VS-90SQ... Series, VS-90SQ...-M3 Series www.vishay.com Vishay Semiconductors Schottky Rectifier, 9 A FEATURES * 150 C TJ operation * Low forward voltage drop Cathode Anode * High frequency operation * High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance DO-204AR * Guard ring for enhanced ruggedness and long term reliability * Compliant to RoHS Directive 2002/95/EC PRODUCT SUMMARY Package DO-204AR IF(AV) 9A * Designed and qualified for commercial level VR 30 V, 35 V, 40 V, 45 V VF at IF 0.42 V IRM max. 70 mA at 125 C TJ max. 150 C Diode variation Single die EAS 12 mJ * Halogen-free according to IEC 61249-2-21 definition (-M3 only) DESCRIPTION The VS-90SQ... axial leaded Schottky rectifier series has been optimized for very low forward voltage drop, with moderate leakage. The proprietary barrier technology allows for reliable operation up to 150 C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS CHARACTERISTICS SYMBOL VALUES UNITS 9 A IF(AV) Rectangular waveform VRRM Range 30 to 45 V IFSM tp = 5 s sine 2150 A VF 9 Apk, TJ = 125 C 0.42 V TJ Range - 55 to 150 C VOLTAGE RATINGS PARAMETER Maximum DC reverse voltage Maximum working peak reverse voltage SYMBOL VR VRWM VS-90SQ030 VS-90SQ035 VS-90SQ040 VS-90SQ045 UNITS VS-90SQ030-M3 VS-90SQ035-M3 VS-90SQ040-M3 VS-90SQ045-M3 30 35 40 45 V ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current See fig. 5 IF(AV) Maximum peak one cycle non-repetitive surge current See fig. 7 IFSM Non-repetitive avalanche energy EAS TJ = 25 C, IAS = 1.8 A, L = 7.4 mH 12 mJ Repetitive avalanche current IAR Current decaying linearly to zero in 1 s Frequency limited by, TJ maximum VA = 1.5 x VR typical 1.8 A Revision: 19-Sep-11 50 % duty cycle at TC = 69 C, rectangular waveform 5 s sine or 3 s rect. pulse 10 ms sine or 6 ms rect. pulse Following any rated load condition and with rated VRRM applied 9 2150 A 340 Document Number: 93417 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-90SQ... Series, VS-90SQ...-M3 Series www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS 9A Maximum forward voltage drop See fig. 1 VFM (1) TJ = 25 C 18 A 9A TJ = 125 C 18 A Maximum reverse leakage current See fig. 2 Maximum junction capacitance Typical series inductance Maximum voltage rate of change IRM (1) TJ = 25 C VR = Rated VR TJ = 125 C CT VR = 5 VDC, (test signal range 100 kHz to 1 MHz) 25 C LS Measured lead to lead 5 mm from body dV/dt Rated VR VALUES UNITS 0.48 0.57 V 0.42 0.52 1.75 mA 70 900 pF 10.0 nH 10 000 V/s VALUES UNITS - 55 to 150 C Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TJ, TStg Maximum thermal resistance, junction to lead RthJL Typical thermal resistance, junction to air RthJA TEST CONDITIONS DC operation; see fig. 4 1/8" lead length 8.0 C/W 44 1.4 Approximate weight g 0.049 oz. 90SQ030 Marking device Case style DO-204AR (JEDEC) 90SQ035 90SQ040 90SQ045 Revision: 19-Sep-11 Document Number: 93417 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-90SQ... Series, VS-90SQ...-M3 Series Vishay Semiconductors 1000 100 IR - Reverse Current (mA) IF - Instantaneous Forward Current (A) www.vishay.com 10 TJ = 150 C TJ = 125 C TJ = 25 C 1 0.1 TJ = 150 C 100 TJ = 125 C 10 TJ = 100 C 1 TJ = 75 C 0.1 TJ = 50 C TJ = 25 C 0.01 0.001 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 VFM - Forward Voltage Drop (V) 93417_01 5 15 20 25 30 35 40 45 VR - Reverse Voltage (V) 93417_02 Fig. 1 - Maximum Forward Voltage Drop Characteristics 10 Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage CT - Junction Capacitance (pF) 1000 TJ = 25 C 100 0 93417_03 10 20 30 40 50 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage ZthJC - Thermal Impedance (C/W) 10 = 1/8 inch 1 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 D = 0.01 0.1 PDM t1 t2 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC Single pulse (thermal resistance) 0.01 0.00001 93417_04 0.0001 0.001 0.01 0.1 1 10 100 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJL Characteristics Revision: 19-Sep-11 Document Number: 93417 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-90SQ... Series, VS-90SQ...-M3 Series Vishay Semiconductors 155 6 90SQ RthJL (DC) = 8.0 C/W 145 135 125 DC 115 105 4 D = 0.08 D = 0.17 D = 0.25 D = 0.33 D = 0.50 3 RMS Limit 5 Average Power Loss (W) Allowable Case Temperature (C) www.vishay.com DC 2 1 = 1/8 inch 0 95 0 93417_05 2 4 6 8 10 12 14 0 IF(AV) - Average Forward Current (A) IFSM - Non-Repetitive Surge Current (A) 4 6 8 10 12 14 Average Forward Current - IF(AV) (A) 93417_06 Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current 2 Fig. 6 - Forward Power Loss Characteristics 10 000 At any rated load condition and with rated VRRM applied following surge 1000 100 10 93417_07 100 1000 10 000 tp - Square Wave Pulse Duration (s) Fig. 7 - Maximum Non-Repetitive Surge Current L D.U.T. IRFP460 Rg = 25 Current monitor High-speed switch Freewheel diode + Vd = 25 V 40HFL40S02 Fig. 8 - Unclamped Inductive Test Circuit Revision: 19-Sep-11 Document Number: 93417 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-90SQ... Series, VS-90SQ...-M3 Series www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 90 S Q 045 TR -M3 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - 90 = Current x 10 3 - S = DO-204AR 4 - Q = Schottky Q.. series 5 - Voltage rating 6 - TR = Tape and reel package 030 035 040 045 = = = = 30 35 40 45 V V V V None = Bulk package 7 - Environmental digit None = Lead (Pb)-free and RoHS compliant -M3 = Halogen-free, RoHS compliant, and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY VS-90SQ030 300 300 PACKAGING DESCRIPTION Bulk VS-90SQ030TR 1500 1500 Tape and reel VS-90SQ030-M3 300 300 Bulk VS-90SQ030TR-M3 1500 1500 Tape and reel VS-90SQ035 300 300 Bulk VS-90SQ035TR 1500 1500 Tape and reel VS-90SQ035-M3 300 300 Bulk VS-90SQ035TR-M3 1500 1500 Tape and reel VS-90SQ040 300 300 Bulk VS-90SQ040TR 1500 1500 Tape and reel VS-90SQ040-M3 300 300 Bulk VS-90SQ040TR-M3 1500 1500 Tape and reel VS-90SQ045 300 300 Bulk VS-90SQ045TR 1500 1500 Tape and reel VS-90SQ045-M3 300 300 Bulk VS-90SQ045TR-M3 1500 1500 Tape and reel LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95243 Part marking information www.vishay.com/doc?95325 Packaging information www.vishay.com/doc?95332 Revision: 19-Sep-11 Document Number: 93417 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors Axial DO-204AR DIMENSIONS in millimeters (inches) 6.35 (0.250) DIA. 6.10 (0.240) Cathode band 27.94 (1.10) MIN. (2 places) 9.52 (0.375) 9.27 (0.365) 27.94 (1.10) MIN. (2 places) 9.52 (0.375) 9.27 (0.365) 1.32 (0.052) DIA. 1.22 (0.048) (2 places) 2.54 (0.100) MAX. Flash (2 places) 1.32 (0.052) DIA. 1.22 (0.048) (2 places) 6.35 (0.250) DIA. 6.10 (0.240) Revision: 29-Aug-11 Document Number: 95243 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000