OPTDELECTRONICS E DIMENSIONS i" 420 (10.67) b+. 328 (8.33) 025 (0.64) 015 (0.38) LA) 062 (1.57) R 4PLCS Tag Yo NOM (kK) REFLECTIVE ( SURFACE 226 (5,74) -t tL a1 E) C C 150 (3.81) 150 (3.81) NOM MIN 300 (7.62) 603 (15.32) 200 (5.08) |_| 373 (9.47) ra mts | = OPB703 OPB705 OPB704 (C) COLLECTOR (E) EMITTER (K) CATHODE (A) ANODE ST2154 NOTES: 4. CATHODE AND EMITTER LEADS ARE .050 NOM SHORTER THAN ANODE AND COLLECTOR LEADS. 2. DIMENSIONS ARE IN INCHES (mm). 3. TOLERANCE IS +.010 (.25) UNLESS OTHERWISE SPECIFIED. OPB703 - IR TRANSPARENT DUST COVER OPB704 - IR TRANSPARENT DUST COVER OPB705 - OFFSET LENS REFLECTIVE OBJECT SENSORS OPB703/0PB704/OPB705 The OPB703, OPB704, and OPB705 consist of an infrared emitting diode and an NPN silicon phototransistor mounted side by side on a converging optical axis in a black plastic housing. The phototransistor responds to radiation from the emitting diode only when a reflective object passes within its field of view. The area of the optimum response approximates a circle .200" in diameter. ' Phototransistor output. High Sensitivity. Low cost plastic housing. OPB703/OPB704, dust cover, lens. OPB705, offset lens.OPTOELECTRONICS SLOTTED OPTICAL SWITCH Storage Temperature 40C to + 85C Operating Temperature -40C to + 85C Soldering: Lead Temperature (Iron) 0.0... cece eee tt rere renee renter ee certs 240C for 5 sec. *? Lead Temperature (FIOW) ..0. 22... c eee enter eens erent ener ert ees 260C for 10 sec. ?? INPUT DIODE Continuous Forward Current ..... 0.22. c cece tn renner errr rere terre serene ss 50 mA Reverse Voltage 0... e cece eter ttre eter rere etter ree eree errs sss cress 5.0 Volts Power Dissipation 0.0.20... 0202 eee terres ern ee nee n nner eee tr esse cesses ess 100 mw" OUTPUT TRANSISTOR Collector-Emitter Voltage 22... cece cere eer renee ner r nnr ese crr sree errr e en rrtt gers ss 30 Volts Emitter-Collector Voltage .... 6... c ccc cece en eter nett eee er nnn ercr nares ener srs 5.0 Volts Collector Current oo... 0. cece ccc ee tenet n ener een entre rarer e sere nner rence tence ness 25 mA Power Dissipation ......... 0... 00e eee eter rere ee ere sseseessrrsrnnrseceseeeerssss ss 100 mw RI TICS | PARAI SYMBOL. - TEST CONDITIONS INPUT DIODE Forward Voltage VE _ 1.70 Vv I = 40mA Reverse Leakage Current la _ 100 BA Va = 2.0V OUTPUT TRANSISTOR Emitter-Collector Breakdown BV eco 5 Vv I. = 100 vA, Ee = 0 Collector-Emitter Breakdown BVceo 30 _ Vv c = 100 pA, Ee = 0 Collector-Emitter Leakage leeo _ 100 nA Vee = 10.0 V, Ee = 0 COUPLED On-State Collector Current OPB703 leiow: 200 pA |, = 40 MA, Vcc = 5 V, D = .150" OPB704 lewony 200 pA |. = 40 MA, Vee = 5 V, D = .150" ") OPB705 locony 100 pA |. = 40 mA, Vee = 5 V, D = .150" 5* Crosstalk lox _ 20 uA |, = 40 mA, Vee = SV 1. Derate power dissipation linearly 1.67 mW/C above 25C. 2. RMA flux is recommended. 3. Methanol or Isopropyl alcohols are recommended as cleaning agents. 4. Soldering iron tip ie" (1.6 mm) from housing. 5. Dis the distance from the assembly face to the reflective surface. 6. Measured using Eastman Kodak neutral test card with 90% diffused reflecting surface. 7. - Cross talk is the photocurrent measured with current to the input diode and no reflective surface.