QFET (R) FQD5N60C / FQU5N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. * * * * * * * 2.8A, 600V, RDS(on) = 2.5 @VGS = 10 V Low gate charge ( typical 15 nC) Low Crss ( typical 6.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability RoHS Compliant FQD5N60C / FQU5N60C October 2008 D ! D G S D-PAK FQD Series G D S G! I-PAK FQU Series ! S Absolute Maximum Ratings Symbol VDSS ID TC = 25C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25C) Drain Current FQD5N60C / FQU5N60C 600 Units V 2.8 A - Continuous (TC = 100C) IDM Drain Current - Pulsed (Note 1) 1.8 A 11.2 A VGSS Gate-Source Voltage 30 V EAS Single Pulsed Avalanche Energy (Note 2) 210 mJ IAR Avalanche Current (Note 1) 2.8 A EAR (Note 1) dv/dt Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25C)* 4.9 4.5 2.5 mJ V/ns W PD Power Dissipation (TC = 25C) 49 0.39 -55 to +150 W W/C C 300 C TJ, TSTG TL (Note 3) - Derate above 25C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Symbol RJC Parameter Thermal Resistance, Junction-to-Case RJA Thermal Resistance, Junction-to-Ambient* RJA Thermal Resistance, Junction-to-Ambient Typ - Max 2.56 Units C/W - 50 C/W - 110 C/W * When mounted on the minimum pad size recommended (PCB Mount) (c)2008 Fairchild Semiconductor Internationa Rev. A1, October 2008 http://store.iiic.cc/ Symbol TC = 25C unless otherwise noted Parameter Test Conditions Min Typ Max Units 600 -- -- V -- V/C Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 A BVDSS / TJ Breakdown Voltage Temperature Coefficient ID = 250 A, Referenced to 25C -- 0.6 IDSS IGSSF IGSSR VDS = 600 V, VGS = 0 V -- -- 1 A VDS = 480 V, TC = 125C -- -- 10 A Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA 2.0 -- 4.0 V -- 2.0 2.5 -- 4.7 -- S -- 515 670 pF -- 55 72 pF -- 6.5 8.5 pF Zero Gate Voltage Drain Current On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 A RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 1.4 A gFS Forward Transconductance VDS = 40 V, ID = 1.4 A (Note 4) FQD5N60C / FQU5N60C Electrical Characteristics Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 300 V, ID = 4.5A, RG = 25 (Note 4, 5) VDS = 480 V, ID = 4.5A, VGS = 10 V (Note 4, 5) -- 10 30 ns -- 42 90 ns -- 38 85 ns -- 46 100 ns -- 15 19 nC -- 2.5 -- nC -- 6.6 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 2.8 A ISM -- -- 11.2 A VSD Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 2.8 A Drain-Source Diode Forward Voltage -- -- 1.4 V trr Reverse Recovery Time -- 300 -- ns Qrr Reverse Recovery Charge -- 2.2 -- C VGS = 0 V, IS = 4.5 A, dIF / dt = 100 A/s (Note 4) Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 18.9mH, IAS = 4.5 A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 4.5A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature (c)2008 Fairchild Semiconductor Corporation Rev. A1, October 2008 http://store.iiic.cc/ FQD5N60C / FQU5N60C Typical Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V Top : ID, Drain Current [A] 0 10 1 10 ID, Drain Current [A] 1 10 -1 10 o 150 C o -55 C o 25 C 0 10 Notes : 1. 250 s Pulse Test 2. TC = 25 Notes : 1. VDS = 40V 2. 250 s Pulse Test -1 10 -2 10 -1 0 10 2 1 10 10 4 6 8 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 6 1 10 IDR, Reverse Drain Current [A] RDS(ON) [ ], Drain-Source On-Resistance 5 VGS = 10V 4 3 2 VGS = 20V 1 0 10 150 Notes : 1. VGS = 0V 2. 250 s Pulse Test 25 Note : TJ = 25 -1 0 0 2 4 6 8 10 10 0.2 0.4 0.6 ID, Drain Current [A] Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage 1.0 1.2 1.4 Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature 1000 12 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 600 Coss 400 Notes ; 1. VGS = 0 V 2. f = 1 MHz Crss 200 VGS, Gate-Source Voltage [V] Ciss VDS = 120V 10 800 Capacitance [pF] 0.8 VSD, Source-Drain voltage [V] VDS = 300V 8 VDS = 480V 6 4 2 Note : ID = 4.5A 0 0 -1 10 0 10 0 1 10 4 8 12 16 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] Figure 5. Capacitance Characteristics (c)2008 Fairchild Semiconductor Corporation Figure 6. Gate Charge Characteristics Rev. A1, October 2008 http://store.iiic.cc/ FQD5N60C / FQU5N60C Typical Characteristics (Continued) 1.2 3.0 RDS(ON) , (Normalized) Drain-Source On-Resistance BV DSS , (Normalized) Drain-Source Breakdown Voltage 2.5 1.1 1.0 Notes : 1. VGS = 0 V 2. ID = 250 A 0.9 0.8 -100 -50 0 50 100 2.0 1.5 1.0 Notes : 1. VGS = 10 V 2. ID = 1.4 A 0.5 150 0.0 -100 200 -50 0 50 100 150 200 o o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs Temperature Figure 8. On-Resistance Variation vs Temperature 3.0 Operation in This Area is Limited by R DS(on) 2.5 1 10 10 s 2.0 ID, Drain Current [A] ID, Drain Current [A] 100 s 1 ms 10 ms 100 ms DC 0 10 1.5 1.0 -1 10 Notes : o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse 0.5 -2 10 0 10 1 2 10 0.0 25 3 10 10 50 75 100 125 150 TC, Case Temperature [] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs Case Temperature D = 0 .5 10 N o te s : 1 . Z J C ( t) = 2 .5 6 /W M a x . 2 . D u ty F a c to r , D = t 1 / t 2 3 . T J M - T C = P D M * Z J C ( t) 0 0 .2 PDM 0 .1 0 .0 5 t1 t2 10 -1 0 .0 2 0 .0 1 Z JC ( t), T h e r m a l R e s p o n s e VDS, Drain-Source Voltage [V] s in g le p u ls e 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a re W a v e P u ls e D u r a tio n [s e c ] Figure 11. Transient Thermal Response Curve (c)2008 Fairchild Semiconductor Corporation Rev. A1, October 2008 http://store.iiic.cc/ FQD5N60C / FQU5N60C Gate Charge Test Circuit & Waveform VGS Same Type as DUT 50K Qg 200nF 12V 10V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Resistive Switching Test Circuit & Waveforms VDS RL VDS 90% VDD VGS RG VGS DUT 10V 10% td(on) tr td(off) t on tf t off Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS BVDSS IAS ID RG VDD DUT 10V ID (t) VDS (t) VDD tp tp (c)2008 Fairchild Semiconductor Corporation Time Rev. A1, October 2008 http://store.iiic.cc/ FQD5N60C / FQU5N60C Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) I SD ( DUT ) Same Type as DUT VDD * dv/dt controlled by RG * ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop (c)2008 Fairchild Semiconductor Corporation Rev. A1, October 2008 http://store.iiic.cc/ FQD5N60C / FQU5N60C Mechanical Dimensions D - PAK Dimensions in Millimeters (c)2008 Fairchild Semiconductor Corporation Rev. A1, October 2008 http://store.iiic.cc/ FQD5N60C / FQU5N60C Mechanical Dimensions I - PAK Dimensions in Millimeters (c)2008 Fairchild Semiconductor Corporation Rev. A1, October 2008 http://store.iiic.cc/ FRFET(R) Global Power ResourceSM Green FPSTM Green FPSTM e-SeriesTM GTOTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MillerDriveTM MotionMaxTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R) Build it NowTM CorePLUSTM CorePOWERTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) EfficentMaxTM EZSWITCHTM * TM (R) tm Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FlashWriter(R) * FPSTM F-PFSTM (R) tm PDP SPMTM Power-SPMTM PowerTrench(R) PowerXSTM Programmable Active DroopTM QFET(R) QSTM Quiet SeriesTM RapidConfigureTM TM Saving our world, 1mW /W /kW at a timeTM SmartMaxTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SupreMOSTM SyncFETTM (R) tm TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM SerDesTM FQD5N60C / FQU5N60C TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. UHC(R) Ultra FRFETTM UniFETTM VCXTM VisualMaxTM XSTM The Power Franchise(R) * EZSWITCHTM and FlashWriter(R) are trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. 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Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Farichild strongly encourages customers to purchase Farichild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handing and storage and provide access to Farichild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I37 FQD5N60C / FQU5N60C Rev. A1 www.fairchildsemi.com http://store.iiic.cc/