2SK3462
2010-02-05
1
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSV)
2SK3462
Switching Regulator, DC/DC Converter and
Motor Drive Applications
• 4 V gate drive
• Low drain-source ON-resistance: RDS (ON) = 1.2 Ω (typ.)
• High forward transfer admittance: |Yfs| = 2.2 S (typ.)
• Low leakage current: IDSS = 100 μA (VDS = 250 V)
• Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Symbol Rating Unit
Drain-source voltage VDSS 250 V
Drain-gate voltage (RGS = 20 kΩ) VDGR 250 V
Gate-source voltage VGSS ±20 V
DC (Note 1) ID 3
Drain current Pulse (t = 1 ms)
(Note 1)
IDP 6
A
Drain power dissipation (Tc = 25°C) PD 20 W
Single pulse avalanche energy
(Note 2)
EAS 36.2 mJ
Avalanche current IAR 3 A
Repetitive avalanche energy (Note 3) EAR 2 mJ
Channel temperature Tch 150 °C
Storage temperature range Tstg −55 to 150 °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristic Symbol Max Unit
Thermal resistance, channel to case Rth (ch-c) 6.25 °C/W
Thermal resistance, channel to ambient Rth (ch-a) 125 °C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 50 V, Tch = 25°C, L = 6.7 mH, IAR = 3 A, RG = 25 Ω
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
1.1 ± 0. 2
0.1 ± 0. 1
1.0 5 MAX.
2.3 ± 0. 15
5.2 ± 0. 2
0.8 M A X.
0.6 MA X.
9.5 ± 0. 3
1.2 M A X.
1.5 ± 0. 2
6.5 ± 0. 2
1
2
3
0.6 MA X.
5.5 ± 0. 2
0.6 ± 0. 15
2.3 ± 0. 2
2.3 ± 0. 15
1. G ATE
2. DRAIN
（HEAT SINK）
3. SOURSE
3
2
1
JEDEC ―
JEITA ―
TOSHIBA 2-7J1B
Weight: 0.36 g (typ.)
2SK3462
2010-02-05
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Electrical Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min Typ. Max Unit
Gate leakage current IGSS V
GS = ±16 V, VDS = 0 V ⎯ ⎯ ±10 μA
Drain cutoff current IDSS V
DS = 250 V, VGS = 0 V ⎯ ⎯ 100 μA
Drain-source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 250 ⎯ ⎯ V
Gate threshold voltage Vth V
DS = 10 V, ID = 1 mA 1.5 ⎯ 3.5 V
Drain-source ON-resistance RDS (ON) V
GS = 10 V, ID = 1.5 A ⎯ 1.2 1.7 Ω
Forward transfer admittance ⎪Yfs⎪ V
DS = 10 V, ID = 1.5 A 0.5 2.2 ⎯ S
Input capacitance Ciss ⎯ 267 ⎯
Reverse transfer capacitance Crss ⎯ 32 ⎯
Output capacitance Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
⎯ 98 ⎯
pF
Rise time tr ⎯ 5 ⎯
Turn-on time ton ⎯ 20 ⎯
Fall time tf ⎯ 5 ⎯
Switching time
Turn-off time toff
⎯ 30 ⎯
ns
Total gate charge Qg ⎯ 12 ⎯
Gate-source charge Qgs ⎯ 6 ⎯
Gate-drain charge Qgd
VDD ≈ 200 V, VGS = 10 V, ID = 3 A
⎯ 6 ⎯
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min Typ. Max Unit
Continuous drain reverse current
(Note 1)
IDR ⎯ ⎯ ⎯ 3 A
Pulse drain reverse current (Note 1) IDRP ⎯ ⎯ ⎯ 6 A
Forward voltage (diode) VDSF I
DR = 3 A, VGS = 0 V ⎯ ⎯ −2.0
V
Reverse recovery time trr ⎯ 125 ⎯ ns
Reverse recovery charge Qrr
IDR = 3 A, VGS = 0 V,
dIDR/dt = 100 A/μs ⎯ 470 ⎯ nC
Marking
RL = 67 Ω
0 V
10 V
VGS
ID = 1.5 A VOUT
4.7 Ω
Duty ≤ 1%, tw = 10 μs
VDD ≈ 100 V
K3462
Lot No.
Note 4
Part No.
(or abbreviation code)
Note 4: A line under a Lot No. identifies the indication of product Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental
matters such as the RoHS compatibility of Product. The RoHS is the Directive
2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the
restriction of the use of certain hazardous substances in electrical and electronic
e
q
ui
p
ment.
2SK3462
2010-02-05
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Forward transfer admittance ⎪Yfs⎪ (S)
Drain-source voltage VDS (V)
Drain-source voltage VDS (V)
ID – VDS
Drain current ID (A)
Drain-source voltage VDS (V)
ID – VDS
Drain current ID (A)
Gate-source voltage VGS (V)
ID – VGS
Drain current ID (A)
VDS – VGS
Drain current ID (A)
⎪Yfs⎪ – ID
Drain current ID (A)
Drain-source ON-resistance
RDS (ON) (Ω)
RDS (ON) − ID
6
Tc = −55°C
0
0
2
4
2 4 61 3 5
25
100
Common source
VDS = 10 V
Pulse test
1
3
5
25
Tc = −55°C
100
10
0.1
3
0.1 0.5 3 10
Common source
VDS = 10 V
Pulse test
1
5
0.3
0.5
10.3 5
0
2
4
6
0 10 20 30
VGS = 4 V
Common source
Tc = 25°C
Pulse test
4.5
5
5.5
6
8
10
15
0
0
4
6
10
12 20
Common source
Tc = 25°C
Pulse test
16
3A
2
8
48
ID = 1 A
Gate-source voltage VGS (V)
0.1
0.01
1
10
0.1 1 10
0.5
5
0.03 0.3 3
0.3
3
Common source
Tc = 25°C
VGS = 10 V
Pulse test
4.6
0
0
1
2
3
2 4 6
VGS = 4 V
4.2
Common source
Tc = 25°C
Pulse test
4.4
6
8
10
15
2SK3462
2010-02-05
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0
0 40 120 160 200
10
30
40
20
80
Drain power dissipation PD (W)
Case temperature Tc (°C)
PD – Tc
Gate threshold voltage Vth (V)
Case temperature Tc (°C)
Vth – Tc
0
−80 −40 0 40 80 120 160
1
2
3
4
5Common source
VDS = 10 V
ID = 1 mA
Pulse test
Gate-source voltage VGS (V)
Total gate charge Qg (nC)
Dynamic input/output characteristics
Drain-source voltage VDS (V)
0
0
100
150
250
15 25
Common source
ID = 3 A
Tc = 25°C
Pulse test
20
50
200
510
100
50 VDD = 200 V
0
10
15
25
5
20
Drain-source voltage VDS (V)
IDR – VDS
Drain reverse current IDR (A)
1
0.1
0−0.2 −0.4 −1.2
Common source
Tc = 25°C
Pulse test
−0.6 −0.8 −1.0 −1.4
VGS = 10 V
3
5
0, −1
10
100
Case temperature Tc (°C)
RDS (ON) – Tc
Drain-source ON-resistance RDS (ON) (Ω)
ID = 1 A
ID = 3 A
0
−80 −40 0 40 80 120 160
1
2
3
4
5 Common source
VGS = 10 V
Pulse test
Capacitance C (pF)
Drain-source voltage VDS (V)
Capacitance – VDS
Ciss
Coss
Crss
1000
0.1
100
10
1
1 10 1000.3 3 30
VGS = 0 V
f = 1 MHz
Tc = 25°C
2SK3462
2010-02-05
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0
25
20
40
60
100
80
50 75 100 125 150
EAS – Tch
Channel temperature (initial) Tch (°C)
Avalanche energy EAS (mJ)
−15 V
15 V
Test circuit Waveform
IAR
BVDSS
VDD V
DS
RG = 25 Ω
VDD = 50 V, L = 6.7 mH ⎟
⎟
⎠
⎞
⎜
⎜
⎝
⎛
−
⋅⋅⋅= VDD
BVDSS
BVDSS
2
IL
2
1
ΕAS
Safe operating area
Drain-source voltage VDS (V)
Drain current ID (A)
ID max (pulsed) *
* Single nonrepetitive pulse
Tc = 25°C
Curves must be derated linearly
with increase in temperature.
VDSS max
ID max (continuous)
0.01
1
0.1
0.03
0.05
1
0.3
0.5
10
3
5
100
30
50
10 3 5 100 30 50 1000300 500
DC
100 μs *
1 ms *
rth − tw
Pulse width tw (s)
Normalized transient thermal impedance
rth (t)/Rth (ch-a)
1
0.1
0.00001 0.0001
10
0.001 0.01 0.1 1 10
Sin
g
le
p
ulse
0.2
0.1 0.05
0.02
0.01
T
PDM
t
Duty = t/T
Rth (ch-c) = 6.25°C/W
Duty = 0.5
0.01
0.03
0.05
0.3
0.5
3
5
2SK3462
2010-02-05
6
RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively “Product”) without notice.
• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the
Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of
all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their
own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such
design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,
diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating
parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR
APPLICATIONS.
• Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring
equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.
Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or
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• ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS
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or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.
• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of
noncompliance with applicable laws and regulations.
