J176_D74Z - ON SEMICONDUCTOR

J175 / J176 / MMBFJ175 / MMBFJ176 / MMBFJ177 — P-Channel Switch

Publication Order Number:

J175/D

October-2017, Rev. 2

J175 / J176 / MMBFJ175 / MMBFJ176 / MMBFJ177

P-Channel Switch

Ordering Information

Figure 1. J175 / J176 Device Package Figure 2. MMBFJ175 / 176 / 177 Device Package

Part Number Marking Package Packing Method

J175-D26Z J175 TO-92 3L Tape and Reel

J176-D74Z J176 TO-92 3L Ammo

MMBFJ175 6W SOT-23 3L Tape and Reel

MMBFJ176 6X SOT-23 3L Tape and Reel

MMBFJ177 6Y SOT-23 3L Tape and Reel

1. Drain

123123

Straight Lead Bent Lead

TO-92

Bulk Packing Tape & Reel

Ammo Packing

2. Gate

3. Source

SOT-23

Mark: 6W / 6X / 6Y

Note: Source & drain are interchangeable.

Description

This device is designed for low-level analog switching

sample-and-hold circuits and chopper-stabilized

amplifiers. Sourced from process 88.

J175 / J176 / MMBFJ175 / MMBFJ176 / MMBFJ177 — P-Channel Switch

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Absolute Maximum Ratings(1),(2)

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-

ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-

tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The

absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.

Notes:

1. These ratings are based on a maximum junction temperature of 150°C.

2. These are steady-state limits. ON Semiconductor should be consulted on applications involving pulsed or low-

duty cycle operations.

Thermal Characteristics

Values are at TA = 25°C unless otherwise noted.

Note:

3. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.

Symbol Parameter Value Unit

VDG Drain-Gate Voltage -30 V

VGS Gate-Source Voltage 30 V

IGF Forward Gate Current 50 mA

TJ, TSTG Operating and Storage Junction Temperature Range -55 to + 150 °C

Symbol Parameter

Max.

Unit

J175 / J176 (3) MMBFJ175 /

MMBFJ176 /

MMBFJ177 (3)

Total Device Dissipation 350 225 mW

Derate Above 25°C2.81.8mW/°C

RθJC Thermal Resistance, Junction to Case 125 °C/W

RθJA Thermal Resistance, Junction to Ambient 357 556 °C/W

J175 / J176 / MMBFJ175 / MMBFJ176 / MMBFJ177 — P-Channel Switch

Electrical Characteristics

Values are at TA = 25°C unless otherwise noted.

Note:

4. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%.

Symbol Parameter Conditions Min. Max. Unit

Off Characteristics

V(BR)GSS Gate-Source Breakdown Voltage IG = 1.0 μA, VDS = 0 30 V

IGSS Gate Reverse Current VGS = 20 V, VDS = 0 1.0 nA

VGS(off) Gate-Source Cut-Off Voltage VDS = -15 V, ID = -10 nA

J175 /

MMBFJ175 3.0 6.0

VJ176 /

MMBFJ176 1.0 4.0

MMBFJ177 0.8 2.5

On Characteristics

IDSS Zero-Gate Voltage Drain Current(4) VDS = -15 V, IGS = 0

J175 /

MMBFJ175 -7.0 -60.0

mAJ176 /

MMBFJ176 -2.0 -25.0

MMBFJ177 -1.5 -20.0

rDS(on) Drain-Source On Resistance VDS ≤ 0.1 V, VGS = 0

J175 /

MMBFJ175 125

ΩJ176 /

MMBFJ176 250

MMBFJ177 300

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J175 / J176 / MMBFJ175 / MMBFJ176 / MMBFJ177 — P-Channel Switch

Typical Performance Characteristics

Figure 3. Common Drain-Source Figure 4. Parameter Interactions

Figure 5. Transfer Characteristics Figure 6. Transfer Characteristics

Figure 7. Normalized Drain Resistance vs.

Bias Voltage Figure 8. Output Conductance vs. Drain Current

-5-4-3-2-10

-20

-16

-12

-8

-4

V - DRAIN-SOURCE VOLTAGE (V)

I - DRAIN CURRENT (mA)

1.0 V

2.5 V

2.0 V

0.5 V

1.5 V

V = 0 V

T = 25°C

TYP V = 4.5 V

GS(off)

3.0 V 3.5 V

r - DRAIN "ON" RESISTANCE (ΩΩ)

12 510

100

500

1,000

V - GATE CUTOFF VOLTAGE (V)

g - TRANSCONDUCTANCE (mmhos)

GS (OFF)

I , g @ V = 15V,

V = 0 PULSED

r @ -100 mV, V = 0

V @ V = - 15V,

I = - 1.0 μA

GS(off)

DSS

01234

-32

-24

-16

-8

V - GATE-SOURCE VOLTAGE (V)

I - DRAIN CURRENT (mA)

V = - 4.5 V

GS(off)

25°C

V = - 15 V

V = 2.5 V

GS(off)

125°C

- 55°C

25°C

125°C

- 55°C

01234

V - GATE-SOURCE VOLTAGE (V)

I - DRAIN CURRENT (mA)

V = - 4.5 V

GS(off)

25°C

V = - 15 V

V = 2.5 V

GS(off)

125°C

- 55°C

25°C

- 55°C

125°C

0 0.2 0.4 0.6 0.8 1

100

V /V - NORMALIZED GATE-SOURCE VOLTAGE (V)

r - NORMALIZED RESISTANCE

r =

V @ 5.0V, 10 μA

GS(off)

________

GS(off)

1 -

GS(off)

( Ω ) Ω )

Ω ) Ω )

Ω )

0.01 0.1 1 10

100

1000

I - DRAIN CURRENT (mA)

g - OUTPUT CONDUCTANCE ( mhos)

V = - 4.5V

GS(off)

f = 1.0 kHz

V = - 2.5V

GS(off)

-20V

-10V

-20V

-5.0V

___

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J175 / J176 / MMBFJ175 / MMBFJ176 / MMBFJ177 — P-Channel Switch

Typical Performance Characteristics (Continued)

Figure 9. Transconductance vs. Drain Current Figure 10. Capacitance vs. Voltage

Figure 11. Noise Voltage vs. Frequency Figure 12. Channel Resistance vs. Temperature

Figure 13. Power Dissipation vs.

Ambient Temperature

0.1 1 10 100

0.1

0.5

I - DRAIN CURRENT (mA)

g - TRANSCONDUCTANCE (mmhos)

V = 2.5V

GS(off)

V = -15V

f = 1.0 kHz

V = 6.0V

GS(off)

- 55°C

25°C

125°C

25°C

048121620

100

V - GATE-SOURCE VOLTAGE (V)

C (C ) - CAPACITANCE (pF)

C (V = -15V)

f = 0.1 - 1.0 MHz

0.01 0.1 1 10 100

100

f - FREQUENCY (kHz)

e - NOISE VOLTAGE (nV / Hz)

V = - 15V

BW = 6.0 Hz @ f = 10 Hz, 100 Hz

= 0.2f @ f ≥ 1.0 kHz

I = 5.0 mA

I = - 0.2 mA

√

-50 0 50 100 150

100

500

1000

T - AMBIENT TEMPERATURE ( C)

r - DRAIN "ON" RESISTANCE

(Ω)

V = 2.5V

GS(off)

V = 4.5V

GS(off)

V = 8.0V

GS(off)

V = -100 mV

V = 0

0 25 50 75 100 125 150

100

150

200

250

300

350

TEMPERATURE ( C)

P - POWER DISSIPATION (mW)

TO-92

SOT-23

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J175 / J176 / MMBFJ175 / MMBFJ176 / MMBFJ177 — P-Channel Switch

Physical Dimensions

Figure 14. 3-Lead, TO-92, Molded, 0.2 In Line Spacing Lead Form

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J175 / J176 / MMBFJ175 / MMBFJ176 / MMBFJ177 — P-Channel Switch

Physical Dimensions (Continued)

Figure 15. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE

LAND PATTERN

RECOMMENDATION

NOTES: UNLESS OTHERWISE SPECIFIED

A) REFERENCE JEDEC REGISTRATION

TO-236, VARIATION AB, ISSUE H.

B) ALL DIMENSIONS ARE IN MILLIMETERS.

C) DIMENSIONS ARE INCLUSIVE OF BURRS,

MOLD FLASH AND TIE BAR EXTRUSIONS.

D) DIMENSIONING AND TOLERANCING PER

ASME Y14.5M - 1994.

E) DRAWING FILE NAME: MA03DREV10

SEE DETAIL A

SEATING

PLANE

SCALE: 2X

GAGE PLANE

(0.55)

(0.93)

1.20 MAX

0.10

0.00

0.10 C

2.40±0.30

2.92±0.20

1.30+0.20

-0.15

0.60

0.37

0.20 A B

1.90

0.95

(0.29)

0.95

1.40

2.20

1.00

1.90

0.25

0.23

0.08

0.20 MIN

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