FDMA1029PZ Dual P-Channel PowerTrench MOSFET General Description Features This device is designed specifically as a single package x -3.1 A, -20V. RDS(ON) = 95 m: @ VGS = -4.5V solution for the battery charge switch in cellular handset RDS(ON) = 141 m: @ VGS = -2.5V x Low profile - 0.8 mm maximum - in the new package and other ultra-portable applications. It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. MicroFET 2x2 mm When x HBM ESD protection level > 2.5kV (Note 3) connected in the typical common source configuration, bi-directional current flow is possible. x RoHS Compliant The MicroFET 2x2 package offers exceptional thermal Free from halogenated compounds and antimony oxides performance for its physical size and is well suited to linear mode applications. PIN 1 S1 G1 D1 D2 D2 S1 1 6 D1 G1 2 5 G2 D2 3 4 S2 D1 G2 S2 MicroFET 2x2 Absolute Maximum Ratings Symbol TA=25oC unless otherwise noted Parameter Ratings Units VDS Drain-Source Voltage -20 V VGS Gate-Source Voltage r12 V A Drain Current ID - Continuous (Note 1a) - Pulsed -3.1 -6 PD Power Dissipation for Single Operation TJ, TSTG Operating and Storage Junction Temperature Range (Note 1a) (Note 1b) W 1.4 0.7 qC -55 to +150 Thermal Characteristics RTJA Thermal Resistance, Junction-to-Ambient (Note 1a) 86 (Single Operation) RTJA Thermal Resistance, Junction-to-Ambient (Note 1b) 173 (Single Operation) RTJA Thermal Resistance, Junction-to-Ambient (Note 1c) 69 (Dual Operation) RTJA Thermal Resistance, Junction-to-Ambient (Note 1d) 151 (Dual Operation) qC/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 029 FDMA1029PZ 7'' 8mm 3000 units 2009 Fairchild Semiconductor Corporation FDMA1029PZ Rev.B4(W) FDMA1029PZ Dual P-Channel PowerTrench MOSFET July 2014 Symbol Parameter TA = 25C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS 'BVDSS 'TJ IDSS IGSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient ID = -250 PA VGS = 0 V, ID = -250 PA, Referenced to 25qC -20 V mV/qC -12 Zero Gate Voltage Drain Current VDS = -16 V, VGS = 0 V -1 PA Gate-Body Leakage VGS = 12 V, VDS = 0 V 10 PA On Characteristics (Note 2) VGS(th) 'VGS(th) 'TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance gFS Forward Transconductance ID = -250 PA VDS = VGS, ID = -250 PA, Referenced to 25qC -0.6 -1.0 -1.5 V mV/qC 4 VGS = -4.5 V, ID = -3.1 A VGS = -2.5 V, ID = -2.5 A VGS= -4.5 V, ID = -3.1 A, TJ=125qC 60 88 87 VDS = -10 V, ID = -3.1 A -11 S VDS = -10 V, f = 1.0 MHz V GS = 0 V, 540 pF 120 pF 100 pF 95 141 140 m: Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics (Note 2) VDD = -10 V, ID = -1 A, VGS = -4.5 V, RGEN = 6 : td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time 37 59 ns tf Turn-Off Fall Time 36 58 ns Qg Total Gate Charge 7.0 10 nC Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS = -10 V, VGS = -4.5 V ID = -3.1 A, 13 24 ns 11 20 ns 1.1 nC 2.4 nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Source-Drain Diode Forward Current VSD trr Source-Drain Diode Forward Voltage Diode Reverse Recovery Time Qrr Diode Reverse Recovery Charge VGS = 0 V, IS = -1.1 A IF = -3.1 A, dIF/dt = 100 A/s (Note 2) -0.8 -1.1 A -1.2 V 25 ns 9 nC FDMA1029PZ Rev.B4(W) FDMA1029PZ Dual P-Channel PowerTrench MOSFET Electrical Characteristics Notes: 1. RTJA is determined with the device mounted on a 1 in2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. RTJC is guaranteed by design while RTJA is determined by the user's board design. (a) RTJA = 86 C/W when mounted on a 1 in2 pad of 2 oz copper, 1.5 " x 1.5 " x 0.062 " thick PCB. For single operation. (b) RTJA = 173 C/W when mounted on a minimum pad of 2 oz copper. For single operation. (c) RTJA = 69 oC/W when mounted on a 1 in2 pad of 2 oz copper, 1.5 " x 1.5 " x 0.062 " thick PCB. For dual operation. (d) RTJA = 151 oC/W when mounted on a minimum pad of 2 oz copper. For dual operation. a)86 oC/W when mounted on a 1 in2 pad of 2 oz copper. b)173 oC/W when mounted on a minimum pad of 2 oz copper. c)69 oC/W when mounted on a 1 in2 pad of 2 oz copper. d)151 oC/W when mounted on a minimum pad of 2 oz copper. 2. Pulse Test : Pulse Width < 300 us, Duty Cycle < 2.0% 3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. FDMA1029PZ Rev.B4(W) 6 2.6 VGS = 4 5V 3.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE -ID, DRAIN CURRENT (A) 5 2.5V 2.0V 3.0V 4 3 2 1 1.5V 0 1.8 -2.5V 1.4 -3.0V -3.5V 1 0.4 0.8 1.2 1.6 -VDS, DRAIN-SOURCE VOLTAGE (V) 2 0 Figure 1. On-Region Characteristics. -4.5V 1 2 3 4 -ID, DRAIN CURRENT (A) 5 6 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.2 1.5 1.4 RDS(ON), ON-RESISTANCE (OHM) ID = -3.1A VGS = -4.5V 1.3 1.2 1.1 1 0.9 0.8 0.7 ID = -1.55A 0.16 0.12 o TA = 125 C 0.08 o TA = 25 C 0.04 -50 -25 0 25 50 75 100 o TJ, JUNCTION TEMPERATURE ( C) 125 150 0 Figure 3. On-Resistance Variation with Temperature. 2 4 6 8 -VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 6 100 VGS = 0V -IS, REVERSE DRAIN CURRENT (A) VDS = -5V 5 -ID, DRAIN CURRENT (A) -4.0V 0.6 0 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = -2.0V 2.2 4 3 2 o TA = 125 C o -55 C 1 25oC 0 10 1 TA = 125oC 0.1 25oC 0.01 o -55 C 0.001 0.0001 0 0.5 1 1.5 2 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 2.5 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -VSD, BODY DIODE FORWARD VOLTAGE (V) 1.6 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDMA1029PZ Rev.B4(W) FDMA1029PZ Dual P-Channel PowerTrench MOSFET Typical Characteristics 1000 f = 1MHz VGS = 0 V ID = -3.1A 800 8 VDS = -5V CAPACITANCE (pF) -VGS, GATE-SOURCE VOLTAGE (V) 10 -15V 6 -10V 4 600 Ciss 400 Coss 2 200 0 0 Crss 0 2 4 6 8 10 Qg, GATE CHARGE (nC) 12 14 0 Figure 7. Gate Charge Characteristics. 4 8 12 16 -VDS, DRAIN TO SOURCE VOLTAGE (V) 20 Figure 8. Capacitance Characteristics. 100 RDS(ON) LIMIT P(pk), PEAK TRANSIENT POWER (W) 10 100us 1ms 10ms 100ms 1 10s 1s DC VGS = -4.5V SINGLE PULSE o RTJA = 173 C/W 0.1 TA = 25oC 0.01 0.1 1 10 -VDS, DRAIN-SOURCE VOLTAGE (V) 100 Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE -ID, DRAIN CURRENT (A) 50 SINGLE PULSE RTJA = 173C/W TA = 25C 40 30 20 10 0 0.0001 0.001 0.01 0.1 1 10 100 1000 Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RTJA(t) = r(t) * RTJA RTJA =173 C/W 0.2 0.1 P(pk) 0.1 0.05 t1 0.02 0.01 t2 TJ - TA = P * RTJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.01 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDMA1029PZ Rev.B4(W) FDMA1029PZ Dual P-Channel PowerTrench MOSFET Typical Characteristics FDMA1029PZ Dual P-Channel PowerTrench MOSFET Dimensional Outline and Pad Layout Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild's worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor's online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_MLDEB-X06 FDMA1029PZ Rev.B4(W) tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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