ZX5T955G
Datasheet Number: DS33426 Rev. 4 - 2
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ZX5T955G
A Product Line of
Diodes Incorporated
140V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223
Features
BVCEO > -140V
IC = -4A High Continuous Collector Current
ICM = -10A Peak Pulse Current
Low Saturation Voltage VCE(sat) < -120mV @ IC = -1A
RSAT = 92mΩ for a Low Equivalent On-Resistance
hFE Specified up to -10A for a High Gain Hold-Up
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Application
Motor Driving
Line Switching
High Side Switches
Subscriber Line Interface Cards (SLIC)
Mechanical Data
Case: SOT223
Case Material: Molded Plastic. “Green” molding Compound;
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
Weight: 0.112 grams (Approximate)
Ordering Information (Note 4)
Product
Marking
Reel size (inches)
Tape width (mm)
Quantity per reel
ZX5T955GTA
X5T955
7
12
1,000
ZX5T955GTC
X5T955
13
12
4,000
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SOT223
SOT223
Top View
Device Symbol
Top View
Pin-Out
Green
C
E
B
YWW
X5T
955
X5T 955 = Product Type Marking Code
YWW = Date Code Marking
Y or Y = Last Digit of Year (ex: 5= 2015)
WW or WW = Week Code (01~53)
ZX5T955G
Datasheet Number: DS33426 Rev. 4 - 2
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May 2015
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ZX5T955G
A Product Line of
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Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
VCBO
-180
V
Collector-Emitter Voltage
VCEO
-140
V
Emitter-Base Voltage
VEBO
-7
V
Continuous Collector Current
IC
-4
A
Peak Pulse Current
ICM
-10
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Power Dissipation
(Note 5)
PD
3.0
W
(Note 6)
2.0
(Note 7)
1.6
(Note 8)
1.2
Thermal Resistance, Junction to Ambient
(Note 5)
RJA
41.7
°C/W
(Note 6)
62.5
(Note 7)
78.1
(Note 8)
104
Thermal Resistance Junction to Lead
(Note 9)
RJL
10.5
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
ESD Ratings (Note 10)
Characteristic
Symbol
Value
Unit
JEDEC Class
Electrostatic Discharge - Human Body Model
ESD HBM
8,000
V
3B
Electrostatic Discharge - Machine Model
ESD MM
400
V
C
Notes: 5. For a device mounted with the collector lead on 52mm x 52mm 2oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under
still air conditions whilst operating in a steady-state.
6. Same as Note 5, except the device is mounted on 25mm x 25mm 2oz copper.
7. Same as Note 5, except the device is mounted on 25mm x 25mm 1oz copper.
8. Same as Note 5, except the device is mounted on minimum recommended pad layout.
9. Thermal resistance from junction to solder-point (at the end of the collector lead).
10. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
ZX5T955G
Datasheet Number: DS33426 Rev. 4 - 2
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A Product Line of
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Thermal Characteristics and Derating Information
100m 110 100
10m
100m
1
10
Single Pulse. Tamb=25°C
52mmX52mm
single sided 2oz Cu
VCE(sat)
Limit
100µs
1ms
10ms
100ms
1s
DC
Safe Operating Area
-IC Collector Current (A)
-VCE Collector-Emitter Voltage (V) 020 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
3.0
25mmX25mm
single sided 1oz Cu
52mmX52mm
single sided 2oz Cu
Derating Curve
Temperature (°C)
Max Power Dissipation (W)
100µ 1m 10m 100m 110 100 1k
0
10
20
30
40 52mmX52mm
single sided 2oz Cu
Transient Thermal Impedance
D=0.5
D=0.2
D=0.1
Single Pulse
D=0.05
Thermal Resistance (°C/W)
Pulse Width (s) 100µ 1m 10m 100m 110 100 1k
1
10
100
Single Pulse. Tamb=25°C
52mmX52mm
single sided 2oz Cu
Pulse Power Dissipation
Pulse Width (s)
Max Power Dissipation (W)
ZX5T955G
Datasheet Number: DS33426 Rev. 4 - 2
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ZX5T955G
A Product Line of
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Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ.
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
BVCBO
-180
-200
-
V
IC = -100µA
Collector-Emitter Breakdown Voltage (Note 11)
BVCER
-180
-200
-
V
IC = -1µA, RB 1kΩ
Collector-Emitter Breakdown Voltage (Note 11)
BVCEO
-140
-160
-
V
IC = -1mA
Emitter-Base Breakdown Voltage
BVEBO
-7
-8.3
-
V
IE = -100µA
Collector Cut-Off Current
ICBO
-
-
< -1
-
-20
-500
nA
nA
VCB = -150V
VCB = -150V, TA = +100°C
Collector Cut-Off Current
ICER
R 1kΩ
-
-
< -1
-
-20
-500
nA
nA
VCB = -150V
VCB = -150V, TA = +100°C
Emitter Cut-Off Current
IEBO
-
< -1
-10
nA
VEB = -6V
DC Current Transfer Static Ratio (Note 11)
hFE
100
225
-
-
IC = -10mA, VCE = -5V
100
200
300
IC = -1A, VCE = -5V
45
100
-
IC = -3A, VCE = -5V
-
5
-
IC = -10A, VCE = -5V
Collector-Emitter Saturation Voltage (Note 11)
VCE(sat)
-
-40
-60
mV
IC = -100mA, IB = -5mA
-
-55
-80
IC = -0.5A, IB = -50mA
-
-85
-120
IC = -1A, IB = -100mA
-
-275
-360
IC = -3A, IB = -300mA
Base-Emitter Saturation Voltage (Note 11)
VBE(sat)
-
-940
-1040
mV
IC = -3A, IB = -300mA
Base-Emitter Turn-On Voltage (Note 11)
VBE(on)
-
-830
-930
mV
IC = -3A, VCE = -5V
Transitional Frequency (Note 11)
fT
-
120
-
MHz
IC = -100mA, VCE = -10V,
f = 50MHz
Output Capacitance
Cobo
-
33
-
pF
VCB = -10V, f = 1MHz
Switching Time
tON
-
42
-
ns
VCC = -50V, IC = -1A,
IB1 = -IB2 = -100mA
tOFF
-
636
-
Note: 11. Measured under pulsed conditions. Pulse width 300μs. Duty cycle ≤ 2%.
ZX5T955G
Datasheet Number: DS33426 Rev. 4 - 2
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© Diodes Incorporated
ZX5T955G
A Product Line of
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Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
1m 10m 100m 1
10m
100m
1
100m 1
0.0
0.5
1.0
1.5
2.0
1m 10m 100m 110
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1m 10m 100m 1
0.4
0.6
0.8
1.0
1.2
1m 10m 100m 1
0.4
0.6
0.8
1.0
1.2
1.4
0
25
50
75
100
125
150
175
200
225
250
VCE(SAT) v IC
Tamb=25°C IC/IB=50
IC/IB=20
IC/IB=10
- VCE(SAT) (V)
- IC Collector Current (A)
VBE(SAT) v IC
IC/IB=10
100°C
25°C
-55°C
- VCE(SAT) (V)
- IC Collector Current (A)
hFE v IC
VCE=5V
-55°C
25°C
100°C
Normalised Gain
- IC Collector Current (A)
25°C
VCE(SAT) v IC
IC/IB=10
100°C
-55°C
- VBE(SAT) (V)
- IC Collector Current (A)
VBE(ON) v IC
VCE=5V
100°C
25°C -55°C
- VBE(ON) (V)
- IC Collector Current (A)
Typical Gain (hFE)
ZX5T955G
Datasheet Number: DS33426 Rev. 4 - 2
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ZX5T955G
A Product Line of
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Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
For high voltage applications, the appropriate industry sector guidelines should be considered with regards to creepage and clearance distances between device
terminals and PCB tracking.
SOT223
Dim
Min
Max
Typ
A
1.55
1.65
1.60
A1
0.010
0.15
0.05
b
0.60
0.80
0.70
b1
2.90
3.10
3.00
C
0.20
0.30
0.25
D
6.45
6.55
6.50
E
3.45
3.55
3.50
E1
6.90
7.10
7.00
e
-
-
4.60
e1
-
-
2.30
L
0.85
1.05
0.95
Q
0.84
0.94
0.89
All Dimensions in mm
Dimensions
Value (in mm)
C
2.30
C1
6.40
X
1.20
X1
3.30
Y
1.60
Y1
1.60
Y2
8.00
A1
A
D
b
e
e1
b1
C
E1
L
0°-10°
Q
E
0.25
Seating
Plane
Gauge
Plane
X1
Y1
Y
XC
C1 Y2
ZX5T955G
Datasheet Number: DS33426 Rev. 4 - 2
7 of 7
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May 2015
© Diodes Incorporated
ZX5T955G
A Product Line of
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IMPORTANT NOTICE
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
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website, harmless against all damages.
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This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
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use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
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representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2015, Diodes Incorporated
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