© Semiconductor Components Industries, LLC, 2017
October, 2017 − Rev. 2
1Publication Order Number:
NSPM0061/D
NSPM0061
ESD Protection Diode
Features
•Protection for the following IEC Standards:
IEC61000−4−2 Level 4: ±30 kV Contact Discharge
IEC61000−4−5 (Lightning) 70 A (8/20 ms)
•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
IEC 61000−4−2 (ESD) Contact
Air
±30
±30
kV
Operating Junction and Storage
Temperature Range
TJ, Tstg −65 to +150 °C
Maximum Peak Pulse Current
8/20 ms @ TA = 25°C
IPP 70 A
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
Device Package Shipping†
ORDERING INFORMATION
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†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
NSPM0061MUT5G UDFN2
(Pb−Free)
8000 / Tape &
Reel
MARKING
DIAGRAM
1
Cathode
2
Anode
UDFN2
CASE 517CZ
F M
F = Specific Device Code
M = Date Code
NSPM0061
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2
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Symbol Parameter
IPP Maximum Reverse Peak Pulse Current
VCClamping Voltage @ IPP
VRWM Working Peak Reverse Voltage
IRMaximum Reverse Leakage Current @ VRWM
VBR Breakdown Voltage @ IT
ITTest Current
*See Application Note AND8308/D for detailed explanations of
datasheet parameters.
Uni−Directional
IPP
IF
V
I
IR
IT
VRWM
VCVBR
VF
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter Symbol Conditions Min Typ Max Unit
Reverse Working Voltage VRWM 6.3 V
Breakdown Voltage (Note 1) VBR IT = 1 mA 6.5 7.3 9.0 V
Reverse Leakage Current IRVRWM = 6.3 V 1mA
Clamping Voltage (Note 2) VCIPP = 1 A, tp = 8 x 20 ms7.5 V
Clamping Voltage (Note 2) VCIPP = 35 A, tp = 8 x 20 ms9.5 V
Clamping Voltage (Note 2) VCIPP = 70 A, tp = 8 x 20 ms11.5 V
Junction Capacitance CJVR = 0 V, f = 1 MHz 12 pF
Dynamic Resistance RDYN TLP Pulse 0.04 W
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Breakdown voltage is tested from pin 1 to 2 and pin 2 to 1.
2. Non−repetitive current pulse at TA = 25°C, per IEC61000−4−5 waveform.
NSPM0061
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4
Transmission Line Pulse (TLP) Measurement
Transmission Line Pulse (TLP) provides current versus
voltage (I−V) curves in which each data point is obtained
from a 100 ns long rectangular pulse from a charged
transmission line. A simplified schematic of a typical TLP
system is shown in Figure 4. TLP I−V curves of ESD
protection devices accurately demonstrate the product’s
ESD capability because the 10s of amps current levels and
under 100 ns time scale match those of an ESD event. This
is illustrated in Figure 5 where an 8 kV IEC 61000−4−2
current waveform is compared with TLP current pulses at
8 A and 16 A. A TLP I−V curve shows the voltage at which
the device turns on as well as how well the device clamps
voltage over a range of current levels. For more information
on TLP measurements and how to interpret them please
refer to AND9007/D.
Figure 4. Simplified Schematic of a Typical TLP
System
DUT
LS
÷
Oscilloscope
Attenuator
10 MW
VC
VM
IM
50 W Coax
Cable
50 W Coax
Cable
Figure 5. Comparison Between 8 kV IEC 61000−4−2 and 8 A and 16 A TLP Waveforms
NSPM0061
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5
IEC 61000−4−2 Spec.
Level
Test Volt-
age (kV)
First Peak
Current
(A)
Current at
30 ns (A)
Current at
60 ns (A)
1 2 7.5 4 2
2 4 15 8 4
3 6 22.5 12 6
4 8 30 16 8
Ipeak
90%
10%
IEC61000−4−2 Waveform
100%
I @ 30 ns
I @ 60 ns
tP = 0.7 ns to 1 ns
Figure 6. IEC61000−4−2 Spec
Figure 7. Diagram of ESD Test Setup
50 W
Cable
Device
Under
Test Oscilloscope
ESD Gun
50 W
ESD Voltage Clamping
For sensitive circuit elements it is important to limit the
voltage that an IC will be exposed to during an ESD event
to as low a voltage as possible. The ESD clamping voltage
is the voltage drop across the ESD protection diode during
an ESD event per the IEC61000−4−2 waveform. Since the
IEC61000−4−2 was written as a pass/fail spec for larger
systems such as cell phones or laptop computers it is not
clearly defined in the spec how to specify a clamping voltage
at the device level. ON Semiconductor has developed a way
to examine the entire voltage waveform across the ESD
protection diode over the time domain of an ESD pulse in the
form of an oscilloscope screenshot, which can be found on
the datasheets for all ESD protection diodes. For more
information on how ON Semiconductor creates these
screenshots and how to interpret them please refer to
AND8307/D.
Figure 8. 8 x 20 ms Pulse Waveform
100
90
80
70
60
50
40
30
20
10
0020406080
t, TIME (ms)
% OF PEAK PULSE CURRENT
tP
tr
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
PEAK VALUE IRSM @ 8 ms
HALF VALUE IRSM/2 @ 20 ms
UDFN2 1.6x1.0, 1.1P
CASE 517CZ
ISSUE D
DATE 02 JUL 2020
SCALE 4:1
XX = Specific Device Code
M = Date Code
GENERIC
MARKING DIAGRAM*
*This information is generic. Please refer
to device data sheet for actual part
marking. Pb−Free indicator, “G”, may
or not be present. Some products may
not follow the Generic Marking.
XXM
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
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UDFN2 1.6x1.0, 1.1P
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