IGBT MODULE ( N series )
nn Features
• Square RBSOA
• Low Saturation Voltage
• Less Total Power Dissipation
• Improved FWD Characteristic
• Minimized Internal Stray Inductance
• Overcurrent Limiting Function (4~5 Times Rated Current)
nn Applications
• High Power Switching
• A.C. Motor Controls
• D.C. Motor Controls
• Uninterruptible Power Supply
nn Outline Drawing
nn Maximum Ratings and Characteristics
• Absolute Maximum Ratings ( Tc=25°C)
Items Symbols Ratings Units
Collector-Emitter Voltage V
CES
1200 V
Gate -Emitter Voltage V
GES
± 20 V
Continuous I
C
300
Collector 1ms I
C PULSE
600
Current Continuous -I
C
300
1ms -I
C PULSE
600
Max. Power Dissipation P
C
2100 W
Operating Temperature T
j
+150 °C
Storage Temperature T
stg
-40 ∼ +125 °C
Isolation Voltage A.C. 1min. V
is
2500 V
Mounting *1 3.5
Screw Torque Terminals *2 4.5 Nm
Terminals *3 1.7
Note: *1:Recommendable Value; 2.5 ∼ 3.5 Nm (M5) or (M6)
*2:Recommendable Value; 3.5 ∼ 4.5 Nm (M6)
*3:Recommendable Value; 1.3 ∼ 1.7 Nm (M4)
• Electrical Characteristics ( at Tj=25°C )
Items Symbols Test Conditions Min. Typ. Max. Units
Zero Gate Voltage Collector Current I
CES
V
GE
=0V V
CE
=1200V 4.0 mA
Gate-Emitter Leackage Current I
GES
V
CE
=0V V
GE
=± 20V 60 µA
Gate-Emitter Threshold Voltage V
GE(th)
V
GE
=20V I
C
=300mA 4.5 7.5 V
Collector-Emitter Saturation Voltage V
CE(sat)
V
GE
=15V I
C
=300A 3.3 V
Input capacitance C
ies
V
GE
=0V 48000
Output capacitance C
oes
V
CE
=10V 17400 pF
Reverse Transfer capacitance C
res
f=1MHz 15480
t
ON
V
CC
=600V 0.65 1.2
t
r
I
C
=300A 0.25 0.6
t
OFF
V
GE
=± 15V 0.95 1.5
t
f
R
G
=2.7Ω0.35 0.5
Diode Forward On-Voltage V
F
I
F
=300A V
GE
=0V 3.0 V
Reverse Recovery Time t
rr
I
F
=300A 350 ns
• Thermal Characteristics
Items Symbols Test Conditions Min. Typ. Max. Units
R
th(j-c)
IGBT 0.06
Thermal Resistance R
th(j-c)
Diode 0.17 °C/W
R
th(c-f)
With Thermal Compound 0.0125
n Equivalent Circuit
Turn-on Time
Turn-off Time µs
A
http://store.iiic.cc/
0 200 400 600
10
100
1000
tf
tr
toff
ton
Switching time vs. Collector current
VCC=600V, RG=2.7Ω, VGE=±15V, Tj=25°C
Switching time : t on, tr, toff, tf [nsec]
Collector current : IC [A]
0 1 2 3 4 5
0
200
400
600
Collector-Emitter voltage : VCE [V]
Collector current : I C [A]
8V
Collector current vs. Collector-Emitter voltage
Tj=125°C
012345
0
200
400
600
VGE= 20V, 15V, 12V, 10V
Collector current vs. Collector-Emitter voltage
Tj=25°C
Collector current : I
C
[A]
Collector-Emitter voltage : VCE [V]
8V
VGE= 20V, 15V, 12V, 10V
0 5 10 15 20 25
0
2
4
6
8
10
150A
300A
600A
Collector-Emitter vs. Gate-Emitter voltage
Tj=25°C
IC=
Collector-Emitter voltage :V CE [V]
Gate-Emitter voltage : VGE [V]
0 5 10 15 20 25
0
2
4
6
8
10
Collector-Emitter vs. Gate-Emitter voltage
Tj=125°C
150A
300A
600A
IC=
Collector-Emitter voltage V CE [V]
Gate-Emitter voltage : VGE [V]
0 200 400 600
10
100
1000
Switching time vs. Collector current
VCC=600V, RG=2.7Ω, VGE±15V, Tj=125°C
tf
tr
ton
toff
Switching time : t on, tr, toff, tf [nsec]
Collector current : IC [A]
http://store.iiic.cc/
0,001 0,01 0,1 1
0,001
0,01
0,1 IGBT
Diode
Transient thermal resistance
Thermal resistance : R th(j-c) [°C/W]
Pulse width : PW [sec]
0 500 1000 1500 2000 2500 3000 3500 4000
0
200
400
600
800
1000
800V
600V
VCC=400V
0
5
10
15
20
25
Dynamic input characteristics
Tj=25°C
Collector-Emitter voltage : V CE [V]
Gate charge : QG [nC]
1 10
100
1000
tf
tr
toff
ton
Switching time vs. R
G
VCC=600V, IC=300A, VGE=±15V, Tj=25°C
Switching time : t
on
, t
r
, t
off
, t
f
[nsec]
Gate resistance : RG [Ω]
0 1 2 3 4 5
0
200
400
600
Tj=125°C 25°C
Forward current vs. Forward voltage
VGE=OV
Forward current : I F [A]
Forward voltage : VF [V]
0 200 400 600
100
Irr 25°C
trr 25°C
trr 125°C
Irr 125°C
Reverse recovery characteristics
trr, Irr vs. IF
Reverse recovery current : I rr [A]
Reverse recovery time : t rr [nsec]
Forward current : IF [A]
0 200 400 600 800 1000 1200
0
500
1000
1500
2000
2500
3000
RBSOA (Repetitive pulse)
SCSOA
(non-repetitive pulse)
Reversed biased safe operating area
+VGE=15V, -VGE<15V, Tj<125°C, RG>2.7Ω
Collector current : I C [A]
Collector-Emitter voltage : VCE [V]
http://store.iiic.cc/
0 5 10 15 20 25 30 35
1
10
100
Cres
Coes
Cies
Capacitance vs. Collector-Emitter voltage
Tj=25°C
Capacitance : C ies, Coes, Cres [nF]
Collector-Emitter Voltage : VCE [V]
0 100 200 300 400 500 600
0
25
50
75
100
125
Err 25°C
Err 125°C
Switching loss vs. Collector current
VCC=600V, RG=2.7Ω , VGE=±15V
Switching loss : E on, Eoff, Err [mJ/cycle]
Collector Current : IC [A]
Eon 25°C
Eon 125°C
Eoff 25°C
Eoff 125°C
Fuji Electric GmbH Fuji Electric (UK) Ltd.
Lyoner Straße 26 Commonwealth House
2 Chalkhill Road Hammersmith
D-60528 Frankfurt/M London W6 8DW, UK
Tel.: 069 - 66 90 29 - 0 Tel.: 0181 - 233 11 30
Fax.:069 - 66 90 29 - 56 Fax.:0181 - 233 11 60
P.O. Box 702708-Dallas, TX 75370 Phone (972) 233-1589 Fax (972) 233-0481 www.collmer.com
http://store.iiic.cc/
