BGA416
RF Cascode Amplifier
Data Sheet, Rev. 2.1, April 2008
Small Signal Discretes
Edition 2008-04-21
Published by Infineon Technologies AG,
81726 München, Germany
© Infineon Technologies AG 2008.
All Rights Reserved.
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BGA416
Data Sheet 3 Rev. 2.1, 2008-04-21
Trademarks
SIEGET® is a registered trademark of Infineon Technologies AG.
BGA416, RF Cascode Amplifier
Revision History: 2008-04-21, Rev. 2.1
Previous Version: 2005-07-26
Page Subjects (major changes since last revision)
All Document layout change
4-5 Electrical Characteristics slightly changed
7-8 Figures updated
Data Sheet 4 Rev. 2.1, 2008-04-21
BGA416
RF Cascode Amplifier
1 RF Cascode Amplifier
Figure 1 Pin connection
Description
BGA416 is a monolithic silicon cascode amplifier with high reverse isolation. A bias network is integrated for
simplified biasing.
Note: ESD: Electrostatic discharge sensitive device, observe handling precaution
Feature
•GMA =23dB at 900MHz
• Ultra high reverse isolation, 60 dB at 900 MHz
• Low noise figure, F50Ω= 1.2 dB at 900 MHz
• On chip bias circuitry, 5.5 mA bias current at VCC = 3 V
• Typical supply voltage: 2.5 to 5.0 V
•SIEGET
®-25 technology
• Pb-free (RoHS compliant) package
Applications
• Buffer amplifier
•LNAs
• Oscillator active devices
SOT143
Type Package Marking
BGA416 SOT143 C1s
1
2
3
4
BGA416_Pin_connection.vsd
RFout, 4
RFin, 2 GND, 3
GND, 1
Bias
BGA416
Electrical Characteristics
Data Sheet 5 Rev. 2.1, 2008-04-21
Maximum Ratings
Note: All Voltages refer to GND-Node
Thermal resistance
2 Electrical Characteristics
Electrical characteristics at TA= 25 °C (measured in test circuit specified in Figure 2)
VCC = 3 V, unless otherwise specified
Table 1 Maximum ratings
Parameter Symbol Limit Value Unit
Voltage at pin RFout VOUT 6V
Device current1)
1) Device current is equal to current into pin RFout
ID20 mA
Current into pin RFin Iin 0.5 mA
Input power Pin 8dBm
Total power dissipation, TS< 123°C2)
2) TS is measured on the ground lead at the soldering point
Ptot 100 mW
Junction temperature TJ150 °C
Ambient temperature range TA-65... 150 °C
Storage temperature range TSTG -65... 150 °C
Table 2 Thermal resistance
Parameter Symbol Value Unit
Junction - soldering point1)
1) For calculation of RthJA please refer to Application Note Thermal Resistance
RthJS 270 K/W
Table 3 Electrical Characteristics
Parameter Symbol Values Unit Note /
Test Condition
Min. Typ. Max.
Maximum available power gain GMA 23 dB f=0.9GHz
14 dB f=1.8GHz
Insertion power gain |S21|217 dB f=0.9GHz
11 dB f=1.8GHz
Reverse isolation |S12|60 dBf=0.9GHz
40 dB f=1.8GHz
Noise figure (ZS = 50 Ω) F50Ω1.2 dB f=0.9GHz
1.6 dB f=1.8GHz
Output power at 1 dB gain
compression (ZS=ZL=50Ω)
P-1dB -3 dBm f=0.9GHz
-3 dBm f=1.8GHz
Output third order intercept point
(ZS=ZL=50Ω)
OIP314 dBm f=0.9GHz
14 dBm f=1.8GHz
Device current ID5.5 mA
Data Sheet 6 Rev. 2.1, 2008-04-21
BGA416
Electrical Characteristics
Figure 2 Test Circuit for Electrical Characteristics
BGA416_S_Parameter_Circuit.vs
d
Out
Top View
RFin
RFout GND
GND
Bias-T
Refere nce Plane
I
D
R eference Plane
Bias-T
In
V
CC
N.C.
BGA416
Measured Parameters
Data Sheet 7 Rev. 2.1, 2008-04-21
3 Measured Parameters
Power Gain |S21|2, Gma = f(f)
VCC = 3V, I D = 5.5mA
0 1 2 3 4
0
5
10
15
20
25
30
35
40
Frequency [GHz]
|S
21
|
2
, G
ma
[dB]
|S21|2
Gma
Matching |S11|, |S22| = f(f)
VCC = 3V, I D = 5.5mA
0 1 2 3 4
−10
−9
−8
−7
−6
−5
−4
−3
−2
−1
0
Frequency [GHz]
|S
11
|, |S
22
| [dB]
S11
S22
Reverse Isolation |S12| = f(f)
VCC = 3V, I D = 5.5mA
0 1 2 3 4
−80
−70
−60
−50
−40
−30
−20
−10
0
Frequency [GHz]
|S
12
| [dB]
Noise figure F = f(f)
VCC = 3V, I D = 5.5mA
0 0.5 1 1.5 2 2.5 3
0
0.5
1
1.5
2
2.5
3
Frequency [GHz]
F [dB]
Data Sheet 8 Rev. 2.1, 2008-04-21
BGA416
Package Information
4 Package Information
Figure 3 Package Outline SOT143
Figure 4 Tape for SOT143
Device Current I D = f(VCC)
0 1 2 3 4 5
0
1
2
3
4
5
6
7
8
9
10
11
12
V
CC
[V]
I
D
[mA]
(1.7)
0.8
-0.05
+0.1
1.9 B
±0.1
2.9
+0.1
-0.05
0.4
0.1 MAX.
GPS05559
12
34
0.25
M
B
10˚ MAX.
0.15 MIN.
0.2 A
M
0.2
10˚ MAX.
A
1.3 ±0.1
0...8˚
0.08...0.15
2.4 ±0.15
±0.1
1
2.6
4
3.15
Pin 1
8
0.2
1.15
CSOG5812
