© by SEMIKRON B 11 – 49
SEMIPONT
®
4
Power Bridge Rectifiers
SKD 110
SKD 160
SKD
Features
•Robust plastic case with screw
terminals
•Large, isolated base plate
•Blocking voltage to 1800 V
•High surge cur rent s
•Easy chassis mounting
•UL recognized, file no. E 63 532
Typical Applications
•Three phase rectifiers for power
supplies
•Input rectifiers for variable
frequency drives
•Rectifiers for DC m ot or field
supplies
•Battery charger rectifiers
V
RSM
I
D
(T
case
= 100 °C)
V
RRM
110 A 160 A
200 V SKD 110/02 SKD 160/02
400 V SKD 110/04 SKD 160/04
800 V SKD 110/08 SKD 160/08
1200 V SKD 110/12 SKD 160/12
1400 V SKD 110/14 SKD 160/14
1600 V SKD 110/16 SKD 160/16
1800 V SKD 110/18* SKD 160/18*
Symbol Conditions SKD 110 SKD 160 Units
I
D
T
case
= 100 °C 110 160 A
T
amb
= 45 °C, chassis
1)
28 30 A
P1/200 70 75 A
T
amb
= 35 °C, P1/120 F 110 145 A
P3/120 F 123 146 A
I
FSM
T
vj
= 25 °C, 10 ms 1200 1800 A
T
vj
= 150 °C, 10 ms 1000 1500 A
i
2
tT
vj
= 25 °C, 8,3...10 ms 7200 16 200 A
2
s
T
vj
= 150 °C, 8,3...10 ms 5000 11 200 A
2
s
V
F
T
vj
= 25 °C; I
F
= 300 A 1, 9 1,65 V
V
(TO)
T
vj
= 150 °C 0,85 0,85 V
r
T
T
vj
= 150 °C43mΩ
I
RD
T
vj
= 25 °C; V
RD
= V
RRM
0,5 0,5 mA
T
vj
= 150 °C; V
RD
= V
RRM
56 mA
R
thjc
per diode 0,9 0,65 °C/W
total 0,15 0,11 °C/W
R
thch
total 0,03 °C/W
T
vj
– 40 . . . + 150 °C
T
stg
– 40 . . . + 125 °C
V
isol
a.c. 50...60 Hz; r.m .s.; 1 s / 1 min 3600 / 3000 V~
M
1
to heatsink SI units 5 ± 15 % Nm
US units 44 ± 15 % lb. in.
M
2
to terminals SI units 5 ± 15 % Nm
US units 44 ± 15 % lb. in.
w 270 g
Case G 37
1)
Painted metal sheet of minimu m 250 x 250 x 1 mm: R
thca
= 1,8 °C/W
* Available in limited quantities
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© by SEMIKRONB 11 – 50
http://store.iiic.cc/
© by SEMIKRON B 11 – 510898
Fig. 9 b Forward characteristics of a single diode Fig. 12 a Transient therma l im pedan ce vs. time
Fig. 12 b Transient thermal impedance vs. time
SKD110.xls-6
WV
=
WKW
&:
6.'
SKD160.xls-6
WV
=
WKW
&:
6.'
http://store.iiic.cc/
© by SEMIKRONB 11 – 52
http://store.iiic.cc/
