INTEGRATED CIRCUITS DIVISION
e3
Pb
DS-IX2127-R03 www.ixysic.com 1
Driver Characteristics
Features
•Floating Channel Designed for Bootstrap Operation
up to 600V
•Tolerant to Negative Transient Voltages; dV/dt
Immune
•Undervoltage Lockout
•3.3V, 5V, and 12V Input Logic Compatible
•Open-Drain FAULT Indicator Pin Shows
Over-Current Shutdown
•Output in Phase with the Input
Applications
•High-Speed Gate Driver
•Motor Drive Inverter
Description
The IX2127 is a high-voltage, high-speed power
MOSFET and IGBT driver. High-voltage level-shift
circuitry enables this device to operate up to 600V.
IXYS Integrated Circuits Division’s proprietary
common-mode design techniques provide stable
operation in high dV/dt noise environments.
An on-board comparator can be used to detect an
over-current condition in the driven MOSFET or IGBT
device, and then shut down drive to that device. An
open-drain output, FAULT
, indicates that an
over-current shutdown has occurred.
The gate driver output typically can source 250mA
and sink 500mA, which is suitable for fluorescent lamp
ballast, motor control, SMPS, and other converter
drive topologies.
The IX2127 is provided in 8-pin DIP and 8-pin SOIC
packages, and is available in Tape & Reel versions.
See ordering information below.
Ordering Information
IX2127 Block Diagram
Parameter Rating Units
VOFFSET 600 V
IO +/- (Source/Sink) 250/500 mA
VCSth 250 mV
tON / tOFF (Typical) 100 ns
Part Description
IX2127G 8-Pin DIP (50/Tube)
IX2127N 8-Pin SOIC (100/Tube)
IX2127NTR 8-Pin SOIC (2000/Reel)
VCC
IN
FAULT
COM
VB
HO
VS
CS
Buffer
Comparator
Delay
Undervoltage Lockout
Data LatchTransmitter
High-Low
Level Shift
Low-High
Level Shift ReceiverTransmitterData Latch
Receiver
Low Side High Side
QR
S
Enable
Enable
Blanking
Signal
+
_
VCC
IX2127
High-Voltage
Power MOSFET & IGBT Driver
INTEGRATED CIRCUITS DIVISION
IX2127
2www.ixysic.com R03
1. Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.1 Package Pinout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.2 Pin Description. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.3 Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.4 Recommended Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
1.5 General Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
1.6 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
1.7 Timing Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
2. Performance Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
3. Manufacturing Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
3.1 Moisture Sensitivity . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
3.2 ESD Sensitivity . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
3.3 Reflow Profile. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
3.4 Board Wash . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
3.5 Mechanical Dimensions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
INTEGRATED CIRCUITS DIVISION
IX2127
R03 www.ixysic.com 3
1 Specifications
1.1 Package Pinout
1.2 Pin Description
1.3 Absolute Maximum Ratings
Unless otherwise specified, ratings are provided at TA=25°C and all bias levels are with respect to COM.
Absolute maximum electrical ratings are at 25°C
Absolute maximum ratings are stress ratings. Stresses in
excess of these ratings can cause permanent damage to
the device. Functional operation of the device at conditions
beyond those indicated in the operational sections of this
data sheet is not implied.
1
2
3
45
6
7
8
VCC
IN
COM
FAULT
VB
HO
VS
CS
Pin# Name Description
1VCC Logic Supply Voltage
2IN
Logic Input
3FAULT
Fault Indicator Output
4COM
Logic Ground
5VSHigh Side Return
6CS
Comparator Input,
Over-Current Detect
7HO
High Side Gate Drive Output
8VBHigh Side Supply Voltage
Parameter Symbol Minimum Maximum Units
Logic Supply Voltage VCC -0.3 15
V
High Side Floating Supply Voltage VB-0.3 625
High Side Floating Offset Voltage VSVB-12 VB+0.3
Logic Input Voltage VIN -0.3 VCC+0.3
High Side Floating Output Voltage VHO VS-0.3 VB+0.3
Current Sense Voltage VCS VS-0.3 VB+0.3
FAULT Output Voltage VFLT -0.3 VCC+0.3
Allowable Offset Supply Voltage Transient dVS/dt -50V/ns
Package Power Dissipation
8-Lead DIP PD
-1
W
8-Lead SOIC - 0.625
Junction Temperature TJ-150
°C
Storage Temperature TS-55 150
INTEGRATED CIRCUITS DIVISION
IX2127
4www.ixysic.com R03
1.4 Recommended Operating Conditions
1.5 General Conditions
Typical values are characteristic of the device at 25°C
and are the result of engineering evaluations. They are
provided for information purposes only and are not
part of the manufacturing testing requirements.
Unless otherwise noted, all electrical specifications
are listed for TA=25°C.
Parameter Symbol Minimum Maximum Units
Logic Supply VCC 912
V
High Side Floating Supply VBVS+9 VS+12
High Side Offset Voltage VS-5 600
Logic Input Voltage VIN 0VCC
High Side Floating OutputVHO VSVB
Current Sense Signal Voltage VCS VSVS+5
FAULT Output Voltage VFLT 0VCC
Ambient Temperature T
A-40 +125 °C
INTEGRATED CIRCUITS DIVISION
IX2127
R03 www.ixysic.com 5
1.6 Electrical Characteristics
Unless otherwise specified, the test conditions are: VCC=VBS=12V; VCC, IN, FAULT, and Leakage voltages and
currents are referenced to COM; VB, HO, and CS voltages and currents are referenced to VS .
1.6.1 Power Supply Specifications
1.6.2 Gate Drive and Shutdown Specifications
* RGATE value must be 20 or greater.
1.6.3 Logic I/O Specifications
1.6.4 Thermal Specifications
Parameter Conditions Symbol Minimum Typical Maximum Units
Quiescent VCC Supply Current VIN=0V IQCC -280400
A
Quiescent VBS Supply Current VIN=0V IQBS - 500 1000
VBS UVLO Positive-Going Threshold -VBS_UV+ 6.8 7.7 8.6 V
VBS UVLO Negative-Going Threshold -VBS_UV- 6.3 7.2 8.1
Offset Supply Leakage Current VB=VS=600V ILKG --2
A
Parameter Conditions Symbol Minimum Typical Maximum Units
High Level Output Voltage, VB-VHO IHO=0A VOH --100
mV
Low Level Output Voltage, VHO IHO=0A VOL --100
Output Short Circuit Pulsed Current
VHO=0V, VIN=5V, PW<10s,
RGATE=20* (see Figure 1) IHO+ -200 -250 -
mA
VHO=12V, VIN=0V, PW<10s,
RGATE=20* (see Figure 1) IHO- 420 500 -
CS Input, Positive-Going Threshold VCC=9V to 12V VCS_TH+ 180 260 320 mV
“High” CS Bias Current VCS=3V ICS+ --1
A
VCS=0V ICS- ---1
Parameter Conditions Symbol Minimum Typical Maximum Units
Logic “1” Input Voltage VCC=9V to 12V VIH 3.0 - - V
Logic “0” Input Voltage VCC=9V to 12V VIL --0.8
Logic “1” Input Bias Current VIN=5V IIN+ -2.615
A
Logic “0” Input Bias Current VIN=0V IIN- ---1
FAULT On-Resistance - FLT, RON -72-
Parameter Conditions Symbol Minimum Typical Maximum Units
Thermal Resistance, Junction to Ambient:
8-Lead DIP -RJA
--125
°C/W
8-Lead SOIC --200
INTEGRATED CIRCUITS DIVISION
IX2127
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1.7 Timing Characteristics
Figure 1. Typical Connection Diagram
Parameter Conditions Symbol Minimum Typical Maximum Units
Turn-On Propagation Delay
VCC=VBS=12V,
CL=1nF,
T
A=25°C
ton -100200
ns
Turn-Off Propagation Delay toff -73200
Turn-On Rise Time tr-23130
Turn-Off Fall Time tf-2065
Start-Up Blanking Delay tblk 550 766 950
CS Shutdown Propagation Delay tCS -220360
CS to FLT Propagation Delay tFLT -236510
1
2
3
45
6
7
8
FAULT FAULT
VCC VCC
IN IN
COM
VB
HO
CS
VS
RGATE
INTEGRATED CIRCUITS DIVISION
IX2127
R03 www.ixysic.com 7
1.7.1 I/O Timing Diagram
1.7.2 Switching Time Waveforms
1.7.3 Startup Blanking Time Waveforms
1.7.4 CS Shutdown Waveforms
1.7.5 CS to FLT Waveforms
IN
CS
FAULT
HO
50%
90%
10%
ton trtoff tf
IN
HO
50%
90%
IN
CS
t
blk
HO
FAULT
90%
CS
HO
VCS_TH+
tcs
90%
CS
FAULT
VCS_TH+
tflt
INTEGRATED CIRCUITS DIVISION
IX2127
8www.ixysic.com R03
2 Performance Data
VCC Supply Voltage (V)
9.0 9.5 10.0 10.5 11.0 11.5 12.0
IQCC (μA)
0
50
100
150
200
250
Quiescent VCC Supply Current IQCC
vs. Voltage
Temperature (ºC)
-50 -25 0 25 50 75 100 125
Threshold UVLO+ (V)
0
2
4
6
8
10
VBS Undervoltage Lockout
Positive-Going Threshold UVLO+
vs. Temperature
Temperature (ºC)
-50 -25 0 25 50 75 100 125
IQCC (μA)
0
50
100
150
200
250
300
Quiescent VCC Supply Current IQCC
vs. Temperature
Temperature (ºC)
-50 -25 0 25 50 75 100 125
IQBS (μA)
0
100
200
300
400
500
Quiescent VBS Supply Current IQBS
vs. Temperature
Temperature (ºC)
-50 -25 0 25 50 75 100 125
Threshold UVLO- (V)
VBS Undervoltage Lockout
Negative-Going Threshold UVLO-
vs. Temperature
0
2
4
6
8
10
VCC Supply (V)
Input Voltage (V)
Logic "1" Input Threshold Voltage
vs. VCC
9.0 9.5 10.0 10.5 11.0 11.5 12.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VCC Supply Voltage (V)
9.0 9.5 10.0 10.5 11.0 11.5 12.0
Input Voltage (V)
Logic "0" Input Threshold Voltage
vs. VCC
0.0
0.5
1.5
2.5
3.0
2.0
1.0
Temperature (ºC)
-50 -25 0 25 50 75 100 125
Input Voltage (V)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Logic "1" Input Threshold Voltage
vs. Temperature
(VCC=12V)
Temperature (ºC)
-50 -25 0 25 50 75 100 125
Input Voltage (V)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Logic "0" Input Threshold Voltage
vs. Temperature
(VCC=12V)
Temperature (ºC)
-50 -25 0 25 50 75 100 125
Threshold (mV)
0
50
100
150
200
250
300
350
CS Input Positive Going Threshold
vs. Temperature
(VCC=12V)
INTEGRATED CIRCUITS DIVISION
IX2127
R03 www.ixysic.com 9
Voltage (V)
9.0 9.5 10.0 10.5 11.0 11.5 12.0
Input Current (μA)
0
1
2
3
4
5
Logic "1" Input Current IIN+
vs. Voltage
V
BIAS
Supply Voltage (V)
9.0 9.5 10.0 10.5 11.0 11.5 12.0
Turn-On Delay Time (ns)
Turn-On Time vs. Supply Voltage
0
25
50
75
100
125
150
175
200
Supply Voltage (V)
9.0 9.5 10.0 10.5 11.0 11.5 12.0
Rise Time (ns)
0
25
50
75
100
125
150
175
200
Turn-On Rise Time
vs. Supply Voltage
Temperature (ºC)
-50 -25 0 25 50 75 100 125
Input Current (μA)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Logic "1" Input Current IIN+
vs. Temperature
Temperature (ºC)
-50 -25 0 25 50 75 100 125
Turn-On Time (ns)
0
25
50
75
100
125
150
175
200
Turn-On Time vs. Temperature
(VCC=VBS=12V)
Temperature (ºC)
-50 -25 0 25 50 75 100 125
Rise Time (ns)
0
50
100
150
200
Turn-On Rise Time vs. Temperature
(VCC=VBS=12V)
Voltage (V)
9.0 9.5 10.0 10.5 11.0 11.5 12.0
Input Current (μA)
-1.0
-0.5
0.0
0.5
1.0
Logic "0" Input Current IIN-
vs. Voltage
V
BIAS
Supply Voltage (V)
9.0 9.5 10.0 10.5 11.0 11.5 12.0
Turn-Off Delay Time (ns)
Turn-Off Time vs. Supply Voltage
0
25
50
75
100
125
150
175
200
Supply Voltage (V)
9.0 9.5 10.0 10.5 11.0 11.5 12.0
Turn-Off Fall Time (ns)
0
5
10
15
20
25
Turn-Off Fall Time
vs. Supply Voltage
Temperature (ºC)
-50 -25 0 25 50 75 100 125
Input Current (μA)
-1.0
-0.5
0.0
0.5
1.0
Logic "0" Input Current IIN-
vs. Temperature
Temperature (ºC)
-50 -25 0 25 50 75 100 125
Turn-Off Delay Time (ns)
0
25
50
75
100
125
150
175
200
Turn-Off Time vs. Temperature
(VCC=VBS=12V)
Temperature (ºC)
-50 -25 0 25 50 75 100 125
Turn-Off Fall Time (ns)
0
10
20
30
40
50
Turn-Off Fall Time vs. Temperature
(VCC=VBS=12V)
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IX2127
10 www.ixysic.com R03
Temperature (ºC)
-50 -25 0 25 50 75 100 125
Output Voltage (mV)
-10
0
10
20
30
40
50
60
70
80
90
100
High-Level Output Voltage VOH (VB-VHO)
vs. Temperature
VBIAS Voltage (V)
10.0 10.5 11.0 11.5 12.0
Output Source Current (mA)
Output Source Current vs. Voltage
(VCC=VBS=VBIAS, VIN=5V, PW≤10μs)
0
50
100
150
200
250
300
Ref. Fig. 1: RGATE=20Ω
V
BIAS
Voltage (V)
10.0 10.5 11.0 11.5 12.0
Output Sink Current (mA)
Output Sink Current
vs. V Bias Voltage
(VCC=VBS=VBIAS, VIN=0V, PW≤10μs)
0
100
200
300
400
500
600
Ref. Fig. 1: R
GATE
=20Ω
Temperature (ºC)
-50 -25 0 25 50 75 100 125
Output Voltage (mV)
-10
0
10
20
30
40
50
60
70
80
90
100
Low-Level Output Voltage VOL
vs. Temperature
Temperature (ºC)
-50 -25 0 25 50 75 100 125
Output Source Current (mA)
0
50
100
150
200
250
300
350
Output Source Current
vs. Temperature
(VCC=VBS=12V, VIN=5V, PW≤10μs)
Ref. Fig. 1: R
GATE
=20Ω
Temperature (ºC)
-50 -25 0 25 50 75 100 125
Output Sink Current (mA)
Output Sink Current
vs. Temperature
(VCC=VBS=12V, VIN=0V, PW≤10μs)
Ref. Fig. 1: R
GATE
=20Ω
0
100
200
300
400
500
600
Input Voltage (V)
9.0 9.5 10.0 10.5 11.0 11.5 12.0
Delay (ns)
Start-Up Blanking Delay
vs. Input Voltage
0
100
200
300
400
500
600
700
Input Voltage (V)
9.0 9.5 10.0 10.5 11.0 11.5 12.0
Delay (nS)
CS Shutdown Propagation Delay
vs. Input Voltage
0
50
100
150
200
250
Temperature (ºC)
-50 -25 0 25 50 75 100 125
Delay (ns)
0
100
200
300
400
500
600
700
800
Start-Up Blanking Delay
vs. Temperature
(VCC=VBS=12V)
Temperature (ºC)
-50 -25 0 25 50 75 100 125
Delay (ns)
0
50
100
150
200
250
300
CS Shutdown Propogation Delay
vs. Temperature
Temperature (ºC)
-50 -25 0 25 50 75 100 125
Delay (ns)
0
50
100
150
200
250
300
350
CS to FLT Propagation Delay
vs. Temperature
(VCC=VBS=12V)
INTEGRATED CIRCUITS DIVISION
IX2127
R03 www.ixysic.com 11
3 Manufacturing Information
3.1 Moisture Sensitivity
All plastic encapsulated semiconductor packages are susceptible to moisture ingression. IXYS Integrated
Circuits Division classified all of its plastic encapsulated devices for moisture sensitivity according to the
latest version of the joint industry standard, IPC/JEDEC J-STD-020, in force at the time of product
evaluation. We test all of our products to the maximum conditions set forth in the standard, and guarantee
proper operation of our devices when handled according to the limitations and information in that standard as well as
to any limitations set forth in the information or standards referenced below.
Failure to adhere to the warnings or limitations as established by the listed specifications could result in reduced
product performance, reduction of operable life, and/or reduction of overall reliability.
This product carries a Moisture Sensitivity Level (MSL) rating as shown below, and should be handled according to
the requirements of the latest version of the joint industry standard IPC/JEDEC J-STD-033.
3.2 ESD Sensitivity
This product is ESD Sensitive, and should be handled according to the industry standard
JESD-625.
3.3 Reflow Profile
This product has a maximum body temperature and time rating as shown below. All other guidelines of
J-STD-020 must be observed.
3.4 Board Wash
IXYS Integrated Circuits Division recommends the use of no-clean flux formulations. However, board washing to
remove flux residue is acceptable, and the use of a short drying bake may be necessary. Chlorine-based or
Fluorine-based solvents or fluxes should not be used. Cleaning methods that employ ultrasonic energy should not be
used.
Device Moisture Sensitivity Level (MSL) Rating
IX2127G / IX2127N MSL 1
Device Maximum Temperature x Time
IX2127G 250°C for 30 seconds
IX2127N 260°C for 30 seconds
e3
Pb
INTEGRATED CIRCUITS DIVISION
IX2127
12 www.ixysic.com R03
3.5 Mechanical Dimensions
3.5.1 8-Pin DIP Through-Hole Package
3.5.2 8-Pin SOIC Package
Dimensions
mm
(inches)
PCB Hole Pattern
2.540 ± 0.127
(0.100 ± 0.005)
6.350 ± 0.127
(0.250 ± 0.005)
9.144 ± 0.508
(0.360 ± 0.020)
0.457 ± 0.076
(0.018 ± 0.003)
9.652 ± 0.381
(0.380 ± 0.015)
7.239 TYP.
(0.285)
7.620 ± 0.254
(0.300 ± 0.010)
4.064 TYP
(0.160)
0.813 ± 0.102
(0.032 ± 0.004)
8-0.800 DIA.
(8-0.031 DIA.) 2.540 ± 0.127
(0.100 ± 0.005)
7.620 ± 0.127
(0.300 ± 0.005)
7.620 ± 0.127
(0.300 ± 0.005)
6.350 ± 0.127
(0.250 ± 0.005)
3.302 ± 0.051
(0.130 ± 0.002)
Pin 1
0.254 ± 0.0127
(0.010 ± 0.0005)
Dimensions
mm
(inches)
PCB Land Pattern
Pin 1
Pin 8
3.937 ± 0.254
(0.155 ± 0.010)
5.994 ± 0.254
(0.236 ± 0.010)
0.406 ± 0.076
(0.016 ± 0.003)
4.928 ± 0.254
(0.194 ± 0.010)
1.270 REF
(0.050)
1.346 ± 0.076
(0.053 ± 0.003)
0.051 MIN - 0.254 MAX
(0.002 MIN - 0.010 MAX)
0.559 ± 0.254
(0.022 ± 0.010)
0.762 ± 0.254
(0.030 ± 0.010)
1.27
(0.050)
5.40
(0.213)
1.55
(0.061)
0.60
(0.024)
INTEGRATED CIRCUITS DIVISION
IX2127
R03 www.ixysic.com 13
3.5.3 Tape & Reel Packaging for 8-Pin SOIC Package
Dimensions
mm
(inches)
NOTE: Tape dimensions not shown comply with JEDEC Standard EIA-481-2
Embossment
Embossed Carrier
Top Cover
Tape Thickness
0.102 MAX.
(0.004 MAX.)
330.2 DIA.
(13.00 DIA.)
K0= 2.10
(0.083)
W=12.00
(0.472)
B0=5.30
(0.209)
User Direction of Feed
A0=6.50
(0.256)
P=8.00
(0.315)
For additional information please visit our website at: www.ixysic.com
IXYS Integrated Circuits Division makes no representations or warranties with respect to the accuracy or completeness of the contents of this publication and
reserves the right to make changes to specifications and product descriptions at any time without notice. Neither circuit patent licenses or indemnity are expressed
or implied. Except as set forth in IXYS Integrated Circuits Division’s Standard Terms and Conditions of Sale, IXYS Integrated Circuits Division assumes no liability
whatsoever, and disclaims any express or implied warranty relating to its products, including, but not limited to, the implied warranty of merchantability, fitness for a
particular purpose, or infringement of any intellectual property right.
The products described in this document are not designed, intended, authorized, or warranted for use as components in systems intended for surgical implant into
the body, or in other applications intended to support or sustain life, or where malfunction of IXYS Integrated Circuits Division’s product may result in direct physical
harm, injury, or death to a person or severe property or environmental damage. IXYS Integrated Circuits Division reserves the right to discontinue or make changes
to its products at any time without notice.
Specification: DS-IX2127-R03
©Copyright 2012, IXYS Integrated Circuits Division
All rights reserved. Printed in USA.
12/19/2012