APT50DF170HJ
APT50DF170HJ – Rev 0 November, 2009
www.microsemi.com 1-3
Absolute maximum ratings
Symbol Parameter Max ratings Unit
VR Maximum DC reverse Voltage
VRRM Maximum Peak Repetitive Rev e rse Voltage 1700 V
IF(AV) Maximum Average Forward
Current Duty cycle = 50% TC = 80°C 50
IFRM Maximum repetitive forward current limited
by TJmax 8.3ms TJ = 45°C 100
A
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
VRRM = 1700V
IF = 50A @ Tc = 80°C
Application
• Switch mode power supplies rectifier
• Induction heating
• Welding equipment
• High speed rectifiers
Features
• Ultra fast recovery times
• Soft recovery characteristics
• High blocking voltage
• High current
• Low leakage current
• Very low stray inductance
• High level of integration
• ISOTOP® Package (SOT-227)
Benefits
• Outstanding performance at high frequency operation
• Low losses
• Low noise switchi n g
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• RoHS Compliant
ISOTOP®Fast Diode
Full Bridge Power Module
~
~
-
+
APT50DF170HJ
APT50DF170HJ – Rev 0 November, 2009
www.microsemi.com 2-3
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Tj = 25°C 1.8 2.2
VF Diode Forward Voltage IF = 50A Tj = 125°C 1.9 V
Tj = 25°C 250
IRM Maximum Reverse Leakage Current VR = 1700V Tj = 125°C 500 µA
Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Tj = 25°C 385
trr Reverse Recovery Time Tj = 125°C 420 ns
Tj = 25°C 14
Qrr Reverse Recovery Charge Tj = 125°C 23 µC
Tj = 25°C 6
Err Reverse Recovery Energy
IF = 50A
VR = 900V
di/dt = 800A/µs
Tj = 125°C 12 mJ
Thermal and package characteristics
Symbol Characteristic Min Typ Max Unit
RthJC Junction to Case Thermal resistance 0.7
RthJA Junction to Ambient 20 °C/W
VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V
TJ,TSTG Storage Temperature Range -55 150
TL Max Lead Temp for Soldering:0.063” from case for 10 sec 300 °C
Torque Mounting torque (M ounting = 8-32 or 4mm Machine and terminals = 4mm Machine) 1.5 N.m
Wt Package Weight 29.2 g
SOT-227 (ISOTOP®) Package Outline
31.5 (1.240)
31.7 (1.248)
Dimensions in Millimeters and (Inches)
7.8 (.307)
8.2 (.322)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
14.9 (.587)
15.1 (.594)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
0.75 (. 030)
0.85 (. 033) 12.6 (. 496)
12.8 (. 504)
25.2 (0.992)
25.4 (1.000)
1.95 (.077)
2.14 (.084)
r = 4.0 (.157)
(2 places) 4.0 (.157)
4.2 (.165)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
3.3 (.129)
3.6 (.143)
3.30 (. 130)
4.57 (. 180)
APT50DF170HJ
APT50DF170HJ – Rev 0 November, 2009
www.microsemi.com 3-3
Typical Performance Curve
Energy losses vs Coll ector Current
0
5
10
15
20
0 20406080100
I
F
(A)
Err (mJ)
V
CE
= 900V
V
GE
= - 15V
T
J
= 125°C
maximum E ffective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05 Single Pulse
0
0.2
0.4
0.6
0.8
0.00001 0.0001 0.001 0.01 0.1 1 10
rectangular Pulse Duration (Seconds)
Thermal Impedance (°C/W)
Diode
Forward Characteristic of diode
T
J
=25°C
T
J
=125°C
T
J
=125°C
0
20
40
60
80
100
00.511.522.53
V
F
(V)
I
F
(A)
ISOTOP® is a registered trademark of ST Microelectronics NV
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsem i's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,1 82,234 5,019,522 5,262,336 6,503, 786 5,256,583 4,748,103
5,283,202 5,231,4 74 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,1 57,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
