© Semiconductor Components Industries, LLC, 2005
December, 2005 − Rev. 5 1Publication Order Number:
MAC08BT1/D
MAC08BT1, MAC08MT1
Preferred Device
Sensitive Gate Triacs
Silicon Bidirectional Thyristors
Designed for use in solid state relays, MPU interface, TTL logic and
other light industrial or consumer applications. Supplied in surface
mount package for use in automated manufacturing.
Features
•Sensitive Gate Trigger Current in Four Trigger Modes
•Blocking Voltage to 600 Volts
•Glass Passivated Surface for Reliability and Uniformity
•Surface Mount Package
•Pb−Free Packages are Available
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Symbol Value Unit
Peak Repetit iv e Off−State Voltage (Note 1)
(Sine Wave, 50 to 60 Hz, Gate Open,
TJ = 25 to 110°C) MAC08BT1
MAC08MT1
VDRM,
VRRM 200
600
V
On−State Current RMS (TC = 80°C)
(Full Sine Wave 50 to 60 Hz) IT(RMS) 0.8 A
Peak Non−repetitive Surge Current
(One Full Cycle Sine Wave, 60 Hz,
TC = 25°C)
ITSM 8.0 A
Circuit Fusing Considerations
(Pulse Width = 8.3 ms) I2t 0.4 A2s
Peak Gate Power
(TC = 80°C, Pulse Width v 1.0 ms) PGM 5.0 W
Average Gate Power
(TC = 80°C, t = 8.3 ms) PG(AV) 0.1 W
Operating Junction Temperature Range TJ−40 to +110 °C
Storage Temperature Range Tstg −40 to +150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistanc e, Junc tion−to−Ambient
PCB Mounted per Figure 1 RqJA 156 °C/W
T h er mal Resistance, Junction−to−Tab
Measured on MT2 Tab Adjacent to Epoxy RqJT 25 °C/W
Maxim um Devic e Temperature for
Soldering Purposes for 10 Secs Maximum TL260 °C
TRIAC
0.8 AMPERE RMS
200 thru 600 VOLTS
Preferred devices are recommended choices for future use
and best overall value.
MT1
G
MT2
4
23
PIN ASSIGNMENT
1
2
3 Gate
Main Terminal 1
Main Terminal 2
4Main Terminal 2
http://onsemi.com
SOT−223
CASE 318E
STYLE 11
MARKING
DIAGRAM
AYW
AC08x G
G
A = Assembly Location
Y = Year
W = Work Week
AC08X = Device Code
x= B or M
G= Pb−Free Package
(Note: Microdot may be in either location)
1
Device Package Shipping†
ORDERING INFORMATION
MAC08BT1 SOT−223 1000 Tape & Reel
MAC08MT1 SOT−223 1000 Tape & Reel
† For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
MAC08BT1G SOT−223
(Pb−Free) 1000 Tape & Reel
MAC08MT1G SOT−223
(Pb−Free) 1000 Tape & Reel
MAC08BT1, MAC08MT1
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions.)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(VD = Rated VDRM, VRRM; Gate Open) TJ = 25°C
TJ = 110°C
IDRM,
IRRM −
−−
−10
200 mA
mA
ON CHARACTERISTICS
Peak On−State Voltage (Note 2)
(IT = "1.1 A Peak) VTM − − 1.9 V
Gate Trigger Current (Continuous dc) All Quadrants
(VD = 12 Vdc, RL = 100 W)IGT − − 10 mA
Holding Current (Continuous dc)
(VD = 12 Vdc, Gate Open, Initiating Current = "20 mA) IH− − 5.0 mA
Gate Trigger Voltage (Continuous dc) All Quadrants
(VD = 12 Vdc, RL = 100 W)VGT − − 2.0 V
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Commutation Voltage
(f = 250 Hz, ITM = 1.0 A, Commutating di/dt = 1.5 A/mS
On−State Current Duration = 2.0 mS, VDRM = 200 V,
Gate Unenergized, TC = 110°C,
Gate Source Resistance = 150 W, See Figure 10)
(dv/dt)c1.5 − − V/ms
Critical Rate−of−Rise of Off State Voltage
(Vpk = Rated VDRM, TC= 110°C, Gate Open, Exponential Method) dv/dt 10 − − V/ms
2. Pulse Test: Pulse Width ≤ 300 msec, Duty Cycle ≤2%.
+ Current
+ Voltage
VTM
IH
Symbol Parameter
VDRM Peak Repetitive Forward Off State Voltage
IDRM Peak Forward Blocking Current
VRRM Peak Repetitive Reverse Off State Voltage
IRRM Peak Reverse Blocking Current
Voltage Current Characteristic of Triacs
(Bidirectional Device)
IDRM at VDRM
on state
off state
IRRM at VRRM
Quadrant 1
MainTerminal 2 +
Quadrant 3
MainTerminal 2 − VTM
IH
VTM Maximum On State Voltage
IHHolding Current
MAC08BT1, MAC08MT1
http://onsemi.com
3
MT1
(+) IGT
GATE
(+) MT2
REF
MT1
(−) IGT
GATE
(+) MT2
REF
MT1
(+) IGT
GATE
(−) MT2
REF
MT1
(−) IGT
GATE
(−) MT2
REF
−
MT2 NEGATIVE
(Negative Half Cycle)
MT2 POSITIVE
(Positive Half Cycle)
+
Quadrant III Quadrant IV
Quadrant II Quadrant I
Quadrant Definitions for a Triac
IGT −+ IGT
All polarities are referenced to MT1.
With in−phase signals (using standard AC lines) quadrants I and III are used.
Figure 1. PCB for Thermal Impedance and Power Testing of SOT-223
0.079
2.0
0.079
2.0
0.059
1.5
0.091
2.3
0.091
2.3
mm
inches
0.472
12.0
0.096
2.44
BOARD MOUNTED VERTICALLY IN CINCH 8840 EDGE CONNECTOR.
BOARD THICKNESS = 65 MIL., FOIL THICKNESS = 2.5 MIL.
MATERIAL: G10 FIBERGLASS BASE EPOXY
0.984
25.0
0.244
6.2
0.059
1.5
0.059
1.5
0.096
2.44
0.096
2.44
0.059
1.5
0.059
1.5
0.15
3.8
MAC08BT1, MAC08MT1
http://onsemi.com
4
TA, MAXIMUM ALLOWABLEAMBIENT TEMPERATURE ( C)°
110
100
90
80
60
50
70
IT(RMS), RMS ON-STATE CURRENT (AMPS)
110
100
90
80
60
50
40
30
20
70
TA, MAXIMUM ALLOWABLEAMBIENT TEMPERATURE ( C)°
Figure 2. On-State Characteristics Figure 3. Junction to Ambient Thermal
Resistance versus Copper Tab Area
Figure 4. Current Derating, Minimum Pad Size
Reference: Ambient Temperature Figure 5. Current Derating, 1.0 cm Square Pad
Reference: Ambient Temperature
FOIL AREA (cm2)
θJA, JUNCTION TO AMBIENT THERMAL
vT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
IT, INSTANTANEOUS ON-STATE CURRENT (AMPS)
IT(RMS), RMS ON-STATE CURRENT (AMPS)
Figure 6. Current Derating, 2.0 cm Square Pad
Reference: Ambient Temperature
10
1.0
0.1
0.01 5.04.03.02.0 30
60
70
80
90
160
2.00
110
0.5
0.30.20.10
IT(RMS), RMS ON-STATE CURRENT (AMPS)
0.70.60.50.40.30.20.10
0.50.40.30.20.10
1.00 4.0 6.0 8.0 10
100
90
80
60
50
40
30
20
0.6 0.7 0.8
RESISTANCE, C/W°
150
140
130
120
110
40
50
100
TYPICAL
MAXIMUM
4
123
MINIMUM
FOOTPRINT = 0.076 cm2
DEVICE MOUNTED ON
FIGURE 1 AREA = L2
PCB WITH TAB AREA
AS SHOWN
0.4
70
TA, MAXIMUM ALLOWABLE
AMBIENT TEMPERATURE ( C)°
dc
30°60°
90°
α = 180°
dc
30°
MINIMUM FOOTPRINT
50 OR 60 Hz
120°
T(tab), MAXIMUM ALLOWABLE
TAB TEMPERATURE ( C)°
110
105
100
95
90
85
80
IT(RMS), ON-STATE CURRENT (AMPS)
Figure 7. Current Derating
Reference: MT2 Tab
0.50.40.30.20.10 0.6 0.7 0.8
120°
dc
30°
120°
R
L
L
90°
120°
90°
60°
30°
90°
TYPICAL AT TJ = 110°C
MAX AT TJ = 110°C
MAX AT TJ = 25°C
60°
α = 180°
1.0 cm2 FOIL AREA
50 OR 60 Hz
dc
α = 180°α = 180°
REFERENCE:
FIGURE 1
60°
α
α
α
α
α = CONDUCTION
ANGLE
α
α
α
α
4.0 cm2 FOIL AREA
α = CONDUCTION
ANGLE
α = CONDUCTION
ANGLE
α = CONDUCTION
ANGLE
MAC08BT1, MAC08MT1
http://onsemi.com
5
COMMUTATING dv/dt
dv/dt , (V/ S)
cμ
Figure 8. Power Dissipation
P(AV), MAXIMUM AVERAGE
POWER DISSIPATION (WATTS)
1.0
0.8
0.7
0.5
0.4
0.2
0
IT(RMS), RMS ON-STATE CURRENT (AMPS)
Figure 9. Thermal Response, Device
Mounted on Figure 1 Printed Circuit Board
0.50.40.30.20.10 0.6 0.7 0.8
dc 90°
120°
10
1.0
di/dtc, RATE OF CHANGE OF COMMUTATING CURRENT (A/mS)
t, TIME (SECONDS)
r(t), TRANSIENT THERMAL
0.01
1.0
0.0010.0001
1.0
0.01 0.1 10 100
10
RESISTANCE (NORMALIZED)
0.1
10
1.0
TJ, JUNCTION TEMPERATURE (°C)
90807060 100 110
VDRM = 200 V
400 Hz
300 Hz
0.9
0.6
0.3
0.1
1.0
110°
VDRM
ITM
60 Hz
tw
30°
f = 1
2 tw
COMMUTATING dv/dt
dv/dt , (V/ S)
cμ
60°
80°
180 Hz
α = 180°60°
(dińdt)c+
6fITM
1000
100°
α
α
α = CONDUCTION
ANGLE
Figure 10. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Voltage (dv/dt)c
LL1N4007
200 V
+
MEASURE
I
−
CHARGE
CONTROL
CHARGE TRIGGER
NON-POLAR
CL
51 W
MT2
MT1
1N914
G
TRIGGER CONTROL
200 VRMS
ADJUST FOR
ITM, 60 Hz VAC
Note: Component values are for verification of rated (dv/dt)c. See AN1048 for additional information.
RS
ADJUST FOR
dv/dt(c)
CS
Figure 11. Typical Commutating dv/dt versus
Current Crossing Rate and Junction Temperature Figure 12. Typical Commutating dv/dt versus
Junction Temperature at 0.8 Amps RMS
MAC08BT1, MAC08MT1
http://onsemi.com
6
STATIC dv/dt (V/ s)
60
20
RG, GATE − MAIN TERMINAL 1 RESISTANCE (OHMS)
Figure 13. Exponential Static dv/dt versus
Gate − Main Terminal 1 Resistance
10 10,000
Figure 14. Typical Gate Trigger Current Variation
TJ, JUNCTION TEMPERATURE (°C)
0.1
10
0−40 20 100
I
1.0
V , GATE TRIGGER VOLTAGE (VOLTS)
1.1
0.3
TJ, JUNCTION TEMPERATURE (°C)
−40
μ
GT
600 Vpk
TJ = 110°C
IGT4
IGT1
50
40
30
1000100
IGT3
IGT2
GT, GATE TRIGGER CURRENT (mA)
−20 40 60 80
0 20 100−20 40 60 80
VGT2
VGT1
VGT3 VGT4
MAIN TERMINAL #2
POSITIVE
MAIN TERMINAL #1
POSITIVE
HOLDING CURRENT (mA)
6.0
0
TJ, JUNCTION TEMPERATURE (°C)
Figure 15. Typical Holding Current Variation
−40
5.0
4.0
3.0
2.0
1.0
I ,
H
0 20 100−20 40 60 80
MAIN TERMINAL #2
POSITIVE
MAIN TERMINAL #1
POSITIVE
Figure 16. Gate Trigger Voltage Variation
MAC08BT1, MAC08MT1
http://onsemi.com
7
PACKAGE DIMENSIONS
SOT−223 (TO−261)
CASE 318E−04
ISSUE L
STYLE 11:
PIN 1. MT 1
2. MT 2
3. GATE
4. MT 2
A1
b1
D
E
b
e
e1
4
123
0.08 (0003)
A
L1
C
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
1.5
0.059 ǒmm
inchesǓ
SCALE 6:1
3.8
0.15
2.0
0.079
6.3
0.248
2.3
0.091 2.3
0.091
2.0
0.079
SOLDERING FOOTPRINT*
HE
DIM
AMIN NOM MAX MIN
MILLIMETERS
1.50 1.63 1.75 0.060
INCHES
A1 0.02 0.06 0.10 0.001
b0.60 0.75 0.89 0.024
b1 2.90 3.06 3.20 0.115
c0.24 0.29 0.35 0.009
D6.30 6.50 6.70 0.249
E3.30 3.50 3.70 0.130
e2.20 2.30 2.40 0.087
0.85 0.94 1.05 0.033
0.064 0.068
0.002 0.004
0.030 0.035
0.121 0.126
0.012 0.014
0.256 0.263
0.138 0.145
0.091 0.094
0.037 0.041
NOM MAX
L1 1.50 1.75 2.00 0.060
6.70 7.00 7.30 0.264 0.069 0.078
0.276 0.287
HE− −
e1
0°10°0°10°
q
q
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its of ficers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Japan: ON Semiconductor, Japan Customer Focus Center
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Phone: 81−3−5773−3850
MAC08BT1/D
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 61312, Phoenix, Arizona 85082−1312 USA
Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada
Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
For additional information, please contact your
local Sales Representative.