© 2017 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
VDSX TJ= 25C to 150C 1000 V
VGSX Continuous 20 V
VGSM Transient 30 V
PDTC= 25C 125 W
TJ- 55 ... +150 C
TJM 150 C
Tstg - 55 ... +150 C
TLMaximum Lead Temperature for Soldering 300 °C
TSOLD 1.6 mm (0.062in.) from Case for 10s 260 °C
MdMounting Torque (TO-220) 1.13 / 10 Nm/lb.in.
Weight TO-263 2.5 g
TO-220 3.0 g
DS100184E(4/17)
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max.
BVDSX VGS = - 5V, ID = 250A 1000 V
VGS(off) VDS = 25V, ID = 250A - 2.5 - 4.5 V
IGSX VGS = 20V, VDS = 0V 100 nA
IDSX(off) VDS = VDSX, VGS = - 5V 5 A
TJ = 125C 50A
RDS(on) VGS = 0V, ID = 1.5A, Note 1 6
ID(on) VGS = 0V, VDS = 50V, Note 1 3 A
IXTA3N100D2
IXTP3N100D2
VDSX = 1000V
ID(on) > 3A
RDS(on)
6
Features
• Normally ON Mode
• International Standard Packages
• Molding Epoxies Meet UL 94 V-0
Flammability Classification
Advantages
• Easy to Mount
• Space Savings
• High Power Density
Applications
• Audio Amplifiers
• Start-Up Circuits
• Protection Circuits
• Ramp Generators
• Current Regulators
• Active Loads
Depletion Mode
MOSFET
N-Channel
G = Gate D = Drain
S = Source Tab = Drain
TO-263 AA (IXTA)
GDS
TO-220AB (IXTP)
D (Tab)
G
S
D (Tab)
G
D
S
IXTA3N100D2
IXTP3N100D2
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max.
gfs VDS = 30V, ID = 1.5A, Note 1 1.2 2.0 S
Ciss 1020 pF
Coss VGS = -10V, VDS = 25V, f = 1MHz 68 pF
Crss 17 pF
td(on) 27 ns
tr 67 ns
td(off) 34 ns
tf 40 ns
Qg(on) 37.5 nC
Qgs VGS = 5V, VDS = 500V, ID = 1.5A 4.4 nC
Qgd 21.2 nC
RthJC 1.0 C/W
RthCS TO-220 0.50 C/W
Safe-Operating-Area Specification
Characteristic Values
Symbol Test Conditions Min. Typ. Max.
SOA VDS = 800V, ID = 94mA, TC = 75C, Tp = 5s 75 W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max.
VSD IF = 3A, VGS = -10V, Note 1 0.8 1.3 V
trr 970 ns
IRM 12.7 A
QRM 6.16 μC
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Note 1. Pulse test, t 300s, duty cycle, d 2%.
Resistive Switching Times
VGS = 5V, VDS = 500V, ID = 1.5A
RG = 3.3 (External)
IF = 3A, -di/dt = 100A/s
VR = 100V, VGS = -10V
TO-220 Outline
Pins: 1 - Gate 2 - Drain
3 - Source
TO-263 Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.06 4.83 .160 .190
b 0.51 0.99 .020 .039
b2 1.14 1.40 .045 .055
c 0.40 0.74 .016 .029
c2 1.14 1.40 .045 .055
D 8.64 9.65 .340 .380
D1 8.00 8.89 .280 .320
E 9.65 10.41 .380 .405
E1 6.22 8.13 .270 .320
e 2.54 BSC .100 BSC
L 14.61 15.88 .575 .625
L1 2.29 2.79 .090 .110
L2 1.02 1.40 .040 .055
L3 1.27 1.78 .050 .070
L4 0 0.13 0 .005
1. Gate
2. Drain
3. Source
4. Drain
Bottom
Side
© 2017 IXYS CORPORATION, All Rights Reserved
IXTA3N100D2
IXTP3N100D2
Fig. 1. Output Characteristics @ T
J
= 25
o
C
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0 2 4 6 8 10 12 14
V
DS
- Volts
I
D
- Amperes
V
GS
= 5V
2V
1V
- 2V
0V
- 3V
-1V
Fig. 2. Extended Output Characteristics @ T
J
= 25
o
C
0
1
2
3
4
5
6
7
0 1020304050
V
DS
- Volts
I
D
- Amperes
V
GS
= 5V
2V
1V
- 2V
-1V
0V
Fig. 3. Output Characteristics @ T
J
= 125
o
C
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0 5 10 15 20 25 30
V
DS
- Volts
I
D
- Amperes
V
GS
= 5V
1V
0V
-1V
- 2V
- 3V
Fig. 4. Drain Current @ T
J
= 25
o
C
1.E-07
1.E-06
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
0 100 200 300 400 500 600 700 800 900 1000 1100 1200
V
DS
- Volts
I
D
- Amperes
V
GS
= - 3.00V
- 3.75V
- 3.25V
- 3.50V
- 4.00V
- 4.25V
- 4.50V
Fig. 5. Drain Current @ T
J
= 100
o
C
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
0 100 200 300 400 500 600 700 800 900 1000 1100 1200
V
DS
- Volts
I
D
- Amperes
V
GS
= - 3.25V
- 3.50V
- 3.75V
- 4.50V
- 4.00V
- 4.25V
Fig. 6. Dynamic Resistance vs. Gate Voltage
1.E+04
1.E+05
1.E+06
1.E+07
1.E+08
1.E+09
1.E+10
-4.6 -4.4 -4.2 -4.0 -3.8 -3.6 -3.4 -3.2 -3.0 -2.8
V
GS
- Volts
R
O
- Ohms
∆
V
DS
= 700V - 100V
T
J
= 25
o
C
T
J
= 100
o
C
IXTA3N100D2
IXTP3N100D2
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
Fig. 7. Normalized R
DS(on)
vs. Junction Temperature
0.4
0.8
1.2
1.6
2.0
2.4
-50-25 0 255075100125150
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= 0V
I
D
= 1.5A
Fig. 8. R
DS(on)
Normalized to I
D
= 1.5A Value
vs. Drain Current
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
I
D
- Amperes
R
DS(on)
- Normalized
V
GS
= 0V
5V
T
J
= 125
o
C
T
J
= 25
o
C
Fig. 9. Input Admittance
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
-4.0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0
V
GS
- Volts
I
D
- Amperes
T
J
= 125
o
C
25
o
C
- 40
o
C
V
DS
= 30V
Fig. 10. Transconductance
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40
o
C
V
DS
= 30V
25
o
C
125
o
C
Fig. 12. Forward Voltage Drop of Intrinsic Diode
0
1
2
3
4
5
6
7
8
9
10
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
V
SD
- Volts
I
S
- Amperes
T
J
= 125
o
C
V
GS
= -10V
T
J
= 25
o
C
Fig. 11. Breakdown and Threshold Voltages
vs. Junction Temperature
0.8
0.9
1.0
1.1
1.2
1.3
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
BV / V
GS(off)
- Normalized
V
GS(off)
@ V
DS
= 25V
BV
DSX
@ V
GS
= - 5V
© 2017 IXYS CORPORATION, All Rights Reserved
IXTA3N100D2
IXTP3N100D2
IXYS REF: T_3N100D2(3C) 7-15-14-B
Fig. 17. Maximum Transient Thermal Impedance
0.01
0.10
1.00
10.00
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- K / W
Fig. 17. Maximum Transient Thermal Impedance
.
2.00
Fig. 14. Gate Charge
-5
-4
-3
-2
-1
0
1
2
3
4
5
0 5 10 15 20 25 30 35 40
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 500V
I
D
= 1.5A
I
G
= 10mA
Fig. 13. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - PicoFarad
s
f
= 1 MHz
Ciss
Crss
Coss
Fig. 15. Forward-Bias Safe Operating Area
@ T
C
= 25
o
C
0.01
0.10
1.00
10.00
10 100 1,000
V
DS
- Volts
I
D
- Amperes
25μs
1ms
100μs
R
DS(on)
Limit
10ms
100ms
DC
T
J
= 150
o
C
T
C
= 25
o
C
Single Pulse
Fig. 16. Forward-Bias Safe Operating Area
@ T
C
= 75
o
C
0.01
0.1
1
10
10 100 1,000
V
DS
- Volts
I
D
- Amperes
T
J
= 150
o
C
T
C
= 75
o
C
Single Pulse
25μs
1ms
100μs
R
DS(on)
Limit
10ms
100ms
DC