC5598
BOARD NUMBER: DC1455A
J6
J1
LOP
J3
LOM
J5
J7
J2
J4
GND
5598 F10
C10
2.2pF
C9
2.2pF
L1
3.3nH
L2
3.3nH
VCC
BBMI BBPI
Figure 10. Evaluation Circuit Schematic
this occur, the supply current could be sourced through
the EN pin ESD protection diodes, which are not designed
to carry the full supply current, and damage may result.
Evaluation Board
Figure 10 shows the evaluation board schematic. A good
ground connection is required for the exposed pad. If this
is not done properly, the RF performance will degrade.
Additionally, the exposed pad provides heat sinking for the
part and minimizes the possibility of the chip overheating.
Resistors R1 and R2 reduce the charging current in
capacitors C1 and C4 (see Figure 10) and will reduce
supply ringing during a fast power supply ramp-up in
case an inductive cable is connected to the VCC and GND
turrets. For EN = High, the voltage drop over R1 and R2
is about 0.15V. If a power supply is used that ramps up
slower than 10V/μs and limits the overshoot on the supply
below 5.6V, R1 and R2 can be omitted.
The LTC5598 can be used for base-station applications
with various modulation formats. Figure 13 shows a
typical application.
LTC5598
15
5598f
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no representa-
tion that the interconnection of its circuits as described herein will not infringe on existing patent rights.
PACKAGE DESCRIPTION
UF Package
24-Lead (4mm × 4mm) Plastic QFN
(Reference LTC DWG # 05-08-1697)
4.00 p 0.10
(4 SIDES)
NOTE:
1. DRAWING PROPOSED TO BE MADE A JEDEC PACKAGE OUTLINE MO-220 VARIATION (WGGD-X)—TO BE APPROVED
2. DRAWING NOT TO SCALE
3. ALL DIMENSIONS ARE IN MILLIMETERS
4. DIMENSIONS OF EXPOSED PAD ON BOTTOM OF PACKAGE DO NOT INCLUDE
MOLD FLASH. MOLD FLASH, IF PRESENT, SHALL NOT EXCEED 0.15mm ON ANY SIDE, IF PRESENT
5. EXPOSED PAD SHALL BE SOLDER PLATED
6. SHADED AREA IS ONLY A REFERENCE FOR PIN 1 LOCATION
ON THE TOP AND BOTTOM OF PACKAGE
PIN 1
TOP MARK
(NOTE 6)
0.40 p 0.10
2423
1
2
BOTTOM VIEW—EXPOSED PAD
2.45 p 0.10
(4-SIDES)
0.75 p 0.05 R = 0.115
TYP
0.25 p 0.05
0.50 BSC
0.200 REF
0.00 – 0.05
(UF24) QFN 0105
RECOMMENDED SOLDER PAD PITCH AND DIMENSIONS
0.70 p0.05
0.25 p0.05
0.50 BSC
2.45 p 0.05
(4 SIDES)
3.10 p 0.05
4.50 p 0.05
PACKAGE OUTLINE
PIN 1 NOTCH
R = 0.20 TYP OR
0.35 s 45o CHAMFER
Figure 13: 5MHz to 1600MHz Direct
Conversion Transmitter Application
90o
0o
LTC5598
NC
21
22
1
10
9
2, 5, 8, 11, 12,
19, 20, 23, 25
467
16
13, 15
14, 17
10nF
50Ω
3
18, 24
10nF 470nF
10nF
BASEBAND
GENERATOR
PA
RF = 5MHz
TO 1600MHz
1nF
x2 4.7μF
x2
EN
5V
V-I
V-I
I-CHANNEL
Q-CHANNEL
VCC
5598 F13
I-DAC
Q-DAC
VCO/SYNTHESIZER
APPLICATIONS INFORMATION
LTC5598
16
5598f
Linear Technology Corporation
1630 McCarthy Blvd., Milpitas, CA 95035-7417
(408) 432-1900 FAX: (408) 434-0507 www.linear.com
© LINEAR TECHNOLOGY CORPORATION 2009
LT 0509 • PRINTED IN USA
RELATED PARTS
PART NUMBER DESCRIPTION COMMENTS
Infrastructure
LT5514 Ultralow Distortion, IF Amplifi er/ADC Driver
with Digitally Controlled Gain
850MHz Bandwidth, 47dBm OIP3 at 100MHz, 10.5dB to 33dB Gain Control Range
LT5517 40MHz to 900MHz Quadrature Demodulator 21dBm IIP3, Integrated LO Quadrature Generator
LT5518 1.5GHz to 2.4GHz High Linearity Direct
Quadrature Modulator 22.8dBm OIP3 at 2GHz, –158.2dBm/Hz Noise Floor, 50Ω Single-Ended RF and LO
Ports, 4-Channel W-CDMA ACPR = –64dBc at 2.14GHz
LT5519 0.7GHz to 1.4GHz High Linearity Upconverting
Mixer 17.1dBm IIP3 at 1GHz, Integrated RF Output Transformer with 50Ω Matching,
Single-Ended LO and RF Ports Operation
LT5520 1.3GHz to 2.3GHz High Linearity Upconverting
Mixer 15.9dBm IIP3 at 1.9GHz, Integrated RF Output Transformer with 50Ω Matching,
Single-Ended LO and RF Ports Operation
LT5521 10MHz to 3700MHz High Linearity
Upconverting Mixer
24.2dBm IIP3 at 1.95GHz, NF = 12.5dB, 3.15V to 5.25V Supply, Single-Ended LO
Port Operation
LT5522 600MHz to 2.7GHz High Signal Level
Downconverting Mixer 4.5V to 5.25V Supply, 25dBm IIP3 at 900MHz, NF = 12.5dB, 50Ω Single-Ended RF
and LO Ports
LT5527 400MHz to 3.7GHz High Signal Level
Downconverting Mixer
IIP3 = 23.5dBm and NF = 12.5dBm at 1900MHz, 4.5V to 5.25V Supply, ICC = 78mA,
Conversion Gain = 2dB.
LT5528 1.5GHz to 2.4GHz High Linearity Direct
Quadrature Modulator 21.8dBm OIP3 at 2GHz, –159.3dBm/Hz Noise Floor, 50Ω, 0.5VDC Baseband
Interface, 4-Channel W-CDMA ACPR = –66dBc at 2.14GHz
LT5554 Broadband Ultra Low Distortion 7-Bit Digitally
Controlled VGA
48dBm OIP3 at 200MHz, 1.4nV/√Hz Input-Referred Noise, 2dB to 18dB Gain Range,
0.125dB Gain Step Size
LT5557 400MHz to 3.8GHz High Signal Level
Downconverting Mixer
IIP3 = 23.7dBm at 2600MHz, 23.5dBm at 3600MHz, ICC = 82mA at 3.3V
LT5560 Ultra-Low Power Active Mixer 10mA Supply Current, 10dBm IIP3, 10dB NF, Usable as Up- or Down-Converter.
LT5568 700MHz to 1050MHz High Linearity Direct
Quadrature Modulator 22.9dBm OIP3 at 850MHz, –160.3dBm/Hz Noise Floor, 50Ω, 0.5VDC Baseband
Interface, 3-Ch CDMA2000 ACPR = –71.4dBc at 850MHz
LT5571 620MHz - 1100MHz High Linearity Quadrature
Modulator
21.7dBm OIP3 at 900MHz, –159dBm/Hz Noise Floor, High-Ohmic 0.5VDC
Baseband Interface
LT5572 1.5GHz to 2.5GHz High Linearity Direct
Quadrature Modulator
21.6dBm OIP3 at 2GHz, –158.6dBm/Hz Noise Floor, High-Ohmic 0.5VDC Baseband
Interface, 4-Ch W-CDMA ACPR = –67.7dBc at 2.14GHz
LT5575 800MHz to 2.7GHz High Linearity Direct
Conversion I/Q Demodulator
50Ω, Single-Ended RF and LO Ports, 28dBm IIP3 at 900MHz, 13.2dBm P1dB,
0.04dB I/Q Gain Mismatch, 0.4° I/Q Phase Mismatch
LT5579 1.5GHz to 3.8GHz High Linearity
Upconverting Mixer
27.3dBm OIP3 at 2.14GHz, 9.9dB Noise Floor, 2.6dB Conversion Gain,
–35dBm LO Leakage
RF Power Detectors
LTC
®
5505 RF Power Detectors with >40dB Dynamic Range 300MHz to 3GHz, Temperature Compensated, 2.7V to 6V Supply
LTC5507 100kHz to 1000MHz RF Power Detector 100kHz to 1GHz, Temperature Compensated, 2.7V to 6V Supply
LTC5508 300MHz to 7GHz RF Power Detector 44dB Dynamic Range, Temperature Compensated, SC70 Package
LTC5509 300MHz to 3GHz RF Power Detector 36dB Dynamic Range, Low Power Consumption, SC70 Package
LTC5530 300MHz to 7GHz Precision RF Power Detector Precision VOUT Offset Control, Shutdown, Adjustable Gain
LTC5531 300MHz to 7GHz Precision RF Power Detector Precision VOUT Offset Control, Shutdown, Adjustable Offset
LTC5532 300MHz to 7GHz Precision RF Power Detector Precision VOUT Offset Control, Adjustable Gain and Offset
LT5534 50MHz to 3GHz Log RF Power Detector with
60dB Dynamic Range
±1dB Output Variation over Temperature, 38ns Response Time, Log Linear
Response
LTC5536 Precision 600MHz to 7GHz RF Power Detector
with Fast Comparator Output
25ns Response Time, Comparator Reference Input, Latch Enable Input,
–26dBm to +12dBm Input Range
LT5537 Wide Dynamic Range Log RF/IF Detector Low Frequency to 1GHz, 83dB Log Linear Dynamic Range
LT5538 3.8GHz Wide Dynamic Range Log Detector 75dB Dynamic Range, ±1dB Output Variation Over Temperature
LT5570 2.7GHz RMS Power Detector Fast Responding, up to 60dB Dynamic Range, ±0.3dB Accuracy Over Temperature
LT5581 40dB Dynamic Range RMS Detector 10MHz to 6GHz, ±1dB Accuracy Over Temperature, 1.4mA at 3.3V Supply