MSA-0636
Cascadable Silicon Bipolar MMIC Amplifiers
Data Sheet
Features
•Cascadable 50Ω Gain Block
•Low Operating Voltage:
3.5 V Typical Vd
•3 dB Bandwidth:
DC to 0.9 GHz
•High Gain:
19.0 dB Typical at 0.5 GHz
•Low Noise Figure:
2.8 dB Typical at 0.5 GHz
•Cost Effective Ceramic Microstrip Package
36 micro-X Package
Description
The MSA-0636 is a high performance silicon bipolar
Monolithic Microwave Integrated Circuit (MMIC)
housed in a cost effective, microstrip package. This
MMIC is designed for use as a general purpose 50Ω gain
block. Typical applications include narrow and broad
band IF and RF amplifiers in commercial and industrial
applications.
The MSA-series is fabricated using Avago’s 10 GHz fT,
25 GHz fMAX, silicon bipolar MMIC process which uses
nitride self-alignment, ion implantation, and gold
metallization to achieve excellent performance,
uniformity and reliability. The use of an external bias
resistor for temperature and current stability also allows
bias flexibility.
Typical Biasing Configuration
Cblock Cblock
Rbias
V
CC
>
5 V
Vd
= 3.5 V
RFC (Optional)
IN OUT
MSA
4
1
2
3
2
MSA-0636 Absolute Maximum Ratings
Parameter Absolute Maximum[1]
Device Current 50 mA
Power Dissipation[2,3] 200 mW
RF Input Power +13 dBm
Junction Temperature 150°C
Storage Temperature[4] –65 to 150°C
Thermal Resistance[2,5]:
θjc = 155°C/W
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. TCASE = 25°C.
3. Derate at 6.5 mW/°C for TC > 169°C.
4. Storage above +150°C may tarnish the leads of this package making it
difficult to solder into a circuit.
5. The small spot size of this technique results in a higher, though more
accurate determination of θjc than do alternate methods.
GPPower Gain (|S21|2) f = 0.1 GHz dB 19.0 20.5 22.0
∆GPGain Flatness f = 0.1 to 0.5 GHz dB ±0.7 ±1.0
f3 dB 3 dB Bandwidth GHz 0.9
Input VSWR f = 0.1 to 1.5 GHz 1.4:1
Output VSWR f = 0.1 to 1.5 GHz 1.3:1
NF 50 Ω Noise Figure f = 0.5 GHz dB 2.8 4.0
P1 dB Output Power at 1 dB Gain Compression f = 0.5 GHz dBm 2.0
IP3Third Order Intercept Point f = 0.5 GHz dBm 14.5
tDGroup Delay f = 0.5 GHz psec 200
VdDevice Voltage V 3.1 3.5 3.9
dV/dT Device Voltage Temperature Coefficient mV/°C –8.0
Note:
1. The recommended operating current range for this device is 12 to 30 mA. Typical performance as a function of current
is on the following page.
Electrical Specifications[1], TA = 25°C
Symbol Parameters and Test Conditions: Id = 16 mA, ZO = 50 ΩUnits Min. Typ. Max.
VSWR
Ordering Information
Part Numbers No. of Devices Comments
MSA-0636-BLKG 100 Bulk
MSA-0636-TR1G 1000 7" Reel
3
MSA-0636 Typical Scattering Parameters (ZO = 50 Ω, TA = 25°C, Id = 16 mA)
Freq.
GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang k
0.1 .03 –178 20.5 10.59 171 –23.4 .068 5 .04 –44 1.05
0.2 .02 –177 20.3 10.31 161 –22.9 .071 8 .05 –68 1.04
0.3 .02 –164 20.0 9.96 152 –22.4 .076 14 .06 –87 1.04
0.4 .02 –116 19.6 9.55 144 –22.0 .079 19 .07 –104 1.03
0.5 .02 –100 19.2 9.08 136 –21.8 .081 21 .09 –114 1.04
0.6 .04 –89 18.7 8.59 128 –21.3 .086 24 .09 –123 1.04
0.8 .07 –96 17.7 7.66 115 –20.2 .098 29 .10 –140 1.03
1.0 .10 –108 16.6 6.79 103 –19.4 .107 31 .11 –156 1.02
1.5 .17 –134 14.2 5.13 79 –17.2 .138 30 .12 172 1.03
2.0 .24 –160 12.1 4.01 60 –15.8 .163 26 .12 148 1.04
2.5 .31 –178 10.3 3.26 48 –15.1 .175 27 .12 140 1.08
3.0 .37 166 8.7 2.72 34 –14.4 .190 24 .11 135 1.10
3.5 .42 151 7.4 2.33 21 –13.9 .203 19 .10 144 1.11
4.0 .46 139 6.2 2.04 9 –13.3 .216 16 .08 167 1.11
4.5 .48 126 5.1 1.81 –3 –12.8 .229 12 .08 –173 1.11
5.0 .52 110 4.2 1.62 –15 –12.2 .245 8 .09 –173 1.09
S11 S21 S12 S22
G
p
(dB)
0.1 0.3 0.5 1.0 3.0 6.0
FREQUENCY (GHz)
Figure 1. Typical Power Gain vs.
Frequency, Id = 16 mA.
102345
V
d
(V)
Figure 2. Device Current vs. Voltage. Figure 3. Power Gain vs. Current.
0
3
6
9
12
15
18
21
0
5
10
15
20
25
Gain Flat to DC
I
d
(mA)
T
C
= +125°C
T
C
= +25°C
T
C
= –55°C
I
d
(mA)
0
5
10
15
20
25
G
p
(dB)
10 20 25 3015
0.1 GHz
0.5 GHz
1.0 GHz
2.0 GHz
0
1
2
3
4
5
0
1
2
3
4
5
17
18
19
20
21
–55 –25 +25 +85 +125
P
1 dB
(dBm)
NF (dB)
Gp (dB)
TEMPERATURE (°C)
Figure 4. Output Power at 1 dB Gain
Compression, NF and Power Gain vs.
Case Temperature, f = 0.5 GHz,
Id=16mA.
P
1 dB
NF
G
P
0.1 0.2 0.3 0.5 2.01.0 4.0
FREQUENCY (GHz)
Figure 5. Output Power at 1 dB Gain
Compression vs. Frequency.
-4
0
4
8
12
P
1 dB
(dBm)
I
d
= 20 mA
I
d
= 30 mA
I
d
= 12 mA
I
d
= 16 mA
2.5
2.0
3.0
3.5
4.0
NF (dB)
FREQUENCY (GHz)
Figure 6. Noise Figure vs. Frequency.
0.1 0.2 0.3 0.5 2.01.0 4.0
I
d
= 12 mA
I
d
= 16 mA, 30 mA
I
d
= 20 mA
Typical Performance, TA = 25°C
(unless otherwise noted)
36 micro-X Package Dimensions
13
4
2
SOURCE
SOURCE
DRAIN
GATE
2.15
(0.085)
2.11 (0.083) DIA.
0.508
(0.020)
2.54
(0.100)
4.57 ± 0.25
0.180 ± 0.010
0.15 ± 0.05
(0.006 ± 0.002)
Notes:
1. Dimensions are in millimeters (inches)
2. Tolerances: in .xxx = ± 0.005
mm .xx = ± 0.13
0.56
(0.022)
1.45 ± 0.25
(0.057 ± 0.010)
For product information and a complete list of distributors, please go to our web site:
www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Limited in the United States and other countries.
Data subject to change. Copyright © 2007 Avago Technologies, Limited. All rights reserved. Obsoletes 5989-2743EN
AV02-0304EN - April 12, 2007
