IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung High Power Infrared Emitter (850 nm) Lead (Pb) Free Product - RoHS Compliant SFH 4257 This data sheet is under PCN-revision (OS-PCN-2009-021-A2). Not to be used for design-in. PCN data sheet can be provided on request. Wesentliche Merkmale Features * Infrarot LED mit hoher Ausgangsleistung * Schwarz eingefarbtes TOPLED-Gehause * Verbesserte Abbildungseigenschaften durch Absorption der Seitenstrahlung * Kurze Schaltzeiten * High Power Infrared LED * Black coloured TOPLED-package * Improved imaging characteristics due to absorption of side emission * Short switching times Anwendungen Applications * Miniaturlichtschranken und Lichtschranken uber groe Entfernungen (bei Verwendung einer externen Optik) * Miniature and long distance photointerrupters (in combination with external optics) Sicherheitshinweise Safety Advices Je nach Betriebsart emittieren diese Bauteile hochkonzentrierte, nicht sichtbare InfrarotStrahlung, die gefahrlich fur das menschliche Auge sein kann. Produkte, die diese Bauteile enthalten, mussen gema den Sicherheitsrichtlinien der IEC-Normen 60825-1 und 62471 behandelt werden. Depending on the mode of operation, these devices emit highly concentrated non visible infrared light which can be hazardous to the human eye. Products which incorporate these devices have to follow the safety precautions given in IEC 60825-1 and IEC 62471. Typ Type Bestellnummer Ordering Code Strahlstarkegruppierung1) (IF = 100 mA, tp = 20 ms) Radiant Intensity Grouping1) Ie (mW/sr) SFH 4257 Q65110A2466 > 6.3 (typ. 7) 1) gemessen bei einem Raumwinkel = 0.01 sr / measured at a solid angle of = 0.01 sr 2012-03-15 1 SFH 4257 Grenzwerte (TA = 25 C) Maximum Ratings Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Betriebs- und Lagertemperatur Operating and storage temperature range Top , Tstg - 40 ... + 100 C Sperrspannung Reverse voltage VR 5 V Vorwartsgleichstrom Forward current IF 100 mA Stostrom, tp = 200 s, D = 0 Surge current IFSM 1 A Verlustleistung Power dissipation Ptot 180 mW 450 K/W 200 K/W Warmewiderstand Sperrschicht - Umgebung bei RthJA Montage auf FR4 Platine, Padgroe je 16 mm2 Thermal resistance junction - ambient mounted on PC-board (FR4), padsize 16 mm2 each Warmewiderstand Sperrschicht - Lotstelle bei RthJS Montage auf Metall-Block Thermal resistance junction - soldering point, mounted on metal block Kennwerte (TA = 25 C) Characteristics Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Wellenlange der Strahlung Wavelength at peak emission IF = 100 mA peak 860 nm Centroid-Wellenlange der Strahlung Centroid wavelength IF = 100 mA centroid 850 nm Spektrale Bandbreite bei 50% von Imax Spectral bandwidth at 50% of Imax IF = 100 mA 42 nm Abstrahlwinkel Half angle 60 Grad deg. Aktive Chipflache Active chip area A 0.09 mm2 2012-03-15 2 SFH 4257 Kennwerte (TA = 25 C) Characteristics (cont'd) Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Abmessungen der aktiven Chipflache Dimension of the active chip area LxB LxW 0.3 x 0.3 mm Schaltzeiten, Ie von 10% auf 90% und von 90% auf 10%, bei IF = 100 mA, RL = 50 Switching times, e from 10% to 90% and from 90% to 10%, IF = 100 mA, RL = 50 tr , tf 12 ns VF VF 1.5 (< 1.8) 2.4 (< 3.0) V V Sperrstrom Reverse current IR not designed for A reverse operation Gesamtstrahlungsfluss Total radiant flux IF = 100 mA, tp = 20 ms e typ 18 mW Temperaturkoeffizient von Ie bzw. e, TCI IF = 100 mA Temperature coefficient of Ie or e, IF = 100 mA - 0.5 %/K Temperaturkoeffizient von VF, IF = 100 mA Temperature coefficient of VF, IF = 100 mA TCV - 0.7 mV/K Temperaturkoeffizient von , IF = 100 mA Temperature coefficient of , IF = 100 mA TC + 0.3 nm/K Durchlassspannung Forward voltage IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 s 2012-03-15 3 SFH 4257 Strahlstarke Ie in Achsrichtung1) gemessen bei einem Raumwinkel = 0.01 sr Radiant Intensity Ie in Axial Direction at a solid angle of = 0.01 sr Bezeichnung Parameter Symbol Werte Values Einheit Unit SFH 4257-Q Strahlstarke Radiant intensity IF = 100 mA, tp = 20 ms Ie min Ie max 6.3 12.5 mW/sr mW/sr Strahlstarke Radiant intensity IF = 1 A, tp = 100 s Ie typ 60 mW/sr 1) Nur eine Gruppe in einer Verpackungseinheit (Streuung kleiner 2:1) / Only one group in one packing unit (variation lower 2:1) Abstrahlcharakteristik Radiation Characteristics Irel = f () 40 30 20 10 0 50 OHL01660 1.0 0.8 0.6 60 0.4 70 0.2 80 0 90 100 1.0 2012-03-15 0.8 0.6 0.4 0 20 40 60 80 4 100 120 SFH 4257 Relative Spectral Emission Irel = f () Radiant Intensity Single pulse, tp = 20 s OHF04135 100 OHR00883 120 F I e (100 mA) mA 100 80 10 Max. Permissible Forward Current IF = f (TA), RthJA = 450 K/W OHL01715 101 Ie % I rel Ie = f (IF) Ie 100 mA 0 80 5 R thjA = 450 K/W 60 10 60 -1 5 40 40 10-2 20 0 700 20 5 750 800 10-3 0 10 nm 950 850 0 5 10 1 5 10 2 IF Forward Current IF = f (VF) Single pulse, tp = 20 s IF Permissible Pulse Handling Capability IF = f (), TA = 25 C, duty cycle D = parameter OHL01713 0 10 A IF 1.2 A OHF02506 t tP D = TP 1.0 10 -1 IF T D= 0.005 0.01 0.02 0.033 0.05 0.1 0.2 0.5 1 0.8 5 0.6 10 -2 5 0.4 10 -3 5 10 -4 mA 10 3 0.2 0 0.5 1 1.5 2 2.5 V 3 VF 2012-03-15 0 -5 10 10-4 10-3 10-2 10-1 100 101 s 102 tp 5 0 20 40 60 80 100 C 120 TA SFH 4257 Mazeichnung Package Outlines 2.1 (0.083) 3.0 (0.118) 2.6 (0.102) 2.3 (0.091) 1.7 (0.067) 0.1 (0.004) (typ) 0.9 (0.035) 0.7 (0.028) 0.18 (0.007) Anode marking 0.12 (0.005) 3.7 (0.146) 3.3 (0.130) 1.1 (0.043) 0.5 (0.020) 3.4 (0.134) 3.0 (0.118) (2.4 (0.094)) 41 2.1 (0.083) 0.6 (0.024) 0.4 (0.016) GPLY6059 Mae in mm (inch) / Dimensions in mm (inch). Gehause / Package schwarz, klarer Verguss / black, resin clear colourless Brechungsindex Verguss: 1.53 / refractive index resin: 1.53 Anschlussbelegung Pin configuration siehe Zeichnung see drawing 2012-03-15 6 SFH 4257 Empfohlenes Lotpaddesign Recommended Solder Pad Design 4.5 (0.177) 2.6 (0.102) 1.5 (0.059) 1.5 (0.059) 4.5 (0.177) 2.6 (0.102) Padgeometrie fur verbesserte Warmeableitung Lotstopplack Solder resist Paddesign for improved heat dissipation Cu-Flache > 16 mm 2 Cu-area > 16 mm 2 OHLPY970 Mae in mm (inch) / Dimensions in mm (inch). 2012-03-15 7 SFH 4257 Lotbedingungen Soldering Conditions Reflow Lotprofil fur bleifreies Loten Reflow Soldering Profile for lead free soldering Vorbehandlung nach JEDEC Level 2 Preconditioning acc. to JEDEC Level 2 (nach J-STD-020C) (acc. to J-STD-020C) OHLA0687 300 Maximum Solder Profile Recommended Solder Profile Minimum Solder Profile C 255 C 240 C T 250 C 260 C +0 -5 C 245 C 5 C C 235 C +5 -0 C 217 C 10 s min 200 30 s max Ramp Down 6 K/s (max) 150 100 s max 120 s max 100 Ramp Up 3 K/s (max) 50 25 C 0 0 50 100 150 200 250 s 300 t Wellenloten (TTW) TTW Soldering (nach CECC 00802) (acc. to CECC 00802) OHLY0598 300 C T 10 s 250 Normalkurve standard curve 235 C ... 260 C Grenzkurven limit curves 2. Welle 2. wave 200 1. Welle 1. wave 150 ca 200 K/s 2 K/s 5 K/s 100 C ... 130 C 100 2 K/s 50 Zwangskuhlung forced cooling 0 0 50 100 150 200 t 2012-03-15 8 s 250 SFH 4257 Published by OSRAM Opto Semiconductors GmbH Leibnizstrae 4, D-93055 Regensburg www.osram-os.com (c) All Rights Reserved. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you - get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 2012-03-15 9