2MBI200NB-120-01 IGBT Module
1200V / 200A 2 in one-package
Features
· VCE(sat) classified for easy parallel connection
· High speed switching
· Voltage drive
· Low inductance module structure
Applications
· Inverter for Motor drive
· AC and DC Servo drive amplifier
· Uninterruptible power supply
· Industrial machines, such as Welding machines
Maximum ratings and characteristics
Absolute maximum ratings (at Tc=25°C unless otherwise specified)
Item Symbol
Collector-Emitter voltage VCES
Gate-Emitter voltage VGES
Collector Continuous IC
current 1ms IC pulse
-IC
1ms -IC pulse
Max. power dissipation PC
Operating temperature Tj
Storage temperature Tstg
Isolation voltage Vis
Screw torque Mounting *1
Terminals *2
Rating
1200
±20
200
400
200
400
1500
+150
-40 to +125
AC 2500 (1min.)
3.5
4.5
Unit
V
V
A
A
A
A
W
°C
°C
V
N·m
N·m
Item Symbol Characteristics Conditions Unit
Min. Typ. Max.
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation v oltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Tur n-on time
Turn-off time
Diode forward on voltage
Reverse recovery time
ICES
IGES
VGE(th)
VCE(sat)
Cies
Coes
Cres
ton
tr
toff
tf
VF
trr
– – 2.0
– – 30
4.5 – 7.5
– – 3.3
– 32000 –
– 11600 –
– 10320 –
– 0.65 1.2
– 0.25 0.6
– 0.85 1.5
– 0.35 0.5
– – 3.0
– – 0.35
VGE=0V, VCE=1200V
VCE=0V, VGE=±20V
VCE=20V, IC=200mA
VGE=15V, IC=200A
VGE=0V
VCE=10V
f=1MHz
VCC=600V
IC=200A
VGE=±15V
RG=4.7ohm
IF=200A, VGE=0V
IF=200A
mA
µA
V
V
pF
µs
V
µs
Electrical characteristics (at Tj=25°C unless otherwise specified)
Thermal resistance characteristics
Item Symbol Characteristics Conditions Unit
Min. Typ. Max.
Rth(j-c)
Thermal resistance Rth(j-c)
Rth(c-f)*
– – 0.085
– – 0.18
– 0.025 –
IGBT
Diode
the base to cooling fin
°C/W
°C/W
°C/W
* : This is the value which is defined mounting on the additional cooling fin with thermal compound
Equivalent Circuit Schematic
¤ Current control circuit
G1 E1 G2 E2
C1 E2
C2E1
¤
¤
*1 : Recommendable value : 2.5 to 3.5 N·m (M5) or (M6)
*2 : Recommendable value : 3.5 to 4.5 N·m (M6)
VCE(sat) classification
Rank Lenge Conditions
F 2.25 to 2.50V
A 2.40 to 2.65V Ic = 200A
B 2.55 to 2.80V VGE = 15V
C 2.70 to 2.95V Tj = 25°C
D 2.85 to 3.10V
E 3.00 to 3.30V
廃型機種
Discontinued product.
http://store.iiic.cc/
2MBI200NB-120-01 IGBT Module
Characteristics (Representative)
Collector current vs. Collector-Emitter voltage
Tj=25°C Collector current vs. Collector-Emitter voltage
Tj=125°C
Collector-Emitter vs. Gate-Emitter voltage
Tj=25°C Collector-Emitter vs. Gate-Emitter voltage
Tj=125°C
Switching time vs. Collector current
Vcc=600V, RG=4.7 ohm, VGE=±15V, Tj=25°C Switching time vs. Collector current
Vcc=600V, RG=4.7 ohm, VGE=±15V, Tj=125°C
Collector-Emitter voltage : VCE [V] Collector-Emitter voltage : VCE [V]
Collector current : Ic [A]
Collector current : Ic [A]
500
400
300
200
100
0
500
400
300
200
100
0
0 1 2 3 4 5 0 1 2 3 4 5
Collector-Emitter voltage : VCE [V]
Collector-Emitter voltage : VCE [V]
10
8
6
4
2
00 5 10 15 20 25 0 5 10 15 20 25
10
8
6
4
2
0
Gate-Emitter voltage : VGE [V] Gate-Emitter voltage : VGE [V]
Switching time : ton, tr, toff, tf [n sec.]
1000
100
10 0 100 200 300 400
Collector current : Ic [A]
0 100 200 300 400
Collector current : Ic [A]
Switching time : ton, tr, toff, tf [n sec.]
1000
100
10
廃型機種
Discontinued product.
http://store.iiic.cc/
2MBI200NB-120-01 IGBT Module
Switching time vs. RG
Vcc=600V, Ic=200A, VGE=±15V, Tj=25°C Dynamic input characteristics
Tj=25°C
Gate resistance : RG [ohm]
10 Gate charge : Qg [nC]
0 500 1000 1500 2000 2500
100
1000
1000
800
600
400
200
0
Switching time : ton, tr, toff, tf [n sec.]
Collector-Emitter voltage : VCE [V]
Forward current : IF [A]
500
400
300
200
100
00 1 2 3 4 5
Gate-Emitter voltage : VGE [V]
0
5
10
15
20
25
Forward voltage : VF [V]
Reverse recovery current : Irr [A]
Reverse recovery time : trr [n sec.]
Forward current vs. Forward voltage
VGE=0V
Reverse recovery characteristics
trr, Irr, vs. IF
Forward current : IF [A]
100
Thermal resistance : Rth (j-c) [°C/W]
Tr ansient thermal resistance
0.01
0.1
0.001 0.01 0.1 1
Pulse width : PW [sec.]
Reversed biased safe operating area
+VGE=15V, -VGE = 15V, Tj = 125°C, RG = 4.7ohm
0 100 200 300 400
<<>
2000
1600
1200
400
00 200 400 600 800 1000 1200
Collector-Emitter voltage : VCE [V]
Collector current : Ic [A]
0.001
800
廃型機種
Discontinued product.
http://store.iiic.cc/
2MBI200NB-120-01 IGBT Module
Outline Drawings, mm
Switching loss vs. Collector current
Vcc=600V, RG=4.7 ohm, VGE=±15V
Switching loss : Eon, Eoff, Err [mJ/cycle]
Collector current : Ic [A]
0
10
20
60
0 100 200 300 400 Collector-Emitter voltage : VCE [V]
0 5 10 15 20 25 30 35
1
10
100
Capacitance : Cies, Coes, Cres [nF]
Capacitance vs. Collector-Emitter voltage
Tj=25°C
50
40
30
廃型機種
Discontinued product.
http://store.iiic.cc/
