Copyright 2002 Semicoa Semiconductors, Inc.
Rev. E 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 1 of 2
www.SEMICOA.com
2N4029
Silicon PNP Transisto
r
Data Sheet
Description
Semicoa Semiconductors offers:
• Screening and processing per MIL-PRF-19500 Appendix E
• JAN level (2N4029J)
• JANTX level (2N4029JX) and
• JANTXV level (2N4029JV)
• QCI to the applicable level
• 100% die visual inspection per MIL-STD-750 method
2072 for JANTXV
• Radiation testing (total dose) upon request
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
Applications
• High-speed switching
• Low Power
• PNP silicon transistor
Features
• Hermetically sealed TO-18 metal can
• Also available in chip configuration
• Chip geometry 6700
• Reference document:
MIL-PRF-19500/512
Benefits
• Qualification Levels: JAN, JANTX, and
JANTXV
• Radiation testing available
Absolute Maximum Ratings TC = 25°C unless otherwise specified
Parameter Symbol Rating Unit
Collector-Emitter Voltage VCEO 80
Volts
Collector-Base Voltage VCBO 80
Volts
Emitter-Base Voltage VEBO 5
Volts
Collector Current, Continuous IC 1
A
Power Dissipation, TA = 25°C
Derate linearly above 37.5°C PT 0.5
3.08
W
mW/°C
Thermal Resistance RθJA 325 °C/W
Operating Junction Temperature TJ -65 to +200 °C
Storage Temperature TSTG -65 to +200 °C
Copyright 2002 Semicoa Semiconductors, Inc.
Rev. E 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 2 of 2
www.SEMICOA.com
2N4029
Silicon PNP Transisto
r
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at TA = 25°C
Off Characteristics
Parameter Symbol Test Conditions Min Typ Max Units
Collector-Base Cutoff Current
ICBO1
ICBO2
ICBO3
VCB = 80 Volts
VCB = 60 Volts
VCB = 60 Volts, TA = 150°C
10
10
25
µA
nA
µA
Collector-Emitter Cutoff Current ICEX V
CE = 60 Volts, VEB = 2 Volts 25 nA
Emitter-Base Cutoff Current IEBO1
IEBO2
VBE = 5 Volts
VBE = 3 Volts
10
25
µA
nA
On Characteristics Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%
Parameter Symbol Test Conditions Min Typ Max Units
DC Current Gain
hFE1
hFE2
hFE3
hFE4
hFE5
IC = 100 µA, VCE = 5 Volts
IC = 100 mA, VCE = 5 Volts
IC = 500 mA, VCE = 5 Volts
IC = 1 A, VCE = 5 Volts
IC = 500 mA, VCE = 5 Volts
TA = -55°C
50
100
70
25
30
300
Base-Emitter Saturation Voltage VBEsat1
VBEsat2
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
0.9
1.2 Volts
Collector-Emitter Saturation Voltage
VCEsat1
VCEsat2
VCEsat3
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
IC = 1 A, IB = 100 mA
0.15
0.50
1.00
Volts
Dynamic Characteristics
Parameter Symbol Test Conditions Min Typ Max Units
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio |hFE| VCE = 10 Volts, IC = 50 mA,
f = 100 MHz 1.5 6.0
Open Circuit Output Capacitance COBO VCB = 10 Volts, IE = 0 mA,
100 kHZ < f < 1 MHz 20 pF
Open Circuit Input Capacitance CIBO VEB = 0.5 Volts, IC = 0 mA,
100 kHZ < f < 1 MHz 80 pF
Switching Characteristics
Delay Time
Rise Time
td
tr IC = 500 mA, IB = 50 mA 15
25 ns
Storage Time
Fall Time
ts
tf IC = 500 mA, IB = 50 mA 175
35 ns