AOD1N60/AOU1N60/AOI1N60
600V,1.3A N-Channel MOSFET
General Description Product Summary
700V@150℃
I
D
(at V
GS
=10V) 1.3A
R
DS(ON)
(at V
GS
=10V) < 9Ω
100% UIS Tested!
100% R
g
Tested!
Symbol
The AOD1N60 & AOU1N60 & AOI1N60 have been
fabricated using an advanced high voltage MOSFET
process that is designed to deliver high levels of
performance and robustness in popular AC-DC
applications.
By providing low R
DS(on)
, C
iss
and C
rss
along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
V
DS
UnitsParameter
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Maximum
AOI1N60
AOD1N60 AOU1N60
Top View
TO251
Bottom View
G
S
D
G
S
D
Top View
TO252
DPAK
Bottom View
D
D
S
S
Top View
Bottom View
TO251A
IPAK
G
S
D
G
S
D
G
D
S
V
DS
V
GS
I
DM
I
AR
E
AR
E
AS
Peak diode recovery dv/dt dv/dt
T
J
, T
STG
T
L
Symbol
R
θ
JA
R
θCS
R
θJC
Maximum Case-to-sink
A
Maximum Junction-to-Case
D,F
°C/W
°C/W
2.3
0.5
2.8
mJ
Avalanche Current
C
15Repetitive avalanche energy
C
Derate above 25
o
C
45
0.36
A1
Single pulsed avalanche energy
H
30 mJ
V/ns5
VDrain-Source Voltage 600
V±30Gate-Source Voltage
T
C
=100°C A
I
D
T
C
=25°C 1.3
0.8
4Pulsed Drain Current
C
Continuous Drain
Current
B
Junction and Storage Temperature Range -50 to 150 °C
Power Dissipation
B
P
D
Maximum Junction-to-Ambient
A,G
T
C
=25°C
-
55
Maximum
Thermal Characteristics
Units
°C/W45
Parameter Typical
W
W/
o
C
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds 300 °C
Rev 5: Aug 2011
www.aosmd.com Page 1 of 6
AOD1N60/AOU1N60/AOI1N60
Symbol Min Typ Max Units
600
700
BV
DSS
/∆TJ 0.6 V/
o
C
1
10
I
GSS
Gate-Body leakage current 100 nΑ
V
GS(th)
Gate Threshold Voltage 3 4.1 4.5 V
R
DS(ON)
7.5 9 Ω
g
FS
0.9 S
V
SD
0.65 1 V
I
S
Maximum Body-Diode Continuous Current 1 A
I
SM
4 A
C
iss
105 130 160 pF
C
oss
12 14.5 18 pF
C
rss
1.5 1.8 2.2 pF
R
g
2.9 3.5 5.3 Ω
Q
g
6.1 8 nC
Q
gs
1.3 2 nC
Q
gd
3.1 4 nC
t
D(on)
10 13 ns
t
r
6.7 13 ns
t
D(off)
20
26
ns
µA
V
Static Drain-Source On-Resistance V
GS
=10V, I
D
=0.65A
Reverse Transfer Capacitance
V
GS
=0V, V
DS
=25V, f=1MHz
SWITCHING PARAMETERS
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
Zero Gate Voltage Drain Current ID=250µA, VGS=0V
BV
DSS
I
DSS
Zero Gate Voltage Drain Current V
DS
=600V, V
GS
=0V
Gate Drain Charge
V
DS
=5V,I
D
=250µA
V
DS
=480V, T
J
=125°C
I
S
=1A,V
GS
=0V
V
DS
=40V, I
D
=0.65A
Forward Transconductance
Maximum Body-Diode Pulsed Current
Input Capacitance
Output Capacitance
DYNAMIC PARAMETERS
Turn-On Rise Time
Turn-Off DelayTime
V
GS
=10V, V
DS
=300V, I
D
=1A,
R
G
=25Ω
Gate resistance V
GS
=0V, V
DS
=0V, f=1MHz
Total Gate Charge
V
GS
=10V, V
DS
=480V, I
D
=1A
Turn-On DelayTime
Gate Source Charge
Drain-Source Breakdown Voltage I
D
=250µA, V
GS
=0V, T
J
=25°C
I
D
=250µA, V
GS
=0V, T
J
=150°C
Diode Forward Voltage
V
DS
=0V, V
GS
=±30V
t
D(off)
20
26
ns
t
f
11.5 23 ns
t
rr
114 137 ns
Q
rr
0.63 0.76 µC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Time I
F
=1.3A,dI/dt=100A/µs,V
DS
=100V
Body Diode Reverse Recovery Charge I
F
=1.3A,dI/dt=100A/µs,V
DS
=100V
Turn-Off DelayTime
G
Turn-Off Fall Time
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PDis based on TJ(MAX)=150°C in a TO252 package, using junction-to-case thermal resistance, and is more useful in
setting the upper dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C.
G.These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
H. L=60mH, IAS=1A, VDD=150V, RG=10Ω, Starting TJ=25°C
Rev 5: Aug 2011 www.aosmd.com Page 2 of 6
AOD1N60/AOU1N60/AOI1N60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
0.5
1
1.5
2
0 5 10 15 20 25 30
ID(A)
VDS (Volts)
Fig 1: On-Region Characteristics
VGS=5.5V
6V
10V
6.5V
0.1
1
10
2 4 6 8 10
ID(A)
VGS(Volts)
Figure 2: Transfer Characteristics
-
55
°
V
DS
=40V
25°C
125
°
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
0 0.5 1 1.5 2 2.5
RDS(ON) (Ω
Ω
Ω
Ω)
ID(A)
Figure 3: On
-
Resistance vs. Drain Current and Gate
VGS=10V
0
0.5
1
1.5
2
2.5
-100 -50 0 50 100 150 200
Normalized On-Resistance
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
VGS=10V
ID=0.5A
40
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.2 0.4 0.6 0.8 1.0
IS(A)
VSD (Volts)
Figure 6: Body-Diode Characteristics
25°C
125°C
ID=30A
25
°
125
°
Figure 3: On
-
Resistance vs. Drain Current and Gate
Voltage
0.8
0.9
1
1.1
1.2
-100 -50 0 50 100 150 200
BVDSS (Normalized)
TJ(oC)
Figure 5: Break Down vs. Junction Temperature
Rev 5: Aug 2011 www.aosmd.com Page 3 of 6
AOD1N60/AOU1N60/AOI1N60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
3
6
9
12
15
02468
VGS (Volts)
Qg(nC)
Figure 7: Gate-Charge Characteristics
VDS=480V
ID=1A
1
10
100
1000
0.1 1 10 100
Capacitance (pF)
VDS (Volts)
Figure 8: Capacitance Characteristics
Ciss
Coss
rss
0.01
0.1
1
10
1 10 100 1000
ID(Amps)
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
µ
s
10ms
1ms
0.1s
DC
RDS(ON)
limited
TJ(Max)=150°C
TC=25°C
100
µ
s
0
200
400
600
800
0.0001 0.001 0.01 0.1 1 10
Power (W)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
TJ(Max)=150°C
TC=25°C
Operating Area (Note F)
Case (Note F)
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Zθ
θ
θ
θJC Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=2.8C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse Ton
T
P
D
Rev 5: Aug 2011 www.aosmd.com Page 4 of 6
AOD1N60/AOU1N60/AOI1N60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
10
20
30
40
50
60
0 25 50 75 100 125 150
Power Dissipation (W)
TCASE (°C)
Figure 12: Power De-rating (Note B)
0.0
0.3
0.6
0.9
1.2
1.5
0 25 50 75 100 125 150
Current rating ID(A)
TCASE (°C)
Figure 13: Current De-rating (Note B)
0
100
200
300
400
0.0001 0.001 0.01 0.1 1 10 100 1000
Power (W)
Pulse Width (s)
TJ(Max)=150°C
TA=25°C
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note G)
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Zθ
θ
θ
θJA Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note G)
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=55°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse T
on
T
P
D
Rev 5: Aug 2011 www.aosmd.com Page 5 of 6
AOD1N60/AOU1N60/AOI1N60
-
+
VDC
Ig
Vds
DUT
-
+
VDC
Vgs
Vgs
10V
Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
VDC
DUT Vdd
Vgs
Vds
Vgs
RL
Rg
Vgs
Vds
10%
90%
Resistive Switching Test Circuit & Waveforms
t t
r
d(on)
t
on
t
d(off)
t
f
t
off
L
BV
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Vds
2
E = 1/2 LI
AR
AR
Vdd
Vgs
Id
Vgs
Rg
DUT
-
+
VDC
Vgs
Vds
Id
Vgs
BV
I
Ig
Vgs
-
+
VDC
DUT
L
Vds
Vgs
Vds
Isd
Isd
Diode Recovery Test Circuit & Waveforms
Vds -
Vds +
I
F
AR
DSS
E = 1/2 LI
dI/dt
I
RM
rr
Vdd
Vdd
Q = - Idt
t
rr
AR
AR
Rev 5: Aug 2011 www.aosmd.com Page 6 of 6