CPH6320
No.8208-1/4
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN8208
CPH6320
Features
•Low ON-resistance.
•Ultrahigh-speed switching.
•1.8V drive.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage VDSS --12 V
Gate-to-Source Voltage VGSS ±8V
Drain Current (DC) ID--3.5 A
Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% --14 A
Allowable Power Dissipation PDMounted on a ceramic board (1200mm2✕0.8mm) 1.6 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions min typ max Unit
Drain-to-Source Breakdown Voltage V(BR)DSS ID=--1mA, VGS=0 --12 V
Zero-Gate Voltage Drain Current IDSS VDS=--12V, VGS=0 --10 µA
Gate-to-Source Leakage Current IGSS VGS=±6.4V, VDS=0 ±10 µA
Cutoff Voltage VGS(off) VDS=--6V, ID=--1mA --0.3 --1.0 V
Forward T ransfer Admittance yfsVDS=--6V, ID=--1.7A 3.3 4.7 S
RDS(on)1 ID=--1.7A, VGS=--4.5V 75 98 mΩ
Static Drain-to-Source On-State Resistance
RDS(on)2 ID=--0.8A, VGS=--2.5V 110 155 mΩ
RDS(on)3 ID=--0.4A, VGS=--1.8V 150 225 mΩ
Input Capacitance Ciss VDS=--6V, f=1MHz 450 pF
Output Capacitance Coss VDS=--6V, f=1MHz 100 pF
Reverse T ransfer Capacitance Crss VDS=--6V, f=1MHz 85 pF
Turn-ON Delay Time td(on) See specified Test Circuit. 15 ns
Rise Time trSee specified Test Circuit. 90 ns
Turn-OFF Delay Time td(off) See specified Test Circuit. 62 ns
Fall T ime tfSee specified Test Circuit. 50 ns
Marking : JW Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
12805PE TS IM TA-100050
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
CPH6320
No.8208-2/4
Continued from preceding page. Ratings
Parameter Symbol Conditions min typ max Unit
Total Gate Charge Qg VDS=--6V, VGS=--4.5V, ID=--3.5A 6.5 nC
Gate-to-Source Charge Qgs VDS=--6V, VGS=--4.5V, ID=--3.5A 0.8 nC
Gate-to-Drain “Miller” Charge Qgd VDS=--6V, VGS=--4.5V, ID=--3.5A 2.0 nC
Diode Forward Voltage VSD IS=--3.5A, VGS=0 --0.9 --1.5 V
Package Dimensions Switching Time Test Circuit
unit : mm
2151A
0.05
0.9
0.7 0.2 1.6 0.60.6
0.95
123
654
2.8
0.2
2.9 0.15
0.4
1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain
SANYO : CPH6
PW=10µs
D.C.≤1%
P.G 50Ω
G
S
D
ID= --1.7A
RL=3.53Ω
VDD= --6V
VOUT
CPH6320
VIN
0V
--4.5V
VIN
50
100
150
200
250
300
0
--0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8
--0.5
--1.0
--1.5
--2.0
--2.5
--3.0
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
RDS(on) -- VGS
IT09181
0 --0.1
--0.5
--1.0
--1.5
--2.0
--2.5
--3.0
0
0
--0.2 --0.3 --0.4 --0.5
ID -- VDS
--1.5V
--2.5V
--1.8V
--4.5V
IT04325
ID -- VGS
VDS= --6V
IT04326
RDS(on) -- Ta
IT09182
0 --1 --2 --3 --4 --5 --6 --7 --8
50
100
150
200
250
Ta=25°C
--1.7A
ID= --0.8A
ID= --0.4A, VGS= --1.8V
ID= --0.8A, VGS= --2.5V
ID= --1.7A, VGS= --4.5V
--3.0V
--3.5V
VGS= --1.0V
25°C
--25
°C
Ta=75°C
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V Ambient Temperature, Ta -- °C
Gate-to-Source Voltage, VGS -- V
Drain Current, ID -- A
CPH6320
No.8208-3/4
--1.0 --10--0.1 23 57 2 23357
0
020 40
0.5
1.0
1.5
2.0
1.6
60 80 100 120 140 160
IT09176
--0.01
--10
--1.0
--0.1
2
3
5
7
2
3
5
7
2
3
5
7
3
2
IT09175
Operation in this
area is limited by RDS(on).
100ms
100
µ
s
DC operation
1ms
10ms
<10µs
IDP= --14A
ID= --3.5A
0 --2 --4 --6 --8 --10 --12
100
1000
7
5
3
2
7
5
3
--0.1 23 57 23 57
--1.0
VGS -- Qg
PD -- Ta
A S O
SW Time -- ID
VDD= --6V
VGS= --4.5V
td(on)
td(off)
tr
tf
IT04331
Ciss, Coss, Crss -- VDS
IT04329
--0.1 23 57 23 57
--1.0
1.0
10
7
5
7
5
3
2
3
2
100
10
7
5
3
2
5
3
2
yfs-- ID
VDS= --6V
75°C
Ta= --25°C
IT04330
--0.4 --0.6 --0.8 --1.0 --1.2
--0.1
--1.0
--10
7
5
3
2
7
5
3
2
IF -- VSD
VGS=0
f=1MHz
Ciss
Coss
Crss
IT04332
25
°C
--25
°C
25°C
Ta=75
°C
Total Gate Charge, Qg -- nC
Gate-to-Source Voltage, VGS -- V
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
Drain-to-Source Voltage, VDS -- V
Ciss, Coss, Crss -- pF
Drain Current, ID -- A
Switching Time, SW Time -- ns
Drain Current, ID -- A
Forward T ransfer Admittance,
yfs
-- S
Diode Forward Voltage, VSD -- V
Forward Current, IF -- A
Allowable Power Dissipation, PD -- W
Mounted on a ceramic board (1200mm
2
✕0.8mm)
Ambient Temperature, Ta -- °C
Ta=25°C
Single pulse
Mounted on a ceramic board (1200mm
2
✕0.8mm)
01234567
0
--0.5
--1.0
--1.5
--2.0
--2.5
--3.0
--3.5
--4.0
--4.5
IT09174
VDS= --6V
ID= --3.5A
CPH6320
No.8208-4/4
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer’s
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer’s products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of January, 2005. Specifications and information herein are subject
to change without notice.
PS
Note on usage : Since the CPH6320 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.