LTC5509
1
5509f
■
Multimode Mobile Phone Products
■
Optical Data Links
■
Wireless Data Modems
■
Wireless and Cable Infrastructure
■
RF Power Alarm
■
Envelope Detector
■
Temperature Compensated Internal Schottky Diode
RF Detector
■
Wide Input Frequency Range: 300MHz to 3GHz
■
Wide Input Power Range: –30dBm to 6dBm
■
Buffered Detector Output
■
Wide V
CC
Range of 2.7V to 6V
■
Low Operating Current: 600µA
■
Low Shutdown Current: <2µA
■
SC70
Package
300MHz to 3GHz
RF Power Detector
in SC70 Package
The LTC
®
5509 is an RF power detector for RF applications
operating in the 300MHz to 3GHz range. A temperature
compensated Schottky diode peak detector and buffer
amplifier are combined in a small SC70 package. The
supply voltage range is optimized for operation from a
single lithium-ion cell or 3xNiMH.
The RF input voltage is peak detected using an on-chip
Schottky diode. The detected voltage is buffered and
supplied to the V
OUT
pin without gain compression. Con-
sequently, the output voltage is linearly proportional to the
RF input voltage. A power saving shutdown mode reduces
supply current to less than 2µA.
The LTC5509 operates with input power levels from
–30dBm to 6dBm.
300MHz to 3GHz RF Power Detector
Output Voltage vs RF Input Power
, LTC and LT are registered trademarks of Linear Technology Corporation.
LTC5509
6
2
1
4
5
3
100pF 0.1µF
V
CC
V
OUT
V
CC
V
OUT
RF
IN
GND
SHDN
DISABLE ENABLE
33pF
5509 TA01
RF
INPUT
GND
RF INPUT POWER (dBm)
–30
0
V
OUT
OUTPUT VOLTAGE (mV)
500
1000
1500
2000
–20 –10 010
5509 TA02
2500
3000
–25 –15 –5 5
V
CC
= 3.6V
T
A
= 25°C
850MHz
1.85GHz
3GHz
DESCRIPTIO
U
FEATURES
APPLICATIO S
U
TYPICAL APPLICATIO
U
LTC5509
2
5509f
V
CC
, V
OUT
to GND .................................... –0.3V to 6.5V
RF
IN
Voltage .........................................(V
CC
± 1V) to 7V
SHDN Voltage to GND ................ –0.3V to (V
CC
+ 0.3V)
I
VOUT
...................................................................... 5mA
Operating Temperature Range (Note 2) .. – 40°C to 85°C
Maximum Junction Temperature ......................... 125°C
Storage Temperature Range ................ – 65°C to 150°C
Lead Temperature (Soldering, 10 sec)................. 300°C
ORDER PART
NUMBER
SC6 PART
MARKING
T
JMAX
= 125°C, θ
JA
= 256°C/W LADD
LTC5509ESC6
(Note 1)
ELECTRICAL CHARACTERISTICS
The ● denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at TA = 25°C. VCC = 3.6V, SHDN = VCC = HI, SHDN = 0V = LO, RF Input Signal is Off,
unless otherwise noted.
PARAMETER CONDITIONS MIN TYP MAX UNITS
V
CC
Operating Voltage ●2.7 6 V
I
VCC
Shutdown Current SHDN = LO ●2µA
I
VCC
Operating Current SHDN = HI, I
VOUT
= 0mA ●0.58 0.85 mA
V
OUT
V
OL
(No RF Input) R
LOAD
= 2k, SHDN = HI, Enabled 150 250 400 mV
SHDN = LOW, Disabled 1 mV
V
OUT
Output Current V
OUT
= 1.75V, V
CC
= 2.7V, ∆V
OUT
= 10mV ●12 mA
V
OUT
Enable Time SHDN = HI, C
LOAD
= 33pF, R
LOAD
= 2k ●820 µs
V
OUT
Bandwidth C
LOAD
= 33pF, R
LOAD
= 2k (Note 4) 1.5 MHz
V
OUT
Load Capacitance (Note 6) ●33 pF
V
OUT
Slew Rate V
RFIN
= 0.7V Step, C
LOAD
= 33pF, R
LOAD
= 2k (Note 3) 8 V/µs
V
OUT
Noise V
CC
= 3V, Noise BW = 1.5MHz, 50Ω RF Input Termination 2 mV
P-P
SHDN Voltage, Chip Disabled V
CC
= 2.7V to 6V ●0.35 V
SHDN Voltage, Chip Enabled V
CC
= 2.7V to 6V ●1.4 V
SHDN Input Current SHDN = 3.6V ●24 40 µA
RF
IN
Input Frequency Range 300 to 3000 MHz
RF
IN
Input Power Range RF Frequency = 300MHz to 3GHz (Note 5, 6) –30 to 6 dBm
RF
IN
AC Input Resistance F = 300MHz, Pin = –25dBm 150 Ω
RF
IN
Input Shunt Capacitance F = 300MHz, Pin = –25dBm 0.9 pF
Consult LTC Marketing for parts specified with wider operating temperature ranges.
Note 1: Absolute Maximum Ratings are those values beyond which the life
of a device may be impaired.
Note 2: Specifications over the –40°C to 85°C operating temperature
range are assured by design, characterization and correlation with
statistical process controls.
Note 3: The rise time at V
OUT
is measured between V
OUT
/2 + 0.5V to
V
OUT
/2 – 0.5V.
Note 4: Bandwidth is calculated using the 10% to 90% rise time equation:
BW = 0.35/rise time.
Note 5: RF performance is tested at 1800MHz
Note 6: Guaranteed by design.
6 RFIN
5 GND
4 VCC
SHDN 1
TOP VIEW
SC6 PACKAGE
6-LEAD PLASTIC SC70
GND 2
VOUT 3
ABSOLUTE AXI U RATI GS
WWWU
PACKAGE/ORDER I FOR ATIO
UU
W
LTC5509
3
5509f
Supply Current vs Supply Voltage Output Voltage vs Supply Voltage
(RF Input Signal Off) Typical Detector Characteristics,
850MHz
Typical Detector Characteristics,
1850MHz
SUPPLY VOLTAGE (V)
2.5
550
SUPPLY CURRENT (µA)
600
650
3 3.5 4 4.5
5509 G01
5 5.5 6
T
A
= 25°C
T
A
= 85°C
T
A
= –40°C
SUPPLY VOLTAGE (V)
2.5
285
V
OUT
OUTPUT VOLTAGE (mV)
295
290
305
300
3 3.5 4 4.5
5509 G02
5 5.5 6
T
A
= 25°C
T
A
= 85°C
T
A
= –40°C
RF INPUT POWER (dBm)
–30
0
VOUT OUTPUT VOLTAGE (mV)
500
1000
1500
2000
–20 –10 010
5509 G03
2500
3000
–25 –15 –5 5
VCC = 3.6V
TA = –40°C
TA = 25°C
TA = 85°C
RF INPUT POWER (dBm)
–30
0
V
OUT
OUTPUT VOLTAGE (mV)
500
1000
1500
2000
–20 –10 010
5509 G04
2500
3000
–25 –15 –5 5
V
CC
= 3.6V
T
A
= –40°C
T
A
= 25°C
T
A
= 85°C
VOUT Slope vs RF Input Power at
850MHz
VOUT Slope vs RF Input Power at
1850MHz
VOUT Slope vs RF Input Power at
3000MHz
RF INPUT POWER (dBm)
–30
0
V
OUT
OUTPUT VOLTAGE (mV)
500
1000
1500
2000
–20 –10 010
5509 G05
2500
3000
–25 –15 –5 5
V
CC
= 3.6V
T
A
= –40°C
T
A
= 25°C
T
A
= 85°C
RF INPUT POWER (dBm)
–30 –25
VOUT SLOPE (mV/dB)
10
100
1000
–20 –15 –10 –5 0 5
5509 G06
1
VCC = 3.6V
TA = –40°CTA = 85°C
TA = 25°C
RF INPUT POWER (dBm)
–30 –25
V
OUT
SLOPE (mV/dB)
10
100
1000
–20 –15 –10 –5 0 5
5509 G07
1
V
CC
= 3.6V
T
A
= –40°CT
A
= 85°C
T
A
= 25°C
RF INPUT POWER (dBm)
–30 –25
V
OUT
SLOPE (mV/dB)
10
100
1000
–20 –15 –10 –5 0 5
5509 G08
1
V
CC
= 3.6V
T
A
= –40°CT
A
= 85°C
T
A
= 25°C
TYPICAL PERFOR A CE CHARACTERISTICS
UW
Typical Detector Characteristics,
3000MHz
LTC5509
4
5509f
TYPICAL PERFOR A CE CHARACTERISTICS
UW
S11 Forward Reflection
Impedance
0.300000GHz TO 3.000000GHz
S11 Forward Reflection
Impedance
RFIN Input Impedance (Pin = 0dBm, VCC = 3.6V, TA = 25°C)
PNT FREQUENCY RESISTANCE REACTANCE
# (GHz) (Ω)(Ω)
1 0.300 185.434 –62.632
2 0.468 173.804 –65.491
3 0.637 161.644 –71.893
4 0.806 149.450 –76.830
5 0.975 137.402 –79.300
6 1.143 126.251 –81.429
7 1.312 114.165 –84.108
8 1.481 100.350 –83.547
9 1.650 89.015 –80.053
10 1.818 80.586 –74.762
11 1.987 73.674 –70.242
12 2.156 67.737 –66.323
13 2.325 62.354 –61.497
14 2.493 57.833 –57.213
15 2.662 53.701 –53.443
16 2.831 50.166 –48.992
17 3.000 47.094 –44.997 5509 TA03
5509 TA04
0.300000GHz TO 3.000000GHz
RFIN Input Impedance (Pin = –25dBm, VCC = 3.6V, TA = 25°C)
PNT FREQUENCY RESISTANCE REACTANCE
# (GHz) (Ω)(Ω)
1 0.300 146.073 –48.091
2 0.468 140.112 –44.500
3 0.637 133.522 –46.654
4 0.806 127.142 –50.559
5 0.975 120.560 –52.094
6 1.143 114.518 –53.472
7 1.312 107.427 –58.362
8 1.481 96.348 –61.184
9 1.650 86.158 –59.226
10 1.818 79.014 –55.746
11 1.987 73.054 –52.613
12 2.156 67.785 –49.515
13 2.325 63.701 –46.430
14 2.493 59.598 –43.378
15 2.662 55.559 –40.355
16 2.831 52.713 –37.150
17 3.000 49.898 –34.268
LTC5509
5
5509f
BLOCK DIAGRA
W
UU
U
PI FU CTIO S
SHDN (Pin 1): Shutdown Input. A logic low on the SHDN
pin places the part in shutdown mode. A logic high enables
the part. SHDN has an internal 150k pull down resistor to
ensure that the part is in shutdown when no input is
applied.
GND (Pin 2, 5): Ground.
V
OUT
(Pin 3): Detector Output.
V
CC
(Pin 4): Power Supply Voltage, 2.7V to 6V. V
CC
should
be bypassed appropriately with ceramic capacitors.
RF
IN
(Pin 6): RF Input Voltage. Referenced to V
CC
. A
coupling capacitor must be used to connect to the RF
signal source. The frequency range is 300MHz to 3GHz.
This pin has an internal 250Ω termination, an internal
Schottky diode detector and a peak detector capacitor.
–
+
–
+
5509 BD
28pF
V
OUT
SHDN
GND
GND
33pF TO 200pF
(DEPENDING ON
APPLICATION)
2
5
1
3
4
BUFFER
250Ω
RF DET
30k
30k
60µA60µA
150k
40k
130mV
BIAS
100Ω
100Ω
RF
SOURCE
RF
IN
V
CC
6
27k
27k
LTC5509
6
5509f
APPLICATIO S I FOR ATIO
WUUU
Operation
The LTC5509 RF detector integrates several functions to
provide RF power detection over frequencies ranging from
300MHz to 3GHz. These functions include an internally
compensated buffer amplifier, an RF Schottky diode peak
detector and level shift amplifier to convert the RF feedback
signal to DC and a delay circuit to avoid voltage transients
at V
OUT
when coming out of shutdown. The LTC5509 does
not incorporate gain compression. Consequently, it offers
a linear transfer relationship between RF input voltage and
DC output voltage.
Buffer Amplifier
The buffer amplifier is capable of driving a 2mA load. The
buffer amplifier typically has an output voltage range of
0.25V to 3V with V
CC
= 3.6V. At lower supply voltages the
maximum output swing is reduced.
RF Detector
The internal RF Schottky diode peak detector and level
shift amplifier converts the RF input signal to a low
frequency signal. The detector demonstrates excellent
efficiency and linearity over a wide range of input power.
The Schottky detector is biased at about 60µA and drives
a peak detector capacitor of 28pF.
Modes of Operation
MODE SHDN OPERATION
Shutdown Low Disabled
Enable High Power Detect
Applications
The LTC5509 can be used as a self-standing signal strength
measuring receiver for a wide range of input signals from
–30dBm to 6dBm for frequencies from 300MHz to 3GHz.
The LTC5509 can be used as a demodulator for AM and
ASK modulated signals with data rates up to 1.5MHz.
Depending on specific application needs, the RSSI output
can be split into two branches, providing AC-coupled data
(or audio) output and DC-coupled, RSSI output for signal
strength measurements and AGC.
The LTC5509 can be used for RF power detection and
control. Refer to Application Note 91, “Low Cost Coupling
Methods for RF Power Detectors Replace Directional
Couplers.”
Demo Board Schematic
SHDN
GND
V
OUT
RF
GND
V
CC
LTC5509
1
2
3
JP1
V
CC
V
CC
V
CC
R2
68Ω
(OPT)
R1
68Ω
(OPT)
C5
(OPT) C2
0.1µFC3
100pF
C1
33pF RF
IN
J1
E1
E5
E2
E4
E3 GND
V
OUT
GND
SHDN
R3
22k
ENABLE
DISABLE
5509 AI01
LTC5509
7
5509f
SC6 Package
6-Lead Plastic SC70
(Reference LTC DWG # 05-08-1638)
U
PACKAGE DESCRIPTIO
1.15 – 1.35
(NOTE 4)
1.80 – 2.40
0.15 – 0.30
6 PLCS (NOTE 3)
0.10 – 0.18
(NOTE 3)
SC6 SC70 0802
1.80 – 2.20
(NOTE 4)
0.65 BSC
PIN 1
0.80 – 1.00
1.00 MAX
0.00 – 0.10
REF
0.10 – 0.40
0.10 – 0.30
NOTE:
1. DIMENSIONS ARE IN MILLIMETERS
2. DRAWING NOT TO SCALE
3. DIMENSIONS ARE INCLUSIVE OF PLATING
4. DIMENSIONS ARE EXCLUSIVE OF MOLD FLASH AND METAL BURR
5. MOLD FLASH SHALL NOT EXCEED 0.254mm
6. DETAILS OF THE PIN 1 INDENTIFIER ARE OPTIONAL,
BUT MUST BE LOCATED WITHIN THE INDEX AREA
7. EIAJ PACKAGE REFERENCE IS EIAJ SC-70
3.26 MAX
0.47
MAX 0.65
REF
RECOMMENDED SOLDER PAD LAYOUT
PER IPC CALCULATOR
0.96 MIN
2.1 REF
1.16 REF
INDEX AREA
(NOTE 6)
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no represen-
tation that the interconnection of its circuits as described herein will not infringe on existing patent rights.
LTC5509
8
5509f
LT/TP 0203 2K • PRINTED IN USA
Linear Technology Corporation
1630 McCarthy Blvd., Milpitas, CA 95035-7417
(408) 432-1900
●
FAX: (408) 434-0507
●
www.linear.com
LINEAR TECHNOLOGY CORPORATION 2003
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