APT35GN120B(G) 1200V TYPICAL PERFORMANCE CURVES APT35GN120B APT35GN120BG* (R) *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBT's have a very short, low amplitude tail current and low Eoff. The Trench Gate design results in superior VCE(on) performance. Easy paralleling results from very tight parameter distribution and slightly positive VCE(on) temperature coefficient. Built-in gate resistance ensures ultra-reliable operation. Low gate charge simplifies gate drive design and minimizes losses. TO -2 47 G C E * 1200V NPT Field Stop * * * * Trench Gate: Low VCE(on) Easy Paralleling 10s Short Circuit Capability Intergrated Gate Resistor: Low EMI, High Reliability C G E Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS MAXIMUM RATINGS Symbol All Ratings: TC = 25C unless otherwise specified. Parameter APT35GN120B(G) VCES Collector-Emitter Voltage 1200 VGE Gate-Emitter Voltage 30 I C1 Continuous Collector Current @ TC = 25C 94 I C2 Continuous Collector Current @ TC = 110C 46 I CM SSOA PD TJ,TSTG TL Pulsed Collector Current 1 UNIT Volts Amps 105 @ TC = 150C Switching Safe Operating Area @ TJ = 150C 105A @ 1200V Total Power Dissipation 379 Operating and Storage Junction Temperature Range Watts -55 to 150 Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. C 300 STATIC ELECTRICAL CHARACTERISTICS Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 250A) VGE(TH) Gate Threshold Voltage VCE(ON) I CES Collector-Emitter On Voltage (VGE = 15V, I C = 35A, Tj = 25C) RGINT Intergrated Gate Resistor 5.8 6.5 1.4 1.7 2.1 2 Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125C) Gate-Emitter Leakage Current (VGE = 20V) 5 Units Volts 1.9 Collector-Emitter On Voltage (VGE = 15V, I C = 35A, Tj = 125C) I GES MAX 1200 (VCE = VGE, I C = 1mA, Tj = 25C) Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25C) TYP 100 2 600 6 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com A TBD nA 10-2005 V(BR)CES MIN Rev C Characteristic / Test Conditions 050-7601 Symbol APT35GN120B(G) DYNAMIC CHARACTERISTICS Symbol Test Conditions Characteristic Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VGEP Gate-to-Emitter Plateau Voltage 3 2500 VGE = 0V, VCE = 25V 150 f = 1 MHz 120 Gate Charge 9.5 VGE = 15V 220 Total Gate Charge Qge Gate-Emitter Charge Qgc Gate-Collector ("Miller ") Charge I C = 35A SSOA Switching Safe Operating Area TJ = 150C, R G = 2.2 7, VGE = VCE = 600V 15V, L = 100H,VCE = 1200V Short Circuit Safe Operating Area VCC = 960V, VGE = 15V, TJ = 125C, R G = 2.2 7 td(on) tr td(off) tf Eon1 Eon2 Turn-on Delay Time Turn-off Switching Energy td(on) Turn-on Delay Time tr td(off) tf TBD TJ = +25C Inductive Switching (125C) 24 VCC = 800V 22 VGE = 15V 365 RG = 2.2 7 100 TBD I C = 35A Current Fall Time 44 Turn-on Switching Energy Turn-on Switching Energy (Diode) J 2395 2315 Turn-off Delay Time Turn-off Switching Energy 55 RG = 2.2 7 Current Rise Time Eon2 ns 300 6 Eon1 Eoff s I C = 35A Turn-on Switching Energy (Diode) Eoff nC 10 22 5 V A VGE = 15V 4 pF 105 VCC = 800V Current Fall Time UNIT 130 24 Turn-off Delay Time MAX 15 Inductive Switching (25C) Current Rise Time Turn-on Switching Energy TYP Capacitance Qg SCSOA MIN 55 TJ = +125C ns 3745 66 J 3435 THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX RJC Junction to Case (IGBT) .33 RJC Junction to Case (DIODE) N/A WT Package Weight 5.9 UNIT C/W gm 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clam ped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. (See Figure 24.) 050-7601 Rev C 10-2005 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 RG is external gate resistance, not including RGint nor gate driver impedance. (MIC4452) APT Reserves the right to change, without notice, the specifications and information contained herein. TYPICAL PERFORMANCE CURVES APT35GN120B(G) 120 120 15V 60 10V 40 9V 20 8V 7V 0 2 4 6 8 10 12 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) 0 80 TJ = 125C 60 TJ = 25C TJ = -55C 40 20 0 0 10V 40 9V 20 8V 7V 0 2 4 6 8 10 12 14 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) FIGURE 2, Output Characteristics (TJ = 125C) 16 VGE, GATE-TO-EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A) 250s PULSE TEST<0.5 % DUTY CYCLE 11V 60 0 FIGURE 1, Output Characteristics(TJ = 25C) 100 12V 80 J VCE = 240V 12 VCE = 600V 10 VCE = 960V 8 6 4 2 0 2 4 6 8 10 12 14 VGE, GATE-TO-EMITTER VOLTAGE (V) I = 35A C T = 25C 14 0 50 IC = 70A 3 2.5 IC = 35A 2 1.5 IC = 17.5A 1.0 0.5 0 8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage 0.95 0.90 -50 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, Breakdown Voltage vs. Junction Temperature IC, DC COLLECTOR CURRENT(A) 1.00 3 IC = 70A 2.5 2 IC = 35A 1.5 IC = 17.5A 1 0.5 VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE 0 -50 -25 0 25 50 75 100 125 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature 140 1.10 1.05 250 FIGURE 4, Gate Charge VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE 3.5 BVCES, COLLECTOR-TO-EMITTER BREAKDOWN VOLTAGE (NORMALIZED) VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics 4 100 150 200 GATE CHARGE (nC) 120 100 80 Lead Temperature Limited 60 40 20 0 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 8, DC Collector Current vs Case Temperature 10-2005 11V Rev C 80 100 050-7601 IC, COLLECTOR CURRENT (A) 12V IC, COLLECTOR CURRENT (A) 15V 100 td (OFF), TURN-OFF DELAY TIME (ns) td(ON), TURN-ON DELAY TIME (ns) APT35GN120B(G) 450 30 25 VGE = 15V 20 15 10 VCE = 800V 5 T = 25C, T =125C J J RG = 2.2 L = 100 H 0 300 VGE =15V,TJ=125C 250 VGE =15V,TJ=25C 200 150 100 VCE = 800V RG = 2.2 L = 100 H 50 0 80 70 60 50 40 30 20 10 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 80 70 60 50 40 30 20 10 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 80 350 150 RG = 2.2, L = 100H, VCE = 800V 70 RG = 2.2, L = 100H, VCE = 800V 125 50 40 30 TJ = 25 or 125C,VGE = 15V 20 tf, FALL TIME (ns) tr, RISE TIME (ns) 60 80 70 60 50 40 30 20 10 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 80 70 60 50 40 30 20 10 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 8000 V = 800V CE V = +15V GE R = 2.2 EOFF, TURN OFF ENERGY LOSS (J) EON2, TURN ON ENERGY LOSS (J) 12000 G 10000 TJ = 125C,VGE =15V 8000 6000 4000 2000 TJ = 25C,VGE =15V J 15000 Eoff,70A 10000 Eon2,35A Eon2,17.5A Eoff,35A Eoff,17.5A 50 40 30 20 10 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance SWITCHING ENERGY LOSSES (J) SWITCHING ENERGY LOSSES (J) 10-2005 Eon2,70A 20000 0 G TJ = 125C, VGE = 15V 6000 5000 4000 3000 2000 TJ = 25C, VGE = 15V 1000 12000 = 800V V CE = +15V V GE T = 125C 5000 7000 80 70 60 50 40 30 20 10 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current 80 70 60 50 40 30 20 10 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 25000 = 800V V CE = +15V V GE R = 2.2 0 0 Rev C TJ = 25C, VGE = 15V 50 0 0 050-7601 75 25 10 0 TJ = 125C, VGE = 15V 100 = 800V V CE = +15V V GE R = 2.2 10000 G Eon2,70A 8000 Eoff,70A 6000 Eon2,35A 4000 Eoff,17.5A 2000 0 Eoff,35A Eon2,17.5A 125 100 75 50 25 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature 0 TYPICAL PERFORMANCE CURVES 4,000 IC, COLLECTOR CURRENT (A) 1,000 P C, CAPACITANCE ( F) Cies 500 C0es 100 Cres 50 APT35GN120B(G) 120 100 80 60 40 20 10 0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage 0 0 200 400 600 800 1000 1200 1400 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18,Minimim Switching Safe Operating Area 0.30 0.9 0.25 0.7 0.20 0.5 0.15 Note: PDM 0.3 0.10 t1 t2 0.1 t Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC 0.05 10-5 10-4 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration RC MODEL 1.0 0.163 0.00661F 0.168 0.181F Power (watts) Case temperature. (C) FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL FMAX, OPERATING FREQUENCY (kHz) 140 Junction temp. (C) F = min (fmax, fmax2) 0.05 fmax1 = td(on) + tr + td(off) + tf 10 1 T = 125C J T = 75C C D = 50 % V = 800V CE R = 2.2 max fmax2 = Pdiss - Pcond Eon2 + Eoff Pdiss = TJ - TC RJC G 10 20 30 40 50 60 70 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current 10-2005 0 SINGLE PULSE Rev C 0.05 050-7601 ZJC, THERMAL IMPEDANCE (C/W) 0.35 APT35GN120B(G) APT40DQ120 Gate Voltage 10% TJ = 125C td(on) V CE IC V CC Collector Current 90% tr A 5% D.U.T. 5% 10% CollectorVoltage Switching Energy Figure 21, Inductive Switching Test Circuit Figure 22, Turn-on Switching Waveforms and Definitions VTEST 90% *DRIVER SAME TYPE AS D.U.T. TJ = 125C Gate Voltage A td(off) CollectorVoltage V CE 90% 100uH V CLAMP tf 10% Switching Energy IC A 0 DRIVER* Collector Current Figure 24, EON1 Test Circuit Figure 23, Turn-off Switching Waveforms and Definitions TO-247 Package Outline e1 SAC: Tin, Silver, Copper 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 15.49 (.610) 16.26 (.640) 6.15 (.242) BSC Collector 10-2005 Rev C 5.38 (.212) 6.20 (.244) 20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150) 4.50 (.177) Max. 050-7601 B 0.40 (.016) 0.79 (.031) 19.81 (.780) 20.32 (.800) 2.21 (.087) 2.59 (.102) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) Gate Collector Emitter 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved. D.U.T.