High Power PIN Diode
50 MHz - 12 GHz
Rev. V3
MADP-011029-14150
1
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
1
Features
3 Terminal LPF Broadband Shunt Structure
50 MHz - 12 GHz Broadband Frequency
>100 W Peak Power Handling
< 0.1 dB Shunt Insertion Loss
> 25 dB Shunt Isolation
< 20°C/W Thermal Resistance
Lead-Free 1.5 x 1.2 mm 6-lead TDFN Package
RoHS* Compliant and 260°C Reflow Compatible
Description
The MADP-011029 is a lead-free 1.5 x 1.2 mm
TDFN surface mount plastic package that provides
both low and high signal frequency operation from
50 MHz to 12 GHz. The higher breakdown voltage
and lower thermal resistance of the PIN diode
provides peak power handling in excess of 100 W.
This device is ideally suitable for usage in higher
incident power switches, phase shifters, attenuators,
and limiter microwave circuits over a broad
frequency where higher performance surface mount
diode assemblies are required.
Ordering Information1,2
Part Number Package
MADP-011029-14150T 3000 piece reel
MADP-011029-000SMB Sample board
* Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.
Functional Schematic
Pin Configuration3
Pin No. Pin Name Description
1 RFIN RF Input
2 GND Ground
3 GND Ground
4 GND Ground
5 GND Ground
6 RFOUT RF Output
7 Paddle4 Ground
3. MACOM recommends connecting unused package pins to
ground.
4. The exposed pad centered on the package bottom must be
connected to RF, DC, and thermal ground.
1. Reference Application Note M513 for reel size information.
2. All RF Sample boards include 5 loose parts.
GND
GND
RFIN
GND
GND
1
3
2
4
5
6RFOUT
7
High Power PIN Diode
50 MHz - 12 GHz
Rev. V3
MADP-011029-14150
2
2
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
2
Electrical Specifications: TA = +25°C
Absolute Maximum Ratings9,10
Parameter Absolute Maximum
DC Forward Voltage @
+250 mA 1.2 V
DC Forward Current 250 mA
DC Reverse Voltage |-400 V|
Junction Temperature +175°C
Operating Temperature -65°C to +125°C
Storage Temperature -65°C to +150°C
9. Exceeding any one or combination of these limits may cause
permanent damage to this device.
10. MACOM does not recommend sustained operation near these
survivability limits.
Parameter Test Conditions Units Min. Typ. Max.
Forward Voltage + 50 mA DC V 0.7 0.9 1.1
Reverse Leakage Current -200 V DC nA — |- 20| |-1000|
Total Capacitance5 -50 V @ 1 GHz pF — 0.31 0.40
Series Resistance 6 +10 mA @ 1 GHz Ω — 1.5 1.9
Parallel Resistance6 -Vdc = -40 V, @ 100 MHz KΩ — 1000 —
Minority Carrier Lifetime +If = 10 mA / -Ir = -6 mA
(50% Control Voltage, 90% Output Voltage) µs — 1.0 2.0
CW Thermal Resistance
( Infinite Heat Sink at Thermal
Ground Plane)
I High = 4 A, I low = 10 mA @ 10 kHz ºC/W — 20 —
Power Dissipation7,8
( Infinite Heat Sink at Thermal
Ground Plane)
+If = 50 mA @ 1 GHz W — 7.5 —
Insertion Loss F = 1 GHz, -Vdc = -10 V dB — 0.1 —
Isolation F = 1 GHz, +I bias = +10 mA dB 23 25 —
Handling Procedures
Please observe the following precautions to avoid
damage:
Static Sensitivity
These devices are sensitive to electrostatic
discharge (ESD) and can be damaged by static
electricity. Proper ESD control techniques should
be used when handling these Class 1B devices.
5. Ct ( Total Capacitance ) = CJ ( Junction Capacitance ) + Cp ( Parasitic Package Capacitance ).
6. Rs and Rp are measured on an HP4291A Impedance Analyzer.
7. De-rate power dissipation linearly by -50 mW/ºC to 0 W @ +175ºC: Pd (T) = Pd (+25ºC) - ΔP = Pd (+25º) - (50 mV/ºC) (ΔT).
8. PD = ΔTj / Θ or PD=(IF + IRF) 2 (Rs), where IF is the forward bias DC current and IRF is the forward bias RMS RF current.
High Power PIN Diode
50 MHz - 12 GHz
Rev. V3
MADP-011029-14150
3
3
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
3
500 - 5000 MHz Parts List12
PCB Layout
PCB Schematic
11. R1 is not needed when using the recommended ferrite FB1.
12. Max DC voltage with recommended components not to
exceed 100 V.
Part Value Case Style
C1 62 pF 0402
C2, C3 100 pF 0402
FB1 470 Ω @ 1 GHz 0402
R1 150 Ω 0402
L1 82 nH 0402
Devices may be soldered using standard
Pb60/Sn40, or RoHS compliant solders. Leads are
plated NiPdAuAg to ensure an optimum solderable
connection.
For recommended Sn/Pb and RoHS soldering profile
See Application Note M538 on the MACOM website.
Assembly Recommendations
Cleanliness and Storage
These devices should be handled and stored in a
clean environment. Ends of the device are
NiPdAuAg plated for greater solderability. Exposure
to high humidity (>80%) for extended periods may
cause the surface to oxidize. Caution should be
taken when storing devices for long periods.
General Handling
Device can be handled with tweezers or vacuum
pickups and are suitable for use with automatic
pick-and-place equipment.
High Power PIN Diode
50 MHz - 12 GHz
Rev. V3
MADP-011029-14150
4
4
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
4
Parallel Resistance vs. Reverse Voltage
Typical 1 GHz Parametric Curves
Series Resistance vs. Forward Current Capacitance vs. Reverse Voltage
10000
100000
1000000
010 20 30 40
RP (ohms)
Reverse Bias (V)
0.20
0.25
0.30
0.35
0.40
010 20 30 40
CT (pF)
Reverse Bias (V)
0.1
1
10
100
1000
0.001 0.010 0.100
RS (ohms)
Forward Bias (A)
High Power PIN Diode
50 MHz - 12 GHz
Rev. V3
MADP-011029-14150
5
5
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
5
Typical RF Small Signal Performance Curves
Return Loss
Insertion Loss
Isolation
-0.5
-0.4
-0.3
-0.2
-0.1
0.0
0 2 4 6 8 10 12
0 V
10 V
50 V
S21 (dB)
Frequency (GHz)
-35
-30
-25
-20
-15
-10
0 2 4 6 8 10 12
10 mA
25 mA
50 mA
S21 (dB)
Frequency (GHz)
-50
-40
-30
-20
-10
0
0 2 4 6 8 10 12
0 V
10 V
50 V
S11 (dB)
Frequency (GHz)
High Power PIN Diode
50 MHz - 12 GHz
Rev. V3
MADP-011029-14150
6
6
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
6
Lead-Free 1.5 x 1.2 mm 6-Lead TDFN†
† Reference Application Note S2083 for lead-free solder reflow recommendations.
Meets JEDEC moisture sensitivity level 1 requirements.
Plating is NiPdAuAg.
NOTES:
1. REFERENCE JEDEC MO-153-AB FOR ADDITIONAL DIMENSIONAL AND
TOLERANCE INFORMATION.
2. ALL DIMENSIONS SHOWN AS INCHES/MM.
High Power PIN Diode
50 MHz - 12 GHz
Rev. V3
MADP-011029-14150
7
7
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
7
Applications Section
B1
Θ = 90°Θ = 90°
B2
Θ = 90° Θ = 90°
J0
J1 J2
Schematic of High Power SP2T Shunt Switch using MADP-011029-14150T PIN Diodes
F = Octave Bandwidth from 1 to 12 GHz
Pinc = +40 dBm CW
Pinc = +50 dBm, 10 µs PW, 1% Duty
L = 11.807 / ( εeff ½ * F * 4 ) inches, θ = β * L = ( 2 π / λ ) * L = 90°
Frequency is in GHz, εeff is Effective Dielectric Constant of Transmission Line Medium
RF State B1 Bias B2 Bias
J0-J1 Low Loss &
J0-J2 Isolation -50 V @ 0 mA +1 V @ +20 mA
J0-J2 Low Loss &
J0-J1 Isolation +1 V @ +20 mA -50 V @ 0 mA
High Power PIN Diode
50 MHz - 12 GHz
Rev. V3
MADP-011029-14150
8
8
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
8
Applications Section
C1 C2
RFIN RFOUT
D1 D2 L1 D3
Schematic of 3 Stage Limiter using MADP-011029-14150T
F = 1000 - 8000 MHz
Pinc = +47 dBm CW
Pinc = +50 dBm, 10 µs P.W., 1% Duty
Part PN Case Style Description Quantity
D1 MADP-011029-14150T ODS-1415 Input PIN Diode 1
D2 MADL-011023-14150T ODS-1415 2nd Stage PIN Diode 1
D3 MADL-011023-14150T ODS-1415 3rd Stage PIN Diode 1
L1 33 nH 0402 RF Choke / DC Return 1
C1 27 pF 0402 DC Block 1
C2 27 pF 0402 DC Block 1
High Power PIN Diode
50 MHz - 12 GHz
Rev. V3
MADP-011029-14150
9
9
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
9
Microwave Model of MADP-011029-14150T
Parameter Value
Cpackage 8.0E-14 F
L bond = Ls 4.0E-10 H
Rs 0.9 Ω
Rp 5E+5 Ω
1 2
3
Cpkg/2 Cj Rj
Ls Ls
Cpkg/2
2 1
3
Rj = Rs (Forward Bias Current)
Rj = Rp (Reverse Bias Voltage)
